MCA431-22IO1 [LITTELFUSE]
Trigger Device,;
| 型号： | MCA431-22IO1 |
| 厂家： | 
LITTELFUSE |
| 描述： | Trigger Device, |
| 文件： | 总10页 (文件大小：392K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Date: 20 Mar 2008
Data Sheet Issue: 1
IXYS
Thyristor/Diode Modules M## 431
Absolute Maximum Ratings
VRRM
VDRM
[V]
MCC
MCA
MCK
MCD
MDC
2000
2200
2400
431-20io1
431-22io1
431-24io1
431-20io1
431-22io1
431-24io1
431-20io1
431-22io1
431-24io1
431-20io1
431-22io1
431-24io1
431-20io1
431-22io1
431-24io1
MAXIMUM
VOLTAGE RATINGS
UNITS
LIMITS
VDRM
Repetitive peak off-state voltage 1)
Non-repetitive peak off-state voltage 1)
Repetitive peak reverse voltage 1)
Non-repetitive peak reverse voltage 1)
2000-2400
2100-2500
2000-2400
2100-2500
V
V
V
V
VDSM
VRRM
VRSM
MAXIMUM
LIMITS
OTHER RATINGS
UNITS
IT(AV)M
IT(AV)M
Maximum average on-state current, TC = 85°C 2)
Maximum average on-state current. TC = 100°C 2)
429
A
A
296
IT(RMS)M Nominal RMS on-state current, TC = 55°C 2)
1020
809
A
IT(d.c.)
ITSM
ITSM2
I2t
D.C. on-state current, TC = 55°C
A
3)
Peak non-repetitive surge tp = 10 ms, VRM = 60%VRRM
10.9
kA
kA
A2s
A2s
A/µs
A/µs
V
Peak non-repetitive surge tp = 10 ms, VRM ≤ 10V 3)
12.0
I2t capacity for fusing tp = 10 ms, VRM = 60%VRRM
594×103
720×103
200
3)
I2t
I2t capacity for fusing tp = 10 ms, VRM ≤ 10 V 3)
Critical rate of rise of on-state current (repetitive) 4)
Critical rate of rise of on-state current (non-repetitive) 4)
Peak reverse gate voltage
(di/dt)cr
400
VRGM
PG(AV)
PGM
5
Mean forward gate power
4
W
Peak forward gate power
Isolation Voltage 5)
30
W
VISOL
Tvj op
Tstg
3000
-40 to +125
-40 to +50
V
Operating temperature range
°C
°C
Storage temperature range
Notes:
1) De-rating factor of 0.13% per °C is applicable for Tvj below 25°C.
2) Single phase; 50 Hz, 180° half-sinewave.
3) Half-sinewave, 125°C Tvj initial.
4) VD = 67% VDRM, IFG = 2 A, tr ≤ 0.5µs, TC = 125°C.
5) AC RMS voltage, 50 Hz, 1min test
Rating Report. Types M##431-20io1 and M##431-24io1 Issue 1
Page 1 of 10
March, 2008
IXYS
Thyristor/Diode Module Types M##431-20io1 to M##431-24io1
Characteristics
PARAMETER
MIN. TYP. MAX. TEST CONDITIONS 1)
UNITS
VTM
VT0
rT
Maximum peak on-state voltage
Threshold voltage
-
-
-
1.30
1.50 ITM = 1256 A
V
V
-
1.00
0.41
Slope resistance
-
mΩ
V/µs
mA
mA
V
(dv/dt)cr Critical rate of rise of off-state voltage 1000
-
-
VD = 80% VDRM, linear ramp, Gate o/c
IDRM
IRRM
VGT
IGT
VGD
IL
Peak off-state current
Peak reverse current
Gate trigger voltage
-
-
100 Rated VDRM
100 Rated VRRM
2.5
-
-
-
-
Tvj = 25°C, VD = 12 V, IT = 3 A
Gate trigger current
-
-
250
-
mA
V
Gate non-trigger voltage
Latching current
0.25
-
67% VDRM
-
-
-
-
-
-
-
-
-
-
1000 VD = 12 V, Tvj = 25°C
300 VD = 12 V, Tvj = 25°C
mA
mA
IH
Holding current
tgd
Gate controlled turn-on delay time
Turn-on time
-
2.5
IFG = 2 A, tr =1 µs, VD = 40%VDRM
,
µs
I
TM = 1500 A, di/dt = 10 A/µs, Tvj = 25°C
tgt
-
8.0
Qrr
Qra
Irm
Recovered Charge
1600
1350
120
23
1800
µC
µC
A
Recovered Charge, 50% chord
Reverse recovery current
Reverse recovery time, 50% chord
-
-
-
I
TM = 800 A, tp =1ms, di/dt =10A/µs,
VR =100 V
trr
µs
ITM = 1500 A, tp = 1 ms, di/dt = 10 A/µs,
tq
Turn-off time
-
-
250
µs
VR = 100 V, VDR = 67%VDRM, dvDR/dt = 50 V/µs
-
-
0.062 Single Thyristor
0.031 Whole Module
0.02 Single Thyristor
0.01 Whole Module
6.9
K/W
K/W
K/W
K/W
Nm
Nm
kg
RthJC
Thermal resistance, junction to case
-
-
-
-
-
RthCH
Thermal resistance, case to heatsink
-
-
F1
F2
Wt
Mounting force (to heatsink)
Mounting force (to terminals)
Weight
5.1
10.8
-
2)
-
13.2
1.5
-
Notes:
1) Unless otherwise indicated Tvj=125°C.
