首页 |元器件品牌

P2100SB [LITTELFUSE]

Silicon Surge Protector, 240V V(BO) Max;
P2100SB
型号： P2100SB
厂家： LITTELFUSE    LITTELFUSE
描述：

Silicon Surge Protector, 240V V(BO) Max
文件： 总3页 (文件大小：151K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
 查看货源
SIDACtor® Device  
RoHS  
¨
DO-214AA SIDACtor solid state protection devices protect telecommunications equipment  
such as modems, line cards, and CPE (telephones, answering machines, and fax  
machines).  
SIDACtor devices enable equipment to comply with various regulatory requirements  
including GR 1089, ITU K.20, K.21 and K.45, IEC 60950, UL 60950, and TIA-968-A  
(formerly known as FCC Part 68).  
Electrical Parameters  
Part  
V
V
V
I
I
S
I
I
H
DRM  
S
T
DRM  
T
Number *  
Volts  
Volts  
Volts  
µAmps  
mAmps  
800  
800  
800  
800  
800  
800  
800  
800  
800  
800  
800  
800  
800  
800  
800  
Amps  
2.2  
2.2  
2.2  
2.2  
2.2  
2.2  
2.2  
2.2  
2.2  
2.2  
2.2  
2.2  
2.2  
2.2  
2.2  
mAmps  
P0080S_L  
P0220S_L  
P0300S_L  
P0640S_L  
P0720S_L  
P0900S_L  
P1100S_L  
P1300S_L  
P1500S_L  
P1800S_L  
P2100S_L  
P2300S_L  
P2600S_L  
P3100S_L  
P3500S_L  
6
25  
4
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
50  
15  
32  
4
50  
25  
40  
4
50  
58  
77  
4
150  
150  
150  
150  
150  
150  
150  
150  
150  
150  
150  
150  
65  
88  
4
75  
98  
4
90  
130  
160  
180  
220  
240  
260  
300  
350  
400  
4
120  
140  
170  
180  
190  
220  
275  
320  
4
4
4
4
4
4
4
4
* “L” in part number indicates RoHS compliance. For non-RoHS compliant device, delete “L” from part number.  
For individual “SA”, “SB”, and “SC” surge ratings, see table below.  
General Notes:  
•
•
•
•
•
•
All measurements are made at an ambient temperature of 25 °C. I applies to -40 °C through +85 °C temperature range.  
PP  
I
PP  
is a repetitive surge rating and is guaranteed for the life of the product.  
Listed SIDACtor devices are bi-directional. All electrical parameters and surge ratings apply to forward and reverse polarities.  
V
V
is measured at I  
DRM.  
is measured at 100 V/µs.  
DRM  
S
Special voltage (V and V  
) and holding current (I ) requirements are available upon request.  
DRM H  
S
Surge Ratings in Amps  
I
PP  
0.2x310 * 2x10 *  
8x20 *  
10x160 * 10x560 * 5x320 * 10x360 * 10x1000 * 5x310 *  
I
TSM  
0.5x700 ** 2x10 ** 1.2x50 ** 10x160 ** 10x560 ** 9x720 ** 10x360 ** 10x1000 ** 10x700 ** 50 / 60 Hz  
di/dt  
Amps/µs  
500  
Amps  
20  
Amps  
150  
Amps  
150  
Amps  
90  
Amps  
50  
Amps  
75  
Amps  
75  
Amps  
45  
Amps  
75  
Amps  
20  
A
B
C
25  
250  
250  
150  
200  
100  
150  
100  
200  
125  
175  
80  
100  
200  
30  
500  
50  
500  
400  
100  
30  
500  
* Current waveform in µs  
** Voltage waveform in µs  
www.littelfuse.com  
3 - 2  
© 2006 Littelfuse • Telecom Design Guide  
SIDACtor® Device  
Thermal Considerations  
Package  
Symbol  
Parameter  
Operating Junction Temperature Range  
Storage Temperature Range  
Value  
-40 to +150  
-65 to +150  
90  
Unit  
°C  
DO-214AA  
T
J
T
°C  
S
R
Thermal Resistance: Junction to Ambient  
°C/W  
θJA  
Capacitance Values  
pF  
Part Number *  
P0080S[A/B]L  
P0080SCL  
P0220SAL  
P0220SBL  
P0220SCL  
P0300S[A/B]L  
P0300SCL  
P0640S[A/B]L  
P0640SCL  
P0720SAL  
P0720SBL  
P0720SCL  
P0900SAL  
P0900SBL  
P0900SCL  
P1100SAL  
P1100SBL  
P1100SCL  
P1300SAL  
P1300SBL  
P1300SCL  
P1500SAL  
P1500SBL  
P1500SCL  
P1800SAL  
P1800SBL  
P1800SCL  
P2100S[A/B]L  
P2100SCL  
P2300SAL  
P2300SBL  
P2300SCL  
P2600SAL  
P2600SBL  
P2600SCL  
P3100SAL  
P3100SBL  
P3100SCL  
P3500SAL  
P3500SBL  
P3500SCL  
MIN  
25  
35  
25  
25  
30  
15  
25  
40  
55  
35  
35  
50  
35  
35  
45  
30  
30  
45  
25  
25  
40  
25  
25  
35  
25  
25  
35  
20  
30  
25  
25  
30  
20  
20  
30  
20  
20  
30  
20  
20  
25  
MAX  
150  
260  
150  
150  
240  
140  
250  
60  
155  
60  
75  
150  
55  
70  
140  
50  
70  
115  
45  
60  
105  
40  
55  
95  
35  
50  
90  
35  
90  
35  
50  
80  
35  
45  
80  
35  
45  
70  
35  
40  
65  
* [A/B] in part number indicates that values are for both A and B surge ratings.  
Note: Off-state capacitance (C ) is measured at 1 MHz with a 2 V bias.  
O
Telecom Design Guide • © 2006 Littelfuse  
3 - 3  
www.littelfuse.com  
SIDACtor® Device  
+I  
tr = rise time to peak value  
d = decay time to half value  
IT  
t
Peak  
Value  
100  
50  
0
IS  
IH  
Waveform = tr x td  
IDRM  
-V  
+V  
Half Value  
VDRM  
VT  
VS  
tr  
td  
0
t – Time (µs)  
-I  
V-I Characteristics  
t x t Pulse Waveform  
r d  
14  
12  
10  
8
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
6
4
25 ˚C  
25 ˚C  
2
0
-4  
-6  
-40 -20  
0
20 40 60 80 100 120 140 160  
-8  
Case Temperature (TC) – ˚C  
-40 -20  
0
20 40 60 80 100 120 140 160  
Junction Temperature (TJ) – ˚C  
Normalized V Change versus Junction Temperature  
S
Normalized DC Holding Current versus Case Temperature  
www.littelfuse.com  
3 - 4  
© 2006 Littelfuse • Telecom Design Guide  

