IXTH10P60 [LITTELFUSE]

Power Field-Effect Transistor,;


型号：	IXTH10P60
厂家：	LITTELFUSE
描述：	Power Field-Effect Transistor, 局域网开关脉冲晶体管
文件：	总6页 (文件大小：131K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

V_DSS= - 600V

I_D25= - 10A

Power MOSFETs

IXTT10P60

IXTH10P60

R_DS(on)

≤

1Ω

P-Channel Enhancement Mode

Avalanche Rated

TO-268 (IXTT)

D (Tab)

Symbol

V_DSS

Test Conditions

Maximum Ratings

T_J= 25°C to 150°C

T_J= 25°C to 150°C, R_GS= 1MΩ

- 600

TO-247 (IXTH)

V_DGR

V_GSS

V_GSM

Continuous

Transient

±20

±30

I_D25

I_DM

T_C= 25°C

T_C= 25°C, Pulse Width Limited by T_JM

- 10

- 40

D (Tab)

I_A

T_C= 25°C

- 10

E_AS

G = Gate

= Drain

S = Source

Tab = Drain

P_D

T_C= 25°C

300

T_J

T_JM

T_stg

- 55 ... +150

150

- 55 ... +150

°C

Features

T_L

T_sold

1.6mm (0.062in.) from Case for 10s

Plastic Body for 10 seconds

300

260

°C

International Standard Packages

Low R_{DS (on)}HDMOS^TMProcess

Rugged Polysilicon Gate Cell Structure

Avalanche Rated

Low Package Inductance

- Easy to Drive and to Protect

M_d

Mounting Torque (TO-247)

1.13 / 10

Nm/lb.in.

Weight

TO-268

TO-247

Advantages

Symbol

Test Conditions

Characteristic Values

(T_J= 25°C Unless Otherwise Specified)

Min.

- 600

- 3.0

Typ.

Max.

Easy to Mount

Space Savings

High Power Density

BV_DSS

V_GS(th)

I_GSS

V_GS= 0V, I_D= - 250μA

V_DS= V_GS, I_D= - 250μA

V_GS= ± 20V, V_DS= 0V

V_DS= 0.8 • V_DSS, V_GS= 0V

- 5.0

±100 nA

Applications

I_DSS

- 25 μA

High-Side Switching

Push Pull Amplifiers

DC Choppers

Automatic Test Equipment

T_J= 125°C

V_GS= 10V, I_D= 0.5 • I_D25, Note 1

-1 mA

R_DS(on)

DS98849E(01/13)

IXTT10P60

IXTH10P60

Symbol

Test Conditions

Characteristic Values

TO-247 Outline

(T_J= 25°C, Unless Otherwise Specified)

Min.

Typ.

Max.

g_fs

V_DS= -10V, I_D= 0.5 • I_D25, Note 1

V_GS= 0V, V_DS= - 25V, f = 1MHz

10.5

C_iss

C_oss

C_rss

4665

437

∅ P

157

t_d(on)

t_r

t_d(off)

t_f

Resistive Switching Times

V_GS= -10V, V_DS= 0.5 • V_DSS, I_D= 0.5 • I_D25

R_G= 4.7Ω (External)

Terminals: 1 - Gate

2 - Drain

3 - Source

Q_g(on)

Q_gs

135

Dim.

Millimeter

Min. Max.

Inches

Min. Max.

V_GS= -10V, V_DS= 0.5 • V_DSS, I_D= 0.5 • I_D25

Q_gd

A₁

A₂

4.7

2.2

5.3

2.54

2.6

.185 .209

.087 .102

.059 .098

R_thJC

R_thCS

0.42 °C/W

°C/W

b₁

b₂

1.0

1.65

2.87

1.4

2.13

3.12

.040 .055

.065 .084

.113 .123

TO-247

0.21

.016 .031

.819 .845

.610 .640

20.80 21.46

15.75 16.26

5.20

5.72 0.205 0.225

19.81 20.32

4.50

.780 .800

.177

Source-Drain Diode

∅P 3.55

3.65

.140 .144

5.89

6.40 0.232 0.252

4.32

6.15 BSC

5.49

.170 .216

242 BSC

Symbol

Test Conditions

Characteristic Values

(T_J= 25°C, Unless Otherwise Specified)

Min.

Typ.

Max.

