Q6012NH5TP [LITTELFUSE]
Alternistor TRIAC, 600V V(DRM), 12A I(T)RMS, TO-263AB, TO-263, D2PAK-3;
| 型号： | Q6012NH5TP |
| 厂家： | 
LITTELFUSE |
| 描述： | Alternistor TRIAC, 600V V(DRM), 12A I(T)RMS, TO-263AB, TO-263, D2PAK-3 LTE 栅 三端双向交流开关 栅极 |
| 文件： | 总8页 (文件大小：658K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Thyristors
12 Amp Alternistor (High Communitation) Triacs
RoHS
Qxx12xHx Series
Description
This 12 Amp bidirectional solid state switch series is
designed for AC switching and phase control applications
such as motor speed and temperature modulation controls,
lighting controls, and static switching relays.
Standard alternistor triac components operate with in-phase
signals in Quadrants I or III and ONLY unipolar negative gate
pulses for Quadrant II or III. The alternistor triac will not
operate in Quadrant IV. These are used in circuit applications
requiring a high dv/dt capability.
Agency Approval
Features & Benefits
• RoHS Compliant
contact bounce that
create voltage transients
Agency
Agency File Number
• Glass – passivated
junctions
E71639*
• No contacts to wear
out from reaction of
switching events
* - L Package Only
• Voltage capability up to
1000 V
• Restricted (or limited) RFI
generation, depending
on activation point sine
wave
• Surge capability up to
120 A
Main Features
Symbol
Value
Unit
A
• The L-package has
an isolation rating of
2500VRMS
IT(RMS)
12
• Requires only a small
gate activation pulse in
each half-cycle
VDRM/VRRM
IGT (Q1)
400, 600, 800 or 1000
V
• Solid-state switching
eliminates arcing or
10 or 50
mA
Schematic Symbol
Applications
Excellent for AC switching and phase control applications
such as heating, lighting, and motor speed controls.
MT2
MT1
Typical applications are AC solid-state switches, light
dimmers, power tools, lawn care equipment, home/brown
goods and white goods appliances.
G
AlternistorTriacs (no snubber required) are used in
applications with extremely inductive loads requiring
highest commutation performance.
Internally constructed isolated packages are offered for
ease of heat sinking with highest isolation voltage.
Additional Information
Datasheet
Resources
Samples
© 2018 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 11/27/18
Thyristors
12 Amp Alternistor (High Communitation) Triacs
Absolute Maximum Ratings — Alternistor (3 Quadrants)
Symbol
IT(RMS)
Parameter
RMS on-state current (full sine wave)
Value
Unit
Qxx12LHy
TC = 90°C
12
A
Qxx12RHy
Qxx12NHy
TC = 105°C
f = 50 Hz
f = 60 Hz
t = 20 ms
t = 16.7 ms
tp = 8.3 ms
TJ = 125°C
TJ = 125°C
TJ = 125°C
110
Non repetitive surge peak on-state current
(full cycle, TJ initial = 25°C)
ITSM
A
120
I2t
I2t Value for fusing
60
A2s
A/μs
A
di/dt
IGTM
PG(AV)
Tstg
TJ
Critical rate of rise of on-state current
Peak gate trigger current
f = 120 Hz
tp=20μs
70
4
Average gate power dissipation
Storage temperature range
0.5
W
-40 to 150
°C
Operating junction temperature range
-40 to 125
°C
Note: xx = voltage/10, y = sensitivity
Electrical Characteristics (TJ = 25°C, unless otherwise specified) — AlternistorTriac (3 Quadrants)
Symbol
IGT
Test Conditions
VD = 12V RL = 60 Ω
Quadrant
I – II – III
Qxx12xH2
Qxx12xH5
Unit
MAX.
MAX.
MIN.
MAX.
10
50
mA
VGT
VGD
IH
VD = 12V RL = 60 Ω
VD = VDRM RL = 3.3 kΩ TJ = 125°C
IT = 100mA
I – II – III
I – II – III
1.3
0.2
15
1.3
0.2
50
V
V
mA
400V
600V
800V
1000V
300
200
150
150
2
750
650
500
300
30
VD = VDRM Gate Open TJ = 125°C
dv/dt
MIN.
V/μs
VD = VDRM Gate Open TJ = 100°C
(di/dt)c = 6.5 A/ms TJ = 125°C
(dv/dt)c
tgt
MIN.
