QJXX08DH4 [LITTELFUSE]
8 Amp High Temperature Sensitive & Alternistor (High Commutation) Triacs;
| 型号： | QJXX08DH4 |
| 厂家： | 
LITTELFUSE |
| 描述： | 8 Amp High Temperature Sensitive & Alternistor (High Commutation) Triacs |
| 文件： | 总8页 (文件大小：497K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Thyristors
8 Amp High Temperature Sensitive & Alternistor (High Commutation) Triacs
RoHS
LJxx08xx & QJxx08xHx Series
Description
This 8 A HighTemperature AlternistorTriac solid state
switch series is designed for AC switching and phase
control applications such as motor speed and temperature
modulation controls, lighting controls, and static switching
relays.
Sensitive type components guarantee gate control in
Quadrants I & IV as needed for digital control circuitry.
Alternistor type components only operate in quadrants I, II,
& III and are used in circuits requiring high dv/dt capability.
Features & Benefits
Main Features
• 150°C maximum junction
temperature
• Restricted (or limited) RFI
generation, depending on
activation point of
Symbol
Value
8
Unit
A
IT(RMS)
• Voltage capability up
to 600V
sine wave
VDRM/VRRM
400 or 600
10 to 35
V
• Requires only a short gate
activation pulse in each
half-cycle
IGT (Q1)
mA
• Surge capability up
to 84A at 60Hz half cycle
• Solid-state switching
eliminates arcing or
contact bounce that
create voltage transients
• Halogen free and RoHS
compliant
Schematic Symbol
• No contacts to wear out
from reaction of switching
events
MT2
MT1
Applications
G
Excellent for AC switching and phase control applications
such as heating, lighting, and motor speed controls.
Typical applications are AC solid-state switches, light
dimmers, power tools, home/brown goods and white
goods appliances.
AlternistorTriacs (no snubber required) are used in
applications with high inductive loads requiring the highest
commutation performance.
Internally constructed isolated packages are offered for
ease of heat sinking with highest isolation voltage.
©2019 Littelfuse, Inc.
Specifications are subject to change without notice.
Revision: 06/04/19
Thyristors
8 Amp High Temperature Sensitive & Alternistor (High Commutation) Triacs
Absolute Maximum Ratings — SensitiveTriac (4 Quadrants)
Symbol
DSM/VRSM
IT(RMS)
Parameter
Value
Unit
V
Peak non-repetitive blocking voltage
RMS on-state current (full sine wave)
PW=100 μs
LJxx08Vy/LJxx08Dy
700
8
V
A
TC = 130°C
t = 20 ms
f = 50 Hz
f = 60 Hz
70
84
29
Non repetitive surge peak on-state current
(full cycle, TJ initial = 25°C)
ITSM
A
t = 16.7 ms
I2t
I2t Value for fusing
tp = 8.3 ms
A2s
Critical rate of rise of on-state current
di/dt
f = 60 Hz
tp=20μs
TJ = 150°C
150
A/μs
IG = 50mA with 0.1µs rise time
IGTM
PG(AV)
Tstg
Peak gate trigger current
TJ = 150°C
TJ = 150°C
4
A
Average gate power dissipation
Storage temperature range
Operating junction temperature range
0.3
W
°C
°C
-40 to 150
-40 to 150
TJ
Note: xx=voltage/10, y = sensitivity
Absolute Maximum Ratings — Alternistor (3 Quadrants)
Symbol
DSM/VRSM
IT(RMS)
Parameter
Value
Unit
V
Peak non-repetitive blocking voltage
RMS on-state current (full sine wave)
PW=100 μs
QJxx08VHy/QJxx08DHy
700
V
A
TC = 120°C
8
f = 50 Hz
f = 60 Hz
t = 20 ms
-
70
Non repetitive surge peak on-state current
(full cycle, TJ initial = 25°C)
ITSM
A
t = 16.7 ms
-
84
I2t
di/dt
IGTM
PG(AV)
Tstg
I2t Value for fusing
Critical rate of rise of on-state current
Peak gate trigger current
tp = 8.3 ms
f = 60 Hz
-
29
70
A2s
A/μs
A
TJ = 150°C
tp=20μs
TJ = 150°C
TJ = 150°C
IGT = 10mA
-
-
4
Average gate power dissipation
0.4
W
Storage temperature range
-40 to 150
-40 to 150
°C
TJ
Operating junction temperature range
°C
Note: xx=voltage/10, y = sensitivity
Electrical Characteristics (TJ = 25°C, unless otherwise specified) — SensitiveTriac (4 Quadrants)
Symbol
Test Conditions
Quadrant
LJxx08x8
Unit
I – II – III
IV
10
20
IGT
MAX.
mA
VD = 12V RL = 60 Ω
VGT
VGD
IH
ALL
ALL
MAX.
