MBR1635PT [LGE]
Dual Schottky Rectifiers; 双肖特基整流器
| 型号： | MBR1635PT |
| 厂家： | 
LGE |
| 描述： | Dual Schottky Rectifiers |
| 文件： | 总2页 (文件大小：1998K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MBR1635PT-MBR1660PT
Dual Schottky Rectifiers
VOLTAGE RANGE: 35 - 60 V
Features
CURRENT: 16 A
High surge capacity.
TO-3P
For use in low voltage, high frequency inverters, free
11 1wheeling, and polarity protection applications.
15.8± 0.2
8.0± 0.2
5.0± 0.15
2.0± 0.15
Metal silicon junction, majority carrier conduction.
High current capacity, low forward voltage drop.
Guard ring for over voltage protection.
φ3.6± 0.15
Mechanical Data
PIN
1
2
3
2.4± 0.2
Case:JEDEC TO-3P,molded plastic body
2.2± 0.15
1.2± 0.15
3.0± 0.1
Terminals:Leads, solderable per MIL-STD-750,
Method 2026
Polarity: As marked
1
1
0.6± 0.1
Weight: 0.223 ounce, 6.3 grams
5.4± 0.15
Position: Any
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified.
MBR
1635PT
MBR
1645PT
MBR
1650PT
MBR
1660PT
UNITS
Maximum recurrent peak reverse voltage
Maximum RMS Voltage
VRRM
VRMS
VDC
V
V
V
35
25
35
45
50
35
50
60
32
42
Maximum DC blocking voltage
45
60
Maximum average forw ard total device11111111
16.0
IF(AV)
IFSM
A
A
m rectified current @TC = 125°C
Peak forw ard surge current 8.3ms single half
150.0
b
sine-w ave superimposed on rated load
Maximum forw ard
)
(IF=8.0A,TC=25
(IF=8.0A,TC=125
0.63
0.57
0.75
0.65
V
voltage per leg
(NOTE 1)
VF
)
Maximum reverse current
at rated DC blocking voltage
@TC=25
0.2
1.0
50
m A
IR
@TC=125
40
/W
Maximum thermal resistance (NOTE 2)
RθJC
TJ
1.5
- 55 ---- + 150
- 55 ---- + 175
Operating junction temperature range
Storage temperature range
TSTG
NOTE: 1. Pulse test:300μs pulse width,1% duty cy cle.
2. Thermal resistance f rom junction to case and thermal resistance f rom junction to ambient.
http://www.luguang.cn
mail:lge@luguang.cn
MBR1635PT-MBR1660PT
Dual Schottky Rectifiers
Ratings AND Charactieristic Curves
FIG.2 -- MAXIMUMNON-REPETITIVEPEAK
FORWARD SURGE CURRENT PERLEG
FIG.1 -- FORWARD CURRENT DERATING CURVE
175
TJ=TJmax.
8.3ms Single Half Sine Wave
(JEDEC Method)
20
Resistive or inductive Load
150
125
16
12
100
75
8
4
50
0
25
0
50
100
150
1
10
100111
CASE TEMPERATURE
NUMBER OF CYCLES AT60Hz
FIG.3 -- TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTIC PERLEG
FIG.4 -- TYPICAL REVERSE CHARACTERISTICS
40
40
10
10
TJ=125
TJ=125
1
Pulse Width=300µs
1% Duty Cycle
TJ=75
1
TJ=25
0.1
0.1
MBR1635PT-MBR1645PT
0.01
MBR1650PT-MBR1660PT
MBR1635PT-MBR1645PT
MBR1650PT-MBR1660PT
TJ=25
0.01
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.11.2
0.001
0
20
40
60
80
100
INSTANTANEOUS FORWARD VOLTAGE,VOLTS
PERCENT OF RATED PEAK REVERSE VOLTAGE,
http://www.luguang.cn
mail:lge@luguang.cn
相关型号：
MBR1635TRL
Rectifier Diode, Schottky, 1 Phase, 1 Element, 16A, 35V V(RRM), Silicon, TO-220AC, PLASTIC PACKAGE-2
INFINEON
MBR1635TRRPBF
Rectifier Diode, Schottky, 1 Phase, 1 Element, 16A, 35V V(RRM), Silicon, TO-220AC, PLASTIC PACKAGE-2
INFINEON
MBR1640
肖特基势垒二极管Schottky Barrier Diodes，高结温低漏电流肖特基势垒二极管High Tjm Low IRRM Schottky Barrier Diodes，Tj = -65°C ~ 175°C, Tjm = 175°C。
SIRECTIFIER
©2020 ICPDF网 联系我们和版权申明