MCC255-18IO1 [LITTELFUSE]
Silicon Controlled Rectifier, 450A I(T)RMS, 250000mA I(T), 1800V V(DRM), 1800V V(RRM), 2 Element,;
| 型号： | MCC255-18IO1 |
| 厂家： | 
LITTELFUSE |
| 描述： | Silicon Controlled Rectifier, 450A I(T)RMS, 250000mA I(T), 1800V V(DRM), 1800V V(RRM), 2 Element, 局域网 栅 栅极 |
| 文件： | 总6页 (文件大小：218K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MCC255-18io1
=
VRRM
ITAV
VT
2x1800V
250A
Thyristor Module
=
=
1.08V
Phase leg
Part number
MCC255-18io1
Backside: isolated
3
1
2
6
7
5
4
Y1
Features / Advantages:
Applications:
Package:
● International standard package
● Direct copper bonded Al2O3-ceramic
with copper base plate
● Planar passivated chip
● Keyed gate/cathode twin pins
● Motor control, softstarter
● Power converter
● Heat and temperature control for
industrial furnaces and chemical
processes
● Isolation Voltage:
● Industry standard outline
● RoHS compliant
● Soldering pins for PCB mounting
● Base plate: Copper
internally DCB isolated
V~
3600
● Lighting control
● Solid state switches
● Advanced power cycling
Disclaimer Notice
Information furnished is believed to be accurate and reliable. However, users should independently
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
www.littelfuse.com/disclaimer-electronics.
and may not be used in, all applications. Read complete Disclaimer Notice at
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20191210f
© 2019 IXYS all rights reserved
MCC255-18io1
Ratings
Thyristor
Symbol
VRSM/DSM
Definition
Conditions
min. typ. max. Unit
TVJ = 25°C
TVJ = 25°C
TVJ = 25°C
TVJ = 140°C
TVJ = 25°C
1900
1800
1
V
V
max. non-repetitive reverse/forward blocking voltage
max. repetitive reverse/forward blocking voltage
VRRM/DRM
IR/D
VR/D =1800 V
VR/D =1800 V
IT = 300 A
IT = 600 A
IT = 300 A
IT = 600 A
TC = 85°C
180° sine
mA
reverse current, drain current
40 mA
forward voltage drop
1.14
V
V
V
V
A
A
V
VT
1.36
1.08
1.33
250
TVJ
=
°C
125
average forward current
RMS forward current
TVJ = 140°C
TVJ = 140°C
ITAV
IT(RMS)
VT0
450
0.80
threshold voltage
for power loss calculation only
slope resistance
0.68 mΩ
0.14 K/W
K/W
rT
RthJC
RthCH
Ptot
thermal resistance junction to case
thermal resistance case to heatsink
0.04
TC = 25°C
TVJ = 45°C
VR = 0 V
820
9.20
9.94
7.82
8.45
W
kA
kA
kA
kA
total power dissipation
max. forward surge current
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
VR = 400V f = 1 MHz
tP = 30 µs
ITSM
TVJ = 140°C
VR = 0 V
value for fusing
TVJ = 45°C
VR = 0 V
I²t
423.2 kA²s
410.6 kA²s
305.8 kA²s
296.7 kA²s
pF
TVJ = 140°C
VR = 0 V
junction capacitance
TVJ = 25°C
TC = 140°C
438
CJ
120
60
W
W
W
PGM
max. gate power dissipation
tP = 500 µs
20
PGAV
average gate power dissipation
critical rate of rise of current
TVJ = 140°C; f = 50 Hz
repetitive, IT = 860 A
100 A/µs
(di/dt)cr
1
tP = 200 µs;diG /dt =
IG = 1A; V = ⅔ VDRM
V = ⅔ VDRM
A/µs;
non-repet., IT = 250 A
TVJ = 140°C
500 A/µs
critical rate of rise of voltage
gate trigger voltage
1000 V/µs
(dv/dt)cr
VGT
RGK = ∞; method 1 (linear voltage rise)
VD = 6 V
TVJ = 25°C
TVJ = -40°C
TVJ = 25°C
TVJ = -40°C
TVJ = 140°C
2
3
V
V
gate trigger current
VD = 6 V
150 mA
220 mA
IGT
gate non-trigger voltage
gate non-trigger current
latching current
VD = ⅔ VDRM
0.25
V
VGD
IGD
IL
10 mA
tp = 30 µs
TVJ = 25°C
200 mA
IG = 0.45A; diG/dt = 0.45 A/µs
VD = 6 V RGK = ∞
holding current
TVJ = 25°C
TVJ = 25°C
150 mA
IH
gate controlled delay time
VD = ½ V
2
µs
tgd
DRM
IG
VR = 100 V; IT = 300A; V = ⅔ VDRM TVJ =125 °C
di/dt = 10 A/µs dv/dt = 50 V/µs µs
=
1A; diG/dt =
1 A/µs
turn-off time
200
µs
tq
tp = 200
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20191210f
© 2019 IXYS all rights reserved
MCC255-18io1
Ratings
Package Y1
Symbol
IRMS
Definition
Conditions
min. typ. max. Unit
per terminal
600
140
125
125
A
°C
°C
°C
g
RMS current
-40
-40
-40
TVJ
virtual junction temperature
operation temperature
storage temperature
Top
Tstg
680
Weight
4.5
11
7
Nm
MD
mounting torque
terminal torque
M
13 Nm
T
terminal to terminal
terminal to backside
16.0
16.0
3600
3000
mm
mm
V
dSpp/App
dSpb/Apb
creepage distance on surface | striking distance through air
t = 1 second
V
isolation voltage
ISOL
50/60 Hz, RMS; IISOL ≤ 1 mA
t = 1 minute
V
Production
Index (PI)
Date Code
(DC)
Circuit
yywwAA
Part Number
Lot.No: xxxxxx
Data Matrix: part no. (1-19), DC + PI (20-25), lot.no.# (26-31),
blank (32), serial no.# (33-36)
Ordering
Ordering Number
Marking on Product
MCC255-18io1
Delivery Mode
Quantity Code No.
