IXBF14N300 [LITTELFUSE]
Insulated Gate Bipolar Transistor,;型号: | IXBF14N300 |
厂家: | LITTELFUSE |
描述: | Insulated Gate Bipolar Transistor, 栅 |
文件: | 总6页 (文件大小:233K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
High Voltage, High Gain
BIMOSFETTM Monolithic
Bipolar MOS Transistor
VCES = 3000V
IC90 = 14A
VCE(sat) 2.7V
IXBF14N300
(Electrically Isolated Tab)
ISOPLUS i4-PakTM
Symbol
VCES
Test Conditions
Maximum Ratings
TJ = 25°C to 150°C
3000
3000
V
V
VCGR
TJ = 25°C to 150°C, RGE = 1M
VGES
VGEM
Continuous
Transient
± 20
± 30
V
V
1
2
Isolated Tab
5
IC25
IC90
ICM
TC = 25°C
28
14
98
A
A
A
TC = 90°C
1 = Gate
2 = Emitter
5 = Collector
TC = 25°C, 1ms
SSOA
(RBSOA)
VGE = 15V, TVJ = 125°C, RG = 20
Clamped Inductive Load
ICM = 120
VCE 1500
A
V
TSC
(SCSOA)
VGE = 15V, TJ = 125°C,
RG = 82, VCE =1500V, Non-Repetitive
Features
10
μs
PC
TC = 25°C
120
W
Silicon Chip on Direct-Copper Bond
(DCB) Substrate
Isolated Mounting Surface
4000V~ Electrical Isolation
High Blocking Voltage
TJ
-55 ... +150
150
°C
°C
°C
TJM
Tstg
-55 ... +150
High Peak Current Capability
Low Saturation Voltage
TL
TSOLD
Maximum Lead Temperature for Soldering
Plastic Body for 10s
300
260
°C
°C
FC
Mounting Force
20..120 / 4.5..27
N/lb.
V~
g
Advantages
VISOL
Weight
50/60Hz, 5 Seconds
4000
5
Low Gate Drive Requirement
High Power Density
Symbol Test Conditions
(TJ = 25°C Unless Otherwise Specified)
Characteristic Values
Applications
Min.
3000
3.0
Typ.
Max.
BVCES
VGE(th)
ICES
IC
IC
= 250μA, VGE = 0V
= 250μA, VCE = VGE
V
V
Switch-Mode and Resonant-Mode
Power Supplies
Uninterruptible Power Supplies (UPS)
Laser Generators
Capacitor Discharge Circuits
5.0
VCE = VCES, VGE = 0V
Note 2, TJ = 125°C
VCE = 0V, VGE = ± 20V
25 μA
mA
±100 nA
1
IGES
AC Switches
VCE(sat)
IC = 14A, VGE = 15V, Note 1
TJ = 125°C
2.2
2.7
2.7
V
V
© 2016 IXYS CORPORATION, All Rights Reserved
DS100602A(03/16)
IXBF14N300
Symbol Test Conditions
Characteristic Values
(TJ = 25°C Unless Otherwise Specified)
Min.
Typ.
Max.
gfS
IC = 14A, VCE = 10V, Note 1
8
13
S
Cies
Coes
Cres
1275
50
pF
pF
pF
VCE = 25V, VGE = 0V, f = 1MHz
18
Qg
62
7
nC
nC
nC
Qge
Qgc
IC = 14A, VGE = 15V, VCE = 1500V
30
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
40
380
ns
ns
ns
ns
Resistive Switching Times, TJ = 25°C
IC = 14A, VGE = 15V
166
VCE = 960V, RG = 20
1900
64
746
ns
ns
ns
ns
Resistive Switching Times, TJ = 125°C
IC = 14A, VGE = 15V
180
VCE = 960V, RG = 20
1730
RthJC
RthCS
1.04 °C/W
°C/W
0.15
Reverse Diode
Symbol Test Conditions
Characteristic Values
(TJ = 25°C Unless Otherwise Specified)
Min.
Typ.
