LA45B/2G-R1-PF [LIGITEK]

Optoelectronic Device;
LA45B/2G-R1-PF
型号: LA45B/2G-R1-PF
厂家: LIGITEK ELECTRONICS CO., LTD.    LIGITEK ELECTRONICS CO., LTD.
描述:

Optoelectronic Device

文件: 总6页 (文件大小:104K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
LIGITEK ELECTRONICS CO.,LTD.  
Property of Ligitek Only  
LED ARRAY  
Pb  
Lead-Free Parts  
LA45B/2G-R1-PF  
DATA SHEET  
DOC. NO : QW0905-LA45B/2G-R1-PF  
REV.  
: A  
DATE  
: 22 - Sep.- 2008  
LIGITEK ELECTRONICS CO.,LTD.  
Property of Ligitek Only  
PART NO. LA45B/2G-R1-PF  
Page 1/5  
Package Dimensions  
3.0±0.5  
4.6  
10.0  
ψ2.9X2  
G
5.0  
ψ3.4X2  
10.0  
G
2.75  
3.0±0.5  
0.5  
TYP  
2.54TYP  
6.0±0.5  
8.5±0.5  
-
+
LG2640-1/H-PF  
2.9  
3.3  
3.1  
4.3  
1.5MAX  
25.0MIN  
1.0MIN  
0.5  
TYP  
2.54TYP  
+
-
Note : 1.All dimension are in millimeter tolerance is ±0.25mm unless otherwise noted.  
2.Specifications are subject to change without not  
ice.  
LIGITEK ELECTRONICS CO.,LTD.  
Property of Ligitek Only  
PART NO. LA45B/2G-R1-PF  
Page 2/5  
Absolute Maximum Ratings at Ta=25  
Ratings  
G
Symbol  
Parameter  
UNIT  
IF  
IFP  
PD  
Ir  
30  
Forward Current  
mA  
mA  
Peak Forward Current  
Duty 1/10@10KHz  
120  
mW  
μA  
Power Dissipation  
100  
Reverse Current @5V  
Operating Temperature  
Storage Temperature  
10  
Topr  
Tstg  
-40 ~ +85  
-40 ~ +100  
Typical Electrical & Optical Characteristics (Ta=25 )  
Forward  
voltage  
@20mA(V)  
Luminous  
intensity  
@10mA(mcd)  
Peak  
wave  
length  
λPnm  
Viewing  
angle  
2θ 1/2  
(deg)  
Spectral  
halfwidth  
△λnm  
COLOR  
PART NO  
MATERIAL  
GaP  
Typ.  
20  
Emitted  
Lens  
Min. Max. Min.  
LA45B/2G-R1-PF  
Green Green Diffused  
565  
30  
1.7  
2.6  
12  
50  
Note : 1.The forward voltage data did not including ±0.1V testing tolerance.  
2. The luminous intensity data did not including ±15% testing tolerance.  
LIGITEK ELECTRONICS CO.,LTD.  
Property of Ligitek Only  
Page 3/5  
PART NO. LA45B/2G-R1-PF  
Typical Electro-Optical Characteristics Curve  
G CHIP  
Fig.1 Forward current vs. Forward Voltage  
Fig.2 Relative Intensity vs. Forward Current  
3.5  
3.0  
2.5  
2.0  
1.5  
1000  
100  
10  
1.0  
0.5  
1.0  
0.0  
0.1  
1.0  
2.0  
3.0  
4.0  
5.0  
1.0  
10  
100  
1000  
Forward Current(mA)  
Forward Voltage(V)  
Fig.3 Forward Voltage vs. Temperature  
Fig.4 Relative Intensity vs. Temperature  
3.0  
1.2  
2.5  
2.0  
1.1  
1.0  
1.5  
1.0  
0.5  
0.9  
0.8  
0.0  
-40  
-20  
0
20  
40  
60  
80  
100  
-40  
-20  
0
20  
40  
60  
80  
100  
Ambient Temperature()  
Ambient Temperature()  
Fig.5 Relative Intensity vs. Wavelength  
1.0  
0.5  
0.0  
500  
550  
600  
650  
Wavelength (nm)  
LIGITEK ELECTRONICS CO.,LTD.  
Property of Ligitek Only  
PART NO. LA45B/2G-R1-PF  
Page 4/5  
Soldering Condition(Pb-Free)  
1.Iron:  
Soldering Iron:30W Max  
Temperature 350°C Max  
Soldering Time:3 Seconds Max(One time only)  
Distance:2mm Min(From solder joint to case)  
2.Wave Soldering Profile  
Dip Soldering  
Preheat: 120°C Max  
Preheat time: 60seconds Max  
Ramp-up  
2°C/sec(max)  
Ramp-Down:-5°C/sec(max)  
Solder Bath:260°C Max  
Dipping Time:3 seconds Max  
Distance:2mm Min(From solder joint to case)  
Temp(°C)  
260°C3sec Max  
260°  
5°/sec  
max  
120°  
2°/sec  
25°  
0°  
max  
0
50  
150  
Time(sec)  
100  
Preheat  
60 Seconds Max  
Note: 1.Wave solder should not be made more than one time.  
2.You can just only select one of the soldering conditions as above.  
LIGITEK ELECTRONICS CO.,LTD.  
Property of Ligitek Only  
Page 5/5  
PART NO. LA45B/2G-R1-PF  
Reliability Test:  
Reference  
Standard  
Description  
Test Item  
Test Condition  
1.Under Room Temperature  
2.If=20mA  
3.t=1000 hrs (-24hrs, +72hrs)  
MIL-STD-750: 1026  
MIL-STD-883: 1005  
JIS C 7021: B-1  
This test is conducted for the purpose  
of detemining the resistance of a part  
in electrical and themal stressed.  
Operating Life Test  
The purpose of this is the resistance of  
the device which is laid under condition  
of high temperature for hours.  
High Temperature  
Storage Test  
1.Ta=105 ℃±5℃  
2.t=1000 hrs (-24hrs, +72hrs)  
MIL-STD-883:1008  
JIS C 7021: B-10  
The purpose of this is the resistance  
of the device which is laid under  
condition of low temperature for hours.  
Low Temperature  
Storage Test  
1.Ta=-40 ℃±5℃  
2.t=1000 hrs (-24hrs, +72hrs)  
JIS C 7021: B-12  
1.Ta=65℃±5℃  
2.RH=90%~95%  
3.t=240hrs ±2hrs  
High Temperature  
High Humidity Test  
The purpose of this test is the resistance  
of the device under tropical for hours.  
MIL-STD-202:103B  
JIS C 7021: B-11  
The purpose of this is the resistance of  
the device to sudden extreme changes  
in high and low temperature.  
1.Ta=105 ℃±5&-40℃±5℃  
(10min) (10min)  
2.total 10 cycles  
MIL-STD-202: 107D  
MIL-STD-750: 1051  
MIL-STD-883: 1011  
Thermal Shock Test  
This test intended to determine the  
thermal characteristic resistance  
of the device to sudden exposures  
at extreme changes in temperature  
when soldering the lead wire.  
MIL-STD-202: 210A  
MIL-STD-750: 2031  
JIS C 7021: A-1  
Solder Resistance  
Test  
1.T.Sol=260 ℃±5℃  
2.Dwell time= 10 ±1sec.  
MIL-STD-202: 208D  
MIL-STD-750: 2026  
MIL-STD-883: 2003  
JIS C 7021: A-2  
This test intended to see soldering well  
performed or not.  
1.T.Sol=230 ℃±5℃  
2.Dwell time=5 ±1sec  
Solderability Test  

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