IXYH50N65C3 [LITTELFUSE]
Insulated Gate Bipolar Transistor,;
| 型号： | IXYH50N65C3 |
| 厂家： | 
LITTELFUSE |
| 描述： | Insulated Gate Bipolar Transistor, 栅 |
| 文件： | 总7页 (文件大小：270K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Preliminary Technical Information
XPTTM 650V IGBT
GenX3TM
VCES = 650V
IC110 = 50A
VCE(sat) 2.10V
tfi(typ) = 26ns
IXYA50N65C3
IXYP50N65C3
IXYH50N65C3
Extreme Light Punch Through
IGBT for 20-60kHz Switching
TO-263 (IXYA)
G
E
C (Tab)
Symbol
Test Conditions
Maximum Ratings
TO-220 (IXYP)
VCES
VCGR
TJ = 25°C to 175°C
650
650
V
V
TJ = 25°C to 175°C, RGE = 1M
VGES
VGEM
Continuous
Transient
±20
±30
V
V
G
C
C (Tab)
E
IC25
IC110
ICM
TC = 25°C
TC = 110°C
TC = 25°C, 1ms
132
50
250
A
A
A
TO-247 AD (IXYH)
IA
EAS
TC = 25°C
TC = 25°C
25
A
400
mJ
SSOA
VGE = 15V, TVJ = 150°C, RG = 5
Clamped Inductive Load
ICM = 100
A
μs
W
G
C
E
C (Tab)
(RBSOA)
VCE VCES
tsc
VGE = 15V, VCE = 360V, TJ = 150°C
8
G = Gate
E = Emitter
C
= Collector
Tab = Collector
(SCSOA)
RG = 82, Non Repetitive
PC
TC = 25°C
600
Features
TJ
TJM
Tstg
-55 ... +175
175
°C
°C
°C
Optimized for 20-60kHz Switching
Square RBSOA
Avalanche Rated
Short Circuit Capability
International Standard Packages
-55 ... +175
TL
TSOLD
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
300
260
°C
°C
FC
Md
Mounting Force (TO-263)
Mounting Torque (TO-247 & TO-220)
10..65 / 2.2..14.6
1.13 / 10
N/lb
Nm/lb.in
Advantages
Weight
TO-263
TO-220
TO-247
2.5
3.0
6.0
g
g
g
High Power Density
Extremely Rugged
Low Gate Drive Requirement
Applications
Symbol
Test Conditions
Characteristic Values
(TJ = 25C, Unless Otherwise Specified)
Min.
650
3.5
Typ.
Max.
Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
BVCES
VGE(th)
ICES
IC = 250A, VGE = 0V
IC = 250A, VCE = VGE
VCE = VCES, VGE = 0V
V
V
6.0
15 A
250 A
TJ = 150C
TJ = 150C
IGES
VCE = 0V, VGE = 20V
100 nA
VCE(sat)
IC = 36A, VGE = 15V, Note 1
1.73
2.10
2.10
V
V
High Frequency Power Inverters
© 2014 IXYS CORPORATION, All Rights Reserved
DS100552C(9/14)
IXYA50N65C3 IXYP50N65C3
IXYH50N65C3
Symbol Test Conditions
(TJ = 25°C Unless Otherwise Specified)
Characteristic Values
TO-220 Outline
Min.
Typ.
Max.
gfs
IC = 36A, VCE = 10V, Note 1
18
30
S
Cies
Coes
Cres
2290
135
50
pF
pF
pF
VCE = 25V, VGE = 0V, f = 1MHz
Qg(on)
Qge
Qgc
86
14
40
nC
nC
nC
IC = 36A, VGE = 15V, VCE = 0.5 • VCES
td(on)
tri
Eon
td(off)
tfi
20
36
ns
ns
Inductive load, TJ = 25°C
IC = 36A, VGE = 15V
0.80
90
mJ
Pins: 1 - Gate
3 - Emitter
2 - Collector
ns
ns
VCE = 400V, RG = 5
26
Note 2
Eof
0.47
0.80
mJ
f
td(on)
tri
19
37
ns
ns
Inductive load, TJ = 150°C
IC = 36A, VGE = 15V
Eon
td(off)
tfi
1.60
113
32
mJ
ns
VCE = 400V, RG = 5
ns
Note 2
Eoff
0.70
mJ
RthJC
RthCS
RthCS
0.25 °C/W
°C/W
TO-220
TO-247
0.50
0.21
TO-247 Outline
°C/W
Notes:
1. Pulse test, t 300μs, duty cycle, d 2%.
2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG.
