IXGF20N300 [LITTELFUSE]
Insulated Gate Bipolar Transistor, 22A I(C), 3000V V(BR)CES, N-Channel, I4PAK-3;
| 型号： | IXGF20N300 |
| 厂家： | 
LITTELFUSE |
| 描述： | Insulated Gate Bipolar Transistor, 22A I(C), 3000V V(BR)CES, N-Channel, I4PAK-3 通用开关 栅 晶体管 |
| 文件： | 总6页 (文件大小：241K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VCES = 3000V
IC25 = 22A
VCE(sat) ≤ 3.2V
High Voltage IGBT
For Capacitor Discharge
Applications
IXGF20N300
( Electrically Isolated Tab)
ISOPLUS i4-PakTM
Symbol
Test Conditions
Maximum Ratings
VCES
VCGR
TJ = 25°C to 150°C
3000
3000
V
V
TJ = 25°C to 150°C, RGE = 1MΩ
1
2
VGES
VGEM
Continuous
Transient
± 20
± 30
V
V
Isolated Tab
5
IC25
IC90
ICM
TC = 25°C
22
14
A
A
A
1 = Gate
2 = Emitter
5 = Collector
TC = 90°C
TC = 25°C, VGE = 20V, 1ms
103
SSOA
VGE= 20V, TVJ = 125°C, RG = 10Ω
ICM = 200
A
(RBSOA)
Clamped Inductive Load
TC = 25°C
@0.8 • VCES
Features
PC
100
W
ꢀ
Silicon Chip on Direct-Copper Bond
(DCB) Substrate
Isolated Mounting Surface
4000V Electrical Isolation
High Peak Current Capability
Low Saturation Voltage
TJ
-55 ... +150
150
°C
°C
°C
TJM
Tstg
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
-55 ... +150
TL
TSOLD
1.6 mm (0.062 in.) from Case for 10s
Plastic Body for 10s
300
260
°C
°C
Molding Epoxies Meet UL 94 V-0
Flammability Classification
FC
Mounting Force
20..120/4.5..27
Nm/lb-in.
VISOL
Weight
50/60Hz, 1 Minute
4000
6
V~
g
Applications
ꢀ
Capacitor Discharge
Pulser Circuits
Symbol
Test Conditions
Characteristic Values
Min. Typ. Max.
ꢀ
(TJ = 25°C, Unless Otherwise Specified)
BVCES
VGE(th)
ICES
IC = 250μA, VGE = 0V
IC = 250μA, VCE = VGE
VCE = 0.8 • VCES, VGE = 0V
3000
3.0
V
V
Advantages
5.0
25 μA
mA
ꢀ
High Power Density
Note 2, TJ = 125°C
2
ꢀ
Easy to Mount
IGES
VCE = 0V, VGE = ±20V
±100 nA
3.2
VCE(sat)
IC = 20A, VGE = 15V, Note 1
V
DS100099B(11/09)
© 2009 IXYS CORPORATION, All Rights Reserved
IXGF20N300
ISOPLUS i4-PakTM (HV) Outline
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, Unless Otherwise Specified)
Min.
Typ.
Max.
gfs
IC = 20A, VCE = 10V, Note 1
VGE = 20V, VCE = 20V, Note 1
8
12
S
A
IC(ON)
180
Cies
Coes
Cres
1125
48
pF
pF
pF
VCE = 25V, VGE = 0V, f = 1MHz
IC = 20A, VGE = 15V, VCE = 600V
16
Qg
31
5.8
12
nC
nC
nC
Qge
Qgc
td(on)
38
ns
Resistive Switching Times
IC = 20A, VGE = 15V
Pin 1 = Gate
Pin 2 = Emitter
Pin 3 = Collector
Tab 4 = Isolated
tr
td(off)
486
145
ns
ns
VCE = 960V, RG = 10Ω
tf
210
ns
RthJC
RthCS
RthJA
1.25 °C/W
°C/W
0.15
30
°C/W
Notes:
