DLA40IM800PC [LITTELFUSE]

Rectifier Diode, 1 Phase, 1 Element, 40A, 800V V(RRM), Silicon, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3;


型号：	DLA40IM800PC
厂家：	LITTELFUSE
描述：	Rectifier Diode, 1 Phase, 1 Element, 40A, 800V V(RRM), Silicon, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3 功效二极管
文件：	总5页 (文件大小：136K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

DLA40IM800PC

V_RRM

I_FAV

V_F

800V

40A

High Efficiency Standard Rectifier

1.26V

Single Diode

Part number

DLA40IM800PC

Backside: cathode

2/4

TO-263 (D2Pak)

Features / Advantages:

Applications:

Package:

● Planar passivated chips

● Diode for main rectification

● For single and three phase

bridge configurations

● Industry standard outline

● RoHS compliant

● Epoxy meets UL 94V-0

● Very low leakage current

● Very low forward voltage drop

● Improved thermal behaviour

IXYS reserves the right to change limits, conditions and dimensions.

Data according to IEC 60747and per semiconductor unless otherwise specified

20130116a

DLA40IM800PC

Ratings

Rectifier

Conditions

Symbol

V_RSM

Definition

min. typ. max. Unit

T_VJ= 25°C

T_VJ= 150°C

T_VJ= 25°C

900

800

max. non-repetitive reverse blocking voltage

max. repetitive reverse blocking voltage

V_RRM

I_R

reverse current, drain current

V_R= 800 V

µA

0.05 mA

forward voltage drop

V_F

1.30

1.56

1.26

1.65

I_F=

I_F= 80 A

I_F= 40 A

I_F= 80 A

T_C= 120°C

rectangular

T_VJ

°C

150

average forward current

threshold voltage

T_VJ= 175°C

I_FAV

V_F0

0.85

for power loss calculation only

slope resistance

r_F

10 mΩ

0.8 K/W

K/W

thermal resistance junction to case

thermal resistance case to heatsink

R_thJC

R_thCH

P_tot

0.25

T_C= 25°C

T_VJ= 45°C

V_R= 0 V

185

300

325

255

275

total power dissipation

max. forward surge current

I_FSM

t = 10 ms; (50 Hz), sine

t = 8,3 ms; (60 Hz), sine

t = 10 ms; (50 Hz), sine

t = 8,3 ms; (60 Hz), sine

t = 10 ms; (50 Hz), sine

t = 8,3 ms; (60 Hz), sine

t = 10 ms; (50 Hz), sine

t = 8,3 ms; (60 Hz), sine

V_R= 400 V f = 1 MHz

T_VJ= 150°C

V_R= 0 V

value for fusing

I²t

T_VJ= 45°C

V_R= 0 V

450 A²s

440 A²s

325 A²s

315 A²s

T_VJ= 150°C

V_R= 0 V

junction capacitance

C_J

T_VJ= 25°C

IXYS reserves the right to change limits, conditions and dimensions.

Data according to IEC 60747and per semiconductor unless otherwise specified

20130116a

DLA40IM800PC

Ratings

Package TO-263 (D2Pak)

Symbol

I_RMS

Definition

Conditions

per terminal

min. typ. max.

150

Unit

°C

RMS current

T_stg

-55

storage temperature

virtual junction temperature

175

T_VJ

Weight

F_C

mounting force with clip

I_RMSis typically limited by the pin-to-chip resistance (1); or by the current capability of the chip (2). In case of (1) and a product

with multiple pins for one chip-potential, the current capability can be increased by connecting the pins as one contact.

Part number

Product Marking

D = Diode

L = High Efficiency Standard Rectifier

A = (up to 1200V)

Part No.

Logo

XXXXXXXXX

40 = Current Rating [A]

IM = Single Diode

IXYS ^yywwz

800 = Reverse Voltage [V]

PC = TO-263AB (D2Pak) (2)

Date Code

Assembly Line

000000

Assembly Code

Ordering

Standard

Part Number

Marking on Product

DLA40IM800PC

Delivery Mode

Tape & Reel

Quantity Code No.

800 509995

DLA40IM800PC

Similar Part

Package

Voltage class

DSI30-08AS

TO-263AB (D2Pak) (2)

800

1200

1600

DSI30-12AS

DSI30-16AS

T_VJ= 175°C

* on die level

Equivalent Circuits for Simulation

Rectifier

V₀

R₀

threshold voltage

slope resistance *

V_{0 max}

R_{0 max}

0.85

6.8

mΩ

IXYS reserves the right to change limits, conditions and dimensions.

Data according to IEC 60747and per semiconductor unless otherwise specified

20130116a

DLA40IM800PC

Outlines TO-263 (D2Pak)

Millimeter

Inches

min max

Dim.

min

max

4.83

4.06

0.160 0.190

typ. 0.004

typ. 0.10

2.41

0.095

Supplier

Option

0.51

0.99

1.40

0.74

1.40

9.40

8.89

0.020 0.039

0.045 0.055

0.016 0.029

0.045 0.055

0.330 0.370

0.315 0.350

0.098

b2 1.14

0.40

1.14

8.38

D1 8.00

2.5

1 2 3

9.65

10.41 0.380 0.410

E1 6.22

8.50

2,54 BSC

4.28

0.245 0.335

0,100 BSC

0.169

14.61 15.88 0.575 0.625

2x e

3x b2

mm (Inches)

2x b

1.78

2.79

1.68

0.070 0.110

0.040 0.066

10.92

(0.430)

L1 1.02

typ.

0.040

0.002

0.0008

0.02

All dimensions conform with

and/or within JEDEC standard.

1.78

(0.07)

2.54 (0.100)

Recommended min. foot print

2/4

IXYS reserves the right to change limits, conditions and dimensions.

Data according to IEC 60747and per semiconductor unless otherwise specified

20130116a

DLA40IM800PC

Rectifier

10³

260

240

220

200

180

160

140

120

V_R= 0 V

50 Hz, 80% V_RRM

I_FSM

[A]

I_F

I²t

[A²s]

10²

T_VJ= 45°C

T_VJ= 150°C

T_VJ= 125°C

T_VJ25°C

[A]

T_VJ= 150°C

0.5

1.0

V_F[V]

1.5

0.001

0.01

0.1

4 5 6 7 8 910

t [s]

Fig. 2 Surge overload current

t [ms]

Fig. 3 I²t versus time

Fig. 1 Forward current versus

voltage drop

R_thHA

DC =

0.5

0.6 K/W

0.8 K/W

1.0 K/W

2.0 K/W

4.0 K/W

8.0 K/W

0.4

DC =

0.5

0.33

0.17

0.08

I_F(AV)M

[A]

P_tot

0.4

0.33

0.17

0.08

[W]

25 50 75 100 125 150 175 200

100

150

200

I_F(AV)M[A]

T_amb[°C]

T_C[°C]

Fig. 5 Max. forward current vs.

case temperature

Fig. 4 Power dissipation versus direct output current and ambient temperature

1.0

0.8

Constants for Z_thJCcalculation:

Z_thJC

R_thi(K/W)

t_i(s)

0.04

0.07

0.19

0.35

0.15

0.0004

0.002

0.003

0.024

0.25

0.6

[K/W]

0.4

0.2

100

1000

10000

t [ms]

Fig. 6 Transient thermal impedance junction to case

IXYS reserves the right to change limits, conditions and dimensions.

Data according to IEC 60747and per semiconductor unless otherwise specified

20130116a

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