2) Screws must be lubricated.
Rating Report. Types M##431-20io1 and M##431-24io1 Issue 1
Page 2 of 10
March, 2008
IXYS
Thyristor/Diode Module Types M##431-20io1 to M##431-24io1
Notes on Ratings and Characteristics
1.0 Voltage Grade Table
V
DRM VRRM
V
DSM VRSM
VD VR
DC V
1500
1650
1800
Voltage Grade
V
V
20
22
24
2000
2200
2400
2100
2300
2500
2.0 Extension of Voltage Grades
This report is applicable to other voltage grades when supply has been agreed by Sales/Production.
3.0 De-rating Factor
A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for Tvj below 25°C.
4.0 Repetitive dv/dt
Standard dv/dt is 1000V/µs.
5.0 Snubber Components
When selecting snubber components, care must be taken not to use excessively large values of snubber
capacitor or excessively small values of snubber resistor. Such excessive component values may lead to
device damage due to the large resultant values of snubber discharge current. If required, please consult
the factory for assistance.
6.0 Rate of rise of on-state current
The maximum un-primed rate of rise of on-state current must not exceed 400A/µs at any time during turn-
on on a non-repetitive basis. For repetitive performance, the on-state rate of rise of current must not
exceed 200A/µs at any time during turn-on. Note that these values of rate of rise of current apply to the
total device current including that from any local snubber network.
7.0 Gate Drive
The nominal requirement for a typical gate drive is illustrated below. An open circuit voltage of at least 30V
is assumed. This gate drive must be applied when using the full di/dt capability of the device.
IGM
4A/µs
IG
tp1
The magnitude of IGM should be between five and ten times IGT, which is shown on page 2. Its duration
(tp1) should be 20µs or sufficient to allow the anode current to reach ten times IL, whichever is greater.
Otherwise, an increase in pulse current could be needed to supply the necessary charge to trigger. The
‘back-porch’ current IG should remain flowing for the same duration as the anode current and have a
magnitude in the order of 1.5 times IGT.
Rating Report. Types M##431-20io1 and M##431-24io1 Issue 1
Page 3 of 10
March, 2008
IXYS
Thyristor/Diode Module Types M##431-20io1 to M##431-24io1
8.0 Computer Modelling Parameters
8.1 Thyristor Dissipation Calculations
∆T
Rth
2
−VT 0 + VT 0 + 4⋅ ff 2 ⋅r ⋅WAV
WAV =
T
IAV =
and:
2⋅ ff 2 ⋅r
T
∆T = Tj max −TK
Where VT0 = 1.0 V, rT = 0.41 mΩ.
Rth = Supplementary thermal impedance, see table below and
ff = Form factor, see table below.
Supplementary Thermal Impedance
Conduction Angle
Square wave
Sine wave
30°
0.0702
0.0677
60°
0.0685
0.0673
90°
0.0679
0.0664
120°
0.0668
0.0655
180°
0.0658
0.0650
270°
0.0637
d.c.
0.0620
Form Factors
90°
Conduction Angle
Square wave
Sine wave
30°
3.464
3.98
60°
120°
1.732
1.879
180°
1.414
1.57
270°
1.149
d.c.
1
2.449
2.778
2
2.22
8.2 Calculating thyristor VT using ABCD Coefficients
The on-state characteristic IT vs. VT, on page 6 is represented by a set of constants A, B, C, D, forming
the coefficients of the representative equation for VT in terms of IT given below:
VT = A + B ⋅ln
(
IT + C ⋅ IT + D ⋅ IT
)
The constants, derived by curve fitting software, are given below for both hot and cold characteristics. The
resulting values for VT agree with the true device characteristic over a current range, which is limited to
that plotted.
