RBV2508 [LGE]

Silicon Bridge Rectifiers; 硅桥式整流器


型号：	RBV2508
厂家：	LGE
描述：	Silicon Bridge Rectifiers 硅桥式整流器
文件：	总2页 (文件大小：157K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

RBV25005-RBV2510

Silicon Bridge Rectifiers

VOLTAGE RANGE: 50 --- 1000 V

CURRENT: 25.0 A

KBJ

Features

4.7± 0.25

3.7± 0.2

Rating to 1000V PRV

30± 0.3

Surge overload rating to 200 Amperes peak

Ideal for printed circuit board

Reliable low cost construction utilizing molded

plastic technique results in inexpensive product

Lead solderable per MIL-STD-202 method 208

2.8± 0.2

0.8± 0.15

2.4± 0.2

1.0± 0.1

2.2± 0.2

10± 0.2 7.5± 0.2 7.5± 0.2

Mechanical Data

Polarity:Symbols molded on body

Weight:0.23 ounces, 6.6 grams

Mounting position: Any

Dimensions in millimeters

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25 ambient temperature unless otherwise specified.

Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.

RBV

25005 2501

RBV

RBV RBV RBV RBV

2502 2504 2506 2508

RBV

2510

UNITS

100

200

140

200

400

280

400

600

420

600

800

560

800

1000

700

Maximum recurrent peak reverse voltage

Maximum RMS voltage

V_RRM

V_RMS

V_DC

100

1000

Maximum DC blocking voltage

Maximum average forw ard

25.0

I_F(AV)

Output current

@T_A=25

Peak forw ard surge current

8.3ms single half-sine-w ave

superimposed on rated load

I_FSM

300

Maximum instantaneous forw ard voltage

at 12.5 A

1.1

V_F

I_R

10.0

0.2

Maximum reverse current

@T_A=25

at rated DC blocking voltage @T_A=100

Typical junction capacitance per element

Typical thermal resistance

C_J

R_θJC

T_J

0.6

Operating junction temperature range

Storage temperature range

- 55 ---- + 150

T_STG

NOTES:1.Measured at 1.0MH_Zand applied rev erse v oltage of 4.0V DC

2.Dev ice mounted on 300mm X 300mm X 1.6mm cu Plate heatsink.

http://www.luguang.cn

mail:lge@luguang.cn

RBV25005-RBV2510

Silicon Bridge Rectifiers

Ratings AND Charactieristic Curves

FIG.1 -- PEAK FORWARD SURGE CURRENT

FIG.2 -- FORWARD DERATING CURVE

5 0

4 0

3 0

2 0

1 0

375

300

8.3ms Single Half Sine Wave

T^J=150

150

100

5 0

1 0 0

1 5 0

NUMBER OF CYCLES AT60H

AMBIENT TEMPERATURE,

FIG.3 -- TYPICAL FORWARDCHARACTERISTIC

FIG.4 -- TYPICAL JUNCTIONCAPACITANCE

100

200

160

140

120

100

1.0

0.1

T^J=25

f=1MHz

1.0

10 20

.01

.6 .8 1.0 1.2 1.4 1.6

INSTANTANEOUS FORWARDVOLTAGE, VOLTS

REVERSE VOLTAGE,VOLTS

http://www.luguang.cn

mail:lge@luguang.cn

相关型号：