IXTP150N15X4 [LITTELFUSE]
Power Field-Effect Transistor,;
| 型号： | IXTP150N15X4 |
| 厂家： | 
LITTELFUSE |
| 描述： | Power Field-Effect Transistor, |
| 文件： | 总7页 (文件大小：296K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Advance Technical Information
X4-Class
VDSS = 150V
ID25 = 150A
RDS(on) 7.2m
IXTP150N15X4
IXTH150N15X4
Power MOSFETTM
N-Channel Enhancement Mode
Avalanche Rated
TO-220 (IXTP)
Symbol
VDSS
Test Conditions
Maximum Ratings
G
D
S
TJ = 25C to 175C
150
150
V
V
D (Tab)
VDGR
TJ = 25C to 175C, RGS = 1M
TO-247 (IXTH)
VGSS
VGSM
Continuous
Transient
20
30
V
V
ID25
IDM
TC = 25C
TC = 25C, Pulse Width Limited by TJM
150
260
A
A
G
D
D (Tab)
S
IA
TC = 25C
TC = 25C
75
1
A
J
G = Gate
S = Source
D
= Drain
EAS
Tab = Drain
dv/dt
PD
IS IDM, VDD VDSS, TJ 150°C
TC = 25C
10
V/ns
W
480
TJ
-55 ... +175
175
C
C
C
TJM
Tstg
-55 ... +175
Features
TL
TSOLD
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
300
260
°C
°C
International Standard Packages
Low RDS(ON) and QG
Avalanche Rated
Md
Mounting Torque
1.13 / 10
Nm/lb.in
Weight
TO-220
TO-247
3
6
g
g
Low Package Inductance
Advantages
High Power Density
Easy to Mount
Space Savings
Symbol
Test Conditions
Characteristic Values
(TJ = 25C, Unless Otherwise Specified)
Min.
Typ.
Max.
BVDSS
VGS(th)
IGSS
VGS = 0V, ID = 250μA
VDS = VGS, ID = 250μA
VGS = 20V, VDS = 0V
VDS = VDSS, VGS = 0V
150
V
V
Applications
2.5
4.5
Switch-Mode and Resonant-Mode
100 nA
Power Supplies
DC-DC Converters
PFC Circuits
AC and DC Motor Drives
IDSS
10 A
500 A
TJ = 150C
Robotics and Servo Controls
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Note 1
6.2
7.2 m
DS100904A(6/18)
© 2018 IXYS CORPORATION, All Rights Reserved.
IXTP150N15X4
IXTH150N15X4
Symbol
Test Conditions
Characteristic Values
(TJ = 25C, Unless Otherwise Specified)
Min.
Typ.
Max
gfs
VDS = 10V, ID = 60A, Note 1
Gate Input Resistance
70
120
1.3
S
RGi
Ciss
Coss
Crss
5500
900
4
pF
pF
pF
VGS = 0V, VDS = 25V, f = 1MHz
Effective Output Capacitance
Co(er)
Co(tr)
660
pF
pF
Energy related
Time related
VGS = 0V
DS = 0.8 • VDSS
2100
V
td(on)
tr
td(off)
tf
23
5
ns
ns
ns
ns
Resistive Switching Times
GS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
V
60
6
RG = 2 (External)
Qg(on)
Qgs
105
30
nC
nC
nC
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgd
28
RthJC
RthCS
0.31 C/W
TO-220
TO-247
0.50
0.21
C/W
C/W
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25C, Unless Otherwise Specified)
Min.
Typ.
Max
IS
VGS = 0V
150
A
A
ISM
VSD
Repetitive, pulse Width Limited by TJM
IF = 100A, VGS = 0V, Note 1
600
1.4
V
trr
QRM
IRM
100
350
7
ns
IF = 75A, -di/dt = 100A/μs
nC
VR = 75V
A
Note 1. Pulse test, t 300s, duty cycle, d 2%.
