IXTK102N65X2 [LITTELFUSE]

Power Field-Effect Transistor,;


型号：	IXTK102N65X2
厂家：	LITTELFUSE
描述：	Power Field-Effect Transistor,
文件：	总6页 (文件大小：213K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

X2-Class

Power MOSFET

V_DSS= 650V

I_D25= 102A

R_DS(on) 30m

IXTK102N65X2

IXTX102N65X2

N-Channel Enhancement Mode

Avalanche Rated

TO-264P (IXTK)

Symbol

Test Conditions

Maximum Ratings

V_DSS

V_DGR

T_J= 25C to 150C

T_J= 25C to 150C, R_GS= 1M

650

Tab

V_GSS

V_GSM

Continuous

Transient

 30

 40

PLUS247 (IXTX)

I_D25

I_DM

T_C= 25C

T_C= 25C, Pulse Width Limited by T_JM

102

204

I_A

E_AS

T_C= 25C

Tab

P_D

T_C= 25C

1040

dv/dt

I_S I_DM, V_DD V_DSS, T_J 150°C

V/ns

G = Gate

S = Source

= Drain

T_J

T_JM

T_stg

-55 ... +150

150

-55 ... +150

C

Tab = Drain

Features

T_L

T_SOLD

Maximum Lead Temperature for Soldering

Plastic Body for 10s

300

260

°C



International Standard Packages

Low Q_G

Avalanche Rated



M_d

F_C

Mounting Torque (TO-264P)

Mounting Force (PLUS247)

1.13/10

Nm/lb.in

N/lb

20..120 /4.5..27

Low Package Inductance

Weight

TO-264P

PLUS247

Advantages



High Power Density

Easy to Mount

Space Savings



Symbol

Test Conditions

Characteristic Values



(T_J= 25C Unless Otherwise Specified)

Min.

Typ.

Max.

BV_DSS

V_GS(th)

I_GSS

V_GS= 0V, I_D= 1mA

V_DS= V_GS, I_D= 250μA

V_GS=  30V, V_DS= 0V

V_DS= V_DSS, V_GS= 0V

650

Applications

3.0

5.0



Switch-Mode and Resonant-Mode

100 nA

Power Supplies



DC-DC Converters

PFC Circuits

AC and DC Motor Drives

Robotics and Servo Controls

I_DSS

25 A

350 A



T_J= 125C



R_DS(on)

V_GS= 10V, I_D= 0.5 • I_D25, Note 1

30 m

DS100655B(4/18)

IXTK102N65X2

IXTX102N65X2

Symbol

Test Conditions

Characteristic Values

TO-264P Outline

(T_J= 25C, Unless Otherwise Specified)

Min.

Typ.

Max

g_fs

V_DS= 10V, I_D= 0.5 • I_D25, Note 1

Gate Input Resistance

R_Gi

0.7



C_iss

C_oss

C_rss

10.9

6100

12.6

V_GS= 0V, V_DS= 25V, f = 1MHz

Effective Output Capacitance

C_o(er)

C_o(tr)

367

Energy related

Time related

V_GS= 0V

V_DS= 0.8 • V_DSS

1420

Terminals:

= Gate

2,4 = Drain

= Source

t_d(on)

t_r

t_d(off)

t_f

Resistive Switching Times

_GS= 10V, V_DS= 0.5 • V_DSS, I_D= 0.5 • I_D25

R_G= 2(External)

Q_g(on)

Q_gs

152

V_GS= 10V, V_DS= 0.5 • V_DSS, I_D= 0.5 • I_D25

Q_gd

R_thJC

R_thCS

0.12 C/W

C/W

0.15

Source-Drain Diode

PLUS247^TMOutline

Symbol

Test Conditions

Characteristic Values

(T_J= 25C, Unless Otherwise Specified)

Min.

Typ.

Max.

