A2106UA3L [LITTELFUSE]
Silicon Surge Protector, 20A, ROHS COMPLIANT, SMT, MODIFIED MS-013, 6 PIN;
| 型号： | A2106UA3L |
| 厂家： | 
LITTELFUSE |
| 描述： | Silicon Surge Protector, 20A, ROHS COMPLIANT, SMT, MODIFIED MS-013, 6 PIN 光电二极管 |
| 文件： | 总3页 (文件大小：170K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Balanced Three-chip SIDACtor® Device
RoHS
This six-pin SMT package offers a guaranteed balanced protection, based on a Littelfuse
patent (US Patent 4,905,119). The ‘Y’ configuration offers identical metallic and longitudinal
protection all in one package.
1
2
3
6
5
4
SIDACtor devices enable equipment to comply with various regulatory requirements
including GR 1089, ITU K.20, K.21, and K.45, IEC 60950, UL 60950, and TIA-968-A
(formerly known as FCC Part 68).
Electrical Parameters
V
V
V
V
S
DRM
S
DRM
Volts
Volts
Volts
Volts
Part
V
I
I
S
I
T
I
H
T
DRM
Number *
Pins 1-3, 1-4
Pins 3-4
Volts
µAmps
mAmps
Amps
mAmps
P1553U_L
P1803U_L
P2103U_L
P2353U_L
P2703U_L
P3203U_L
P3403U_L
P5103U_L
130
150
170
200
230
270
300
420
180
210
250
270
300
350
400
600
130
150
170
200
230
270
300
420
180
210
250
270
300
350
400
600
8
8
8
8
8
8
8
8
5
5
5
5
5
5
5
5
800
2.2
150
800
2.2
150
800
2.2
150
800
2.2
150
800
2.2
150
800
2.2
150
800
2.2
150
800
2.2
150
V
V
V
V
S
DRM
S
DRM
Volts
Volts
Volts
Volts
Part
V
I
I
S
I
T
I
H
T
DRM
Number *
Pins 1-3, 1-4
Pins 3-4
Volts
µAmps
mAmps
Amps
mAmps
A2106U_3L **
A5030U_3L **
170
400
250
550
50
80
8
8
5
5
800
2.2
120
270
340
800
2.2
120
* “L” in part number indicates RoHS compliance. For non-RoHS compliant device, delete “L” from part number.
For individual “UA”, “UB”, and “UC” surge ratings, see table below.
** Asymmetrical
General Notes:
•
•
•
•
•
•
•
All measurements are made at an ambient temperature of 25 °C. I applies to -40 °C through +85 °C temperature range.
PP
I
PP
is a repetitive surge rating and is guaranteed for the life of the product.
Listed SIDACtor devices are bi-directional. All electrical parameters and surge ratings apply to forward and reverse polarities.
V
V
is measured at I
DRM.
is measured at 100 V/µs.
DRM
S
Special voltage (V and V
) and holding current (I ) requirements are available upon request.
DRM H
S
Device is designed to meet balance requirements of GTS 8700 and GR 974.
Surge Ratings in Amps
I
PP
0.2x310 * 2x10 *
8x20 *
10x160 * 10x560 * 5x320 * 10x360 * 10x1000 * 5x310 *
I
TSM
0.5x700 ** 2x10 ** 1.2x50 ** 10x160 ** 10x560 ** 9x720 ** 10x360 ** 10x1000 ** 10x700 ** 50 / 60 Hz
di/dt
Amps/µs
500
Amps
20
Amps
150
Amps
150
Amps
90
Amps
50
Amps
75
Amps
75
Amps
45
Amps
75
Amps
20
A
B
C
25
250
250
150
200
100
150
100
200
125
175
80
100
200
30
500
50
500
400
100
50
500
* Current waveform in µs
** Voltage waveform in µs
Telecom Design Guide • © 2006 Littelfuse
3 - 31
www.littelfuse.com
Balanced Three-chip SIDACtor® Device
Thermal Considerations
Package
Symbol
Parameter
Operating Junction Temperature Range
Storage Temperature Range
Value
-40 to +125
-65 to +150
60
Unit
°C
Modified MS-013
T
J
6
5
4
T
°C
S
R
Thermal Resistance: Junction to Ambient
°C/W
θJA
1
2
3
Capacitance Values
pF
pF
Pin 3-4
Tip-Ring
Pin 1-3 (4-6)
Tip-Ground, Ring-Ground
Part Number
P1553UAL
P1553UBL
P1553UCL
P1803UAL
P1803UBL
P1803UCL
P2103UAL
P2103UBL
P2103UCL
P2353UAL
P2353UBL
P2353UCL
P2703UAL
P2703UBL
P2703UCL
P3203UAL
P3203UBL
P3203UCL
P3403UAL
P3403UBL
P3403UCL
P5103UAL
P5103UBL
P5103UCL
A2106UA3L
A2106UB3L
A2106UC3L
A5030UA3L
A5030UB3L
A5030UC3L
MIN
MAX
95
95
95
85
85
85
85
85
85
75
75
75
75
75
75
70
70
70
65
65
65
60
60
60
70
70
70
60
60
60
MIN
MAX
60
60
60
55
55
55
55
55
55
50
50
50
50
50
50
45
45
45
45
45
45
40
40
40
45
45
45
40
40
40
10
25
30
20
25
30
15
20
30
15
20
25
15
20
25
15
20
45
15
15
20
10
15
20
20
20
20
15
15
30
10
15
20
10
15
15
10
10
15
10
10
15
10
10
15
10
10
25
10
10
15
10
10
10
10
10
10
10
10
25
Note: Off-state capacitance (C ) is measured at 1 MHz with a 2 V bias.
O
www.littelfuse.com
3 - 32
© 2006 Littelfuse • Telecom Design Guide
Balanced Three-chip SIDACtor® Device
+I
tr = rise time to peak value
td = decay time to half value
IT
Peak
Value
100
50
0
IS
IH
Waveform = tr x td
IDRM
-V
+V
Half Value
VDRM
VT
VS
tr
td
0
t – Time (µs)
-I
V-I Characteristics
t x t Pulse Waveform
r d
14
12
10
8
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
6
4
25 ˚C
25 ˚C
2
0
-4
-6
-40 -20
0
20 40 60 80 100 120 140 160
-8
Case Temperature (TC) – ˚C
-40 -20
0
20 40 60 80 100 120 140 160
Junction Temperature (TJ) – ˚C
Normalized V Change versus Junction Temperature
S
Normalized DC Holding Current versus Case Temperature
Telecom Design Guide • © 2006 Littelfuse
3 - 33
www.littelfuse.com
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