DLA5P800UC [LITTELFUSE]

Rectifier Diode, 1 Phase, 2 Element, 5A, 800V V(RRM), Silicon, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3/2;
DLA5P800UC
型号: DLA5P800UC
厂家: LITTELFUSE    LITTELFUSE
描述:

Rectifier Diode, 1 Phase, 2 Element, 5A, 800V V(RRM), Silicon, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3/2

功效 二极管
文件: 总5页 (文件大小:211K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
DLA5P800UC  
=
VRRM  
2x 800V  
5A  
High Efficiency Standard Rectifier  
=
IFAV  
VF  
=
1.12V  
Phase leg  
Part number  
DLA5P800UC  
Marking on Product: M5RLUP  
Backside: anode/cathode  
1
2/4  
3
TO-252 (DPak)  
Features / Advantages:  
Applications:  
Package:  
Planar passivated chips  
Diode for main rectification  
For single and three phase  
bridge configurations  
Industry standard outline  
RoHS compliant  
Epoxy meets UL 94V-0  
Very low leakage current  
Very low forward voltage drop  
Improved thermal behaviour  
Terms Conditions of usage:  
The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and  
the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The  
information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns  
the specific application of your product, please contact the sales office, which is responsible for you.  
Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact the sales office, which is responsible for you.  
Should you intend to use the product in aviation, in health or live endangering or life support applications, please notify. For any such application we urgently recommend  
- to perform joint risk and quality assessments;  
- the conclusion of quality agreements;  
- to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures.  
IXYS reserves the right to change limits, conditions and dimensions.  
Data according to IEC 60747and per semiconductor unless otherwise specified  
20160803b  
© 2016 IXYS all rights reserved  
DLA5P800UC  
Ratings  
Rectifier  
Symbol  
VRSM  
Definition  
Conditions  
min. typ. max. Unit  
TVJ = 25°C  
TVJ = 25°C  
TVJ = 25°C  
TVJ = 150°C  
TVJ = 25°C  
900  
800  
5
V
V
max. non-repetitive reverse blocking voltage  
max. repetitive reverse blocking voltage  
VRRM  
IR  
reverse current  
VR = 800 V  
VR = 800 V  
IF = 5 A  
IF = 10 A  
IF = 5 A  
µA  
0.05 mA  
forward voltage drop  
1.18  
1.38  
1.12  
1.41  
5
V
V
V
V
A
VF  
TVJ  
=
°C  
150  
IF = 10 A  
TC = 155°C  
180° sine  
average forward current  
threshold voltage  
TVJ = 175°C  
TVJ = 175°C  
IFAV  
0.82  
V
VF0  
for power loss calculation only  
slope resistance  
58 m  
2.5 K/W  
K/W  
rF  
thermal resistance junction to case  
thermal resistance case to heatsink  
RthJC  
RthCH  
Ptot  
0.5  
TC = 25°C  
TVJ = 45°C  
VR = 0 V  
60  
70  
76  
60  
64  
W
A
A
A
A
total power dissipation  
max. forward surge current  
t = 10 ms; (50 Hz), sine  
t = 8,3 ms; (60 Hz), sine  
t = 10 ms; (50 Hz), sine  
t = 8,3 ms; (60 Hz), sine  
t = 10 ms; (50 Hz), sine  
t = 8,3 ms; (60 Hz), sine  
t = 10 ms; (50 Hz), sine  
t = 8,3 ms; (60 Hz), sine  
VR = 400 V; f = 1 MHz  
IFSM  
TVJ = 150°C  
VR = 0 V  
value for fusing  
TVJ = 45°C  
VR = 0 V  
