MMBD770T1G [ONSEMI]
Schottky Barrier Diodes; 肖特基势垒二极管
| 型号： | MMBD770T1G |
| 厂家： | 
ONSEMI |
| 描述： | Schottky Barrier Diodes |
| 文件： | 总4页 (文件大小：116K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MMBD330T1G,
MMBD770T1G
Schottky Barrier Diodes
Schottky barrier diodes are designed primarily for high-efficiency
UHF and VHF detector applications. Readily available to many other
fast switching RF and digital applications. They are housed in the
SOT-323/SC-70 package which is designed for low-power surface
mount applications.
http://onsemi.com
1
3
Features
Extremely Low Minority Carrier Lifetime
Very Low Capacitance
Low Reverse Leakage
Available in 8 mm Tape and Reel
These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
Compliant
MARKING
DIAGRAMS
3
1
XX M G
2
G
MAXIMUM RATINGS
SC -70/SOT -323
CASE 419
1
Rating
Symbol
Value
Unit
Reverse Voltage
MMBD330T1
V
R
30
70
Vdc
XX
4T
5H
M
= Specific Device Code
MMBD770T1
= MMBD330T1
= MMBD770T1
= Date Code
Forward Continuous Current (DC)
I
F
200
1.0
mA
A
G
= Pb--Free Package
Nonrepetitive Peak Forward Current
(Note 1)
I
FSM
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon the manufacturing location.
Forward Power Dissipation
P
T
120
mW
F
T
A
= 25C
Junction Temperature
-- 55 to +125
-- 55 to +150
C
C
J
ORDERING INFORMATION
Storage Temperature Range
T
stg
†
Device
Package
Shipping
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. 60 Hz Halfsine.
MMBD330T1G
SC--70
(Pb--Free)
3000/Tape & Reel
MMBD770T1G
SC--70
3000/Tape & Reel
(Pb--Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Semiconductor Components Industries, LLC, 2010
1
Publication Order Number:
October, 2010 - Rev. 5
MMBD330T1/D
MMBD330T1G, MMBD770T1G
ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
Reverse Breakdown Voltage
R
V
(BR)R
Volts
(I = 10 mA)
MMBD330T1
MMBD770T1
30
70
--
--
--
--
Diode Capacitance
R
(V = 20 Volts, f = 1.0 MHZ)
R
C
pF
T
(V = 15 Volts, f = 1.0 MHZ)
MMBD330T1
MMBD770T1
--
--
0.9
0.5
1.5
1.0
Reverse Leakage
I
nAdc
Vdc
R
(V = 25 V)
MMBD330T1
MMBD770T1
--
--
13
200
200
R
(V = 35 V)
9.0
R
Forward Voltage
V
F
(I = 1.0 mAdc)
MMBD330T1
MMBD770T1
--
--
--
--
0.38
0.52
0.42
0.70
0.45
0.60
0.50
1.0
F
(I = 10 mA)
F
(I = 1.0 mAdc)
F
(I = 10 mA)
F
TYPICAL CHARACTERISTICS
MMBD330T1
2.8
500
MMBD330T1
MMBD330T1
f = 1.0 MHz
2.4
2.0
1.6
1.2
400
300
200
100
0
KRAKAUER METHOD
0.8
0.4
0
0
3.0 6.0 9.0
12
15
18
21
24
27
30
0
10
20
30
40
50
60
70
80
90 100
V , REVERSE VOLTAGE (VOLTS)
R
I , FORWARD CURRENT (mA)
F
Figure 1. Total Capacitance
Figure 2. Minority Carrier Lifetime
10
100
10
MMBD330T1
T = 100C
MMBD330T1
A
1.0
T = - 40C
A
T = 85C
A
T = 75C
A
0.1
1.0
0.1
T = 25C
A
T = 25C
A
0.01
0.001
0
6.0
12
18
24
30
0.2
0.4
0.6
0.8
1.0
1.2
V , REVERSE VOLTAGE (VOLTS)
R
V , FORWARD VOLTAGE (VOLTS)
F
Figure 3. Reverse Leakage
Figure 4. Forward Voltage
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2
MMBD330T1G, MMBD770T1G
TYPICAL CHARACTERISTICS
MMBD770T1
2.0
1.6
500
MMBD770T1
MMBD770T1
f = 1.0 MHz
400
KRAKAUER METHOD
300
200
100
0
1.2
0.8
0.4
0
0
5.0
10
15
20
25
30
35
40
45
50
0
10
20
30
40
50
60
70
80
90 100
V , REVERSE VOLTAGE (VOLTS)
R
I , FORWARD CURRENT (mA)
F
Figure 5. Total Capacitance
Figure 6. Minority Carrier Lifetime
10
100
10
MMBD770T1
T = 100C
MMBD770T1
A
1.0
T = 85C
A
T = - 40C
A
T = 75C
A
0.1
1.0
0.1
T = 25C
A
0.01
T = 25C
A
0.001
0
10
20
30
40
50
0.2 0.4
0.8
1.2
1.6
2.0
V , REVERSE VOLTAGE (VOLTS)
R
V , FORWARD VOLTAGE (VOLTS)
F
Figure 7. Reverse Leakage
Figure 8. Forward Voltage
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3
MMBD330T1G, MMBD770T1G
PACKAGE DIMENSIONS
SC--70 (SOT--323)
CASE 419--04
ISSUE N
NOTES:
D
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
e1
2. CONTROLLING DIMENSION: INCH.
MILLIMETERS
INCHES
DIM
A
A1
A2
b
c
D
E
e
e1
L
MIN
0.80
0.00
NOM
0.90
0.05
0.70 REF
0.35
0.18
2.10
1.24
1.30
0.65 BSC
0.38
MAX
1.00
0.10
MIN
0.032
0.000
NOM
0.035
0.002
0.028 REF
0.014
0.007
0.083
0.049
0.051
0.026 BSC
0.015
MAX
0.040
0.004
3
E
H
E
1
2
0.30
0.10
1.80
1.15
1.20
0.40
0.25
2.20
1.35
1.40
0.012
0.004
0.071
0.045
0.047
0.016
0.010
0.087
0.053
0.055
b
e
0.20
2.00
0.56
2.40
0.008
0.079
0.022
0.095
H
2.10
0.083
E
c
A
A2
0.05 (0.002)
L
A1
SOLDERING FOOTPRINT*
0.65
0.025
0.65
0.025
1.9
0.075
0.9
0.035
0.7
0.028
mm
inches
SCALE 10:1
*For additional information on our Pb--Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of SemiconductorComponents Industries, LLC (SCILLC). SCILLC reserves the right to make changes without furthernotice
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MMBD330T1/D
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