Max
VF
IF = 14A, VGE = 0V, Note 1
2.7
V
trr
1.4
23
16
μs
A
IF = 7A, VGE = 0V, -diF/dt = 100A/μs
IRM
QRM
VR = 100V, VGE = 0V
μC
Notes:
1. Pulse test, t 300μs, duty cycle, d 2%.
2. Device must be heatsunk for high-temperature leakage current
measurements to avoid thermal runaway.
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,860,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
IXBF14N300
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
Fig. 1. Output Characteristics @ TJ = 25ºC
250
200
150
100
50
28
24
20
16
12
8
V
= 25V
V
= 25V
GE
GE
23V
21V
17V
15V
13V
11V
19V
9V
7V
17V
15V
13V
11V
9V
7V
4
5V
0
0
0
0.5
1
1.5
2
2.5
3
3.5
0
5
10
15
20
25
30
VCE - Volts
VCE - Volts
Fig. 4. Dependence of VCE(sat) on
Junction Temperature
Fig. 3. Output Characteristics @ TJ = 125ºC
28
24
20
16
12
8
1.8
1.6
1.4
1.2
1.0
0.8
0.6
V
= 25V
GE
V
= 15V
GE
19V
15V
13V
11V
9V
I
= 28A
C
7V
I
= 14A
C
I
= 7A
C
4
5V
0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
-50
-25
0
25
50
75
100
125
150
VCE - Volts
TJ - Degrees Centigrade
Fig. 5. Collector-to-Emitter Voltage vs.
Gate-to-Emitter Voltage
Fig. 6. Input Admittance
45
40
35
30
25
20
15
10
5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
T
J
= 25ºC
I C = 28A
14A
T
J
= 125ºC
25ºC
- 40ºC
7.0
7A
0
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.5
8.0
8.5
9.0
5
7
9
11
13
15
17
19
21
23
25
VGE - Volts
VGE - Volts
© 2016 IXYS CORPORATION, All Rights Reserved
IXBF14N300
Fig. 7. Transconductance
Fig. 8. Forward Voltage Drop of Intrinsic Diode
20
18
16
14
12
10
8
50
45
40
35
30
25
20
15
10
5
T
J
= 25ºC
125ºC
T
J
= - 40ºC
25ºC
125ºC
V
= 0V
GE
6
V
= 15V
GE
4
2
0
0
0
5
10
15
20
25
30
35
40
45
50
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
VF - Volts
IC - Amperes
Fig. 10. Capacitance
Fig. 9. Gate Charge
10,000
1,000
100
16
14
12
10
8
f = 1 MHz
V
= 1500V
CE
I
I
= 14A
C
G
= 10mA
C
ies
6
C
oes
res
4
2
C
10
0
0
5
10
15
20
25
30
35
40
0
10
20
30
40
50
60
VCE - Volts
QG - NanoCoulombs
Fig. 11. Reverse-Bias Safe Operating Area
Fig. 12. Maximum Transient Thermal Impedance
aaa
140
120
100
80
2
1
D = 0.5
D = 0.2
D = 0.1
D = tp / T
0.1
60
t
p
D = 0.05
40
T
D = 0.02
D = 0.01
T
= 125ºC
J
R
= 20Ω
G
20
dv / dt < 10V / ns
Single Pulse
0
0.01
500
1000
1500
2000
2500
3000
0.000001 0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
VCE - Volts
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.
IXBF14N300
Fig. 14. Forward-Bias Safe Operating Area
Fig. 13. Forward-Bias Safe Operating Area
@ TC = 25ºC
@ TC = 75ºC
1000
100
10
1000
100
10
V
Limit
V
Limit
CE(sat)
CE(sat)
25µs
25µs
1
1
100µs
100µs
1ms
1ms
0.1
0.01
0.1
0.01
T = 150ºC
T = 150ºC
J
J
10ms
T
C
= 25ºC
T = 75ºC
C
10ms
Single Pulse
Single Pulse
100ms
100ms
DC
1,000
DC
1
10
100
10,000
1
10
100
1,000
10,000
VDS - Volts
VDS - Volts
ISOPLUS i4-Pak Outline
1 = Gate
2 = Emitter
3,4 = Colector
© 2016 IXYS CORPORATION, All Rights Reserved
IXYS REF: B_14N300(4P) 03-11-14
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.
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