MMBD770 [LGE]
Schottky Barrier Diodes; 肖特基势垒二极管
| 型号： | MMBD770 |
| 厂家： | 
LGE |
| 描述： | Schottky Barrier Diodes |
| 文件： | 总3页 (文件大小：298K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MMBD330/MMBD770
Schottky Barrier Diodes
SOT-323
Features
Extremely low minority carrier lifetime.
Very low capacitance.
Low reverse leakage.
Applications
Dimensions in inches and (millimeters)
For high-efficiency UHF and VHF detector application.
Ordering Information
Type No.
Marking
Package Code
MMBD330
MMBD770
4T
5H
SOT-323
SOT-323
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Parameter
Symbol
Limits
Unit
Reverse voltage
MMBD330
MMBD770
30
70
VR
V
Forward Continuous Current (DC)
Peak Forward Surge Current
IF
200
1.0
mA
A
IFSM
Power Dissipation
Pd
Tj
120
mW
℃
Junction temperature
Storage temperature range
150
℃
Tstg
-55-+150
http://www.luguang.cn
mail:lge@luguang.cn
MMBD330/MMBD770
Schottky Barrier Diodes
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol
Test conditions
MIN
MAX
UNIT
Reverse Breakdown voltage
30
70
MMBD330
V(BR)R
IR=100μA
V
MMBD770
MMBD330
MMBD770
MMBD330
Reverse current
Forward voltage
VR=25V
VR=35V
200
200
IR
nA
V
IF=1.0mA
0.45
0.60
0.50
1.0
IF=10mA
VF
CD
MMBD770
IF=1.0mA
IF=10mA
Diode capacitance
MMBD330
MMBD770
VR=15V,f=1MHz
VR=20V,f=1MHz
0.9
pF
0.5
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
http://www.luguang.cn
mail:lge@luguang.cn
MMBD330/MMBD770
Schottky Barrier Diodes
http://www.luguang.cn
mail:lge@luguang.cn
相关型号：
MMBD770-T1-LF
Rectifier Diode, Schottky, 1 Element, 0.2A, 70V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-3
WTE
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