B170 [LITEON]

SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS; 表面贴装肖特基二极管
B170
型号: B170
厂家: LITE-ON TECHNOLOGY CORPORATION    LITE-ON TECHNOLOGY CORPORATION
描述:

SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS
表面贴装肖特基二极管

肖特基二极管 光电二极管
文件: 总2页 (文件大小:39K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
LITE-ON  
SEMICONDUCTOR  
B170 thru B1100  
SURFACE MOUNT  
SCHOTTKY BARRIER RECTIFIERS  
REVERSE VOLTAGE - 70 to 100 Volts  
FORWARD CURRENT - 1.0 Ampere  
FEATURES  
For surface mounted applications  
SMA  
Metal-Semiconductor junction with guardring  
Epitaxial construction  
SMA  
Very Low forward voltage drop  
DIM.  
A
MIN.  
4.06  
2.29  
1.27  
0.15  
4.83  
0.05  
2.01  
0.76  
MAX.  
4.57  
2.92  
1.63  
0.31  
5.59  
0.20  
2.62  
1.52  
A
High current capability  
Plastic material has UL flammability classification 94V-0  
For use in low voltage, high frequency inverters,  
free wheeling, and polarity protection applications  
B
B
C
C
D
E
F
G
G
H
D
H
F
E
MECHANICAL DATA  
Case : Molded plastic  
All Dimensions in millimeter  
Polarity : Indicated by cathode band  
Weight : 0.002 ounces, 0.064 grams  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25 ambient temperature unless otherwise specified.  
Single phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%  
B170  
B180  
B190  
B1100  
CHARACTERISTICS  
SYMBOL  
UNIT  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
70  
49  
70  
80  
56  
80  
90  
63  
90  
100  
70  
RRM  
RMS  
V
V
V
V
V
Maximum DC Blocking Voltage  
100  
DC  
V
Maximum Average Forward  
Rectified Current  
A
(AV)  
I
1.0  
@T =100 C  
L
Peak Forward Surge Current  
8.3ms single half sine-wave  
super imposed on rated load (JEDEC METHOD)  
A
FSM  
I
30  
Maximum forward  
Voltage at 1.0A DC  
0.79  
0.69  
@T  
@T  
J
=25 C  
F
V
V
J
=100 C  
Maximum DC Reverse Current  
at Rated DC Blocking Voltage  
J
0.5  
5.0  
@T =25 C  
R
I
mA  
pF  
@T =100 C  
J
Typical Junction  
Capacitance (Note 1)  
J
C
30  
25  
Typical Thermal Resistance (Note 2)  
R
0JL  
C/W  
Operating Temperature Range  
Storage Temperature Range  
C
C
J
T
-55 to +125  
-55 to +150  
STG  
T
NOTES : 1.Measured at 1.0MHz and applied reverse voltage of 4.0V DC.  
2.Thermal Resistance Junction to Lead.  
REV. 2, 01-Dec-2000, KSHA02  
RATING AND CHARACTERISTIC CURVES  
B170 thru B1100  
FIG.1 - FORWARD CURRENT DERATING CURVE  
FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT  
1.0  
30  
0.8  
0.6  
20  
0.4  
10  
0.2  
Pulse Width 8.3ms  
Single Half-Sine-Wave  
(JEDEC METHOD)  
0
SINGLE PHASE HALF WAVE 60Hz  
RESISTIVE OR INDUCTIVE LOAD  
0
20  
20  
40  
60  
80  
90  
100  
120  
140  
1
2
5
10  
50  
100  
LEAD TEMPERATURE , C  
NUMBER OF CYCLES AT 60Hz  
FIG.4 - TYPICAL JUNCTION CAPACITANCE  
FIG.3 - TYPICAL FORWARD CHARACTERISTICS  
1000  
10  
1.0  
100  
0.1  
.01  
TJ = 25 C  
TJ = 25 C F= 1MHz  
PULSEWIDTH:300us  
10  
0.1  
100  
1.4  
1.6  
1.0  
4.0  
10.0  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.8  
0
REVERSE VOLTAGE , (VOLTS)  
INSTANTANEOUS FORWARD VOLTAGE , (VOLTS)  
FIG.5 - TYPICAL REVERSE CHARACTERISTICS  
100  
10  
TJ = 125 C  
TJ = 100 C  
1.0  
0.1  
TJ = 25 C  
0.01  
0.001  
120  
PERCENT OF RATED PEAK REVERSE VOLTAGE, (%)  
140  
20  
40  
60  
80  
90  
100  
0
REV. 2, 01-Dec-2000, KSHA02  

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