MBR3060CT-J [LGE]

30A High Power Schottky Barrier Rectifiers;


型号：	MBR3060CT-J
厂家：	LGE
描述：	30A High Power Schottky Barrier Rectifiers
文件：	总3页 (文件大小：1650K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

MBR3040CT-J THRU MBR30200CT-J

30A High Power Schottky Barrier Rectifiers

■ Features

■ Outline

• Low power loss, high efficiency.

TO-220AB

• High current capability, low forward voltage drop.

• High surge capability.

• Guardring for overvoltage protection.

•Ultra high-speed switching.

0.420(10.66)

0.386(9.80)

0.197(5.0)MAX

0.055(1.40)

0.043(1.10)

•Silicon epitaxial planar chip, metal silicon junction. Suffix "H"

i•ndicates Halogen-free part, ex.MBR3040CTH-J. Lead-free

p• arts meet environmental standards of

MIL-STD-19500 /228

0.226(5.75)MIN

0.624(15.87)MAX

0.155(3.94)

MAX

Marking code

0.115(2.92)

0.081(2.05)

0.054(1.37)

MAX

0.038(0.96)

0.020(0.50)

0.500(12.70)MIN

■ Mechanical data

0.250(6.35)

MIN

• Epoxy : UL94-V0 rated flame retardant.

• Case : JEDEC TO-220AB molded plastic body over

passivated chip.

0.110(2.80)

0.091(2.30)

0.028(0.70)

0.011(0.28)

• Lead : Axial leads, solderable per MIL-STD-202,

Method 208 guranteed.

PIN 1

PIN 3

PIN 2

• Polarity: Color band denotes cathode end.

• Mounting Position : Any.

Dimensions in inches and (millimeters)

• Weight : Approximated 2.25 gram.

■ Maximum ratings and electrical characteristics

Rating at 25^OC ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

Parameter

Conditions

Symbol

I_O

MIN.

TYP.

MAX.

UNIT

Forward rectified current

See Fig.1

8.3ms single half sine-wave superimposed on

rate load (JEDEC method)

Forward surge current

I_FSM

200

V_R= V_RRMT_A= 25^OC

V_R= V_RRMT_A= 125^OC

0.1

I_R

Reverse current

C_J

Diode junction capacitance

Thermal resistance

f=1MHz and applied 4V DC reverse voltage

Junction to ambient

150

^OC/W

^OC

R_θJA

T_STG

Storage temperature

-55

+175

Max.

RMS voltage

V_RMS(V)

Max. DC

blocking voltage

V_R(V)

Operating

temperature

T_J(^OC)

forward voltage

repetitive peak

reverse voltage

V_RRM(V)

Symbol

Marking code

@15A, T_A= 25^OC @15A, T_A= 125^OC

V_F(V)

MBR3040CT

MBR3045CT

MBR3060CT

MBR3065CT

MBR30100CT

MBR30150CT

MBR30200CT

31.5

MBR3040CT-J

MBR3045CT-J

MBR3060CT-J

MBR3065CT-J

MBR30100CT-J

MBR30150CT-J

MBR30200CT-J

0.70

0.57

-55 ~ +150

-55 ~ +175

0.79

0.70

45.5

100

150

200

100

150

200

0.81

0.87

0.90

0.71

0.77

0.80

105

140

http://www.lgesemi.com

mail:lge@lgesemi.com

Revision:20170701-P1

MBR3040CT-J THRU MBR30200CT-J

30A High Power Schottky Barrier Rectifiers

■ Rating and characteristic curves

Fig. 2 - Maximum Non-Repetitive Peak

Fig.1 - Forward Current Derating Curve

Forward Surge Current

240

200

160

30.0

25.0

20.0

120

15.0

MBR3040CT-J~MBR30100CT-J

MBR30150CT-J~MBR30200CT-J

10.0

5.0

single phase half wave 60Hz

resistive or inductive load

100

125

150

175

100

Lead Temperature ( ^OC)

Number of Cycles at 60 Hz

Fig. 3A - Instantaneous Forward

Characteristics

Fig. 3B - Instantaneous Forward

Characteristics

100

MBR3060CT-J ~ MBR30100CT-J

MBR3040CT-J

T_J=125°C

T_J=25°C

0.2

0.4

0.6

0.8

1.0

0.2

0.4

0.6

0.8

1.0

Instantaneous Forward Voltage (Volts)

Fig. 3C - Instantaneous Forward

Characteristics

Fig. 4 - Reverse Characteristics

100

MBR30150CT-J ~ MBR30200CT-J

T_J=100^OC

T_J=75^OC

T_J=125° C

0.1

0.01

T_J=25^OC

T_J=25°C

0.001

100

120

140

0.2

0.4

0.6

0.8

1.0

Instantaneous Forward Voltage (Volts)

Percent of Rated Peak Reverse Voltage ( %)

http://www.lgesemi.com

mail:lge@lgesemi.com

Revision:20170701-P1

MBR3040CT-J THRU MBR30200CT-J

30A High Power Schottky Barrier Rectifiers

CARTON

SPQ/PCS

CARTON

SIZE/CM

CARTON

GW/KG

CARTON

NW/KG

PACKAGE

SPQ/PCS

TO-220AB

50/tube;1000/BOX

5000

58X23.5X18

15.00

13.00

http://www.lgesemi.com

mail:lge@lgesemi.com

Revision:20170701-P1

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