FII40-06D [LITTELFUSE]
Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, ISOPLUS, I4PAC-5;
| 型号： | FII40-06D |
| 厂家： | 
LITTELFUSE |
| 描述： | Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, ISOPLUS, I4PAC-5 栅 功率控制 晶体管 |
| 文件： | 总4页 (文件大小：264K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
FII 40-06D
IC25
VCES
= 40 A
= 600 V
IGBT phaseleg
in ISOPLUS i4-PAC™
VCE(sat) typ. = 1.8 V
3
5
4
1
2
E72873
Features
IGBT
• NPT IGBT technology
- low saturation voltage
- positive temperature coefficient for
easy paralleling
- fast switching
• HiPerFRED™ diode
- optimized fast and soft reverse
recovery
- low operating forward voltage
- low leakage current
• ISOPLUS i4-PAC™ package
- isolated back surface
- low coupling capacity between pins
and heatsink
- enlarged creepage towards heatsink
- application friendly pinout
- low inductive current path
- high reliability
Symbol
VCES
Conditions
Maximum Ratings
TVJ = 25°C to 150°C
600
20
V
VGES
V
IC25
IC90
TC = 25°C
TC = 90°C
40
25
A
A
±
ICM
VCEK
VGE = 15 V; RG = 33 Ω; TVJ = 125°C
60
VCES
A
µs
W
RBSOA Clamped inductive load; L = 100 µH
±
tSC
VCE = VCES; VGE = 15 V; RG = 33 Ω
10
(SCSOA) TVJ = 125°C; non-repetitive
Ptot
TC = 25°C
125
Symbol
Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
VCE(sat)
IC = 25 A; VGE = 15 V
TVJ = 25°C
TVJ = 125°C
1.8
2.0
2.2
V
V
- industry standard outline
- UL registered E 72873
VGE(th)
ICES
IC = 0.7 mA; VGE = VCE
VCE = VCES; VGE = 0 V
4.5
6.5
0.6
V
Applications
TVJ = 25°C
TVJ = 125°C
mA
mA
• single phaseleg
- buck-boost chopper
• H bridge
0.6
IGES
VCE = 0 V; VGE
=
20 V
200
nA
td(on)
tr
td(off)
tf
Eon
Eoff
50
50
270
40
1.2
0.8
ns
ns
ns
ns
mJ
mJ
- power supplies
- induction heating
- four quadrant DC drives
- controlled rectifier
• three phase bridge
- AC drives
Inductive load
TVJ = 125°C
VCE = 300 V; IC = 25 A
VGE = 15 V; RG = 33 Ω
- controlled rectifier
Cies
VCE = 25 V; VGE = 0 V; f = 1 MHz
VCE = 300 V; VGE = 15 V; IC = 30 A
1.6
95
nF
nC
QGon
RthJC
RthJH
1
K/W
K/W
with heatsink compound
2
IXYS reserves the right to change limits, test conditions and dimensions.
© 2011 IXYS All rights reserved
20110119a
1 - 4
FII 40-06D
Diode
Symbol
VRRM
Conditions
Maximum Ratings
TVJ = 25°C to 150°C
600
V
IF25
IF90
TC = 25°C
TC = 90°C
30
15
A
A
Symbol
VF
Conditions
Characteristic Values
min. typ. max.
IF = 25 A
TVJ = 25°C
VJ = 125°C
2.5
1.7
2.8
V
V
T
IRM
trr
IF = 15 A; diF/dt = -400 A/µs;
7
50
A
ns
VR = 300 V; VGE = 0 V;
TVJ = 125°C
RthJC
RthJH
(per diode)
with heatsink compound
2.3 K/W
K/W
4.6
Component
Symbol
Conditions
Maximum Ratings
TVJ
Tstg
operating
-55...+150
-55...+125
°C
°C
VISOL
FC
IISOL < 1 mA; 50/60 Hz; t = 1 s
Mounting force with clip
2500
V~
20...120
Nm
Symbol
CP
Conditions
Characteristic Values
min. typ. max.
coupling capacity between shorted
pins and mounting tab in the case
40
pF
dS, dA
dS, dA
pin - pin
pin - backside metal
1.7
5.5
mm
mm
Weight
6
g
MILLIMETER
INCHES
DIM.
