IXTA6N100D2 [LITTELFUSE]
Power Field-Effect Transistor,;
| 型号： | IXTA6N100D2 |
| 厂家： | 
LITTELFUSE |
| 描述： | Power Field-Effect Transistor, |
| 文件： | 总6页 (文件大小：172K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Depletion Mode
MOSFET
VDSX = 1000V
ID(on) > 6A
IXTA6N100D2
IXTP6N100D2
IXTH6N100D2
RDS(on) 2.2
N-Channel
D
TO-263 AA (IXTA)
G
S
G
D (Tab)
S
TO-220AB (IXTP)
Symbol
VDSX
Test Conditions
Maximum Ratings
TJ = 25C to 150C
1000
V
G
D
D (Tab)
VGSX
VGSM
Continuous
Transient
20
30
V
V
S
TO-247 (IXTH)
PD
TC = 25C
300
W
TJ
TJM
Tstg
- 55 ... +150
150
- 55 ... +150
C
C
C
G
TL
TSOLD
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
300
260
°C
°C
D
S
D (Tab)
Md
Mounting Torque (TO-220 & TO-247)
1.13 / 10
Nm/lb.in.
G = Gate
S = Source
D
= Drain
Weight
TO-263
TO-220
TO-247
2.5
3.0
6.0
g
g
g
Tab = Drain
Features
• Normally ON Mode
• International Standard Packages
• Molding Epoxies Meet UL94V-0
Flammability Classification
Symbol
Test Conditions
Characteristic Values
(TJ = 25C, Unless Otherwise Specified)
Min.
1000
- 2.5
Typ.
Max.
BVDSX
VGS(off)
IGSX
VGS = - 5V, ID = 250A
VDS = 25V, ID = 250A
VGS = 20V, VDS = 0V
VDS = VDSX, VGS = - 5V
V
V
Advantages
- 4.5
• Easy to Mount
• Space Savings
• High Power Density
100 nA
A
50 A
IDSX(off)
5
TJ = 125C
Applications
RDS(on)
ID(on)
VGS = 0V, ID = 3A, Note 1
2.2
• Audio Amplifiers
• Start-Up Circuits
• Protection Circuits
• Ramp Generators
• Current Regulators
• Active Loads
VGS = 0V, VDS = 50V, Note 1
6
A
DS100183C(4/17)
© 2017 IXYS CORPORATION, All Rights Reserved
IXTA6N100D2 IXTP6N100D2
IXTH6N100D2
Symbol
Test Conditions
Characteristic Values
TO-220 (IXTP) Outline
(TJ = 25C, Unless Otherwise Specified)
Min.
Typ.
Max.
gfs
VDS = 30V, ID = 3A, Note 1
2.6
4.2
S
Ciss
Coss
Crss
2650
167
41
pF
pF
pF
VGS = -10V, VDS = 25V, f = 1MHz
td(on)
tr
td(off)
tf
25
80
34
47
ns
ns
ns
ns
Resistive Switching Times
VGS = 5V, VDS = 500V, ID = 3A
RG = 2.4 (External)
Qg(on)
Qgs
95
11
51
nC
nC
nC
Pins: 1 - Gate
3 - Source
2 - Drain
4 - Drain
VGS = 5V, VDS = 500V, ID = 3A
Qgd
RthJC
RthCS
0.41C/W
C/W
TO-220
TO-247
0.50
0.21
C/W
Safe-Operating-Area Specification
Characteristic Values
Symbol
SOA
Test Conditions
Min.
Typ.
Max.
VDS = 800V, ID = 225mA, TC = 75C, Tp = 5s
180
W
TO-247 (IXTH) AD Outline
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25C, Unless Otherwise Specified)
Min.
Typ.
Max.
VSD
IF = 6A, VGS = -10V, Note 1
0.8
1.3
V
trr
IRM
QRM
952
16
7.6
ns
A
μC
IF = 3A, -di/dt = 100A/s
VR = 100V, VGS = -10V
Note 1. Pulse test, t 300s, duty cycle, d 2%.
TO-263 (IXTA) Outline
Dim.
Millimeter
Min. Max.
Inches
Min. Max.
