B170 [LITEON]
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS; 表面贴装肖特基二极管型号: | B170 |
厂家: | LITE-ON TECHNOLOGY CORPORATION |
描述: | SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS |
文件: | 总2页 (文件大小:39K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
LITE-ON
SEMICONDUCTOR
B170 thru B1100
SURFACE MOUNT
SCHOTTKY BARRIER RECTIFIERS
REVERSE VOLTAGE - 70 to 100 Volts
FORWARD CURRENT - 1.0 Ampere
FEATURES
For surface mounted applications
SMA
Metal-Semiconductor junction with guardring
Epitaxial construction
SMA
Very Low forward voltage drop
DIM.
A
MIN.
4.06
2.29
1.27
0.15
4.83
0.05
2.01
0.76
MAX.
4.57
2.92
1.63
0.31
5.59
0.20
2.62
1.52
A
High current capability
Plastic material has UL flammability classification 94V-0
For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
B
B
C
C
D
E
F
G
G
H
D
H
F
E
MECHANICAL DATA
Case : Molded plastic
All Dimensions in millimeter
Polarity : Indicated by cathode band
Weight : 0.002 ounces, 0.064 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
℃
Ratings at 25 ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
B170
B180
B190
B1100
CHARACTERISTICS
SYMBOL
UNIT
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
70
49
70
80
56
80
90
63
90
100
70
RRM
RMS
V
V
V
V
V
Maximum DC Blocking Voltage
100
DC
V
Maximum Average Forward
Rectified Current
A
(AV)
I
1.0
@T =100 C
L
Peak Forward Surge Current
8.3ms single half sine-wave
super imposed on rated load (JEDEC METHOD)
A
FSM
I
30
Maximum forward
Voltage at 1.0A DC
0.79
0.69
@T
@T
J
=25 C
F
V
V
J
=100 C
Maximum DC Reverse Current
at Rated DC Blocking Voltage
J
0.5
5.0
@T =25 C
R
I
mA
pF
@T =100 C
J
Typical Junction
Capacitance (Note 1)
J
C
30
25
Typical Thermal Resistance (Note 2)
R
0JL
C/W
Operating Temperature Range
Storage Temperature Range
C
C
J
T
-55 to +125
-55 to +150
STG
T
NOTES : 1.Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
2.Thermal Resistance Junction to Lead.
REV. 2, 01-Dec-2000, KSHA02
RATING AND CHARACTERISTIC CURVES
B170 thru B1100
FIG.1 - FORWARD CURRENT DERATING CURVE
FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT
1.0
30
0.8
0.6
20
0.4
10
0.2
Pulse Width 8.3ms
Single Half-Sine-Wave
(JEDEC METHOD)
0
SINGLE PHASE HALF WAVE 60Hz
RESISTIVE OR INDUCTIVE LOAD
0
20
20
40
60
80
90
100
120
140
1
2
5
10
50
100
LEAD TEMPERATURE , C
NUMBER OF CYCLES AT 60Hz
FIG.4 - TYPICAL JUNCTION CAPACITANCE
FIG.3 - TYPICAL FORWARD CHARACTERISTICS
1000
10
1.0
100
0.1
.01
TJ = 25 C
TJ = 25 C F= 1MHz
PULSEWIDTH:300us
10
0.1
100
1.4
1.6
1.0
4.0
10.0
0.2
0.4
0.6
0.8
1.0
1.2
1.8
0
REVERSE VOLTAGE , (VOLTS)
INSTANTANEOUS FORWARD VOLTAGE , (VOLTS)
FIG.5 - TYPICAL REVERSE CHARACTERISTICS
100
10
TJ = 125 C
TJ = 100 C
1.0
0.1
TJ = 25 C
0.01
0.001
120
PERCENT OF RATED PEAK REVERSE VOLTAGE, (%)
140
20
40
60
80
90
100
0
REV. 2, 01-Dec-2000, KSHA02
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