MIN
4.83
2.59
1.17
1.14
1.47
2.54
0.51
20.80
14.99
1.65
19.56
16.76
MAX
5.21
MIN
MAX
0.205
0.118
0.085
0.055
0.068
0.110
0.029
0.840
0.620
0.080
0.799
0.690
A
0.190
0.102
0.046
0.045
0.058
0.100
0.020
0.819
0.590
0.065
0.770
0.660
A1
A2
b
3.00
A
2.16
A2
E
E1
1.40
b2
b4
C
1.73
2.79
0.74
D
21.34
15.75
2.03
D1
D2
E
20.29
17.53
E1
e
3.81 BSC
0.15 BSC
L
19.81
2.11
5.33
2.54
―
21.34
2.59
6.20
4.57
0.10
0.780
0.083
0.210
0.100
―
0.840
0.102
0.244
0.180
0.004
L1
Q
4x e
R
C
b2
1 2 3 4 5
W
A1
Die konvexe Form des Substrates ist typ. < 0.05 mm über
der Kunststoffoberfläche der Bauteilunterseite
The convex bow of substrate is typ. < 0.05 mm over plastic
surface level ofdevice bottom side
b
b4
W
IXYS reserves the right to change limits, test conditions and dimensions.
© 2011 IXYS All rights reserved
20110119a
2 - 4
FII 40-06D
90
90
A
A
IC
IC
VGE = 17 V
VGE= 17V
60
45
30
15
0
15 V
13 V
60
45
30
15
0
15V
13V
TJ = 25°C
11V
11V
TJ = 125°C
9V
9V
25T60
25T60
V
V
0
1
2
3
4
5
6
0
1
2
3
4
5
6
VCE
VCE
Fig. 1 Typ. output characteristics
Fig. 2 Typ. output characteristics
90
90
A
A
IF
VCE = 20V
IC
60
45
30
15
0
60
45
30
15
0
TJ = 125°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
25T60
25T60
V
0,0
0,5
1,0
1,5
2,0
4
6
8
10
12
V
14 16
VF
VGE
Fig. 3 Typ. transfer characteristics
Fig. 4 Typ. forward characteristics
of free wheeling diode
50
150
20
V
A
ns
trr
trr
15
IRM
VGE
30
20
10
0
90
60
30
0
10
5
TJ = 125°C
R = 300 V
IF = 30 A
VCE = 300 V
V
IC
= 30 A
IRM
25T60
25T60
0
nC
A/µs
0
200
400
600
-di/dt
1000
0
40
80
120
QG
160
Fig. 5 Typ. turn on gate charge
Fig. 6 Typ. turn off characteristics
of free wheeling diode
IXYS reserves the right to change limits, test conditions and dimensions.
© 2011 IXYS All rights reserved
20110119a
3 - 4
FII 40-06D
8
mJ
6
80
ns
60
2,0
mJ
1,5
400
Eoff
VCE = 300V
VGE 15V
RG = 33
TVJ = 125°C
=
ns
tr
Ω
300
t
Eoff
Eon
td(on)
t
VCE = 300V
VGE 15V
RG = 33
TVJ = 125°C
=
td(off)
Eon
Ω
4
2
0
40
20
0
1,0
0,5
0,0
200
100
tf
25T60
25T60
0
0
20
40
60 A
0
20
40
60
A
IC
IC
Fig. 7 Typ. turn on energy and switching
Fig. 8 Typ. turn off energy and switching times versus
collector current times versus collector current
4
mJ
3
80
ns
2,0
mJ
400
ns
td(on)
V
CE = 300V
VCE = 300 V
VGE 15 V
td(off)
VGE 15V
=
=
IC = 30A
IC = 30 A
TVJ = 125°C
Eoff
Eon
1,5
1,0
0,5
0,0
300
TVJ = 125°C
t
t
tr
60
40
20
Eoff
Eon
2
1
0
200
100
0
tf
25T60
25T60
0
10 20 30 40 50 60 70
RG
Ω
80
0
10 20 30 40 50 60 70
RG
Ω
80
Fig. 9 Typ. turn on energy and switching
Fig. 10 Typ. turn off energy and switching times versus
gate resistor times versus gate resistor
80
A
10
diode
K/W
1
60
ZthJC
IGBT
ICM
0,1
0,01
40
20
0
single pulse
0,001
RG = 33
Ω
T
VJ = 125°C
25T60
VDI...50-06P1
0,0001
0,000010,0001 0,001 0,01
0,1
1
10
s
0
100 200 300 400 500 600 700
VCE
V
t
Fig. 11 Reverse biased safe operating area
Fig. 12 Typ. transient thermal impedance RBSOA
IXYS reserves the right to change limits, test conditions and dimensions.
© 2011 IXYS All rights reserved
20110119a
4 - 4
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