DMA30E1800HA [LITTELFUSE]

Rectifier Diode, 1 Phase, 1 Element, 30A, 1800V V(RRM), Silicon, TO-247AD, 2 PIN;


型号：	DMA30E1800HA
厂家：	LITTELFUSE
描述：	Rectifier Diode, 1 Phase, 1 Element, 30A, 1800V V(RRM), Silicon, TO-247AD, 2 PIN 局域网二极管
文件：	总5页 (文件大小：329K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

DMA30E1800HA

V_RRM

I_FAV

V_F

1800V

30A

Standard Rectifier

1.22V

Single Diode

Part number

DMA30E1800HA

Backside: anode

TO-247

Features / Advantages:

Applications:

Package:

● Planar passivated chips

● Diode for main rectification

● For single and three phase

bridge configurations

● Industry standard outline

● RoHS compliant

● Epoxy meets UL 94V-0

● Very low leakage current

● Very low forward voltage drop

● Improved thermal behaviour

Disclaimer Notice

Information furnished is believed to be accurate and reliable. However, users should independently

evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,

www.littelfuse.com/disclaimer-electronics.

and may not be used in, all applications. Read complete Disclaimer Notice at

IXYS reserves the right to change limits, conditions and dimensions.

Data according to IEC 60747and per semiconductor unless otherwise specified

20191129c

DMA30E1800HA

Ratings

Rectifier

Symbol

V_RSM

Definition

Conditions

min. typ. max. Unit

T_VJ= 25°C

T_VJ= 150°C

T_VJ= 25°C

1900

1800

max. non-repetitive reverse blocking voltage

max. repetitive reverse blocking voltage

V_RRM

I_R

reverse current

V_R=1800 V

µA

V_R=1800 V

I_F= 30 A

I_F= 60 A

I_F= 30 A

I_F= 60 A

T_C= 140°C

rectangular

1.5 mA

forward voltage drop

1.25

V_F

1.50

1.22

1.59

T_VJ

°C

150

average forward current

threshold voltage

T_VJ= 175°C

I_FAV

d = 0.5

0.83

V_F0

for power loss calculation only

slope resistance

12.8 mΩ

0.7 K/W

K/W

r_F

thermal resistance junction to case

thermal resistance case to heatsink

R_thJC

R_thCH

P_tot

0.3

T_C= 25°C

T_VJ= 45°C

V_R= 0 V

210

370

400

315

340

total power dissipation

max. forward surge current

t = 10 ms; (50 Hz), sine

t = 8,3 ms; (60 Hz), sine

t = 10 ms; (50 Hz), sine

t = 8,3 ms; (60 Hz), sine

t = 10 ms; (50 Hz), sine

t = 8,3 ms; (60 Hz), sine

t = 10 ms; (50 Hz), sine

t = 8,3 ms; (60 Hz), sine

V_R= 400 V; f = 1 MHz

I_FSM

T_VJ= 150°C

V_R= 0 V

value for fusing

T_VJ= 45°C

V_R= 0 V

I²t

685 A²s

665 A²s

495 A²s

480 A²s

T_VJ= 150°C

V_R= 0 V

T_VJ= 25°C

C_J

junction capacitance

IXYS reserves the right to change limits, conditions and dimensions.

Data according to IEC 60747and per semiconductor unless otherwise specified

20191129c

DMA30E1800HA

Ratings

Package TO-247

Symbol

I_RMS

Definition

Conditions

min. typ. max. Unit

per terminal

175

150

°C

RMS current

-55

T_VJ

virtual junction temperature

T_op

operation temperature

storage temperature

T_stg

Weight

0.8

1.2 Nm

120

M_D

mounting torque

mounting force with clip

Product Marking

Part description

D = Diode

M = Standard Rectifier

A = (up to 1800V)

30 = Current Rating [A]

E = Single Diode

1800 = Reverse Voltage [V]

HA = TO-247AD (2)

Logo

IXYS

XXXXXXXXX

yywwZ

Part Number

Date Code

1234

Lot#

Location

Ordering

Ordering Number

DMA30E1800HA

Marking on Product

DMA30E1800HA

Delivery Mode

Quantity Code No.

30 455156

Standard

Tube

T_VJ=175°C

Equivalent Circuits for Simulation

* on die level

Rectifier

V₀

R₀

threshold voltage

slope resistance *

0.83

10.2

V_{0 max}

R_{0 max}

mΩ

IXYS reserves the right to change limits, conditions and dimensions.

Data according to IEC 60747and per semiconductor unless otherwise specified

20191129c

DMA30E1800HA

Outlines TO-247

Sym.

Inches

min. max.

Millimeter

min.

4.70

2.21

1.50

max.

0.185 0.209

0.087 0.102

0.059 0.098

0.819 0.845

0.610 0.640

0.170 0.216

0.430 BSC

5.30

2.59

2.49

20.79 21.45

15.48 16.24

4.31

5.48

2x E2

10.92 BSC

0.780 0.800

19.80 20.30

Ø P

0.177

4.49

3.65

6.19

0.140 0.144

0.212 0.244

0.242 BSC

3.55

5.38

6.14 BSC

0.039 0.055

0.065 0.094

0.102 0.135

0.015 0.035

0.99

1.65

2.59

0.38

13.07

0.51

13.45

1.40

2.39

3.43

0.89

Ø P1

0.515

0.020 0.053

1.35

2x b2

0.530

0.29

7.39

IXYS reserves the right to change limits, conditions and dimensions.

Data according to IEC 60747and per semiconductor unless otherwise specified

20191129c

DMA30E1800HA

Rectifier

300

250

10³

V_R= 0 V

50 Hz, 80% V_RRM

T_VJ= 45°C

I²t

I_F

I_FSM

T_VJ= 45°C

[A²s]

[A]

T_VJ= 150°C

200

T_VJ= 150°C

T_VJ= 125°C

T_VJ

25°C

150

10²

0.5

1.0

V_F[V]

1.5

0.001

0.01

0.1

4 5 6 7 8 910

t [s]

Fig. 2 Surge overload current

t [ms]

Fig. 3 I²t versus time per diode

Fig. 1 Forward current versus

voltage drop per diode

dc =

0.5

0.4

0.33

0.17

0.08

R_thKA

0.6 K/W

0.8 K/W

1.0 K/W

2.0 K/W

4.0 K/W

8.0 K/W

dc =

0.5

0.4

0.33

0.17

0.08

I_F(AV)M

P_tot

[W]

[A]

10 15 20 25 30 35

I_F(AV)M[A]

25 50 75 100 125 150 175 200

T_amb[°C]

T_C[°C]

Fig. 4 Power dissipation versus direct output current and ambient temperature

Fig. 5 Max. forward current versus

case temperature

0.8

0.6

Z_thJC

0.4

Constants for Z_thJCcalculation:

R_thi(K/W)

t_i(s)

0.03

0.0003

0.0065

0.027

0.105

0.8

0.072

0.131

0.367

[K/W]

0.2

5 0.1

0.0

100

1000

10000

t [ms]

Fig. 6 Transient thermal impedance junction to case

IXYS reserves the right to change limits, conditions and dimensions.

Data according to IEC 60747and per semiconductor unless otherwise specified

20191129c

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