CR3500SC
更新时间：2024-09-18 02:06:35
品牌：LITTELFUSE
描述：The CR range of protectors are based on the proven technology of the T10 thyristor product
概述
规格参数
数据手册
替代型号CR3500SC 概述
The CR range of protectors are based on the proven technology of the T10 thyristor product 保护的CR系列是基于T10晶闸管产品的成熟技术 硅浪涌保护器
CR3500SC 规格参数
| 生命周期： | Transferred | 包装说明： | SMALL OUTLINE, R-PDSO-C2 |
| Reach Compliance Code： | unknown | HTS代码： | 8541.30.00.80 |
| 风险等级： | 5.44 | Is Samacsys： | N |
| 最大转折电压： | 400 V | 配置： | SINGLE |
| 最大断态直流电压： | 320 V | JEDEC-95代码： | DO-214AA |
| JESD-30 代码： | R-PDSO-C2 | 通态非重复峰值电流： | 60 A |
| 元件数量： | 1 | 端子数量： | 2 |
| 封装主体材料： | PLASTIC/EPOXY | 封装形状： | RECTANGULAR |
| 封装形式： | SMALL OUTLINE | 认证状态： | Not Qualified |
| 表面贴装： | YES | 端子形式： | C BEND |
| 端子位置： | DUAL | 触发设备类型： | SILICON SURGE PROTECTOR |
| Base Number Matches： | 1 |
CR3500SC 数据手册
通过下载CR3500SC数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。
PDF下载CRxxxx series
devices is dissipated power (V x I).
Description
The CR range of protectors are based on the proven
technology of the T10 thyristor product. Designed for
transient voltage protection of telecommunications
equipment, it provides higher power handling than a
conventional avalanche diode (TVS) and when compared to
a GDT offers lower voltage clamping levels and infinite surge
life.
Packaged in a transfer molded DO-214AA surface mount
outline designed for high speed pick & place machines used
in today’s surface mount assembly lines.
Resetting of the device to the non conducting state is
controlled by the current flowing through the device. When
the current falls below a certain value, known as the Holding
Current (Ih), the device resets automatically.
As with the avalanche T.V.S. device, if the CRXXXX is
subjected to a surge current which is beyond its maximum
rating, then the device will fail in short circuit mode, this
ensures that the equipment is ultimately protected.
Selecting A CRXXXX
Electrical Charecteristics
1. When selecting a CRXXXX device, it is important that the
Vrm of the device is equal to or greater than the operating
voltage of the system.
2. The minimum Holding Current (Ih) must be greater than
the current the system is capable of delivering otherwise the
device will remain conducting following a transient condition.
The electrical characteristics of a CRXXXX device is similar
to that of a self gated Triac, but the CR is a two terminal
device with no gate. The gate function is achieved by an
internal current controlled mechanism.
Like the T.T.S. diodes, the CRXXXX has a standoff voltage
(Vrm) which should be equal to or greater than the operating
voltage of the system to be protected. At this voltage (Vrm)
the current consumption of the CRXXXX is negligible and will
not effect the protected system.
IT
When a transient occurs, the voltage across the CRXXXX
will increase until the breakdown voltage (Vbr) is reached. At
this point the device will operate in a similar way to a T.V.S.
device and is in an avalanche mode.
IH
VT
IBO
IRM
VBR
The voltage of the transient will now be limited and will only
increase by a few volts as the device diverts more current.
As this transient current rises, a level of current through the
device is reached (Ibo) which causes the device to switch to
a fully conductive state such that the voltage across the
device is now only a few volts (Vt). The voltage at which the
device switches from the avalanche mode to the fully
conductive state (Vt) is known as the Breakover Voltage
(Vbo). When the device is in the Vt state, high currents can
be deverted without damage to the CRXXXX due to the low
voltage across the device, since the limiting factor in such
VRM
VBO
MIN
V-I Graph
Illustrating Symbols
and Terms for
the CR Surge
Protection Device.
The CRXXXX Range Can Be Used to Protect Against Surges As Defined In The Following International Standards.