相关型号：

P2100SBL

 Silicon Surge Protector, 240V V(BO) Max, 30A, DO-214AA, ROHS COMPLIANT PACKAGE-2
LITTELFUSE

P2100SBLRP

 The series provides a surface mount solution that enables equipment to comply
LITTELFUSE

P2100SC

 Silicon Surge Protector, 240V V(BO) Max
LITTELFUSE

P2100SCL

 Silicon Surge Protector, 240V V(BO) Max, 50A, DO-214AA, ROHS COMPLIANT PACKAGE-2
LITTELFUSE

P2100SCLRP

 The series provides a surface mount solution that enables equipment to comply
LITTELFUSE

P2100SCMC

 Silicon Surge Protector, 240V V(BO) Max
LITTELFUSE

P2100SCMCL

 MicroCapacitance (MC) SC SIDACtor㈢ Device
LITTELFUSE

P2100SCMCLRP

 MC Series DO-214 are low capacitance SIDACtor? devices designed to protect
LITTELFUSE

P2100S_L

 SIDACtor㈢ Device
LITTELFUSE

P2101

 x4 SRAM
ETC

P21010-07

 x1 Fast Page Mode DRAM
ETC

P21010-08

 x1 Fast Page Mode DRAM
ETC
©2020 ICPDF网 联系我们和版权申明