HTZ120A44K [LITTELFUSE]

Rectifier Diode, 1 Phase, 2 Element, 2A, 44000V V(RRM), Silicon, ZA, 3 PIN;


型号：	HTZ120A44K
厂家：	LITTELFUSE
描述：	Rectifier Diode, 1 Phase, 2 Element, 2A, 44000V V(RRM), Silicon, ZA, 3 PIN 局域网高压二极管
文件：	总7页 (文件大小：691K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

HIGH VOLTAGE RECTIFIERS

January 2002

USA: IXYSCorporation

3540 Bassett Street · Santa Clara · CA 95054

EUROPE: IXYS Semiconductor GmbH

www.IXYS.com

Edisonstr. 15 · Lampertheim · Germany

Phone: +49.6206.503.0 · Fax: +49.6206.503.627

e-mail:marcom@ixys.de

1 - 7

Phone: (408) 982-0700 · FAX: (408) 496-0670

e-mail: sales@ixys.com

CONTENTS

January 2002

Introduction

Selection bar chart

High voltage diode assembly range

Dimensional outlines

HTZ110A Series

HTZ120A Series

HTZ130B Series

HTZ150C Series

HTZ160C Series

HTZ170C Series

HTZ180D Series

HTZ240F Series

HTZ250G Series

HTZ260G Series

HTZ270H Series

HTZ280H Series

EUROPE: IXYS Semiconductor GmbH

USA: IXYSCorporation

3540 Bassett Street · Santa Clara · CA 95054

www.IXYS.com

Edisonstr. 15 · Lampertheim · Germany

Phone: +49.6206.503.0 · Fax: +49.6206.503.627

e-mail:marcom@ixys.de

2 - 7

Phone: (408) 982-0700 · FAX: (408) 496-0670

e-mail: sales@ixys.com

Introduction

We have made every effort to ensure the accuracy of the information contained herein. In order to

continuously improve our products we reserve the right to amend this specification without notice.

We cannot accept responsibility for damage; injury, loss or expense as a result of information

provided, if in doubt please contact us. These products are designed for applications where high

voltage D.C. is required at moderate current levels. Applications include Broadcast, TV and Radar

transmitters, Electrostatic precipitators, RF heating, etc.

Theunitsusediscretediodesmountedstraightontoaglassfibrecircuitboardandthenencapsulated

in an epoxy resin, whilst the remaining types are manufactured in an open construction, with or

withoutheatsinks,andthushaveahighercurrentratingthanthemouldedtypes.Thebestratingfrom

these open construction types is when they are mounted horizontally in the air stream or, better still,

immersed in oil.

ThemouldedHTZassemblieshaveaflammabilityratingtoBS2011:Part2.1Pz:1970. Fortheopen

construction types, refer to the factory for information on flammability for specific types. The diodes

used in the construction of these HTZ assemblies have avalanche characteristics and high non-

repetitivepeaksurgecurrentwithstands.Theuseofdiodeswithavalanchecharacteristicseliminates

the need for sharing resistors and capacitors, normally required for voltage sharing associated with

series connected devices, and enables the string to absorb limited reverse voltage transients

without damage. The HTZ assemblies are primarily designed for mains frequency rectification, if

they are to be used for pulse or higher frequency applications then IXYS should be consulted.

For the reasons already given the HTZ assemblies may be connected in series for higher voltage

operation.However,forparalleloperationaderatingto80%ofthepublishedcurrentmustbeapplied

and IXYS consulted to ensure good current sharing will take place. It is normal practice to operate

the diodes with a 50% minimum safety factor on the Repetitive Peak Reverse Voltage, V_RRM, to take

into account any voltage transients that may occur. The Reverse Avalanche Voltage, V_(AB)R, is

measured at 1 mA and will not be less than that stated in the data sheet.

In some applications the diodes may feed directly into a reservoir capacitor, i.e. a capacitive load.

Under these conditions the RMS current should not exceed 1.6 x I_F(AV)at the appropriate operating

conditions. I_F(AV)is given on the front page of the data sheets and may be read from the Temperature

derating graphs using the single phase curve (10). For a general figure for peak/mean current ratios

up to 10:1, a derating to 80% of the rated half sinewave mean current I_F(AV)should be applied.

Continued over

USA: IXYSCorporation

3540 Bassett Street · Santa Clara · CA 95054

EUROPE: IXYS Semiconductor GmbH

Edisonstr. 15 · Lampertheim · Germany

www.IXYS.com

3 - 7

Phone: (408) 982-0700 · FAX: (408) 496-0670

e-mail: sales@ixys.com

Phone: +49.6206.503.0 · Fax: +49.6206.503.627

e-mail:marcom@ixys.de

Introduction - continued

January 2002

CIRCUIT CONNECTIONS

Single phase full wave bridge

Fig. 1: I_DC= 2x I_F_(AV)for resistive or inductive loads.

V_RRM= rated unit voltage.

Single phase full wave bridge

Fig. 2: I_DC= 2x I_F(_AV)for resistive or inductive loads.

V_RRM= half rated unit voltage.

Three phase full wave bridge

Fig. 3: I_DC= 3x I_F(AVfor resistive and inductive loads.