TYP.
V/μs
μs
IG = 2 x IGT PW = 15μs IT = 17.0 A(pk)
4
4
Static Characteristics
Symbol
Test Conditions
Value
1.60
10
Unit
V
VTM
ITM = 17.0A tp = 380 µs
MAX.
MAX.
TJ = 25°C
TJ = 125°C
TJ = 100°C
400-1000V
400-800V
1000V
μA
IDRM
IRRM
VD = VDRM / VRRM
2
mA
3
Thermal Resistances
Symbol
Parameter
Value
Unit
Qxx12RHy
Qxx12NHy
Qxx12LHy
Qxx12RHy
Qxx12LHy
1.2
Junction to case (AC)
°C/W
°C/W
Rθ(J-C)
2.3
45
90
Junction to ambient (AC)
Rθ(J-A)
ote: xx = voltage/10, y = sensitivity
© 2018 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 11/27/18
Thyristors
12 Amp Alternistor (High Communitation) Triacs
Figure 2: Normalized DC GateTrigger Current for
All Quadrants vs. JunctionTemperature
Figure 1: Definition of Quadrants
ALL POLARITIES ARE REFERENCED TO MT1
4.0
MT2 POSITIVE
(Positive Half Cycle)
+
MT2
MT2
3.0
(-)
I
(+)
I
GATE
GT
GT
GATE
MT1
MT1
2.0
1.0
0.0
REF
MT2
REF
MT2
QII QI
QIII QIV
I
-
+ I
GT
GT
(-)
I
(+)
I
GATE
GT
GT
GATE
MT1
REF
MT1
REF
-65
-40
-15
10
35
60
85
110
-
Junction Temperature (TJ) - C
MT2 NEGATIVE
(Negative Half Cycle)
Note: Alternistors will not operate in QIV
Figure 3: Normalized DC Holding Current
vs. JunctionTemperature
Figure 4: Normalized DC GateTriggerVoltage for
All Quadrants vs. JunctionTemperature
4.0
3.0
2.0
1.0
0.0
2.0
1.5
1.0
0.5
0.0
-65
-40
-15
10
35
60
85
110
-65
-40
-15
10
35
60
85
110
Junction Temperature (TJ) - ºC
Junction Temperature (TJ) - ºC
Figure 5: Power Dissipation (Typical)
vs. RMS On-State Current
Figure 6: Maximum Allowable CaseTemperature
vs. On-State Current
130
14
CURRENT WAVEFORM: Sinusoidal
LOAD: Resistive or Inductive
CONDUCTION ANGLE: 360°
Qxx12RH5
Qxx12NH5
12
120
10
8
110
100
Qxx12LH5
6
90
4
80
CURRENT WAVEFORM: Sinusoidal
LOAD: Resistive or Inductive
CONDUCTION ANGLE: 360°
2
70
60
0
0
2
4
6
8
10
12
14
0
2
4
6
8
10
12
14
RMS On-State Current [IT(RMS)] -- Amps
RMS On-State Current [IT(RMS)] - Amps
© 2018 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 11/27/18
Thyristors
12 Amp Alternistor (High Communitation) Triacs
Figure 7: Maximum Allowable AmbientTemperature
vs. On-State Current
Figure 8: On-State Current vs. On-StateVoltage
(Typical)
20
120
CURRENTWAVEFORM: Sinusoidal
18
LOAD: Resistive or Inductive
CONDUCTION ANGLE: 360
FREE AIR RATING - No HEAT SINK
110
100
90
TC = 25ºC
16
14
12
10
8
80
70
60
6
50
4
40
2
30
0
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
20
0.
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
Positive or Negative Instantaneous On-State Voltage
(VT) - Volts
RMS On-State Current [IT(RMS)] - AMPS
Figure 9: Surge Peak On-State Current vs. Number of Cycles
1000
Supply Frequency: 60Hz Sinusoidal
Load: Resistive
RMS On-State Current [I T(RMS) : Maximum]
Rated Value at Specific Case Temperature
100
10
1
Notes:
1. Gate control may be lost during and immediately
following surge current interval.
2. Overload may not be repeated until junction
temperature has returned to steady-state
rated value.
