IXGP20N120B [LITTELFUSE]

Insulated Gate Bipolar Transistor, 40A I(C), 1200V V(BR)CES, N-Channel, TO-220AB, TO-220, 3 PIN;


型号：	IXGP20N120B
厂家：	LITTELFUSE
描述：	Insulated Gate Bipolar Transistor, 40A I(C), 1200V V(BR)CES, N-Channel, TO-220AB, TO-220, 3 PIN 局域网栅功率控制晶体管
文件：	总6页 (文件大小：500K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

High Voltage IGBT with

Diode

Designed for induction

heating applications

IXGP 20N120B

IXGP 20N120BD1

V_CES

I_C25

= 1200 V

= 40 A

V_CE(sat)= 3.4 V

t_fi(typ)

= 160 ns

Maximum Ratings

Symbol

TestConditions

TO-220 (IXGP)

V_CES

V_CGR

T_J= 25°C to 150°C

1200

T_J= 25°C to 150°C; R_GE= 1 MΩ

V_GES

V_GEM

Continuous

Transient

C (TAB)

I_C25

I_C110

I_CM

T_C= 25°C

T_C= 110°C

G = Gate

C = Collector

TAB = Collector

T_C= 25°C, 1 ms

100

E = Emitter

SSOA

(RBSOA)

V_GE= 15 V, T_J= 125°C, R_G= 10 Ω

Clamped inductive load

I_CM= 48

@0.8 V_CES

Features

^zInternational standard TO-220

package

P_C

T_C= 25°C

190

^zIGBT and anti-parallel FRED for

resonant power supplies

- Induction heating

- Rice cookers

^zMOS Gate turn-on

T_J

-55 ... +150

150

°C

T_JM

T_stg

-55 ... +150

M_d

Mounting torque

1.13/10 Nm/lb.in.

- drive simplicity

^zFast Recovery Expitaxial Diode (FRED)

- soft recovery with low I_RM

Maximum lead temperature for soldering

1.6 mm (0.062 in.) from case for 10 s

300

°C

Weight

Advantages

^zSaves space (two devices in one

package)

Easy to mount with 1 screw

(isolated mounting screw hole)

Reduces assembly time and cost

Symbol

TestConditions

Characteristic Values

(T_J= 25°C, unless otherwise specified)

min. typ. max.

V_GE(th)

I_CES

I_C= 250 µA, V_CE= V_GE

2.5

5.0

V_CE= V_CES

V_GE= 0 V

20N120B

20N120BD1

25 µA

50 µA

I_GES

V_CE= 0 V, V_GE= 20 V

100 nA

V_CE(sat)

I_C

= 20A_,V_GE= 15 V

2.9

2.8

3.4

Note 2

T_J=125°C

DS99088A(12/03)

IXGP 20N120BD1

Symbol

g_fs

TestConditions

Characteristic Values

(T_J= 25°C, unless otherwise specified)

min. typ. max.

TO-220 (IXGP) Outline

I_C= 20A; V_CE= 10 V,

Note 2.

C_ies

1040

C_oes

V_CE= 25 V, V_GE= 0 V, f = 1 MHz

20N120B

20N120BD1

C_res

Q_g

Q_ge

Q_gc

I_C= 20A, V_GE= 15 V, V_CE= 0.5 V_CES

Pins: 1 - Gate

2 - Drain

t_d(on)

t_ri

Inductive load, T_J= 25°C

I_C= 20 A; V_GE= 15 V

t_d(off)

270

380 ns

V_CE= 0.8 V_CES; R_G= R_off= 10 Ω

Note 1.

t_fi

E_off

220

2.2

360 ns

3.5 mJ

t_d(on)

t_ri

Inductive load, T_J= 125°C

I_C= 20A; V_GE= 15 V

E_on

t_d(off)

1.6

340

V_CE= 0.8 V_CES; R_G= R_off= 10 Ω

Note 1

t_fi

E_off

450

5.0

R_thJC

0.65 K/W

ReverseDiode(FRED)

Characteristic Values

(T_J= 25°C, unless otherwise specified)

min. typ. max.

Symbol

TestConditions

I_F

T_C= 90°C

V_F

I_F= 10 A, V_GE= 0 V

3.3

I_RM

t_rr

I_F= 10 A; -di_F/dt = 400 A/µs, V_R= 600 V

V_GE= 0 V; T_J= 125°C

120

t_rr

I_F= 1 A; -di_F/dt = 100 A/µs; V_R= 30 V, V_GE= 0 V

R_thJC

2.5 K/W

Notes: 1.

Switching times may increase for V_CE(Clamp) > 0.8 • V_CES

higher T_Jor increased R_G.

Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %

IXYS reserves the right to change limits, test conditions, and dimensions.

