M0280RJ250 [LITTELFUSE]
Rectifier Diode, 1 Phase, 1 Element, 280A, 2500V V(RRM), Silicon,;型号: | M0280RJ250 |
厂家: | LITTELFUSE |
描述: | Rectifier Diode, 1 Phase, 1 Element, 280A, 2500V V(RRM), Silicon, 软恢复二极管 |
文件: | 总9页 (文件大小:693K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Date:- 27 Nov, 2014
Data Sheet Issue:- 2
Soft Recovery Diode
Type M0280S/R#200 to M0280S/R#250
Absolute Maximum Ratings
MAXIMUM
LIMITS
VOLTAGE RATINGS
UNITS
VRRM
VRSM
Repetitive peak reverse voltage, (note 1)
Non-repetitive peak reverse voltage, (note 1)
2000-2500
V
V
2100-2600
MAXIMUM
LIMITS
OTHER RATINGS
UNITS
IF(AV)M
IF(AV)M
IF(RMS)
IF(d.c.)
IFSM
Maximum average forward current, Tsink=55°C, (note 2)
Maximum average forward current. Tsink=100°C, (note 2)
Nominal RMS forward current, Tsink=25°C, (note 2)
D.C. forward current, Tsink=25°C, (note 3)
280
A
A
123
573
A
453
A
Peak non-repetitive surge tp=10ms, VRM=60%VRRM, (note 3)
Peak non-repetitive surge tp=10ms, VRM10V, (note 3)
I2t capacity for fusing tp=10ms, VRM=60%VRRM, (note 3)
I2t capacity for fusing tp=10ms, VRM10V, (note 3)
Operating temperature range
4500
A
IFSM2
I2t
4950
A
100×103
123×103
-40 to +125
-40 to +150
A2s
A2s
°C
°C
I2t
Tj op
Tstg
Storage temperature range
Notes:-
1) De-rating factor of 0.13% per °C is applicable for Tj below 25°C.
2) single phase; 50Hz, 180° half-sinewave.
3) Half-sinewave, 125°C Tj initial.
Data Sheet. Types M0280S/R#200 to M0280S/R#250 Issue 2
Page 1 of 9
November 2014
Soft Recovery Diode Types M0280S/R#200 to M0280S/R#250
Characteristics
PARAMETER
MIN.
TYP. MAX. TEST CONDITIONS (Note 1)
UNITS
VFM
Maximum peak forward voltage
-
-
1.71 IFM=470A
V
VT0
rT
Threshold voltage
Slope resistance
-
-
-
-
1.28
0.92
V
m
VFRM
Maximum forward recovery voltage
-
51
-
di/dt = 400A/µs
V
IRRM
Qrr
Qra
Irm
Peak reverse current
-
-
-
-
-
-
20
730
342
265
-
Rated VRRM
mA
µC
µC
A
Recovered charge
-
-
Recovered charge, 50% chord
Reverse recovery current
Reverse recovery time
IFM=1000A, tp=200µs, di/dt=150A/µs,
Vr=50V.
-
trr
2.8
µs
RthJC
Thermal resistance, junction to case
Mounting torque
-
-
0.13
K/W
Nm
g
T
24.5
-
27
-
-
-
220
250
S/RJ housing option
S/RC housing option
Wt
Weight
-
Notes:-
1) Unless otherwise indicated Tj=125°C.
Data Sheet. Types M0280S/R#200 to M0280S/R#250 Issue 2
Page 2 of 9
November 2014
Soft Recovery Diode Types M0280S/R#200 to M0280S/R#250
Notes on Ratings and Characteristics
1.0 Voltage Grade Table
Voltage Grade
VRRM
(V)
VRSM
(V)
VR dc
(V)
20
25
2000
2500
2100
2600
1250
1500
2.0 De-rating Factor
A blocking voltage de-rating factor of 0.13% per °C is applicable to this device for Tj below 25°C.
3.0 ABCD Constants
These constants (applicable only over current range of VF characteristic in Figure 1) are the coefficients of
the expression for the forward characteristic given below:
VF A Bln(IF ) C IF D IF
where IF = instantaneous forward current.
4.0 Reverse recovery ratings
(i) Qra is based on 50% Irm chord as shown in Fig.(a) below.
(ii) Qrr is based on a 150s integration time.
150s
Qrr irr.dt
I.e.
0
t1
K Factor
(iii)
t2
Data Sheet. Types M0280S/R#200 to M0280S/R#250 Issue 2
Page 3 of 9
November 2014
Soft Recovery Diode Types M0280S/R#200 to M0280S/R#250
5.0 Reverse Recovery Loss
The following procedure is recommended for use where it is necessary to include reverse recovery loss.
From waveforms of recovery current obtained from a high frequency shunt (see Note 1) and reverse
voltage present during recovery, an instantaneous reverse recovery loss waveform must be constructed.
Let the area under this waveform be E joules per pulse. A new sink temperature can then be evaluated
from:
TSINK TJ (MAX ) E
Where k = 0.2314 (°C/W)/s
k f RthJK
E = Area under reverse loss waveform per pulse in joules (W.s.)
f = Rated frequency in Hz at the original sink temperature.
RthJK = d.c. thermal resistance (°C/W)
The total dissipation is now given by:
W W(original) E f
(tot)
NOTE 1 - Reverse Recovery Loss by Measurement
This device has a low reverse recovered charge and peak reverse recovery current. When measuring the
charge, care must be taken to ensure that:
(a) AC coupled devices such as current transformers are not affected by prior passage of high
amplitude forward current.