1 = Gate
2 = Drain
3 = Source
A
b
b2
4.06
0.51
1.14
4.83
0.99
1.40
.160
.020
.045
.190
.039
.055
c
c2
0.40
1.14
0.74
1.40
.016
.045
.029
.055
D
D1
8.64
8.00
9.65
8.89
.340
.280
.380
.320
E
9.65
10.41
.380
.405
E1
e
L
L1
L2
L3
6.22
2.54
14.61
2.29
1.02
1.27
8.13
BSC
15.88
2.79
1.40
1.78
.270
.100 BSC
.575
.090
.040
.050
.320
1. Gate
2. Drain
3. Source
4. Drain
.625
.110
.055
.070
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,860,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463 6,771,478 B2 7,071,537
7,005,734 B2 7,157,338B2
7,063,975 B2
IXTA6N100D2 IXTP6N100D2
IXTH6N100D2
Fig. 1. Output Characteristics @ TJ = 25oC
Fig. 2. Extended Output Characteristics @ TJ = 25oC
6
5
4
3
2
1
0
14
12
10
8
V
= 5V
GS
V
= 5V
GS
2V
1V
2V
1V
0V
0V
-1V
6
-1V
4
- 2V
- 3V
2
- 2V
- 3V
0
0
1
2
3
4
5
6
7
8
9
10
11
0
10
20
30
40
50
60
VDS - Volts
VDS - Volts
Fig. 4. Drain Current @ TJ = 25oC
Fig. 3. Output Characteristics @ TJ = 125oC
6
5
4
3
2
1
0
1.E-01
1.E-02
1.E-03
1.E-04
1.E-05
1.E-06
1.E-07
V =
GS
V
= 5V
0V
GS
- 3.00V
- 3.25V
- 3.50V
- 3.75V
-1V
- 4.00V
- 4.25V
- 4.50V
- 2V
- 3V
0
5
10
15
20
25
0
100 200 300 400 500 600 700 800 900 1000 1100 1200
VDS - Volts
VDS - Volts
Fig. 5. Drain Current @ TJ = 100oC
Fig. 6. Dynamic Resistance vs. Gate Voltage
1.E+09
1.E+08
1.E+07
1.E+06
1.E+05
1.E-01
1.E-02
1.E-03
1.E-04
1.E-05
1.E-06
V
= 700V - 100V
∆
DS
VGS = - 3.25V
- 3.50V
- 3.75V
- 4.00V
T = 25oC
J
- 4.25V
- 4.50V
T = 100oC
J
-4.6
-4.4
-4.2
-4.0
-3.8
-3.6
-3.4
-3.2
-3.0
-2.8
0
100 200 300 400 500 600 700 800 900 1000 1100 1200
VDS - Volts
VGS - Volts
© 2017 IXYS CORPORATION, All Rights Reserved
IXTA6N100D2 IXTP6N100D2
IXTH6N100D2
Fig. 8. RDS(on) Normalized to ID = 3A Value
vs. Drain Current
Fig. 7. Normalized RDS(on) vs. Junction Temperature
3.0
2.6
2.2
1.8
1.4
1.0
0.6
0.2
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
V
I
= 0V
GS
V
= 0V
5V
GS
= 3A
D
T = 125oC
J
T = 25oC
J
-50
-4.0
-50
-25
0
25
50
75
100
125
150
0
2
4
6
8
10
12
14
TJ - Degrees Centigrade
ID - Amperes
Fig. 9. Input Admittance
Fig. 10. Transconductance
16
14
12
10
8
12
10
8
V
= 30V
DS
V
= 30V
DS
T
= - 40oC
25oC
J
125oC
6
T
J
= 125oC
25oC
- 40oC
6
4
4
2
2
0
0
-3.5
-3.0
-2.5
-2.0
-1.5
-1.0
-0.5
0.0
0.5
1.0
0
2
4
6
8
10
12
14
16
VGS - Volts
ID - Amperes
Fig. 11. Breakdown and Threshold Voltages
vs. Junction Temperature
Fig. 12. Forward Voltage Drop of Intrinsic Diode
18
16
14
12
10
8
1.3
1.2
1.1
1.0
0.9
0.8
V
= -10V
GS
VGS(off) @ V = 25V
DS
BVDSX@ V = - 5V
GS
T
J
= 125oC
6
T
J
= 25oC
4
2
0
-25
0
25
50
75
100
125
150
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
TJ - Degrees Centigrade
VSD - Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTA6N100D2 IXTP6N100D2
IXTH6N100D2
Fig. 13. Capacitance
Fig. 14. Gate Charge
10,000
1,000
100
5
4
V
= 500V
DS
I
I
= 3A
D
G
3
= 10mA
C
iss
2
1
0
-1
-2
-3
-4
-5
C
C
oss
rss
= 1 MHz
5
f
10
0
10
15
20
25
30
35
40
0
10
20
30
40
50
60
70
80
90
100
VDS - Volts
QG - NanoCoulombs
Fig. 15. Forward-Bias Safe Operating Area
@ TC = 25oC
Fig. 16. Forward-Bias Safe Operating Area
@ TC = 75oC
100
10
1
100
= 150oC
= 75oC
T
= 150oC
= 25oC
T
J
J
T
C
T
C
Single Pulse
Single Pulse
R
Limit
R
DS(on)
Limit
DS(on)
25μs
10
100μs
100μs
1ms
1ms
1
10ms
100ms
10ms
DC
100ms
DC
0.1
0.1
10
100
1,000
10
100
1,000
VDS - Volts
VDS - Volts
Fig. 17. Maximum Transient Thermal Impedance
1
0.1
0.01
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
© 2017 IXYS CORPORATION, All Rights Reserved
IXYS REF: T_6N100D2(6C) 7-15-14-A
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.
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