V_RRM= rated unit voltage.

Three phase full wave bridge

Fig. 4: I_DC= 3x I_F(AV)for resistive and inductive loads.

V_RRM= half rated unit voltage.

EUROPE: IXYS Semiconductor GmbH

Edisonstr. 15 · Lampertheim · Germany

USA: IXYSCorporation

3540 Bassett Street · Santa Clara · CA 95054

www.IXYS.com

4 - 7

Phone: +49.6206.503.0 · Fax: +49.6206.503.627

e-mail:marcom@ixys.de

Phone: (408) 982-0700 · FAX: (408) 496-0670

e-mail: sales@ixys.com

HIGH VOLTAGE RECTIFIERS

Selection Bar Chart

January 2002

14,5

10,0

4,7

4,6

3,5

3,4

3,0

2,7

2,0

1,7

1,4

1,3

1,0

0,8

0,7

HTZ

170C

HTZ

260G

HTZ 280H

HTZ

110A

HTZ 270H

HTZ 150C

HTZ 250G

HTZ 120A

HTZ

160C

HTZ

240F

HTZ 180D

HTZ 130B

2000

5000

10000 20000

50000

100000 200000

500000

V_RRM- V

USA: IXYSCorporation

EUROPE: IXYS Semiconductor GmbH

Edisonstr. 15 · Lampertheim · Germany

www.IXYS.com

5 - 7

3540 Bassett Street · Santa Clara · CA 95054

Phone: (408) 982-0700 · FAX: (408) 496-0670

e-mail: sales@ixys.com

Phone: +49.6206.503.0 · Fax: +49.6206.503.627

e-mail:marcom@ixys.de

HIGH VOLTAGE RECTIFIERS

Diode Assembly Range

January 2002

Repetitive

Peak Reverse

Voltage

Mean

Forward

Current

Ambient

Temperature

Non-repetitive

Peak Forward

Surge Current

-10ms

Maximum

Peak Reverse

Current at

Virtual

Junction

Temperature

Maximum

Peak Forward @ Forward

Voltage

Peak

Type No.

OUTLINE

Current

V_RRMmax Tvj

V_RRM

I_F(AV)

T_amb

°C

I_FSM

I_RM

T_vj

°C

V_FM

I_FM

HTZ110A16K

HTZ110A19K

HTZ110A22K

HTZ110A25K

16000

19000

22000

25000

3.5

2.0

1.0

3.0

200

100

0.5

150

18.3

HTZ120A32K

HTZ120A38K

HTZ120A44K

HTZ120A51K

32000

30000

44000

51000

36.8

24.0

6.0

HTZ130B24K

HTZ130B28K

HTZ130B33K

HTZ130B38K

24000

28000

33000

38000

2.0

HTZ150C6K

HTZ150C7K

HTZ150C8K

HTZ150C9K

6000

7200

8400

9600

HTZ160C12K

HTZ160C14K

HTZ160C17K

HTZ160C19K

12000

14400

16800

19200

1.7

100

0.5

150

12.0

1.9

2.0

HTZ170C2K

HTZ170C2.4K

HTZ170C3K

2000

2400

3000

10.0

1000

HTZ180D22K

HTZ180D26K

HTZ180D30K

HTZ180D35K

22000

26000

30000

35000

1.3

1.7

2.7

4.7

3.4

4.7

100

200

0.5

150

22.0

10.0

32.0

16.0

46.0

23.0

2.0

HTZ240F10K

HTZ240F12K

HTZ240F14K

HTZ240F16K

10000

12000

14000

16000

HTZ250G28K

HTZ250G33K

HTZ250G39K

HTZ250G44K

28000

33600

39200

44800

HTZ260G14K

HTZ260G16K

HTZ260G19K

HTZ260G22K

14000

16000

19000

22000

HTZ270H40K

HTZ270H48K

HTZ270H56K

HTZ270H64K

40000

48000

56000

64000

HTZ280H20K

HTZ280H24K

HTZ280H28K

HTZ280H32K

20000

24000

28000

32000

EUROPE: IXYS Semiconductor GmbH

Edisonstr. 15 · Lampertheim · Germany

USA: IXYSCorporation

www.IXYS.com

3540 Bassett Street · Santa Clara · CA 95054

Phone: (408) 982-0700 · FAX: (408) 496-0670

e-mail: sales@ixys.com

6 - 7

Phone: +49.6206.503.0 · Fax: +49.6206.503.627

e-mail:marcom@ixys.de

Dimensioned Outlines

Dimensions shown are maximum in mm

HTZ 110A, 120A

HTZ 130B

HTZ 180D, 190D

HTZ 270H, 280H

HTZ 150C, 160C, 170C

HTZ 240F

HTZ 250G, 260G

USA: IXYSCorporation

EUROPE: IXYS Semiconductor GmbH

www.IXYS.com

3540 Bassett Street · Santa Clara · CA 95054

Phone: (408) 982-0700 · FAX: (408) 496-0670

e-mail: sales@ixys.com

Edisonstr. 15 · Lampertheim · Germany

Phone: +49.6206.503.0 · Fax: +49.6206.503.627

e-mail:marcom@ixys.de

7 - 7

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