SA
SB
SC
FCC Rules Part 68/D
Bellcore Specification
Metallic
Longitudinal
10/560µs
10/160µs
50A
100A
100A
150A
100A
200A
TR-NWT-001089
10/1000µs
2/10µs
100v/µs
37A
-
1KV
75A
-
1KV
100A
500A
1KV
ITU K-17 (Formerly CCITT)
VDE 0433
Voltage Wave Form
Current Wave Form
100/700µs
5/310µs
-
-
1.5KV
38A
1.5KV
38A
Voltage Wave Form
Current Wave Form
10/700µs
5/310µs
-
-
2KV
50A
4.0KV
100A
C-NET 131-24
Voltage Wave From
Current Wave Form
0.5/700µs
0.8/310µs
1.0KV
25A
1.0KV
25A
4.0KV
100A
IEC 1000-4-5
(Discharge through 2Ω impendance) I
Voltage Wave Form
8/20µs
1-2/50µs
-
-
100A
300V
250A
500V
ITU K-20
(Formerly CCITT)
Voltage Wave Form
Current Wave Form
10/700µs
5/310µs
1000V
25A
10000V
25A
4000V
100A
www. lit t elf us e. c om
52
CRxxxx series
Specifications
Electrical Charecteristics (Tj=25°C)
SYMBOL PARAMETER
SYMBOL PARAMETER
VRM
VBR
VBO
VT
Stand-off Coltage
Breakdown Voltage
Breakover Voltage
On-State Voltage
IRM
IBO
IH
Stand-off Current
Breakover Current
Holding Current
THERMAL DATA
VALUE
-40 to +150
150
UNIT
°C
°C
T stg
Tj
Storage and Operating Junction Temperature range
TL
Maximum Temperature For Soldering
(For period of 10 seconds max)
230
°C
Stock
Number
Device Reverse
Maximum Maximum Maximum Minimum Maximum
Typical
Capacitance
@1MHz 2v bias
pF
Code
Stand-off
Voltage
Reverse Breakover Breakover
Holding
Current
mA
On-State
Voltage
@1A
Leakage
µA
Voltage
@Ibo
Current
mA
MAXIMUM RATINGS
CR 0300 SA
CR 0640 SA
CR 0720 SA
CR 0800 SA
CR 1100 SA
CR 1300 SA
CR 1500 SA
CR 1800 SA
030A
064A
072A
080A
110A
130A
150A
180A
25
58
65
75
90
120
140
160
5
5
5
5
5
5
5
5
40
77
88
800
800
800
800
800
800
800
800
150
150
150
150
150
150
150
150
5
5
5
5
5
5
5
5
100
60
60
60
60
40
40
40
SUFFIX
SA
Ipp 10x160µs Amps 100
98
Ipp 10x560µs Amps
ITSM 60Hz Amps
DI/dt Amps/µs
50
20
130
160
180
220
500
CR 2300 SA
CR 2600 SA
CR 3100 SA
CR 3500 SA
CR 0300 SB
CR 0640 SB
CR 0720 SB
CR 0800 SB
CR 1100 SB
CR 1300 SB
CR 1500 SB
CR 1800 SB
CR 2300 SB
CR 2600 SB
CR 3100 SB
CR 3500 SB
230A
260A
310A
350A
030B
064B
072B
080B
110B
130B
150B
180B
230B
260B
310B
350B
190
220
275
320
25
58
65
75
90
120
140
160
190
220
275
320
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
260
300
350
400
40
77
88
98
130
160
180
220
260
300
350
400
800
800
800
800
800
800
800
800
800
800
800
800
800
800
800
800
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
30
30
30
30
100
60
60
60
60
40
40
40
30
30
30
30
MAXIMUM RATINGS
SUFFIX
SB
Ipp 10x160µs Amps 150
Ipp 10x560µs Amps 100
ITSM 60Hz Amps
DI/dt Amps/µs
30
500
CR 0300 SC 030C
CR 0640 SC 064C
CR 0720 SC 072C
CR 0800 SC 080C
CR 1100 SC 110C
CR 1300 SC 130C
CR 1500 SC 150C
CR 1800 SC 180C
CR 2300 SC 230C
CR 2600 SC 260C
CR 3100 SC 310C
CR 3500 SC 350C
25
58
65
75
90
120
140
160
190
220
275
320
5
5
5
5
5
5
5
5
5
5
5
5
40
77
88
800
800
800
800
800
800
800
800
800
800
800
800
150
150
150
150
150
150
150
150
150
150
150
150
5
5
5
5
5
5
5
5
5
5
5
5
200
120
120
120
120
80
80
80
60
60
MAXIMUM RATINGS
SUFFIX
SC
Ipp 2x10µs Amps
500
98
Ipp 10x160µs Amps 200
Ipp 10x560µs Amps 100
130
160
180
220
260
300
350
400
ITSM 60Hz Amps
dI/dt Amps/µs
60
500
60
60
www. lit t elf us e. c om
53
CRxxxx series
°
CRXXXXSB
CRXXXXSC
CRXXXXSA
°
PULSE WAVE FORM (10/10000µS)
tr
100
t2
90
tr = 1.25 x (t2 - t1) = 10µs
50
10
td = 1000µs
t1
1
2
3
4
t - Time - m S e c
°
PEAK SURGE ON-STATE CURRENT
VS. SURGE CURRENT DURATION
100
80
60
50
40
30
CRXXXXSB
CRXXXXSC
20
10
8
6
CRXXXXSA
5
4
3
2
1
1
2
3
4
5
10
20 30 40 50
100
200 300
SINUSOIDAL
1000
Surge Current Duration - full cycles @ 60H
Z
10x160µs PULSE WAVE FORM
10x560µs PULSE WAVE FORM
TEST WAVEFORM
PARAMETER
TEST WAVEFORM
PARAMETER
t = 10 sec
t = 10 sec
t = 560 sec
d
Peak Value - Ipp
Peak Value - Ipp
r
r
t
= 160 sec
d
Ipp
2
Ipp
2
t
t
Half Value =
= d
Half Value =
= d
10x160 Waveform
10x560 Waveform
0
80 160 240 320 400 480
t - Time - Sec
0
280 560 840 1,120 1,400 1,680
t - Time - Sec
www. lit t elf us e. c om
54
CR3500SC 替代型号
| 型号 | 制造商 | 描述 | 替代类型 | 文档 |
| TB3500H-13-F | DIODES | 100A BI-DIRECTIONAL SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE | 功能相似 |
|
| NP3500SCT3G | ONSEMI | Thyristor Surge Protectors High Voltage Bidirectional | 功能相似 |
|
| MMT10B350T3G | ONSEMI | Thyristor Surge Protectors High Voltage Bidirectional TSPD | 功能相似 |
|
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