LBD101-24-XX [LIGITEK]

BAR DIGIT LED DISPLAY; 英美位LED显示


型号：	LBD101-24-XX
厂家：	LIGITEK ELECTRONICS CO., LTD.
描述：	BAR DIGIT LED DISPLAY 英美位LED显示
文件：	总8页 (文件大小：114K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

LIGITEK ELECTRONICS CO.,LTD.

Property of Ligitek Only

BAR DIGIT LED DISPLAY

LBD101/24-XX

DATA SHEET

DOC. NO : QW0905-LBD101/24-XX

REV.

: A

DATE

: 13 - Feb. - 2006

LIGITEK ELECTRONICS CO.,LTD.

Property of Ligitek Only

Page 1/7

PART NO. LBD101/24-XX

Package Dimensions

1.75(0.069")

10.1

7.6

5.0

(0.398")

(0.299")

(0.197")

ORIENTATION

MARK

LBD101/24-XX

LIGITEK

25.3(0.996")

8.0(0.315")

ψ0.45

TYP

6.0±0.5

22.4(0.882")

PINNO.1

Note : 1.All dimension are in millimeters and (lnch) tolerance is ±0.25mm unless otherwise noted.

2.Specifications are subject to change without notice.

LIGITEK ELECTRONICS CO.,LTD.

Property of Ligitek Only

Page 2/7

PART NO. LBD101/24-XX

Internal Circuit Diagram

LBD1014-XX

20 19 18 16 15 13

14 12 11

1 2 3 4 5 6 7 8 9 10

LBD1024-XX

20 19 18 17 16 15 14 13 12 11

5 6

8 9 10

1 2

LIGITEK ELECTRONICS CO.,LTD.

Property of Ligitek Only

Page 3/7

PART NO. LBD101/24-XX

Electrical Connection

LBD1014-XX

PIN NO.

11.

12.

13.

14.

15.

16.

17.

18.

19.

20.

Cathode

Anode

10.

Anode

LBD1024-XX

PIN11N.O.

10.

Cathode

11.

12.

13.

14.

15.

16.

17.

18.

19.

20.

Anode

LIGITEK ELECTRONICS CO.,LTD.

Property of Ligitek Only

Page 4/7

PART NO. LBD101/24-XX

Absolute Maximum Ratings at Ta=25 ℃

Ratings

Symbol

Parameter

UNIT

Forward Current Per Chip

Peak Forward Current Per

Chip (Duty 1/10,0.1ms

Pulse Width)

IFP

120

Power Dissipation Per Chip

100

μA

Reverse Current Per Any Chip

Operating Temperature

Storage Temperature

Topr

Tstg

-25 ~ +85

℃

Solder Temperature 1/16 Inch Below Seating Plane For 3 Seconds At 260 ℃

Part Selection And Application Information(Ratings at 25℃)

Electrical

common

cathode

or anode

CHIP

λP △λ

Vf(v)

Typ.

Iv(mcd)

Typ.

Max. Min.

IV-M

2:1

PART NO

(nm)

Material Emitted

Min.

1.7

Common

Cathode

LBD1014-XX

LBD1024-XX

Orange

GaAsP/GaP

635

2.1 2.6 2.35 4.0

Common

Anode

Note : 1.The forward voltage data did not including ±0.1V testing tolerance.

2. The luminous intensity data did not including ±15% testing tolerance.

LIGITEK ELECTRONICS CO.,LTD.

Property of Ligitek Only

Page 5/7

PART NO. LBD101/24-XX

Test Condition For Each Parameter

Symbol

Unit

volt

Test Condition

Parameter

Forward Voltage Per Chip

If=20mA

If=10mA

If=20mA

Vr=5V

Luminous Intensity Per Chip

Peak Wavelength

λp

△λ

mcd

Spectral Line Half-Width

Reverse Current Any Chip

Luminous Intensity Matching Ratio

μA

IV-M

LIGITEK ELECTRONICS CO.,LTD.

Property of Ligitek Only

Page

6/7

PART NO. LBD101/24-XX

Typical Electro-Optical Characteristics Curve

E CHIP

Fig.1 Forward current vs. Forward Voltage

Fig.2 Relative Intensity vs. Forward Current

3.0

2.5

2.0

1000

100

1.5

1.0

0.1

0.5

0.0

1.0

2.0

3.0

4.0

5.0

1.0

100

1000

Forward Current(mA)

Forward Voltage(V)

Fig.3 Forward Voltage vs. Temperature

Fig.4 Relative Intensity vs. Temperature

1.2

1.1

1.0

0.9

0.8

3.0

2.5

2.0

1.5

1.0

0.5

0.0

-40

-20

100

-40

-20

100

Ambient Temperature(℃)

Fig.5 Relative Intensity vs. Wavelength

1.0

0.5

0.0

550

600

650

700

750

Wavelength (nm)

LIGITEK ELECTRONICS CO.,LTD.

Property of Ligitek Only

Page 7/7

PART NO. LBD101/24-XX

Reliability Test:

Reference

Standard

Description

Test Item

Test Condition

1.Under Room Temperature

2.If=10mA

3.t=1000 hrs (-24hrs, +72hrs)

This test is conducted for the purpose

of detemining the resistance of a part

in electrical and themal stressed.

MIL-STD-750: 1026

MIL-STD-883: 1005

JIS C 7021: B-1

Operating Life Test

The purpose of this is the resistance of

the device which is laid under condition

of high temperature for hours.

High Temperature

Storage Test

1.Ta=105℃±5℃

2.t=1000 hrs (-24hrs, +72hrs)

MIL-STD-883:1008

JIS C 7021: B-10

The purpose of this is the resistance

of the device which is laid under

condition of low temperature for hours.

Low Temperature

Storage Test

1.Ta=-40℃±5℃

2.t=1000 hrs (-24hrs, +72hrs)

JIS C 7021: B-12

1.Ta=65℃±5℃

2.RH=90%~95%

3.t=240hrs ±2hrs

High Temperature

High Humidity Test

The purpose of this test is the resistance

of the device under tropical for hours.

MIL-STD-202:103B

JIS C 7021: B-11

The purpose of this is the resistance of

the device to sudden extreme changes

in high and low temperature.

1.Ta=105℃±5℃&-40℃±5℃

(10min) (10min)

2.total 10 cycles

MIL-STD-202: 107D

MIL-STD-750: 1051

MIL-STD-883: 1011

Thermal Shock Test

This test intended to determine the

thermal characteristic resistance

of the device to sudden exposures

at extreme changes in temperature

when soldering the lead wire.

MIL-STD-202: 210A

MIL-STD-750: 2031

JIS C 7021: A-1

Solder Resistance

Test

1.T.Sol=260 ℃±5℃

2.Dwell time= 10 ±1sec.

MIL-STD-202: 208D

MIL-STD-750: 2026

MIL-STD-883: 2003

JIS C 7021: A-2

This test intended to see soldering well

performed or not.

1.T.Sol=230 ℃±5℃

2.Dwell time=5 ±1sec

Solderability Test

相关型号：