IXYF30N450 [LITTELFUSE]

Insulated Gate Bipolar Transistor,;


型号：	IXYF30N450
厂家：	LITTELFUSE
描述：	Insulated Gate Bipolar Transistor, 栅
文件：	总5页 (文件大小：189K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Advance Technical Information

High Voltage XPT^TMIGBT

V_CES= 4500V

I_C110= 17A

V_CE(sat) 3.9V

IXYF30N450

(Electrically Isolated Tab)

ISOPLUS i4-Pak^TM

Symbol

V_CES

Test Conditions

Maximum Ratings

T_C= 25°C to 150°C

4500

V_CGR

T_J= 25°C to 150°C, R_GE= 1M

V_GES

V_GEM

Continuous

Transient

± 20

± 30

Isolated Tab

I_C25

I_C110

I_CM

T_C= 25°C

1 = Gate

2 = Emitter

5 = Collector

T_C= 110°C

T_C= 25°C, 1ms

190

SSOA

(RBSOA)

V_GE= 15V, T_VJ= 125°C, R_G= 15

Clamped Inductive Load

I_CM= 90

3600

P_C

T_C= 25°C

230

Features

T_J

-55 ... +150

150

°C



Silicon Chip on Direct-Copper Bond

(DCB) Substrate

Isolated Mounting Surface

T_JM

T_stg

-55 ... +150



4000V~ Electrical Isolation

T_L

T_SOLD

1.6mm (0.062 in.) from Case for 10s

Plastic Body for 10 seconds

300

260

°C



High Blocking Voltage



High Peak Current Capability

Low Saturation Voltage

F_C

Mounting Force

20..120 / 4.5..27

Nm/lb.in.

V_ISOL

Weight

50/60Hz, 1 Minute

4000

Advantages



Low Gate Drive Requirement

High Power Density



Symbol Test Conditions

(T_J= 25°C Unless Otherwise Specified)

Characteristic Values

Applications

Min.

4500

3.0

Typ.

Max.



BV_CES

V_GE(th)

I_CES

I_C= 250μA, V_GE= 0V

I_C= 250μA, V_CE= V_GE

V_CE= V_CES, V_GE= 0V

Switch-Mode and Resonant-Mode

Power Supplies

Uninterruptible Power Supplies (UPS)

Laser Generators

Capacitor Discharge Circuits

5.0



25 μA

μA



Note 2, T_J= 100°C

100



I_GES

V_CE= 0V, V_GE= ± 25V

±200 nA

AC Switches

V_CE(sat)

I_C= 30A, V_GE= 15V, Note 1

3.2

4.5

3.9

T_J= 125°C

DS100569(11/13)

IXYF30N450

ISOPLUS i4-Pak^TM(HV) Outline

Symbol Test Conditions

(T_J= 25°C Unless Otherwise Specified)

Characteristic Values

Min.

Typ.

Max.

g_fS

I_C= 30A, V_CE= 10V, Note 1

V_CE= 25V, V_GE= 0V, f = 1MHz

C_ies

C_oes

C_res

1840

Q_g

Q_ge

Q_gc

I_C= 30A, V_GE= 15V, V_CE= 1000V

t_d(on)

t_r

t_d(off)

t_f

t_d(on)

t_r

t_d(off)

t_f

318

Resistive Switching Times, T_J= 25°C

Pin 1 = Gate

I_C= 30A, V_GE= 15V

Pin2 = Emitter

Pin 3 = Collector

Tab 4 = Isolated

168

V_CE= 960V, R_G= 15

1220

590

Resistive Switching Times, T_J= 125°C

I_C= 30A, V_GE= 15V

180

V_CE= 960V, R_G= 15

1365

R_thJC

R_thCS

0.54 °C/W

°C/W

0.15

Notes:

1. Pulse test, t < 300s, duty cycle, d < 2%.

2. Device must be heatsunk for high-temperature leakage current

measurements to avoid thermal runaway.

ADVANCE TECHNICAL INFORMATION

The product presented herein is under development. The Technical Specifications offered are derived

from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute

a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test

conditions, and dimensions without notice.

IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.

IXYS MOSFETs and IGBTs are covered

by one or more of the following U.S. patents: 4,860,072 5,017,508

4,881,106 5,034,796

4,835,592 4,931,844

5,049,961

5,063,307

5,187,117

5,237,481

5,381,025

5,486,715

6,162,665

6,259,123 B1

6,306,728 B1

6,404,065 B1 6,683,344

6,534,343

6,583,505

6,727,585

6,710,405 B2 6,759,692

6,710,463

7,005,734 B2 7,157,338B2

7,063,975 B2

6,771,478 B2 7,071,537

IXYF30N450

Fig. 1. Output Characteristics @ T_J= 25ºC

Fig. 2. Extended Output Characteristics @ T_J= 25ºC

280

240

200

160

120

= 25V

19V

15V

13V

11V

23V

21V

19V

17V

15V

13V

11V

0.5

1.5

2.5

3.5

4.5

V_CE- Volts

Fig. 4. Dependence of V_CE(sat)on

Junction Temperature

Fig. 3. Output Characteristics @ T_J= 125ºC

2.4

2.2

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

= 25V

19V

15V

13V

11V

= 15V

= 60A

= 30A

= 15A

-50

-25

100

125

150

V_CE- Volts

T_J- Degrees Centigrade

Fig. 5. Collector-to-Emitter Voltage

vs. Gate-to-Emitter Voltage

Fig. 6. Input Admittance

= 25ºC

= - 40ºC

25ºC

125ºC

= 60A

30A

15A

3.5

4.5

5.5

6.5

7.5

8.5

9.5

V_GE- Volts

IXYF30N450

Fig. 7. Transconductance

Fig. 8. Gate Charge

V_CE= 1000V

_C= 30A

I_G= 10mA

= - 40ºC

25ºC

125ºC

I_C- Amperes

Q_G- NanoCoulombs

Fig. 10. Reverse-Bias Safe Operating Area

Fig. 9. Capacitance

10,000

100

= 1 MHz

ies

1,000

oes

100

= 125ºC

= 15Ω

res

dv / dt < 10V / ns

500

1000

1500

2000

2500

3000

3500

4000

4500

500

V_CE- Volts

Fig. 11. Maximum Transient Thermal Impedance

0.1

0.01

0.0001

0.001

0.01

0.1

Pulse Width - Seconds

IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.

IXYS REF: Y_30N450(H7-645) 10-31-13

Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently

evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,

and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.

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