TO-263 Outline
1 - Gate
2,4 - Collector
3 - Emitter
1 = Gate
2 = Collector
3 = Emitter
4 = Collector
PRELIMANARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experi-
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,860,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
IXYA50N65C3 IXYP50N65C3
IXYH50N65C3
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
Fig. 1. Output Characteristics @ TJ = 25ºC
280
240
200
160
120
80
70
60
50
40
30
20
10
0
V
= 15V
V
= 15V
GE
14V
GE
13V
12V
11V
10V
9V
13V
12V
11V
8V
10V
9V
7V
6V
40
8V
7V
0
0
0.5
1
1.5
2
2.5
3
0
5
10
15
20
25
30
VCE (V)
VCE (V)
Fig. 4. Dependence of VCE(sat) on
Junction Temperature
Fig. 3. Output Characteristics @ TJ = 150ºC
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
70
60
50
40
30
20
10
0
V
= 15V
GE
V
= 15V
10V
9V
GE
13V
11V
I
= 72A
C
8V
7V
I
= 36A
C
I
= 18A
C
6V
5V
-50
-25
0
25
50
75
100
125
150
175
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
VCE - Volts
TJ (ºC)
Fig. 5. Collector-to-Emitter Voltage vs.
Gate-to-Emitter Voltage
Fig. 6. Input Admittance
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
100
90
80
70
60
50
40
30
20
10
0
T
J
= 25ºC
I
= 72A
C
T
= 150ºC
25ºC
J
- 40ºC
36A
18A
4
5
6
7
8
9
10
7
8
9
10
11
12
13
14
15
VGE (V)
VGE (V)
© 2014 IXYS CORPORATION, All Rights Reserved
IXYA50N65C3 IXYP50N65C3
IXYH50N65C3
Fig. 8. Gate Charge
Fig. 7. Transconductance
16
14
12
10
8
45
40
35
30
25
20
15
10
5
T
J
= - 40ºC
VCE = 325V
IC = 36A
IG = 10mA
25ºC
150ºC
6
4
2
0
0
0
10
20
30
40
50
60
70
80
90
100
0
10
20
30
40
50
60
70
80
90
IC (A)
QG (nC)
Fig. 9. Capacitance
Fig. 10. Reverse-Bias Safe Operating Area
10,000
1,000
100
= 1 MHz
f
100
80
C
ies
60
C
oes
res
40
T
J
= 150ºC
20
C
R
G
= 5
Ω
dv / dt < 10V / ns
10
0
0
5
10
15
20
25
30
35
40
100
200
300
500
600
700
400
VCE (V)
VCE (V)
Fig. 11. Forward-Bias Safe Operating Area
Fig. 12. Maximum Transient Thermal Impedance
a
a s s s
1000
100
10
0.4
0.1
V
Limit
CE(sat)
25µs
100µs
1ms
1
T = 175ºC
J
T
C
= 25ºC
10ms
Single Pulse
DC
0.1
0.01
1
10
100
1000
0.00001
0.0001
0.001
0.01
0.1
1
VDS (V)
Pulse Width - Second
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYA50N65C3 IXYP50N65C3
IXYH50N65C3
Fig. 14. Inductive Switching Energy Loss vs.
Fig. 13. Inductive Switching Energy Loss vs.
Gate Resistance
Collector Current
2.4
2.0
1.6
1.2
0.8
0.4
0.0
6
3.2
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0.0
8
7
6
5
4
3
2
1
0
E
R
E
on - - - -
E
E
off
on - - - -
off
5
4
3
2
1
0
= 5
V
= 15V
GE
Ω ,
G
T
J
= 150ºC , V = 15V
GE
V
= 400V
CE
V
= 400V
CE
I
= 72A
C
T
J
= 150ºC
I
= 36A
35
C
T
= 25ºC
40
J
15
20
25
30
35
45
50
55
60
65
70
75
5
25
15
10
15
20
25
30
40
45
50
55
RG (Ω)
IC (A)
Fig. 16. Inductive Turn-off Switching Times vs.