102

408

1.4

I_S

V_GS= 0V

I_SM

V_SD

Repetitive, Pulse Width Limited by T_JM

I_F= I_S, V_GS= 0V, Note 1

t_rr

450

11.7

μC

I_F= 51A, -di/dt = 100A/s

Q_RM

I_RM



V_R= 100V, V_GS= 0V

Terminals: 1 - Gate

2,4 - Drain

3 - Source

Note 1. Pulse test, t  300s, duty cycle, d 2%.

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXYS MOSFETs and IGBTs are covered

by one or more of the following U.S. patents: 4,860,072 5,017,508

4,881,106 5,034,796

4,835,592 4,931,844

5,049,961

5,063,307

5,187,117

5,237,481

5,381,025

5,486,715

6,162,665

6,259,123 B1

6,306,728 B1

6,404,065 B1 6,683,344

6,534,343

6,583,505

6,727,585

6,710,405 B2 6,759,692

6,710,463

7,005,734 B2 7,157,338B2

7,063,975 B2

6,771,478 B2 7,071,537

IXTK102N65X2

IXTX102N65X2

Fig. 1. Output Characteristics @ T_J= 25^oC

Fig. 2. Extended Output Characteristics @ T_J= 25^oC

110

100

240

200

160

120

= 10V

0.5

1.5

2.5

3.5

V_DS- Volts

Fig. 4. R_DS(on)Normalized to I_D= 51A Value vs.

Junction Temperature

Fig. 3. Output Characteristics @ T_J= 125^oC

110

100

3.5

3.0

2.5

2.0

1.5

1.0

0.5

0.0

= 10V

= 102A

= 51A

-50

-25

100

125

150

V_DS- Volts

T_J- Degrees Centigrade

Fig. 5. R_DS(on)Normalized to I_D= 51A Value vs.

Drain Current

Fig. 6. Normalized Breakdown & Threshold Voltages

vs. Junction Temperature

4.5

4.0

3.5

3.0

2.5

2.0

1.5

1.0

0.5

1.2

1.1

1.0

0.9

0.8

0.7

0.6

= 10V

DSS

= 125^oC

T = 25^oC

GS(th)

-60

-40

-20

100

120

140

160

120

160

200

240

I_D- Amperes

T_J- Degrees Centigrade

IXTK102N65X2

IXTX102N65X2

Fig. 8. Input Admittance

Fig. 7. Maximum Drain Current vs. Case Temperature

110

100

160

140

120

100

= 125^oC

25^oC

- 40^oC

-50

-25

100

125

150

3.0

3.5

4.0

4.5

5.0

5.5

6.0

6.5

7.0

T_C- Degrees Centigrade

V_GS- Volts

Fig. 10. Forward Voltage Drop of Intrinsic Diode

Fig. 9. Transconductance

160

300

250

200

150

100

= - 40^oC

140

120

100

25^oC

125^oC

= 125^oC

= 25^oC

100

120

140

160

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.1

1.2

1.3

1.4

I_D- Amperes

V_SD- Volts

Fig. 12. Capacitance

Fig. 11. Gate Charge

100,000

10,000

1,000

100

= 325V

iss

= 51A

= 10mA

oss

= 1 MHz

rss

100

1000

100

120

140

160

V_DS- Volts

Q_G- NanoCoulombs

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXTK102N65X2

IXTX102N65X2

Fig. 13. Output Capacitance Stored Energy

Fig. 14. Forward-Bias Safe Operating Area

1000

100

Limit

)

DS(

25μs

100μs

T = 150^oC

1ms

= 25^oC

10ms

Single Pulse

0.1

100

200

300

400

500

600

100

1,000

V_DS- Volts

Fig. 15. Maximum Transient Thermal Impedance

0.1

0.01

0.001

0.00001

0.0001

0.001

0.01

0.1

Pulse Width - Seconds

IXYS REF: T_102N65X2(X8-R4T50) 6-16-15-A

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