IXYSMOSFETs andIGBTsarecovered byoneormore

ofthefollowingU.S.patents:

4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1

4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343

IXGP 20N120BD1

Fig. 1. Output Characteristics

@ 25 Deg. C

Fig. 2. Extended Output Characteristics

@ 25 deg. C

160

140

120

100

V_GE= 15V

13V

11V

V_GE= 15V

13V

11V

0.5

1.5

2.5

3.5

4.5

-50

V_{C E}- Volts

10 12 14 16 18 20

V_{C E}- Volts

Fig. 3. Output Characteristics

@ 125 Deg. C

Fig. 4. Dependence of V_CE(sat)on

Temperature

1.5

1.4

1.3

1.2

1.1

1.0

0.9

0.8

0.7

V_GE= 15V

13V

11V

V_GE= 15V

I_C= 40A

I_C= 20A

I_C= 10A

1.5

2 2.5

V_CE- Volts

3.5

4.5

-25

100 125 150

T_J- Degrees Centigrade

Fig. 5. Collector-to-Emitter Voltage

vs. Gate-to-Emiiter voltage

Fig. 6. Input Admittance

6.5

T_J= 25ºC

5.5

I_C= 40A

20A

10A

4.5

3.5

T_J= 125ºC

25ºC

-40ºC

2.5

1.5

10 11 12 13 14 15 16 17

V_{G E}- Volts

IXGP 20N120BD1

Fig. 8. Dependence of Turn-off

Energy Loss on R_G

Fig. 7. Transconductance

T_J= 125ºC

V_GE= 15V

V_CE= 960V

T_J= -40ºC

25ºC

125ºC

I_C= 40A

I_C= 20A

I_C= 10A

110

70 90

R _G- Ohms

130

150

I _C- Amperes

Fig. 9. Dependence of Turn-Off

Energy Loss on I_c

Fig. 10. Dependence of Turn-off

Energy Loss on Temperature

R_G= 10Ω

R_G= 100Ω - - -

V_GE= 15V

R_G= 10Ω

R_G= 100Ω - - -

I_C= 40A

V_GE= 15V

V_CE= 960V

T_J= 125ºC

I_C= 20A

T_J= 25ºC

I_C= 10A

25 35 45 55 65 75 85 95 105 115 125

20 25

I _C- Amperes

T_J- Degrees Centigrade

Fig. 11. Dependence of Turn-off

Switching Time on R_G

Fig. 12. Dependence of Turn-off

Switching Time on I_c

1400

1200

1000

800

550

500

450

400

350

300

250

200

t_d(off)

t_fi

t_d(off)

t_fi

R_G= 10Ω

- - - - - -

T_J= 125ºC

_GE= 15V

- - - - - -

V_GE= 15V

V_CE= 960V

T_J= 125ºC

I_C= 10A

I_C= 40A

600

400

T_J= 25ºC

I_C= 20A

R _G- Ohms

200

110

130

150

I _C- Amperes

IXYS reserves the right to change limits, test conditions, and dimensions.

IXYSMOSFETs andIGBTsarecovered byoneormore

ofthefollowingU.S.patents:

4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1

4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343

IXGP 20N120BD1

Fig. 13. Dependence of Turn-off

Switching Time on Temperature

Fig. 14. Gate Charge

500

450

400

350

300

250

200

t_d(off)

t_fi

R_G= 10Ω

V_GE= 15V

V_CE= 960V

V_CE= 600V

I_C= 20A

I_G= 10mA

I_C= 40A

- - - - - -

I_C= 10A

I_C= 40A

I_C= 20A

25 35 45 55 65 75 85 95 105 115 125

T_J- Degrees Centigrade

Q _G- nanoCoulombs

Fig. 15. Capacitance

10000

1000

100

f = 1 MHz

ies

oes

res

V_{C E}- Volts

Fig. 16. Maximum Transient Thermal Resistance

1.0

0.5

0.1

100

1000

Pulse Width - milliseconds

IXGP 20N120BD1

2000

T_VJ= 100°C

V_R= 600V

T_VJ= 100°C

V_R= 600V

1500

Q_r

I_F

I_RM

I_F= 20A

I_F= 10A

I_F= 5A

1000

500

T_VJ=150°C

T_VJ=100°C

I_F= 20A

I_F= 10A

I_F= 5A

T_VJ= 25°C

A/µs

-di_F/dt

V_F

4 V

100

1000

200 400 600 800 1000

A/µs

-di_F/dt

Fig. 13. Forward current I_Fversus V_F

2.0

Fig. 14. Reverse recovery charge Q_r

versus -di_F/dt

Fig. 15. Peak reverse current I_RM

versus -di_F/dt

150

120

1.2

µs

T_VJ= 100°C

V_R= 600V

140

130

120

110

100

T_VJ= 100°C

V_FR

t_rr

t_fr

1.5

K_f

I_F= 10A

0.8

t_fr

V_FR

1.0

I_RM

I_F= 20A

I_F= 10A

I_F= 5A

0.4

0.5

Q_r

0.0

A/µs

120

160

200 400 600 800 1000

°C

A/µs

di_F/dt

T_VJ

-di_F/dt

Fig. 16. Dynamic parameters Q_r, I_RM

versus T_VJ

Fig. 17. Recovery time t_rrversus -di_F/dt

Fig. 18. Peak forward voltage V_FRand

t_frversus di_F/dt

K/W

Constants for Z_thJCcalculation:

R_thi(K/W)

t_i(s)

Z_thJC

0.1

1.449

0.558

0.493

0.0052

0.0003

0.017

0.01

DSEP 8-12A

0.001

0.00001

0.0001

0.001

0.01

0.1

Fig. 19. Transient thermal resistance junction-to-case

IXYS reserves the right to change limits, test conditions, and dimensions.

IXYSMOSFETs andIGBTsarecovered byoneormore

ofthefollowingU.S.patents:

4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1

4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343

IXGP20N120B [LITTELFUSE]

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