(b) A suitable, polarised, clipping circuit must be connected to the input of the measuring oscilloscope
to avoid overloading the internal amplifiers by the relatively high amplitude forward current signal.
(c) Measurement of reverse recovery waveform should be carried out with an appropriate critically
damped snubber, connected across diode anode to cathode. The formula used for the calculation of this
snubber is shown below:
Vr
di
CS
dt
R2 4
Where: Vr = Commutating source voltage
CS = Snubber capacitance
R = Snubber resistance
6.0 Snubber Components
When selecting snubber components, care must be taken not to use excessively large values of snubber
capacitor or excessively small values of snubber resistor. Such excessive component values may lead to
device damage due to the large resultant values of snubber discharge current. If required, please consult
the factory for assistance.
Data Sheet. Types M0280S/R#200 to M0280S/R#250 Issue 2
Page 4 of 9
November 2014
Soft Recovery Diode Types M0280S/R#200 to M0280S/R#250
7.0 Computer Modelling Parameters
7.1 Device Dissipation Calculations
VT 0 VT 0 4 ff 2 r WAV
T
IAV
2 ff 2 r
T
Where VT0 =1.28V, rT = 0.92m
ff = form factor (normally unity for fast diode applications)
T
WAV
R
th
T Tj(MAX ) TK
7.2 Calculation of VF using ABCD Coefficients
The forward characteristic IF Vs VF, on page 6 is represented in two ways;
(i)
(ii)
the well established VT0 and rT tangent used for rating purposes and
a set of constants A, B, C, and D forming the coefficients of the representative equation for VF in
terms of IF given below:
VF A Bln(IF ) C IF D IF
The constants, derived by curve fitting software, are given in this report for both hot and cold
characteristics. The resulting values for VF agree with the true device characteristic over a current range,
which is limited to that plotted.
125°C Coefficients
0.1805148
A
B
C
D
0.2223172
0.924871×10-3
-0.01399568
Data Sheet. Types M0280S/R#200 to M0280S/R#250 Issue 2
Page 5 of 9
November 2014
Soft Recovery Diode Types M0280S/R#200 to M0280S/R#250
Curves
Figure 1 – Forward characteristics of Limit device
Figure 2 – Maximum recovered charge, Qrr
M0280S/R#200-250
Issue 2
M0280S/R#200-250
Issue 2
Figure 3 – Maximum recovered charge, Qra (50%
chord)
Figure 4 – Maximum reverse recovery current, Irm
M0280S/R#200-250
Issue 2
M0280S/R#200-250
Issue 2
Data Sheet. Types M0280S/R#200 to M0280S/R#250 Issue 2
Page 6 of 9
November 2014
Soft Recovery Diode Types M0280S/R#200 to M0280S/R#250
Figure 5 - Reverse recovery energy per pulse
M0280S/R#200-250
Issue 2
Figure 6 – Forward recovery voltage
M0280S/R#200-250
Issue 2
Data Sheet. Types M0280S/R#200 to M0280S/R#250 Issue 2
Page 7 of 9
November 2014
Soft Recovery Diode Types M0280S/R#200 to M0280S/R#250
Figure 7 – Maximum surge and I2t ratings
M0280S/R#200-250
Issue 2
Figure 8 – Transient thermal impedance
M0280S/R#200-250
Issue 2
Data Sheet. Types M0280S/R#200 to M0280S/R#250 Issue 2
Page 8 of 9
November 2014
Soft Recovery Diode Types M0280S/R#200 to M0280S/R#250
Outline Drawing & Ordering Information
W22 – 100A297 (S/RJ)
W24 – 100A280 (S/RC)
ORDERING INFORMATION
(Please quote 10 digit code as below)
M0280
S/R
#
0
Fixed outline code
Polarity
S – Cathode stud
R – Anode stud
Voltage code
VRRM/100
20-25
Fixed
Type Code
J – ½” ceramic stud with lug
C – ¾” ceramic stud with lead
Fixed code
Order code: M0280RJ200 – 2000V VRRM, ½” stud base with lug, stud anode.
IXYS Semiconductor GmbH
Edisonstraße 15
D-68623 Lampertheim
Tel: +49 6206 503-0
IXYS UK Westcode Ltd
Langley Park Way, Langley Park,
Chippenham, Wiltshire, SN15 1GE.
Tel: +44 (0)1249 444524
Fax: +49 6206 503-627
E-mail: marcom@ixys.de
Fax: +44 (0)1249 659448
E-mail: sales@ixysuk.com
IXYS Corporation
1590 Buckeye Drive
Milpitas CA 95035-7418
Tel: +1 (408) 547 9000
Fax: +1 (408) 496 0670
IXYS Long Beach, Inc
IXYS Long Beach, Inc
2500 Mira Mar Ave, Long Beach
CA 90815
www.ixysuk.com
Tel: +1 (562) 296 6584
Fax: +1 (562) 296 6585
www.ixys.com
E-mail: sales@ixys.net
E-mail: service@ixyslongbeach.com
The information contained herein is confidential and is protected by Copyright. The information may not be used or disclosed
except with the written permission of and in the manner permitted by the proprietors IXYS UK Westcode Ltd.
© IXYS UK Westcode Ltd.
In the interest of product improvement, IXYS UK Westcode Ltd reserves the right to change specifications at any time without
prior notice.
Devices with a suffix code (2-letter, 3-letter or letter/digit/letter combination) added to their generic code are not necessarily
subject to the conditions and limits contained in this report.
Data Sheet. Types M0280S/R#200 to M0280S/R#250 Issue 2
Page 9 of 9
November 2014
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