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experi-
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,860,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123B1
6,306,728B1
6,404,065B1
6,534,343
6,583,505
6,683,344
6,710,405B2 6,759,692
6,710,463
6,727,585
7,005,734B2 7,157,338B2
7,063,975B2
6,771,478B2 7,071,537
IXTP150N15X4
IXTH150N15X4
Fig. 2. Extended Output Characteristics @ TJ = 25oC
Fig. 1. Output Characteristics @ TJ = 25oC
500
450
400
350
300
250
200
150
100
50
V
= 10V
V
= 10V
8V
GS
GS
140
120
100
80
7V
9V
8V
7V
6V
5V
60
40
6V
5V
20
0
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
0
5
10
15
20
25
VDS - Volts
VDS - Volts
Fig. 4. RDS(on) Normalized to ID = 75A Value vs.
Junction Temperature
Fig. 3. Output Characteristics @ TJ = 150oC
3.0
2.6
2.2
1.8
1.4
1.0
0.6
0.2
V
= 10V
8V
140
120
100
80
GS
V
= 10V
GS
7V
6V
I
= 150A
D
I
= 75A
D
60
5V
4V
40
20
0
-50
-25
0
25
50
75
100
125
150
175
0
0.5
1
1.5
2
2.5
3
VDS - Volts
TJ - Degrees Centigrade
Fig. 5. RDS(on) Normalized to ID = 75A Value vs.
Drain Current
Fig. 6. Normalized Breakdown & Threshold Voltages
vs. Junction Temperature
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
V
= 10V
GS
BV
DSS
o
T
J
= 150 C
o
T
J
= 25 C
V
GS(th)
100
-60
-40
-20
0
20
40
60
80
120
140
160
0
50
100
150
200
250
300
350
400
450
500
TJ - Degrees Centigrade
ID - Amperes
© 2018 IXYS CORPORATION, All Rights Reserved.
IXTP150N15X4
IXTH150N15X4
Fig. 7. Maximum Drain Current vs. Case Temperature
Fig. 8. Input Admittance
160
140
120
100
80
180
160
140
120
100
80
V
= 10V
DS
60
o
60
T
J
= 150 C
o
40
25 C
40
o
- 40 C
20
20
0
0
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
-50
-25
0
25
50
75
100
125
150
175
TC - Degrees Centigrade
VGS - Volts
Fig. 10. Forward Voltage Drop of Intrinsic Diode
Fig. 9. Transconductance
500
450
400
350
300
250
200
150
100
50
220
200
180
160
140
120
100
80
o
V
= 10V
DS
T = - 40 C
J
o
25 C
o
150 C
o
60
T
J
= 150 C
o
40
T = 25 C
J
20
0
0
0
20
40
60
80
100
120
140
160
180
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
ID - Amperes
VSD - Volts
Fig. 12. Capacitance
Fig. 11. Gate Charge
100,000
10,000
1,000
100
10
9
8
7
6
5
4
3
2
1
0
V
= 75V
DS
I
I
= 75A
D
G
C
= 10mA
iss
C
C
oss
rss
10
= 1 MHz
f
1
0
10
20
30
40
50
60
70
80
90
100
110
1
10
100
1,000
VDS - Volts
QG - NanoCoulombs
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTP150N15X4
IXTH150N15X4
Fig. 13. Output Capacitance Stored Energy
Fig. 14. Forward-Bias Safe Operating Area
1000
100
10
8
7
6
5
4
3
2
1
0
R
Limit
)
DS(
on
25μs
100μs
1ms
1
o
10ms
T
J
= 175 C
o
DC
T
C
= 25 C
Single Pulse
0.1
0
20
40
60
80
100
120
140
1
10
100
1,000
VDS - Volts
VDS - Volts
1
Fig. 15. Maximum Transient Thermal Impedance
aaaaa
0.5
0.1
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
1
Pulse Width - Second
© 2018 IXYS CORPORATION, All Rights Reserved.
IXYS REF: T_150N15X4 (17) 6-20-18
IXTP150N15X4
IXTH150N15X4
TO-220 Outline
1 - Gate
2,4 - Drain
3 - Source
TO-247 Outline
1 - Gate
2,4 - Drain
3 - Source
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.
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