LBD2412-XX-PF [LIGITEK]
LIGHT BAR LED DISPLAY; 灯条LED显示屏
| 型号： | LBD2412-XX-PF |
| 厂家： | 
LIGITEK ELECTRONICS CO., LTD. |
| 描述： | LIGHT BAR LED DISPLAY |
| 文件： | 总8页 (文件大小：147K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
LIGHT BAR LED DISPLAY
Pb
Lead-Free Parts
LBD2412-XX-PF
DATA SHEET
DOC. NO : QW0905-LBD2412-XX-PF
REV.
: A
DATE
: 11 - May.- 2009
發行
立碁電子
DCC
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
PART NO. LBD2412-XX-PF
Page 1/7
Package Dimensions
10.0(0.39")
9.0(0.35")
7.0(0.28")
8.0(0.31")
7.0(0.28")
1.8
LBD2412-XX-PF
LIGITEK
0.51
TYP
5.0±0.5
2.54*3=7.62(0.3")
PIN NO.1
Note : 1.All dimension are in millimeters and (lnch) tolerance is ±0.25mm unless otherwise noted.
2.Specifications are subject to change without notice.
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
PART NO. LBD2412-XX-PF
Page 2/7
Internal Circuit Diagram
LBD2412-XX-PF
1
3
2
4
Electrical Connection
PIN NO.
1
LBD2412-XX-PF
Anode
Cathode
Anode
2
3
Cathode
4
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
PART NO.
Page 3/7
LBD2412-XX-PF
Absolute Maximum Ratings at Ta=25 ℃
Ratings
Symbol
Parameter
UNIT
G
Forward Current Per Chip
30
IF
mA
mA
Peak Forward Current Per
Chip (Duty 1/10,0.1ms
Pulse Width)
IFP
120
Power Dissipation Per Chip
mW
PD
100
10
μA
Reverse Current Per Any Chip
Operating Temperature
Ir
Topr
Tstg
-25 ~ +85
-25 ~ +85
℃
℃
Storage Temperature
Part Selection And Application Information(Ratings at 25℃)
Electrical
common
cathode
or anode
CHIP
λP
(nm)
△λ
(nm)
Vf(v)
Typ.
Iv(mcd)
Typ.
Max. Min.
IV-M
2:1
PART NO
Material Emitted
Min.
1.7
Common
Cathode
LBD2412-XX-PF
565
30
2.1 2.6 7.2 12.8
GaP
Green
Note : 1.The forward voltage data did not including ±0.1V testing tolerance.
2. The luminous intensity data did not including ±15% testing tolerance.
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
PART NO.
Page 4/7
LBD2412-XX-PF
Test Condition For Each Parameter
Symbol
Vf
Unit
volt
Test Condition
If=20mA
If=20mA
If=20mA
If=20mA
Vr=5V
Parameter
Forward Voltage Per Chip
Luminous Intensity
Iv
mcd
nm
Peak Wavelength
λP
△λ
Ir
Spectral Line Half-Width
Reverse Current Any Chip
Luminous Intensity Matching Ratio
nm
μA
IV-M
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
Page 5/7
PART NO.
LBD2412-XX-PF
Typical Electro-Optical Characteristics Curve
G CHIP
Fig.1 Forward current vs. Forward Voltage
Fig.2 Relative Intensity vs. Forward Current
3.5
3.0
2.5
2.0
1.5
1000
100
10
1.0
0.5
1.0
0.0
0.1
1.0
2.0
3.0
4.0
5.0
1.0
10
100
1000
Forward Current(mA)
Forward Voltage(V)
Fig.3 Forward Voltage vs. Temperature
Fig.4 Relative Intensity vs. Temperature
3.0
1.2
2.5
2.0
1.1
1.0
1.5
1.0
0.5
0.9
0.8
0.0
-40
-20
0
20
40
60
80
100
-40
-20
0
20
40
60
80
100
Ambient Temperature(℃)
Ambient Temperature(℃)
Fig.5 Relative Intensity vs. Wavelength
Fig.6 Directive Radiation
1.0
0.5
0.0
500
550
600
650
Wavelength (nm)
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
PART NO. LBD2412-XX-PF
Page 6/7
Soldering Condition(Pb-Free)
1.Iron:
Soldering Iron:30W Max
Temperature 350°C Max
Soldering Time:3 Seconds Max(One Time)
Distance:Solder Temperature 1/16 Inch Below Seating
Plane For 3 Seconds At 260°C
2.Wave Soldering Profile
Dip Soldering
Preheat: 120°C Max
Preheat time: 60seconds Max
Ramp-up
2°C/sec(max)
Ramp-Down:-5°C/sec(max)
Solder Bath:260°C Max
Dipping Time:3 seconds Max
Distance:Solder Temperature 1/16 Inch Below Seating
Plane For 3 Seconds At 260°C
Temp(°C)
260°C3sec Max
260°
5°/sec
max
120°
2°/sec
25°
0°
max
0
50
150
Time(sec)
100
Preheat
60 Seconds Max
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
PART NO. LBD2412-XX-PF
Page 7/7
Reliability Test:
Reference
Standard
Description
Test Item
Test Condition
1.Under Room Temperature
2.If=10mA
3.t=1000 hrs (-24hrs, +72hrs)
This test is conducted for the purpose
of detemining the resistance of a part
in electrical and themal stressed.
MIL-STD-750: 1026
MIL-STD-883: 1005
JIS C 7021: B-1
Operating Life Test
The purpose of this is the resistance of
the device which is laid under condition
of high temperature for hours.
High Temperature
Storage Test
1.Ta=105 ℃±5℃
2.t=1000 hrs (-24hrs, +72hrs)
MIL-STD-883:1008
JIS C 7021: B-10
The purpose of this is the resistance
of the device which is laid under
condition of low temperature for hours.
Low Temperature
Storage Test
1.Ta=-40 ℃±5℃
2.t=1000 hrs (-24hrs, +72hrs)
JIS C 7021: B-12
1.Ta=65℃±5℃
2.RH=90%~95%
3.t=240hrs ±2hrs
High Temperature
High Humidity Test
The purpose of this test is the resistance
of the device under tropical for hours.
MIL-STD-202:103B
JIS C 7021: B-11
The purpose of this is the resistance of
the device to sudden extreme changes
in high and low temperature.
1.Ta=105 ℃±5℃&-40℃±5℃
(10min) (10min)
2.total 10 cycles
MIL-STD-202: 107D
MIL-STD-750: 1051
MIL-STD-883: 1011
Thermal Shock Test
This test intended to determine the
thermal characteristic resistance
of the device to sudden exposures
at extreme changes in temperature
when soldering the lead wire.
MIL-STD-202: 210A
MIL-STD-750: 2031
JIS C 7021: A-1
Solder Resistance
Test
1.T.Sol=260 ℃±5℃
2.Dwell time= 10 ±1sec.
MIL-STD-202: 208D
MIL-STD-750: 2026
MIL-STD-883: 2003
JIS C 7021: A-2
This test intended to see soldering well
performed or not.
1.T.Sol=230 ℃±5℃
2.Dwell time=5 ±1sec
Solderability Test
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