IXTT170N10P-TR [LITTELFUSE]

Power Field-Effect Transistor,;
IXTT170N10P-TR
型号: IXTT170N10P-TR
厂家: LITTELFUSE    LITTELFUSE
描述:

Power Field-Effect Transistor,

文件: 总6页 (文件大小:166K)
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IXTT1N100

High Voltage MOSFET

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14 IXYS

IXTT1N250HV

Power Field-Effect Transistor,

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3 LITTELFUSE

IXTT1N250HV-TRL

Power Field-Effect Transistor,

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0 IXYS

IXTT1N300P3HV

Power Field-Effect Transistor

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0 IXYS

IXTT1N450HV

High Voltage Power MOSFET

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40 IXYS

IXTT1N450HV

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

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1 IXYS

IXTT20N50D

Power Field-Effect Transistor, 20A I(D), 500V, 0.33ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, PLASTIC, TO-268, 3 PIN

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2 IXYS

IXTT20N50D

Power Field-Effect Transistor, 20A I(D), 500V, 0.33ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, PLASTIC, TO-268, 3 PIN

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1 LITTELFUSE

IXTT20P50P

Power Field-Effect Transistor,

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0 LITTELFUSE

IXTT20P50P

Power Field-Effect Transistor, 20A I(D), 500V, 0.45ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, TO-268, 3 PIN

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0 IXYS

IXTT21N50Q

Power Field-Effect Transistor, 21A I(D), 500V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, PLASTIC, TO-268, 3 PIN

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0 LITTELFUSE

IXTT21N50Q

Power Field-Effect Transistor, 21A I(D), 500V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, PLASTIC, TO-268, 3 PIN

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0 IXYS

IXTT22N60P

Power Field-Effect Transistor, 22A I(D), 600V, 0.33ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, TO-268, 3 PIN

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0 IXYS

IXTT240N15X4HV

Power Field-Effect Transistor,

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1 LITTELFUSE

IXTT24N50Q

Power Field-Effect Transistor, 24A I(D), 500V, 0.24ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, PLASTIC, TO-268, 3 PIN

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0 IXYS