I²t  
25 A²s  
24 A²s  
18 A²s  
17 A²s  
pF  
TVJ = 150°C  
VR = 0 V  
TVJ = 25°C  
1
CJ  
junction capacitance  
IXYS reserves the right to change limits, conditions and dimensions.  
Data according to IEC 60747and per semiconductor unless otherwise specified  
20160803b  
© 2016 IXYS all rights reserved  
DLA5P800UC  
Ratings  
Package TO-252 (DPak)  
Symbol  
IRMS  
Definition  
Conditions  
min. typ. max. Unit  
per terminal  
20  
175  
150  
150  
A
°C  
°C  
°C  
g
RMS current  
-55  
-55  
-55  
TVJ  
virtual junction temperature  
Top  
operation temperature  
storage temperature  
Tstg  
0.3  
Weight  
20  
60  
N
FC  
mounting force with clip  
Product Marking  
Part description  
D = Diode  
L = High Efficiency Standard Rectifier  
A = (up to 1200V)  
Logo  
IXYS  
5 = Current Rating [A]  
P = Phase leg  
Part number  
800 = Reverse Voltage [V]  
UC = TO-252AA (DPak)  
abcdefg  
Assembly Line  
Date Code  
Z YY  
WW  
Ordering  
Standard  
Ordering Number  
Marking on Product  
M5RLUP  
Delivery Mode  
Quantity Code No.  
2500 511574  
DLA5P800UC  
Tape & Reel  
TVJ = 175°C  
Equivalent Circuits for Simulation  
* on die level  
Rectifier  
V0  
I
R0  
threshold voltage  
slope resistance *  
0.82  
55  
V
V0 max  
R0 max  
mΩ  
IXYS reserves the right to change limits, conditions and dimensions.  
Data according to IEC 60747and per semiconductor unless otherwise specified  
20160803b  
© 2016 IXYS all rights reserved  
DLA5P800UC  
Outlines TO-252 (DPak)  
1
2/4  
3
IXYS reserves the right to change limits, conditions and dimensions.  
Data according to IEC 60747and per semiconductor unless otherwise specified  
20160803b  
© 2016 IXYS all rights reserved  
DLA5P800UC  
Rectifier  
10  
60  
50  
40  
30  
20  
30  
20  
VR = 0 V  
8
TVJ = 45°C  
I2t  
6
IFSM  
[A]  
TVJ = 45°C  
IF  
[A2s]  
10  
TVJ = 150°C  
4
2
0
TVJ = 150°C  
TVJ = 125°C  
TVJ = 150°C  
[A]  
TVJ  
= 25°C  
50 Hz, 80% VRRM  
0
0.5  
1.0  
1.5  
0.001  
0.01  
0.1  
1
1
2
3
4 5 6 7 8 10  
VF [V]  
t [s]  
Fig. 2 Surge overload current  
t [ms]  
Fig. 3 I2t versus time  
Fig. 1 Forward current versus  
voltage drop  
8
6
4
2
0
DC =  
1
20  
15  
10  
5
0.5  
DC =  
1
0.4  
0.33  
0.17  
0.08  
RthHA  
=
0.5  
0.4  
2.0 K/W  
4.0 K/W  
6.0 K/W  
IF(AV)M  
Ptot  
0.33  
0.17  
0.08  
10.0 K/W  
12.0 K/W  
14.0 K/W  
[A]  
[W]  
0
0
2
4
6
0
25 50 75 100 125 150 175 200  
0
50  
100  
150  
200  
TC [°C]  
IF(AV)M [A]  
Tamb [°C]  
Fig. 5 Max. forward current vs.  
case temperature  
Fig. 4 Power dissipation versus direct output current and ambient temperature  
3.0  
2.5  
Constants for ZthJC calculation:  
2.0  
i
Rthi (K/W)  
ti (s)  
ZthJC  
1
2
3
4
5
1.1  
0.005  
0.0003  
0.045  
0.2  
1.5  
0.06  
0.2  
[K/W]  
1.0  
0.5  
0.0  
0.4  
0.74  
0.05  
1
10  
100  
1000  
10000  
t [ms]  
Fig. 6 Transient thermal impedance junction to case  
IXYS reserves the right to change limits, conditions and dimensions.  
Data according to IEC 60747and per semiconductor unless otherwise specified  
20160803b  
© 2016 IXYS all rights reserved  

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