IXGA28N60A3 [LITTELFUSE]
Insulated Gate Bipolar Transistor,;
| 型号： | IXGA28N60A3 |
| 厂家： | 
LITTELFUSE |
| 描述： | Insulated Gate Bipolar Transistor, 栅 |
| 文件： | 总7页 (文件大小：260K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Advance Technical Information
GenX3TM 600V
IGBT
VCES = 600V
IC110 = 28A
VCE(sat) 1.4V
IXGA28N60A3
IXGP28N60A3
IXGH28N60A3
Ultra Low Vsat PT IGBT for up
to 5kHz Switching
TO-263 (IXGA)
G
E
C (Tab)
Symbol
Test Conditions
Maximum Ratings
TO-220 (IXGP)
VCES
VCGR
TJ = 25°C to 150°C
600
600
V
V
TJ = 25°C to 150°C, RGE = 1M
VGES
VGEM
Continuous
Transient
±20
±30
V
V
G
C
C (Tab)
E
IC25
IC110
ICM
TC = 25°C
TC = 110°C
TC = 25°C, 1ms
75
28
170
A
A
A
TO-247 AD (IXGH)
SSOA
VGE = 15V, TVJ = 125°C, RG = 10
ICM = 48
A
(RBSOA)
Clamped Inductive Load
@VCE VCES
PC
TC = 25°C
190
W
G
C
E
C (Tab)
TJ
TJM
Tstg
-55 ... +150
150
°C
°C
°C
G = Gate
E = Emitter
C
= Collector
Tab = Collector
-55 ... +150
TL
TSOLD
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
300
260
°C
°C
Features
FC
Md
Mounting Force (TO-263)
Mounting Torque (TO-247 & TO-220)
10..65 / 2.2..14.6
1.13 / 10
N/lb
Nm/lb.in
Optimized for Low Conduction Losses
Square RBSOA
International Standard Packages
Weight
TO-263
TO-220
TO-247
2.5
3.0
6.0
g
g
g
Advantages
High Power Density
Extremely Rugged
Low Gate Drive Requirement
Applications
Symbol
Test Conditions
Characteristic Values
Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
(TJ = 25C, Unless Otherwise Specified)
Min.
600
3.0
Typ.
Max.
BVCES
VGE(th)
ICES
IC = 250A, VGE = 0V
IC = 250A, VCE = VGE
VCE = VCES, VGE = 0V
V
V
5.0
25 A
250 A
TJ = 125C
TJ = 125C
IGES
VCE = 0V, VGE = 20V
100 nA
Inrush Current Portection Circuits
VCE(sat)
IC = 24A, VGE = 15V, Note 1
1.4
V
V
1.3
© 2016 IXYS CORPORATION, All Rights Reserved
DS100725(5/16)
IXGA28N60A3 IXGP28N60A3
IXGH28N60A3
Symbol Test Conditions
(TJ = 25°C Unless Otherwise Specified)
Characteristic Values
TO-220 Outline
Min.
Typ.
Max.
gfs
IC = 24A, VCE = 10V, Note 1
17
30
S
Cies
Coes
Cres
1790
100
26
pF
pF
pF
VCE = 25V, VGE = 0V, f = 1MHz
Qg(on)
Qge
Qgc
66
13
24
nC
nC
nC
IC = 24A, VGE = 15V, VCE = 0.5 • VCES
td(on)
tri
Eon
td(off)
tfi
18
26
ns
Pins: 1 - Gate
3 - Emitter
2 - Collector
ns
mJ
ns
Inductive load, TJ = 25°C
IC = 24A, VGE = 15V
0.7
300
260
2.4
VCE = 480V, RG = 10
ns
Note 2
Eof
mJ
f
td(on)
tri
20
26
ns
ns
Inductive load, TJ = 125°C
IC = 24A, VGE = 15V
Eon
td(off)
tfi
1.4
470
400
4.2
mJ
ns
VCE = 480V, RG = 10
ns
Note 2
Eoff
mJ
RthJC
RthCS
RthCS
0.66 °C/W
°C/W
TO-247 Outline
D
A
TO-220
TO-247
0.50
0.21
A
B
0P 0K M D B M
E
A2
°C/W
Q
S
D2
R
D1
Notes:
D
0P1
4
1. Pulse test, t 300μs, duty cycle, d 2%.
2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG.
