IXTP90N20X3 [LITTELFUSE]
Power Field-Effect Transistor,;
| 型号： | IXTP90N20X3 |
| 厂家： | 
LITTELFUSE |
| 描述： | Power Field-Effect Transistor, |
| 文件： | 总4页 (文件大小：253K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Advance Technical Information
X3-Class
VDSS = 200V
ID25 = 90A
RDS(on) 12m
IXTP90N20X3
IXTH90N20X3
Power MOSFETTM
N-Channel Enhancement Mode
Avalanche Rated
TO-220
(IXTP)
G
D
S
D (Tab)
Symbol
VDSS
Test Conditions
Maximum Ratings
TO-247
(IXTH)
TJ = 25C to 175C
200
200
V
V
VDGR
TJ = 25C to 175C, RGS = 1M
VGSS
VGSM
Continuous
Transient
20
30
V
V
G
D
D (Tab)
S
ID25
IDM
TC = 25C
TC = 25C, Pulse Width Limited by TJM
90
A
A
220
G = Gate
S = Source
D
= Drain
Tab = Drain
IA
TC = 25C
TC = 25C
45
1
A
J
EAS
dv/dt
PD
IS IDM, VDD VDSS, TJ 150°C
TC = 25C
20
V/ns
W
390
Features
TJ
-55 ... +175
175
C
C
C
TJM
Tstg
International Standard Packages
Low RDS(ON) and QG
-55 ... +175
TL
TSOLD
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
300
260
°C
°C
Avalanche Rated
Low Package Inductance
Md
Mounting Torque
1.13 / 10
Nm/lb.in
Advantages
Weight
TO-220
TO-247
3
6
g
g
High Power Density
Easy to Mount
Space Savings
Applications
Symbol
Test Conditions
Characteristic Values
(TJ = 25C, Unless Otherwise Specified)
Min.
Typ.
Max.
Switch-Mode and Resonant-Mode
Power Supplies
DC-DC Converters
PFC Circuits
AC and DC Motor Drives
Robotics and Servo Controls
BVDSS
VGS(th)
IGSS
VGS = 0V, ID = 250μA
VDS = VGS, ID = 250μA
VGS = 20V, VDS = 0V
VDS = VDSS, VGS = 0V
200
V
V
2.5
4.5
100 nA
A
IDSS
5
TJ = 125C
100 A
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Note 1
10
12 m
DS100867B(4/18)
© 2018 IXYS CORPORATION, All Rights Reserved
IXTP90N20X3
IXTH90N20X3
Symbol
Test Conditions
Characteristic Values
(TJ = 25C, Unless Otherwise Specified)
Min.
Typ.
Max
gfs
VDS = 10V, ID = 0.5 • ID25, Note 1
Gate Input Resistance
60
100
S
RGi
1.4
Ciss
Coss
Crss
5420
930
4
pF
pF
pF
VGS = 0V, VDS = 25V, f = 1MHz
Effective Output Capacitance
Co(er)
Co(tr)
420
pF
pF
Energy related
Time related
VGS = 0V
VDS = 0.8 • VDSS
1300
td(on)
tr
td(off)
tf
22
26
62
13
ns
ns
ns
ns
Resistive Switching Times
GS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
V
RG = 5 (External)
Qg(on)
Qgs
78
23
22
nC
nC
nC
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgd
RthJC
RthCS
0.32 C/W
TO-220
TO-247
0.50
0.21
C/W
C/W
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25C, Unless Otherwise Specified)
Min.
Typ.
Max
IS
VGS = 0V
90
A
A
ISM
VSD
Repetitive, pulse Width Limited by TJM
IF = IS, VGS = 0V, Note 1
360
1.4
V
trr
QRM
IRM
124
650
10.5
ns
IF = 45A, -di/dt = 100A/μs
nC
VR = 100V
A
Note 1. Pulse test, t 300s, duty cycle, d 2%.
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experi-
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,860,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123B1
6,306,728B1
6,404,065B1
6,534,343
6,583,505
6,683,344
6,710,405B2 6,759,692
6,710,463
6,727,585
7,005,734B2 7,157,338B2
7,063,975B2
6,771,478B2 7,071,537
IXTP90N20X3
IXTH90N20X3
TO-220 Outline
1 - Gate
2,4 - Drain
3 - Source
TO-247 Outline
1 - Gate
2,4 - Drain
3 - Source
© 2018 IXYS CORPORATION, All Rights Reserved
IXYS REF: T_90N20X3(25-S202) 5-31-17-A
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.
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