MIN.
MAX.
1.3
0.15
25
80
50
2
V
V
VD = VDRM RL = 3.3 kΩ TJ = 150°C
IT = 100mA
mA
400V
600V
dv/dt
VD = VDRM Gate Open TJ = 150°C
TYP.
V/μs
(dv/dt)c
(di/dt)c = 4.3 A/ms TJ = 150°C
IG = 100mA PW = 15µs IT = 11.3 A(pk)
TYP.
TYP.
V/μs
μs
tgt
12
Note: xx=voltage/10, x = package,
©2019 Littelfuse, Inc.
Specifications are subject to change without notice.
Revision: 06/04/19
Thyristors
8 Amp High Temperature Sensitive & Alternistor (High Commutation) Triacs
Electrical Characteristics (TJ = 25°C, unless otherwise specified) — AlternistorTriac (3 Quadrants)
Symbol
Test Conditions
Quadrant
MAX.
QJxx08xH2
QJxx08xH3
QJxx08xH4
Unit
IGT
VGT
VGD
IH
I – II – III
I – II – III
I – II – III
10
20
1.3
35
mA
V
VD = 12V RL = 60 Ω
MAX.
MIN.
MAX.
VD = VDRM RL = 3.3 kΩ TJ = 150°C
IT = 100mA
0.15
30
V
25
150
100
15
35
350
250
20
mA
400V
600V
250
200
18
dv/dt
V
D = VDRM Gate OpenTJ = 150°C
MIN.
V/μs
(dv/dt)c
tgt
(di/dt)c = 4.3 A/ms TJ = 150°C
IG = 100mA PW = 15µs IT = 11.3 A(pk)
MIN.
TYP.
V/μs
μs
10
10
10
Note: xx=voltage/10, x = package
Static Characteristics
Symbol
Test Conditions
ITM = 11.3A tp = 380 µs
Value
Unit
VTM
MAX.
1.50
10
0.5
3
V
TJ = 25°C
μA
LJxx08xy
TJ = 125°C
TJ = 150°C
TJ = 25°C
TJ = 125°C
TJ = 150°C
mA
μA
IDRM
VDRM = VRRM
MAX.
10
0.5
3
IRRM
QJxx08xHy
mA
Note: xx=voltage/10, x=package, y = sensitivity
Thermal Resistances
Symbol
RƟ(JC)
Parameter
Value
1.5
Unit
°C/W
°C/W
Junction to case (AC)
Junction to ambient
RƟ(J-A)
70
Figure 2: Normalized DC GateTrigger Current for
All Quadrants vs. JunctionTemperature
Figure 1: Definition of Quadrants
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
ALL POLARITIES ARE REFERENCED TO MT1
MT2 POSITIVE
(Positive Half Cycle)
+
MT2
MT2
(-)
I
(+)
I
GT
GT
GATE
GATE
MT1
MT1
REF
REF
QII QI
I
-
+I
GT
GT
QIII QIV
MT2
MT2
(-)
I
(+)
I
GT
GT
GATE
GATE
MT1
REF
MT1
REF
-
-40
-15
10
35
60
85
110
135 150
MT2 NEGATIVE
(Negative Half Cycle)
Junction Temperature (TJ)- ºC
Note: Alternistors will not operate in QIV
©2019 Littelfuse, Inc.
Specifications are subject to change without notice.
Revision: 06/04/19
Thyristors
8 Amp High Temperature Sensitive & Alternistor (High Commutation) Triacs
Figure 3: Normalized DC Holding Current
vs. JunctionTemperature
Figure 4: Normalized DC GateTriggerVoltage for
All Quadrants vs. JunctionTemperature
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
1.6
1.2
0.8
0.4
0
150
-40
-15
10
35
60
85
110
135
-40
-15
10
35
60
85
110
135 150
JunctionTemperature (T )- ºC
J
JunctionTemperature (T )- ºC
J
Figure 5: Power Dissipation (Typical)
vs. RMS On-State Current
Figure 6: Maximum Allowable CaseTemperature
vs. On-State Current
8
7
6
5
4
3
2
1
0
160
150
QJxx08VHy/
QJxx08DHy
140
130
120
LJxx08Vy/
LJxx08Dy
110
100
90
80
0
2
4
6
8
0
2
4
6
8
10
RMS On-State Current (IT(RMS)) - Amps
RMS On-State Current (IT(RMS)) - Amps
Figure 7: On-State Current vs. On-StateVoltage
(Typical)
20
18
16
14
12
10
8
6
4
2
0
0.6
0.8
1
1.2
1.4
1.6
1.8
Postitive or Negative Instantaneous
On-StateVoltage (vT) -Volts
©2019 Littelfuse, Inc.
