MAC8SMG [LITTELFUSE]
4 Quadrant Logic Level TRIAC, 600V V(DRM), 8A I(T)RMS, TO-220AB, CASE 221A-09, 3 PIN;
| 型号： | MAC8SMG |
| 厂家： | 
LITTELFUSE |
| 描述： | 4 Quadrant Logic Level TRIAC, 600V V(DRM), 8A I(T)RMS, TO-220AB, CASE 221A-09, 3 PIN 局域网 三端双向交流开关 |
| 文件： | 总8页 (文件大小：565K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Thyristors
Surface Mount – 50V > MAC8SDG, MAC8SMG, MAC8SNG
Pb
MAC8SDG, MAC8SMG, MAC8SNG
Description
Designed primarily for full-wave ac control applications,
such as motor controls, heating controls and power
supplies; or wherever half−wave silicon gate−controlled,
solid−state devices are needed.
Features
• Sensitive Gate AllowsTriggering by Microcontrollers and
other Logic Circuits
• Uniform GateTrigger Currents inThree Quadrants; Q1,
Q2, and Q3
• High Immunity to dv/dt − 25 V/µs Minimum at 110°C
• High Commutating di/dt − 8.0 A/ms Minimum at 110°C
• Maximum Values of IGT, VGT and IH Specified for Ease
of Design
Pin Out
• On−State Current Rating of 8 Amperes RMS at 70°C
• High Surge Current Capability − 70 Amperes
• Blocking Voltage to 800 Volts
• Rugged, EconomicalTO−220 Package
• These Devices are Pb−Free and are RoHS Compliant
CASE 221A
STYLE 4
Functional Diagram
1
2
MT2
MT1
G
Additional Information
Samples
Datasheet
Resources
© 2017 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 08/30/17
Thyristors
Surface Mount – 50V > MAC8SDG, MAC8SMG, MAC8SNG
Maximum Ratings (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
V
Peak Repetitive Off-State Voltage (Note 1)
(Gate Open, Sine Wave 50 to 60 Hz, TJ = 25° to 100°C)
VDRM
,
MAC8SDG
MAC8SMG
MAC8SNG
400
600
800
VRRM
On-State RMS Current (Full Cycle Sine Wave, 60 Hz, TC = 100°C)
IT
8.0
70
A
A
(RMS)
Peak Non-Repetitive Surge Current
(One Full Cycle Sine Wave, 60 Hz, TJ = 125°C)
ITSM
Circuit Fusing Consideration (t = 8.3 ms)
I2t
20
16
A²sec
W
Peak Gate Power
(Pulse Width ≤ 1.0 µs, TC = 80°C)
PGM
Average Gate Power (t = 8.3 ms, TC = 80°C)
Operating JunctionTemperature Range
StorageTemperature Range
PG (AV)
0.35
W
°C
°C
TJ
-40 to +110
-40 to +150
Tstg
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied.
Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative
potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.
Thermal Characteristics
Rating
Symbol
Value
Unit
R8JC
Thermal Resistance,
Junction−to−Case (AC)
2.2
°C/W
Junction−to−Ambient
62.5
R8JA
TL
Maximum LeadTemperature for Soldering Purposes, 1/8” from case for
10 seconds
260
°C
© 2017 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 08/30/17
Thyristors
Surface Mount – 50V > MAC8SDG, MAC8SMG, MAC8SNG
Electrical Characteristics - OFF (TJ = 25°C unless otherwise noted ; Electricals apply in both directions)
Characteristic
Symbol
Min
Typ
Max
Unit
Peak Repetitive Blocking Current
(VD = VDRM = VRRM; Gate Open)
-
-
0.01
TJ = 25°C
TJ = 110°C
IDRM
,
mA
IRRM
-
-
2.0
Electrical Characteristics - ON (TJ = 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic
11 A)
Symbol
Min
Typ
Max
Unit
Peak On−State Voltage (Note 4) (ITM
=
VTM
−
−
1.85
5.0
5.0
5.0
10
V
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
−
−
2.0
3.0
GateTrigger Current
(Continuous dc)
IGT
mA
mA
mA
(VD = 12 V, RL = 100 Ω)
−
3.0
IH
–
3.0
Holding Current (VD = 12 V, Gate Open, Initiating Current = 150 mA))
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
_
5.0
15
Latching Current
IL
_
10
20
(VD = 24 V, IG = 5 mA)
_
5.0
15
0.45
0.45
0.45
0.62
0.60
0.65
1.5
1.5
1.5
GateTrigger Voltage
VGT
V
(VD = 12 V, RL = 100 Ω)
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may
not be indicated by the Electrical Characteristics if operated under different conditions.
2. Indicates PulseTest: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%.
Dynamic Characteristics
Characteristic
Symbol
Min
Typ
Max
Unit
Rate of Change of Commutating Current See Figure 10.
(VD = 400 V, ITM = 4.4 A, Commutating dv/dt = 18 V/µs,Gate Open, TJ = 125°C,
f = 250 Hz, No Snubber) CL = 10 µF LL = 40 mH
dV/dt
8.0
10
−
A/ms
Critical Rate of Rise of Off-State Voltage
(VD = Rated VDRM, Exponential Waveform, RGK = 510 Ω, TJ = 110°C)
dV/dt
25
75
−
V/µs
© 2017 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 08/30/17
Thyristors
Surface Mount – 50V > MAC8SDG, MAC8SMG, MAC8SNG
Voltage Current Characteristic of SCR
Symbol
VDRM
IDRM
Parameter
+C urrent
Quadrant 1
MainTerminal 2 +
Peak Repetitive Forward Off State Voltage
Peak Forward Blocking Current
Peak Repetitive Reverse Off State Voltage
Peak Reverse Blocking Current
Maximum On State Voltage
Holding Current
V
TM
on state
I
H
I
at V
RRM
RRM
VRRM
IRRM
+V oltage
DRM
off state
I
I
at V
H
DRM
Quadrant 3
V
TM
VTM
IH
Quadrant Definitions for aTriac
Quadrant II
Quadrant I
I
Quadrant III
Quadrant IV
All polarities are referenced to MT1.