1
10
100
1000
Surge Current Duration - Full Cycles
© 2018 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 11/27/18
Thyristors
12 Amp Alternistor (High Communitation) Triacs
Soldering Parameters
Reflow Condition
Pb – Free assembly
tP
TP
-Temperature Min (Ts(min)
)
150°C
Ramp-up
TL
TS(max)
Pre Heat -Temperature Max (Ts(max)
)
200°C
tL
-Time (min to max) (ts)
60 – 180 secs
Ramp-down
Preheat
Average ramp up rate (LiquidusTemp)
(TL) to peak
5°C/second max
TS(min)
tS
TS(max) toTL - Ramp-up Rate
5°C/second max
217°C
-Temperature (TL) (Liquidus)
Reflow
25
time to peak temperature
-Time (min to max) (ts)
60 – 150 seconds
260+0/-5 °C
Time
PeakTemperature (TP)
Time within 5°C of actual peak
Temperature (tp)
20 – 40 seconds
Ramp-down Rate
5°C/second max
8 minutes Max.
280°C
Time 25°C to peakTemperature (TP)
Do not exceed
Physical Specifications
Environmental Specifications
Test
AC Blocking
Specifications and Conditions
Terminal Finish
Body Material
100% MatteTin-plated
MIL-STD-750, M-1040, Cond A Applied
Peak AC voltage @ 125°C for 1008 hours
UL Recognized compound meeting
flammability rating V-0
MIL-STD-750, M-1051,
100 cycles; -40°C to +150°C; 15-min
dwell time
Temperature Cycling
Terminal Material
Copper Alloy
EIA / JEDEC, JESD22-A101
1008 hours; 320V - DC: 85°C; 85%
rel humidity
Temperature/
Humidity
MIL-STD-750, M-1031,
1008 hours; 150°C
HighTemp Storage
Low-Temp Storage
Design Considerations
1008 hours; -40°C
Careful selection of the correct component for the
application’s operating parameters and environment will
go a long way toward extending the operating life of the
Thyristor. Good design practice should limit the maximum
continuous current through the main terminals to 75% of
the component rating. Other ways to ensure long life for
a power discrete semiconductor are proper heat sinking
and selection of voltage ratings for worst case conditions.
Overheating, overvoltage (including dv/dt), and surge
currents are the main killers of semiconductors. Correct
mounting, soldering, and forming of the leads also help
protect against component damage.
Resistance to
Solder Heat
MIL-STD-750 Method 2031
Solderability
Lead Bend
ANSI/J-STD-002, category 3, Test A
MIL-STD-750, M-2036 Cond E
© 2018 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 11/27/18
Thyristors
12 Amp Alternistor (High Communitation) Triacs
Dimensions —TO-220AB (R-Package) — Non-Isolated MountingTab Common with Center Lead
TC MEASURING POINT
AREA (REF.) 0.17 IN2
Inches
Millimeters
Min
O
Dimension
8.13
.320
A
Ø
E
Min
Max
Max
10.67
2.92
6.35
15.75
3.73
3.30
14.61
0.89
5.21
2.67
1.91
P
MT2
A
B
C
D
E
0.380
0.105
0.230
0.590
0.142
0.110
0.540
0.025
0.195
0.095
0.060
0.085
0.018
0.178
0.045
0.038
0.420
0.115
0.250
0.620
0.147
0.130
0.575
0.035
0.205
0.105
0.075
0.095
0.024
0.188
0.060
0.048
9.65
2.67
5.84
14.99
3.61
2.79
13.72
0.64
4.95
2.41
1.52
B
C
13.36
.526
D
7.01
.276
NOTCH IN
GATE LEAD
TO ID.
NON-ISOLATED
TAB
F
F
G
H
J
R
G
L
H
K
K
N
L
J
M
MT1 MT2
GATE
M
N
O
P
2.16
0.46
4.52
1.14
2.41
0.61
4.78
1.52
Note: Maximum torque to
be applied to mounting tab
is 8 in-lbs. (0.904 Nm).
R
0.97
1.22
Dimensions —TO-220AB (L-Package) — Isolated MountingTab
TC MEASURING POINT
AREA (REF.) 0.17 IN2
Inches
Millimeters
Dimension
O
8.13
.320
Min
Max
Min
9.65
2.67
5.84
14.99
3.61
2.79
13.72
0.64
4.95
2.41
1.52
Max
10.67
2.92
6.35
15.75
3.73
3.30
14.61
0.89
5.21
2.67
1.91
A
Ø
E
P
A
B
C
D
E
0.380
0.105
0.230
0.590
0.142
0.110
0.540
0.025
0.195
0.095
0.060
0.085
0.018
0.178
0.045
0.038
0.420
0.115
0.250
0.620
0.147
0.130
0.575
0.035
0.205
0.105
0.075
0.095
0.024
0.188
0.060
0.048
B
C
13.36
.526
D
7.01
.276
F
F
G
H
J
R
G
L
H
K
K
N
L
Note: Maximum torque to
be applied to mounting tab
is 8 in-lbs. (0.904 Nm).
