RBV10005 [LGE]

Silicon Bridge Rectifiers; 硅桥式整流器
RBV10005
型号: RBV10005
厂家: LGE    LGE
描述:

Silicon Bridge Rectifiers
硅桥式整流器

文件: 总2页 (文件大小:159K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
RBV10005-RBV1010  
Silicon Bridge Rectifiers  
VOLTAGE RANGE: 50 --- 1000 V  
CURRENT: 10 A  
KBJ  
Features  
4.7± 0.25  
3.7± 0.2  
Rating to 1000V PRV  
30± 0.3  
Surge overload rating to 300 Amperes peak  
Ideal for printed circuit board  
Reliable low cost construction utilizing molded  
plastic technique results in inexpensive product  
Lead solderable per MIL-STD-202 method 208  
2.8± 0.2  
0.8± 0.15  
2.4± 0.2  
1.0± 0.1  
2.2± 0.2  
10± 0.2 7.5± 0.2 7.5± 0.2  
Mechanical Data  
Polarity:Symbols molded on body  
Weight:0.23 ounces, 6.6 grams  
Mounting position: Any  
Dimensions in millimeters  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25 ambient temperature unless otherwise specified.  
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.  
RBV  
10005 1001  
RBV  
RBV RBV RBV RBV RBV  
1002 1004 1006 1008 1010  
UNITS  
V
V
V
50  
35  
50  
100  
70  
200  
140  
200  
400  
280  
400  
600  
420  
600  
800  
560  
800  
1000  
700  
Maximum recurrent peak reverse voltage  
Maximum RMS voltage  
VRRM  
VRMS  
VDC  
100  
1000  
Maximum DC blocking voltage  
Maximum average forw ard  
A
10  
IF(AV)  
Output current  
@TC=55  
Peak forw ard surge current  
8.3ms single half-sine-w ave  
superimposed on rated load  
A
V
IFSM  
300  
Maximum instantaneous forw ard voltage  
at 5.0 A  
1.0  
VF  
IR  
A
10.0  
0.2  
55  
μ
Maximum reverse current  
@TA=25  
mA  
pF  
at rated DC blocking voltage @TA=100  
Typical junction capacitance per element  
Typical thermal resistance  
CJ  
RθJC  
TJ  
2.5  
/W  
Operating junction temperature range  
Storage temperature range  
- 55 ---- + 150  
- 55 ---- + 150  
TSTG  
NOTES:1.Measured at 1.0MHZ and applied rev erse v oltage of 4.0V DC  
2.Dev ice mounted on 300mm X 300mm X 1.6mm cu Plate heatsink.  
http://www.luguang.cn  
mail:lge@luguang.cn  
RBV10005-RBV1010  
Silicon Bridge Rectifiers  
Ratings AND Charactieristic Curves  
FIG.1 -- PEAK FORWARD SURGE CURRENT  
FIG.2 -- FORWARD DERATING CURVE  
10  
8
300  
8.3ms Single Half Sine Wave  
TJ=125  
6
150  
4
2
0
1
10  
100  
0
0
5 0  
1 0 0  
1 5 0  
NUMBER OF CYCLES AT60H  
CASE TEMPERATURE,  
Z
FIG.3 -- TYPICAL FORWARDCHARACTERISTIC  
FIG.4 -- TYPICAL JUNCTIONCAPACITANCE  
100  
200  
160  
140  
10  
5.0  
120  
100  
1.0  
0.1  
50  
40  
TJ=25  
f=1MHz  
20  
1
.1  
.2  
.4  
1.0  
2
4
10 20  
40  
10  
.01  
.2  
.4  
.6 .8 1.0 1.2 1.4 1.6  
INSTANTANEOUS FORWARDVOLTAGE, VOLTS  
REVERSE VOLTAGE,VOLTS  
http://www.luguang.cn  
mail:lge@luguang.cn  

相关型号:

RBV1000D

SILICON BRIDGE RECTIFIERS
EIC

RBV1000D_05

SILICON BRIDGE RECTIFIERS
EIC

RBV1000_05

SILICON BRIDGE RECTIFIERS
EIC

RBV1001

SILICON BRIDGE RECTIFIERS
EIC

RBV1001

SILICON BRIDGE RECTIFIERS
SYNSEMI

RBV1001

Silicon Bridge Rectifiers
LGE

RBV1001D

SILICON BRIDGE RECTIFIERS
EIC

RBV1002

SILICON BRIDGE RECTIFIERS
EIC

RBV1002

SILICON BRIDGE RECTIFIERS
SYNSEMI

RBV1002

Silicon Bridge Rectifiers
LGE

RBV1002D

SILICON BRIDGE RECTIFIERS
EIC

RBV1002S

Molding Single-Phase Bridge Rectifier
SECOS