With in−phase signals (using standard AC lines) quadrants I and III are used.
© 2017 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 08/30/17
Thyristors
Surface Mount – 50V > MAC8SDG, MAC8SMG, MAC8SNG
Figure 1. RMS Current Derating
Figure 2. Maximum On-State Power Dissipation
Figure 3. On−State Characteristics
Figure 4.TransientThermal Response
1
Z
= R
r(t)
JC(t)
JC(t)
0.1
0.01
0.1
1
10
100
1000
1 104
t, TIME (ms)
Figure 6.Typical Latching CurrentVs. JunctionTemperature
Figure 5.Typical Holding CurrentVs. JunctionTemperature
© 2017 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 08/30/17
Thyristors
Surface Mount – 50V > MAC8SDG, MAC8SMG, MAC8SNG
Figure 7.Typical GateTrigger CurrentVs. JunctionTemperature
Figure 8.Typical GateTriggerVoltageVs. JunctionTemperature
Figure 10.Typical Exponential Static dv/dtVersus Peak
Voltage, MT2(+)
Figure 9.Typical Exponential Static dv/dtVs. Gate−MT1
Resistance, MT2(+)
200
T = 110°C
J
180
160
140
120
100
80
V
= 400 V
PK
600 V
800 V
60
100 20
30
40
50
60
70
80
90
100
RGK, GATE-MT1 RESISTANCE (OHMS)
Figure 11.Typical Exponential Static dv/dtVs. Junction
Temperature, MT2(+)
Figure 12.Typical Exponential Static dv/dtVs. PeakVoltage,
MT2(−)
130
120
V
PK
= 400 V
110
100
90
600 V
800 V
R
= 510
G - MT1
80
70
100
105
T , Junction Temperature (°C )
110
J
© 2017 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 08/30/17
Thyristors
Surface Mount – 50V > MAC8SDG, MAC8SMG, MAC8SNG
Figure 13.Typical Exponential Static dv/dtVersus Junction
Temperature, MT2(−)
Figure 14.Typical Exponential Static dv/dtVersus Gate−MT1
Resistance, MT2(−)
350
300
250
200
150
V
PK
= 400 V
600 V
800 V
R
= 510
G - MT1
100
50
100
105
T , Junction Temperature°C()
110
J
Figure 15. Critical Rate of Rise of CommutatingVoltage
100
V
PK
= 400 V
90°C
10
100°C
1
2 t
w
f =
t
w
6f I
TM
1000
(di/dt) =
c
110°C
15
V
DRM
1
15
10
20
25
30
(di/dt), CRITICAL RATE OF CHANGE OF COMMUTATING CURRENT (A/ms)
c
Figure 16. SimplifiedTest Circuit to Measure the Critical Rate of Rise of Commutating Current (di/dt)
L
1N4007
L
200 V
RMS
ADJUST FOR
, 60 Hz V
MEASURE
I
I
TM
AC
CHARGE
CONTROL
-
TRIGGER
200 V
CHARGE
+
MT2
1N914
51
MT1
G
C
L
© 2017 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 08/30/17
Thyristors
Surface Mount – 50V > MAC8SDG, MAC8SMG, MAC8SNG
Dimensions
Part Marking System
4
SEATING
PLANE
B
F
C
T
S
MAC8xG
AYWW
4
3
Q
A
K
12
U
1
CASE 221A
STYLE 4
2
H
3
Z
x=
A=
Y=
D, M, or N
Assembly Location (Optional)*
Year
R
L
WW = Work Week
V
G
J
D
* The Assembly Location code (A) is optional. In
cases where the Assembly Location is stamped
on the package the assembly code may be blank.
N
Pin Assignment
Inches
Millimeters
Min Max
Dim
1
MainTerminal 1
MainTerminal 2
Gate
Min
Max
2
3
4
A
B
C
D
F
0.570
0.380
0.160
0.025
0.142
0.095
0.110
0.014
0.500
0.045
0.190
0.100
0.080
0.045
0.235
0.000
0.045
−−−
0.620
0.405
0.190
0.035
0.147
0.105
0.155
0.022
0.562
0.060
0.210
0.120
0.110
0.055
0.255
0.050
−−−
14.48
9.66
4.07
0.64
3.61
2.42
2.80
0.36
12.70
1.15
15.75
10.28
4.82
0.88
3.73
2.66
3.93
0.55
14.27
1.52
MainTerminal 2
G
H
J
Ordering Information
Device
Package
Shipping
K
L
MAC8SDG
N
Q
R
S
T
4.83
2.54
2.04
1.15
5.33
3.04
2.79
1.39
TO-220AB
(Pb-Free)
MAC8SMG
MAC8SNG
50 Units / Rail
5.97
0.00
1.15
6.47
1.27
U
V
Z
−−−
2.04
0.080
−−−
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M,
1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND
LEAD IRREGULARITIES ARE ALLOWED.
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and
test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete
Disclaimer Notice at: www.littelfuse.com/disclaimer-electronics
© 2017 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 08/30/17
相关型号：
MAC8SNG
4 Quadrant Logic Level TRIAC, 800V V(DRM), 8A I(T)RMS, TO-220AB, CASE 221A-09, 3 PIN
LITTELFUSE
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