25°C Coefficients
125°C Coefficients
A
B
C
D
1.001105
0.1016930
A
B
C
D
0.6018822
0.06092552
2.507715E-04
4.119984E-03
4.732084E-04
-0.02366814
Rating Report. Types M##431-20io1 and M##431-24io1 Issue 1
Page 4 of 10
March, 2008
IXYS
Thyristor/Diode Module Types M##431-20io1 to M##431-24io1
8.3 D.C. Thermal Impedance Calculation
−t
τ p
p=n
r = r ⋅ 1− e
∑
t
p
p=1
Where p = 1 to n and:
n = number of terms in the series
t = Duration of heating pulse in seconds
rt = Thermal resistance at time t
rp = Amplitude of pth term
= Time Constant of rth term
τp
The coefficients for this device are shown in the table below:
D.C.
Term
1
2
3
4
5
1.37×10-3
7.6×10-4
4.86×10-3
8.6×10-3
0.0114
0.101
0.0223
0.56
0.0221
3.12
rp
τp
9.0 Reverse recovery ratings
(i) Qra is based on 50% IRM chord as shown in Fig. 1
Fig. 1
(ii) Qrr is based on a 150 µs integration time i.e.
150µs
Qrr = irr .dt
∫
0
(iii)
t1
t2
K Factor =
Rating Report. Types M##431-20io1 and M##431-24io1 Issue 1
Page 5 of 10
March, 2008
IXYS
Thyristor/Diode Module Types M##431-20io1 to M##431-24io1
Curves
Figure 1 – On-state characteristics of Limit device
10000
M##431-20io1-24io1
Issue 1
Tj = 25°C
Tj = 125°C
1000
100
0
0.5
1
1.5
2
2.5
3
3.5
Instantaneous On-state voltage - VTM (V)
Figure 2 – Gate characteristics – Trigger limits
Figure 3 – Gate characteristics – Power curves
25
7
M##431-20io1-24io1
M##431-20io1-24io1
Issue 1
Issue 1
Tj=25°C
Tj=25°C
6
20
Max VG dc
Max VG dc
5
15
4
IGT, VGT
3
10
PG Max 30W dc
2
5
PG 4W dc
1
IGD, VGD
Min VG dc
Min VG dc
0.8
0
0
0
2
4
6
8
10
0
0.2
0.4
0.6
1
Gate Trigger Current - IGT (A)
Gate Trigger Current - IGT (A)
Rating Report. Types M##431-20io1 and M##431-24io1 Issue 1
Page 6 of 10
March, 2008
IXYS
Thyristor/Diode Module Types M##431-20io1 to M##431-24io1
Figure 4 - Total recovered charge, Qrr
Figure 5 - Recovered charge, Qra (50% chord)
10000
10000
M##431-20io1-24io1
M##431-20io1-24io1
Issue 1
Issue 1
Tj=125°C
Tj=125°C
1600A
1200A
1600A
1200A
800A
400A
800A
400A
1000
1000
100
1
10
100
1000
1
10
100
1000
di/dt (A/µs)
di/dt (A/µs)
Figure 6 - Peak reverse recovery current, Irm
Figure 7 - Maximum recovery time, trr (50% chord)
10000
100.0
M##431-20io1-24io1
M##431-20io1-24io1
Issue 1
Issue 1
Tj=125°C
Tj=125°C
1600A
1000
100
10
1200A
800A
400A
1600A
1200A
10.0
800A
400A
1.0
1
10
100
1000
1
10
100
1000
di/dt (A/µs)
di/dt (A/µs)
Rating Report. Types M##431-20io1 and M##431-24io1 Issue 1
Page 7 of 10
March, 2008
IXYS
Thyristor/Diode Module Types M##431-20io1 to M##431-24io1
Figure 8 – On-state current vs. Power dissipation
– Sine wave
Figure 9 – On-state current vs. Heatsink
temperature – Sine wave
1800
140
M##431-20io1-24io1
M##431-20io1-24io1
Issue 1
Issue 1
180°
1600
1400
1200
1000
800
600
400
200
0
120°
90°
60°
120
30°
100
80
60
40
30°
60°
90° 120° 180°
20
0
0
200
400
600
800
1000
0
200
400
600
800
1000
Mean forward current (A) (Whole cycle averaged)
Mean forward current (A) (Whole cycle averaged)
Figure 10 – On-state current vs. Power dissipation
– Square wave
Figure 11 – On-state current vs. Heatsink
temperature – Square wave
1800
140
M##431-20io1-24io1
M##431-20io1-24io1
Issue 1
Issue 1
1600
120
100
80
60
40
20
0
1400
1200
d.c.