1. Pulse test, t < 300μs, duty cycle, d < 2%.
2. Device must be heatsunk for high-temperature leakage current
measurements to avoid thermal runaway.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,727,585
7,005,734 B2 7,157,338B2
7,063,975 B2
6,534,343
6,583,505
6,710,405 B2 6,759,692
6,710,463
6,771,478 B2 7,071,537
IXGF20N300
Fig. 1. Output Characteristics @ TJ = 25ºC
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
80
70
60
50
40
30
20
10
0
220
200
180
160
140
120
100
80
VGE = 25V
VGE = 25V
20V
20V
15V
15V
10V
10V
5V
60
40
20
5V
0
0
-50
4
2
4
6
8
10
12
14
16
18
20
22
24
150
13
0
1
2
3
4
5
6
VCE - Volts
VCE - Volts
Fig. 4. Dependence of VCE(sat) on
Junction Temperature
Fig. 3. Output Characteristics @ TJ = 125ºC
80
70
60
50
40
30
20
10
0
3.8
3.4
3.0
2.6
2.2
1.8
1.4
1.0
0.6
VGE = 25V
20V
VGE = 15V
I C = 80A
15V
10V
I C = 40A
5V
I C = 20A
0
1
2
3
4
5
6
7
8
-25
0
25
50
75
100
125
VCE - Volts
TJ - Degrees Centigrade
Fig. 5. Collector-to-Emitter Voltage
vs. Gate-to-Emitter Voltage
Fig. 6. Input Admittance
80
70
60
50
40
30
20
10
0
10
9
TJ = - 40ºC
VGE = 15V
25ºC
125ºC
8
I C = 80A
7
6
5
40A
4
3
20A
12
2
5
6
7
8
9
10
11
12
7
8
9
10
11
13
14
15
16
17
18
19
VGE - Volts
VGE - Volts
© 2009 IXYS CORPORATION, All Rights Reserved
IXGF20N300
Fig. 7. Transconductance
Fig. 8. Gate Charge
18
16
14
12
10
8
16
14
12
10
8
TJ = - 40ºC
VCE = 600V
I
I
C = 20A
G = 10mA
25ºC
125ºC
6
6
4
4
2
2
0
0
0
10
20
30
40
50
60
70
80
90
0
4
8
12
16
20
24
28
32
IC - Amperes
QG - NanoCoulombs
Fig. 9. Reverse-Bias Safe Operating Area
Fig. 10. Capacitance
10,000
1,000
100
220
200
180
160
140
120
100
80
= 1 MHz
f
C
ies
C
oes
60
TJ = 125ºC
40
RG = 10Ω
dv / dt < 10V / ns
C
res
20
0
10
600
900
1200
1500
1800
2100
2400
2700
3000
0
5
10
15
20
25
30
35
40
VCE - Volts
VCE - Volts
Fig. 11. Maximum Transient Thermal Impedance
10.0
1.0
0.1
0.0
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXGF20N300
Fig. 13. Resistive Turn-on Rise Time
vs. Collector Current
Fig. 12. Resistive Turn-on Rise Time
vs. Junction Temperature
1100
1000
900
800
700
600
500
400
300
1000
900
800
700
600
500
400
300
RG = 10Ω , VGE = 15V
VCE = 960V
TJ = 125ºC
I C = 40A
RG = 10Ω , VGE = 15V
CE = 960V
V
I C = 20A
TJ = 25ºC
25
35
45
55
65
75
85
95
105
115
125
20
30
40
50
IC - Amperes
60
70
80
TJ - Degrees Centigrade
Fig. 15. Resistive Turn-off Switching Times
vs. Junction Temperature
Fig. 14. Resistive Turn-on Switching Times
vs. Gate Resistance
240
230
220
210
200
190
180
170
160
150
140
130
170
165
160
155
150
145
140
135
130
125
120
115
2,000
1,800
1,600
1,400
1,200
1,000
800
350
t f
td(off
) - - - -
t r
t
d(on) - - - -
300
250
200
150
100
50
RG = 10Ω, VGE = 15V
TJ = 125ºC, VGE = 15V
VCE = 960V
VCE = 960V
I C = 20A
I C = 20A, 40A
I C = 40A
600
0
25
35
45
55
65
75
85
95
105
115
125
10
100
1000
RG - Ohms
TJ - Degrees Centigrade
Fig. 17. Resistive Turn-off Switching Times
vs. Gate Resistance
Fig. 16. Resistive Turn-off Switching Times
vs. Collector Current
240
200
900
800
700
600
500
400
300
200
100
0
2700
2400
2100
1800
1500
1200
900
t f
td(off
) - - - -
t r
t
d(on) - - - -
220
200
180
160
140
120
180
160
140
120
100
80
RG = 10Ω, VGE = 15V
TJ = 125ºC, VGE = 15V
VCE = 960V
VCE = 960V
TJ = 25ºC
I C = 20A, 40A
TJ = 125ºC
600
300
0
10
100
1000
20
30
40
50
IC - Amperes
60
70
80
RG - Ohms
© 2009 IXYS CORPORATION, All Rights Reserved
IXYS REF: G_20N250(4P-P528)11-18-09-B
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.
相关型号：
IXGF36N300
Insulated Gate Bipolar Transistor, 36A I(C), 3000V V(BR)CES, N-Channel, PLASTIC, ISOPLUS, I4PAK-3
IXYS
IXGF36N300
Insulated Gate Bipolar Transistor, 36A I(C), 3000V V(BR)CES, N-Channel, I4PAK-3
LITTELFUSE
©2020 ICPDF网 联系我们和版权申明