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元器件品牌
IXBH2N250
[LITTELFUSE]
Insulated Gate Bipolar Transistor,;
元器件型号:
IXBH2N250
生产厂家:
LITTELFUSE
描述和应用:
Insulated Gate Bipolar Transistor,
局域网 栅 瞄准线 功率控制 晶体管
PDF文件:
总6页 (文件大小:238K)
下载文档:
下载PDF数据表文档文件
型号参数:IXBH2N250参数
查看货源
IXBH32N300
Preliminary Technical Information
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156
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56
IXYS
IXBH40N140
High Voltage BIMOSFET Monolithic Bipolar MOS Transistor - N-Channel, Enhancement Mode
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37
IXYS
IXBH40N140A
暂无描述
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156
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0
IXYS
IXBH40N160
High Voltage BIMOSFET Monolithic Bipolar MOS Transistor - N-Channel, Enhancement Mode
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189
IXYS
IXBH40N160A
Insulated Gate Bipolar Transistor, 40A I(C), 1600V V(BR)CES, N-Channel, TO-247AD,
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0
IXYS
IXBH42N170
High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor
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151
IXYS
IXBH42N170A
BIMOSFET Monolithic Bipolar MOS Transistor
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156
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54
IXYS
IXBH5N160G
High Voltage BIMOSFETTM
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223
IXYS
IXBH5N160G
Insulated Gate Bipolar Transistor,
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2
LITTELFUSE
IXBH6N170
High Voltage, High Gain BIMOSFET⑩ Monolithic Bipolar MOS Transistor
Warning
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146
IXYS
IXBH9N140
TRANSISTOR | IGBT | N-CHAN | 1.4KV V(BR)CES | 9A I(C) | TO-247AD
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27
ETC
IXBH9N140G
High Voltage BIMOSFET Monolithic Bipolar MOS Transistor
Warning
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33
IXYS
IXBH9N140G
High Voltage BIMOSFET Monolithic Bipolar MOS Transistor
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18
IXYS
IXBH9N160
TRANSISTOR | IGBT | N-CHAN | 1.6KV V(BR)CES | 9A I(C) | TO-247AD
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131
ETC
IXBH9N160G
High Voltage BIMOSFET Monolithic Bipolar MOS Transistor
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156
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156
IXYS
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