1000
270°
180°
120°
90°
60°
30°
800
600
400
200
0
30°
60° 90° 120° 180° 270° d.c.
0
200
400
600
800
1000
1200
0
200
400
600
800
1000
1200
Mean Forward Current (Amps) (Whole Cycle Averaged)
Mean Forward Current (Amps) (Whole Cycle Averaged)
Rating Report. Types M##431-20io1 and M##431-24io1 Issue 1
Page 8 of 10
March, 2008
IXYS
Thyristor/Diode Module Types M##431-20io1 to M##431-24io1
Figure 12 – Maximum surge and I2t Ratings
Gate may temporarily lose control of conduction angle
100000
10000
1000
1.00E+07
M##431-20io1-24io1
Issue 1
I2t: VRRM ≤10V
Tj (initial) = 125°C
I2t: 60% VRRM
1.00E+06
ITSM: VRRM ≤10V
ITSM: 60% VRRM
1.00E+05
1
3
5
10
1
5
10
50 100
Duration of surge (ms)
Duration of surge (cycles @ 50Hz)
Figure 13 – Transient thermal impedance
0.1
Single Thyristor
M##431-20io1-24io1
Issue 1
0.01
0.001
0.0001
0.00001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Time (s)
Rating Report. Types M##431-20io1 and M##431-24io1 Issue 1
Page 9 of 10
March, 2008
IXYS
Thyristor/Diode Module Types M##431-20io1 to M##431-24io1
Outline Drawing & Ordering Information
3
6 7
1
5 4 2
5 4 2
2
MCC
MCA
3 7 6
1
3
3
3
6 7 1 4 5
MCK
MCD
MDC
1
5 4 2
6 7
1
2
150A118
ORDERING INFORMATION
(Please quote 11 digit code as below)
ꢀꢀ
M
##
431
io
1
Configuration code
CC, CA, CK, CD or
DC
Voltage code
VRRM/100
20-24
Fixed
Fixed
i = Critical dv/dt 1000 V/µs
o = Typical turn-off time
Fixed
Type Code
Type Code
Version Code
Typical order code: MCD431-22io1– MCD configuration, 2200V VRRM
IXYS Semiconductor GmbH
Edisonstraße 15
Westcode Semiconductors Ltd
Langley Park Way, Langley Park,
Chippenham, Wiltshire, SN15 1GE.
Tel: +44 (0)1249 444524
D-68623 Lampertheim
Tel: +49 6206 503-0
IXYS
Fax: +49 6206 503-627
E-mail: marcom@ixys.de
Fax: +44 (0)1249 659448
E-mail: WSL.sales@westcode.com
www.ixys.com
IXYS Corporation
IXYS Long Beach
3270 Cherry Avenue
1590 Buckeye Drive
Milpitas, CA 95035-7418 USA
Tel: +1 (408) 457 9000
Fax: +1 (408) 496-0670
E-mail: sales@ixys.net
Long Beach CA 90807 USA
Tel: +1 (562) 595 6971
Fax: +1 (562) 595 8182
WESTCODE
E-mail: WSI.sales@westcode.com
An IXYS Company
www.westcode.com
© IXYS Semiconductor GmbH.
The information contained herein is confidential and is protected by Copyright. The information may not be used or disclosed
except with the written permission of and in the manner permitted by the proprietors IXYS Semiconductors GmbH.
In the interest of product improvement, IXYS reserves the right to change specifications at any time without prior notice.
Rating Report. Types M##431-20io1 and M##431-24io1 Issue 1
Page 10 of 10
March, 2008
相关型号：
MCA431-22IO2
Silicon Controlled Rectifier, 2200V V(DRM), 2200V V(RRM), 2 Element, MODULE-7
LITTELFUSE
MCA431-24IO2
Silicon Controlled Rectifier, 2400V V(DRM), 2400V V(RRM), 2 Element, MODULE-7
LITTELFUSE
MCA500-12IO1
Silicon Controlled Rectifier, 1294A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 2 Element, MODULE-7
IXYS
MCA500-12IO1
Silicon Controlled Rectifier, 1294A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 2 Element, MODULE-7
LITTELFUSE
MCA500-14IO1
Silicon Controlled Rectifier, 1294A I(T)RMS, 1400V V(DRM), 1400V V(RRM), 2 Element, MODULE-7
IXYS
©2020 ICPDF网 联系我们和版权申明