R1
1
2
3
IXYS OPTION
C
L1
E1
L
TO-263 Outline
A1
b
b2
c
b4
1 - Gate
2,4 - Collector
3 - Emitter
e
J
M C A M
1 - Gate
2,4 - Collector
3 - Emitter
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experi-
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,860,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
IXGA28N60A3 IXGP28N60A3
IXGH28N60A3
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
Fig. 1. Output Characteristics @ TJ = 25ºC
50
45
40
35
30
25
20
15
10
5
300
250
200
150
100
50
V
= 15V
GE
V
= 15V
GE
13V
11V
13V
9V
7V
11V
9V
7V
0
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0
2
4
6
8
10
12
14
16
VCE - Volts
VCE - Volts
Fig. 4. Dependence of VCE(sat) on
Junction Temperature
Fig. 3. Output Characteristics @ TJ = 125ºC
50
40
30
20
10
0
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
V
= 15V
GE
V
= 15V
GE
13V
11V
I
= 48A
C
9V
7V
I
I
= 24A
= 12A
C
C
5V
-50
-25
0
25
50
75
100
125
150
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
VCE - Volts
TJ - Degrees Centigrade
Fig. 5. Collector-to-Emitter Voltage
vs. Gate-to-Emitter Voltage
Fig. 6. Input Admittance
100
90
80
70
60
50
40
30
20
10
0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
T
J
= 25ºC
I
= 48A
C
24A
12A
T
= 125ºC
J
25ºC
- 40ºC
5
6
7
8
9
10
11
12
13
14
15
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
VGE - Volts
VGE - Volts
© 2016 IXYS CORPORATION, All Rights Reserved
IXGA28N60A3 IXGP28N60A3
IXGH28N60A3
Fig. 7. Transconductance
Fig. 8. Gate Charge
45
40
35
30
25
20
15
10
5
16
14
12
10
8
V
= 300V
CE
I
I
= 24A
C
G
T
J
= - 40ºC
= 10mA
25ºC
125ºC
6
4
2
0
0
0
10
20
30
40
50
60
70
80
90
100
0
10
20
30
40
50
60
70
IC - Amperes
QG - NanoCoulombs
Fig. 9. Reverse-Bias Safe Operating Area
Fig. 10. Capacitance
10,000
1,000
100
50
40
30
20
10
0
f
= 1 MHz
C
ies
C
oes
T
= 125ºC
J
R
= 10
G
dv / dt < 10V / ns
C
res
10
100
150
200
250
300
350
400
450
500
550
600
650
0
5
10
15
20
25
30
35
40
VCE - Volts
VCE - Volts
Fig. 11. Maximum Transient Thermal Impedance
1
0.1
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXGA28N60A3 IXGP28N60A3
IXGH28N60A3
Fig. 13. Inductive Switching
Fig. 12. Inductive Switching
Energy Loss vs. Junction Temperature
Energy Loss vs. Gate Resistance
8
7
6
5
4
3
2
1
0
3.2
10
9
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
E
R
E
E
E
off
on
off
on
2.8
= 10ꢀ V
= 15V
GE
G
T
J
= 125ºC , V = 15V
GE
I
I
= 40A
= 20A
C
C
V
= 480V
CE
8
V
= 480V
CE
2.4
2.0
1.6
1.2
0.8
0.4
0.0
7
I
=40A
C
6
5
I
I
= 20A
= 10A
4
C
C
3
2
I
= 10A
C
1
10
30
50
70
90
110
130
150
25
35
45
55
65
75
85
95
105
115
125
RG - Ohms
TJ - Degrees Centigrade
Fig. 14. Inductive Switching
Fig. 15. Inductive Turn-off
Energy Loss vs. Collector Current
Switching Times vs. Gate Resistance
8
7
6
5
4
3
2
1
0
3.2
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0.0
540
520
500
480
460
440
420
400
380
360
340
1300
1200
1100
1000
900
E
R
E
t f i
td(off)
off
on
T
J
= 125ºC, VGE = 15V
= 10Ω
V
= 15V
GE
G
VCE = 480V
V
= 480V
CE
I
= 10A, 20A, 40A
C
800
700
T
= 125ºC
J
600
500
400
T
J
= 25ºC
I
= 10A
C
300
10
15
20
25
30
35
40
10
30
50
70
90
110
130
150
IC - Amperes
RG - Ohms
Fig. 16. Inductive Turn-off
Switching Times vs. Collector Current
Fig. 17. Inductive Turn-off
Switching Times vs. Junction Temperature
560
520
480
440
400
360
320
280
240
200
160
620
520
480
440
400
360
320
280
240
200
560
520
480
440
400
360
320
280
240
t f i
td(off)
t f i
td(off)
580
540
500
460
420
380
340
300
260
220
R
G
= 10Ω , V = 15V
R
= 10ꢀ , V = 15V
GE
G
GE
V
= 480V
V
= 480V
CE
CE
T
J
= 125ºC
I
= 40A, 20A, 10A
C
T
J
= 25ºC
25
35
45
55
65
75
85
95
105
115
125
10
15
20
25
30
35
40
TJ - Degrees Centigrade
IC - Amperes
© 2016 IXYS CORPORATION, All Rights Reserved
IXGA28N60A3 IXGP28N60A3
IXGH28N60A3
Fig. 18. Inductive Turn-on
Fig. 19. Inductive Turn-on
Switching Times vs. Gate Resistance
Switching Times vs. Junction Temperature
130
110
90
130
110
90
50
45
40
35
30
25
20
15
10
5
24
t r i
td(on)
23
T
J
= 125ºC, V = 15V
GE
I
= 40A
C
22
21
20
19
18
17
16
15
V
= 480V
CE
t r i
td(on)
I
= 40A
C
R
G
= 10 , V = 15V
GE
V
= 480V
CE
70
70
I
I
= 20A
C
I
= 20A
C
50
50
30
30
I
= 10A
C
= 10A
65
C
10
10
10
30
50
70
90
110
130
150
25
35
45
55
75
85
95
105
115
125
TJ - Degrees Centigrade
RG - Ohms
Fig. 20. Inductive Turn-on
Switching Times vs. Collector Current
50
45
40
35
30
25
20
15
10
24
23
22
21
20
19
18
17
16
t r i
td(on)
R
G
= 10 , V = 15V
GE
V
= 480V
CE
T
J
= 125ºC, 25ºC
25ºC < T < 125ºC
J
10
15
20
25
30
35
40
IC - Amperes
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: IXG_28N60A3 (45) 7-02-08-A
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.
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