461539
Standard
MCC255-18io1
Box
3
TVJ =140°C
Equivalent Circuits for Simulation
* on die level
Thyristor
V0
I
R0
threshold voltage
slope resistance *
0.8
0.5
V
V0 max
R0 max
mΩ
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20191210f
© 2019 IXYS all rights reserved
MCC255-18io1
Outlines Y1
3x M8
2.8 x 0.8
20
22.5
35
28.5
1
2
3
6.2
80
92
115
Optional accessories for modules
Keyed gate/cathode twin plugs with wire length = 350 mm, gate = white, cathode = red
Type ZY 180L (L = Left for pin pair 4/5)
UL 758, style 3751
Type ZY 180R (R = Right for pin pair 6/7)
3
1
2
6 7
5 4
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20191210f
© 2019 IXYS all rights reserved
MCC255-18io1
Thyristor
10000
106
400
300
200
100
0
DC
50 Hz
180° sin
120°
60°
80 % VRRM
TVJ = 45°C
TVJ = 140°C
8000
TVJ = 45°C
30°
I2dt
105
[A2s]
I
6000
TAVM
TVJ = 140°C
ITSM
4000
[A]
[A]
2000
0
0.001
104
0.01
0.1
1
1
10
0
25 50 75 100 125 150
t [s]
t [ms]
TC [°C]
Fig. 2 I2dt versus time
Fig. 3 Max. forward current
at case temperature
Fig. 1 Surge overload current
IT(F)SM: Crest value, t: duration
500
400
300
200
100
0
10
1: IGT
TVJ = 140°C
,
2: IGT, TVJ = 25°C
RthKA K/W
0.1
0.2
0.3
0.4
0.6
0.8
1.0
3: IGT, TVJ = -40°C
6
Ptot
[W]
5
4
3
2
1
VG
1
DC
[V]
180° sin
120°
60°
30°
4: PGM = 20 W
5: PGM = 60 W
6: PGM = 120 W
IGD TVJ = 140°C
,
0.1
10-3 10-2 10-1 100
101
102
0
100
200
300
0
25
50
75
100
125
150
ITAVM [A]
TA [°C]
IG [A]
Fig. 5 Surge overload current
IT(F)SM: Crest value, t: duration
Fig. 4 Power dissipation versus on-state current and
ambient temperature (per thyristor or diode)
2000
1500
1000
500
0
100
RthKA K/W
0.03
0.06
0.1
0.15
0.2
typ.
limit
TVJ = 25°C
0.3
Ptot
[W]
tgd
0.4
10
[µs]
Circuit
B6
3xMCC255 or
3xMCD255
1
0.01
0.1
1
10
0
200
400
600
0
25
50
75
100
125
150
IDAVM [A]
TA [°C]
IG [A]
Fig. 6 Three phase rectifier bridge: Power dissipation
vs. direct output current and ambient temperature
Fig. 7 Gate trigger delay time
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20191210f
© 2019 IXYS all rights reserved
MCC255-18io1
Thyristor
2000
RthKA K/W
0.03
0.06
0.1
1500
0.15
0.2
Ptot
0.3
0.4
1000
[W]
Circuit
W3
500
3xMCC255 or
3xMCD255
0
0
100 200 300 400 500
0
25
50
75
100
125
150
IRMS [A]
TA [°C]
Fig. 8 Three phase AC-controller: Power dissipation versus
RMS output current and ambient temperature
0.25
0.20
0.15
R
thJC for various conduct. angles d:
d
RthJC [K/W]
0.139
DC
180°
120°
60°
0.148
0.156
0.176
30°
0.214
ZthJC
30°
60°
120°
180°
DC
Constants for ZthJC calculation:
0.10
[K/W]
i
1
2
3
4
Rthi [K/W]
0.0066
0.0358
0.0831
0.0129
ti [s]
0.00054
0.098
0.54
0.05
12
0.00
10-3
10-2
10-1
100
101
102
t [s]
Fig. 9 Transient thermal impedance junction to case (per thyristor/diode)
0.30
0.25
0.20
RthJK for various conduct. angles d:
d
RthJK [K/W]
0.179
DC
180°
120°
60°
0.188
0.196
0.216
ZthJK
0.15
30°
0.254
Constants for ZthJK calculation:
30°
60°
[K/W]
0.10
0.05
0.00
120°
180°
DC
i
1
2
3
4
5
Rthi [K/W]
0.0066
0.0358
0.0831
0.0129
0.04
ti [s]
0.00054
0.098
0.54
12
12
10-3
10-2
10-1
100
101
102
t [s]
Fig. 10 Transient thermal impedance junction to heatsink (per thyristor/diode)
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20191210f
© 2019 IXYS all rights reserved
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