TO-268 Outline

I_S

V_GS= 0V

- 10

I_SM

V_SD

t_rr

Repetitive, Pulse Width Limited by T_JM

I_F= I_S, V_GS= 0V, Note 1

- 40

- 3.0

I_F= -10A, -di/dt = -100A/μs

500

V_R= -100V, V_GS= 0V

Terminals: 1 - Gate

3 - Source

2 - Drain

4 - Drain

Note

1: Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXYS MOSFETs and IGBTs are covered

by one or more of the following U.S. patents: 4,860,072 5,017,508

4,881,106 5,034,796

4,835,592 4,931,844

5,049,961

5,063,307

5,187,117

5,237,481

5,381,025

5,486,715

6,162,665

6,259,123 B1

6,306,728 B1

6,404,065 B1 6,683,344

6,534,343

6,583,505

6,727,585

6,710,405 B2 6,759,692

6,710,463

7,005,734 B2 7,157,338B2

7,063,975 B2

6,771,478 B2 7,071,537

IXTT10P60

IXTH10P60

Fig. 2. Extended Output Characteristics @ T_J= 25ºC

Fig. 1. Output Characteristics @ T_J= 25ºC

-32

-28

-24

-20

-16

-12

-8

-10

-9

-8

-7

-6

-5

-4

-3

-2

-1

V_GS= -10V

- 7V

V_GS= -10V

- 8V

- 7V

- 6V

- 5.5V

- 6V

- 5.5V

- 5V

-4

- 5V

-5

-10

-15

-20

-25

-30

-1

-2

-3

-4

-5

-6

-7

-8

V_DS- Volts

Fig. 4. R_DS(on)Normalized to I_D= - 5A Value vs.

Junction Temperature

Fig. 3. Output Characteristics @ T_J= 125ºC

-10

-9

-8

-7

-6

-5

-4

-3

-2

-1

2.4

2.0

1.6

1.2

0.8

0.4

V_GS= -10V

- 7V

- 6V

I _D= -10A

I _D= - 5A

- 5V

- 4V

-1

-3

-5

-7

-9

-11

-13

-15

-50

-25

100

125

150

V_DS- Volts

T_J- Degrees Centigrade

Fig. 5. R_DS(on)Normalized to I_D= - 5A Value vs.

Drain Current

Fig. 6. Maximum Drain Current vs.

Case Temperature

-12

-10

-8

2.4

2.2

2.0

1.8

1.6

1.4

1.2

1.0

0.8

V_GS= -10V

T_J= 125ºC

-6

-4

T_J= 25ºC

-2

-50

-25

100

125

150

-5

-10

-15

-20

-25

-30

T_C- Degrees Centigrade

I_D- Amperes

IXTT10P60

IXTH10P60

Fig. 8. Transconductance

Fig. 7. Input Admittance

-20

-18

-16

-14

-12

-10

-8

T_J= - 40ºC

25ºC

125ºC

T_J= 125ºC

25ºC

- 40ºC

-6

-4

-2

-3.0

-3.4

-3.8

-4.2

-4.6

-5.0

-5.4

-5.8

-6.2

-2

-4

-6

-8

-10

-12

-14

-16

-18

-20

-22

V_GS- Volts

I_D- Amperes

Fig. 9. Forward Voltage Drop of Intrinsic Diode

Fig. 10. Gate Charge

-30

-25

-20

-15

-10

-5

-10

-9

-8

-7

-6

-5

-4

-3

-2

-1

V_DS= - 300V

I _D= - 5A

_G= -1mA

T_J= 125ºC

T_J= 25ºC

100

120

140

-0.5

-1

-1.5

-2

-2.5

Q_G- NanoCoulombs

V_SD- Volts

Fig. 11. Capacitance

Fig. 12. Maximum Transient Thermal Impedance

10,000

1,000

100

f = 1 MHz

iss

0.1

0.01

oss

rss

0.001

0.0001

0.001

0.01

0.1

-5

-10

-15

-20

-25

-30

-35

-40

Pulse Width - Seconds

V_DS- Volts

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXTT10P60

IXTH10P60

Fig. 13. Forward-Bias Safe Operating Area

@ T = 25ºC

Fig. 14. Forward-Bias Safe Operating Area

@ T = 75ºC

-100

100

Limit

100µs

DS(on)

100µs

1ms

10ms

100ms

T_J= 150ºC

T_C= 25ºC

T_C= 75ºC

Single Pulse

0.1

100

1000

100

1000

V_DS- Volts

IXYS REF: T_10P60(7X-L69)9-17-12

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