Gate Resistance
Fig. 15. Inductive Switching Energy Loss vs.
Junction Temperature
120
100
80
60
40
20
0
480
400
320
240
160
80
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0.0
7
6
5
4
3
2
1
0
E
E
on - - - -
off
t f i
t
d(off) - - - -
R
= 5
VGE = 15V
Ω ,
G
T
J
= 150ºC, V = 15V
GE
VCE = 400V
V
= 400V
CE
I
= 72A
I
= 72A
C
C
I
= 36A
C
IC = 36A
0
5
10
15
20
25
30
35
40
45
50
55
50
75
100
125
150
RG (Ω)
TJ (ºC)
Fig. 18. Inductive Turn-off Switching Times vs.
Junction Temperature
Fig. 17. Inductive Turn-off Switching Times vs.
Collector Current
120
100
80
60
40
20
0
160
140
120
100
80
90
80
70
60
50
40
30
20
10
200
t f i
t
d(off) - - - -
t f i
t
d(off) - - - -
180
160
140
120
100
80
R
G
= 5 , V = 15V
Ω
GE
R
G
= 5 , V = 15V
Ω
GE
V
= 400V
CE
V
= 400V
CE
I
= 72A
C
T
= 150ºC
J
I
= 36A
C
T
J
= 25ºC
60
60
40
40
20
25
30
35
40
45
50
55
60
65
70
75
25
50
75
100
125
150
TJ (ºC)
IC (A)
© 2014 IXYS CORPORATION, All Rights Reserved
IXYA50N65C3 IXYP50N65C3
IXYH50N65C3
Fig. 20. Inductive Turn-on Switching Times vs.
Fig. 19. Inductive Turn-on Switching Times vs.
Gate Resistance
Collector Current
120
100
80
60
40
20
0
31
180
160
140
120
100
80
90
80
70
60
50
40
30
20
10
0
t r i
t
d(on) - - - -
t r i
td(on)
- - - -
28
25
22
19
16
13
T = 150ºC, V = 15V
J
R
G
= 5 , V = 15V
Ω
GE
GE
V
= 400V
V
= 400V
CE
CE
I
= 72A
C
T = 25ºC
J
I
= 36A
C
60
T = 150ºC
J
40
20
0
5
10
15
20
25
30
35
40
45
50
55
15
20
25
30
35
40
45
50
55
60
65
70
75
IC (A)
RG (Ω)
Fig. 21. Inductive Turn-on Switching Times vs.
Junction Temperature
Fig. 22. Maximum Peak Load Current vs. Frequency
100
90
80
70
60
50
40
30
20
10
140
120
100
80
25
24
23
22
21
20
19
18
t r i
t
d(on) - - - -
R
G
= 5 , V = 15V
Ω
GE
V
= 400V
CE
I
= 72A
C
Triangular Wave
60
T = 150ºC
J
T
C
= 75ºC
40
V
V
= 400V
= 15V
CE
GE
I
= 36A
C
20
R = 5ꢀ
G
Square Wave
Duty Cycle = 0.5
0
25
50
75
100
125
150
10
100
1000
TJ (ºC)
(kH)
fmax
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: IXY_50N65C3D1(5D) 9-03-14
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.
相关型号：
SI9130DB
5- and 3.3-V Step-Down Synchronous ConvertersWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9135LG-T1
SMBus Multi-Output Power-Supply ControllerWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9135LG-T1-E3
SMBus Multi-Output Power-Supply ControllerWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9135_11
SMBus Multi-Output Power-Supply ControllerWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9136_11
Multi-Output Power-Supply ControllerWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9130CG-T1-E3
Pin-Programmable Dual Controller - Portable PCsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9130LG-T1-E3
Pin-Programmable Dual Controller - Portable PCsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9130_11
Pin-Programmable Dual Controller - Portable PCsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9137
Multi-Output, Sequence Selectable Power-Supply Controller for Mobile ApplicationsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9137DB
Multi-Output, Sequence Selectable Power-Supply Controller for Mobile ApplicationsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9137LG
Multi-Output, Sequence Selectable Power-Supply Controller for Mobile ApplicationsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9122E
500-kHz Half-Bridge DC/DC Controller with Integrated Secondary Synchronous Rectification DriversWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
©2020 ICPDF网 联系我们和版权申明