J
MT1 MT2
M
M
N
O
P
2.16
0.46
4.52
1.14
2.41
0.61
4.78
1.52
GATE
R
0.97
1.22
© 2018 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 11/27/18
Thyristors
12 Amp Alternistor (High Communitation) Triacs
Dimensions —TO-263AB (N-Package) — D2Pak Surface Mount
TC MEASURING POINT
AREA: 0.11 IN2
Inches
Millimeters
Min
C
B
V
Dimension
E
MT2
Min
Max
0.370
0.420
0.188
0.035
0.060
0.075
0.105
0.102
0.024
0.110
0.625
0.045
0.010
0.070
Max
9.40
10.67
4.78
0.89
1.52
8.41
.331
A
B
C
D
E
0.360
0.380
0.178
0.025
0.045
0.060
0.095
0.092
0.018
0.090
0.590
0.035
0.002
0.040
9.14
9.65
4.52
0.64
1.14
7.01
.276
A
S
W
U
J
K
GATE
MT1
8.13
.320
G
H
D
F
F
1.52
2.41
2.34
0.46
2.29
14.99
0.89
0.05
1.02
1.91
G
H
J
2.67
2.59
0.61
2.79
15.88
1.14
1168
.460
2.16
.085
7.01
.276
7.01
K
.276
16.89
.665
S
8.89
.350
1.40
.055
V
3.81
.150
U
W
0.25
1.78
2.03
.080
6.60
.260
Product Selector
Voltage
Gate Sensitivity Quadrants
Part Number
Type
Package
400V
600V
800V 1000V
I – II – III
10 mA
10 mA
10 mA
50 mA
50 mA
50 mA
Qxx12LH2
Qxx12RH2
Qxx12NH2
Qxx12LH5
Qxx12RH5
Qxx12NH5
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
AlternistorTriac
AlternistorTriac
AlternistorTriac
AlternistorTriac
AlternistorTriac
AlternistorTriac
TO-220L
TO-220R
TO-263 D²-PAK
TO-220L
X
X
X
X
X
X
TO-220R
TO-263 D²-PAK
Packing Options
Part Number
Qxx12L/RHyTP
Qxx12NHyTP
Qxx12NHyRP
Marking
Weight
2.2 g
1.6 g
Packing Mode
Tube Pack
Base Quantity
Qxx12L/RHy
Qxx12NHy
Qxx12NHy
500 (50 per tube)
500 (50 per tube)
500
Tube
1.6 g
Embossed Carrier
Note: xx = Voltage/10; y = Sensitivity
© 2018 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 11/27/18
Thyristors
12 Amp Alternistor (High Communitation) Triacs
TO-263 Embossed Carrier Reel Pack (RP)
Meets all EIA-481-2 Standards
0.63
(16.0)
0.157
(4.0)
Gate
MT1
0.059
(1.5)
DIA
0.945
(24.0)
0.827
(21.0)
*
*
Cover tape
MT2
12.99
(330.0)
0.512 (13.0) Arbor
Hole Dia.
Dimensions
are in inches
(and millimeters).
1.01
(25.7)
Direction of Feed
Part Numbering System
Q 60 12 L H5 56
Part Marking System
TO-220 AB - (L and R Package)
TO-263 AB - (N Package)
LEAD FORM DIMENSIONS
DEVICE TYPE
Q: Alternistor
xx: Lead Form Option
VOLTAGE RATING
40: 400V
60: 600V
SENSITIVITY & TYPE
H2: 10mA (QI, II, III)
H5: 50mA (QI, II, III)
Q6012RH5
M
Y
80: 800V
®
K0: 1000V
PACKAGE TYPE
CURRENT RATING
12: 12A
L : TO-220 Isolated
R : TO-220 Non-Isolated
N : TO-263 (D2Pak)
Date Code Marking
Y:Year Code
M: Month Code
XXX: Lot Trace Code
© 2018 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 11/27/18
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