Specifications are subject to change without notice.
Revision: 06/04/19
Thyristors
8 Amp High Temperature Sensitive & Alternistor (High Commutation) Triacs
Figure 8: Surge Peak On-State Current vs. Number of Cycles
100
10
1
SUPPLY FREQUENCY: 60 Hz Sinusoidal
LOAD: Resistive
RMS On-State Current: [IT(RMS)]: Maximum Rated
Value at Specified Case Temperature
Notes:
1. Gate control may be lost during and immediately
following surge current interval.
2. Overload may not be repeated until junction
temperature has returned to steady-state
rated value.
1
10
100
1000
Surge Current Duration- Full Cycles
Soldering Parameters
Reflow Condition
Pb – Free assembly
150°C
tP
TP
-Temperature Min (Ts(min)
-Temperature Max (Ts(max)
-Time (min to max) (ts)
)
Ramp-up
Pre Heat
)
200°C
TL
TS(max)
60 – 180 secs
tL
Average ramp up rate (LiquidusTemp) (TL) to
peak
Ramp-down
Preheat
5°C/second max
TS(min)
TS(max) toTL - Ramp-up Rate
5°C/second max
217°C
tS
-Temperature (TL) (Liquidus)
Reflow
-Time (tL)
60 – 150 seconds
260+0/-5 °C
25
time to peak temperature
PeakTemperature (TP)
Time
Time within 5°C of actual peakTemperature
(tp)
20 – 40 seconds
Environmental Specifications
Ramp-down Rate
5°C/second max
8 minutes Max.
280°C
Test
Specifications and Conditions
Time 25°C to peakTemperature (TP)
Do not exceed
MIL-STD-750, M-1040, Cond A Applied Peak
AC voltage @ 150°C for 1008 hours
AC Blocking (VDRM
)
MIL-STD-750, M-1051,
1000 cycles; -55°C to +150°C; 15-min dwell-
time
Physical Specifications
Temperature Cycling
Terminal Finish
Body Material
100% MatteTin-plated
EIA / JEDEC, JESD22-A101
1008 hours; 160V - DC: 85°C; 85%
rel humidity
Temperature/Humidity
UL Recognized compound meeting flammability
rating V-0.
MIL-STD-750, M-1031,
1008 hours; 150°C
HighTemp Storage
Low-Temp Storage
Terminal Material
Copper Alloy
1008 hours; -40°C
Design Considerations
Resistance to
Solder Heat
MIL-STD-750 Method 2031
Careful selection of the correct component for the application’s
operating parameters and environment will go a long way toward
extending the operating life of theThyristor. Good design practice
should limit the maximum continuous current through the main
terminals to 75% of the component rating. Other ways to ensure
long life for a power discrete semiconductor are proper heat
sinking and selection of voltage ratings for worst case conditions.
Overheating, overvoltage (including dv/dt), and surge currents are
the main killers of semiconductors. Correct mounting, soldering, and
forming of the leads also help protect against component damage.
Solderability
Lead Bend
ANSI/J-STD-002, category 3, Test A
MIL-STD-750, M-2036 Cond E
©2019 Littelfuse, Inc.
Specifications are subject to change without notice.
Revision: 06/04/19
Thyristors
8 Amp High Temperature Sensitive & Alternistor (High Commutation) Triacs
Dimensions —TO-251AA (V-Package) —V-PAKThrough Hole
TC MEASURING POINT
AREA: 0.040 IN2
Inches
Typ
Millimeters
Typ
Dimension
Min
Max
Min
Max
E
H
J
5.28
.208
MT2
A
D
A
B
C
D
E
F
0.037
0.235
0.350
0.205
0.255
0.027
0.087
0.085
0.176
0.018
0.035
0.018
0.042
0.034
0.034
0.074
0.040
0.242
0.361
0.208
0.262
0.031
0.090
0.092
0.180
0.020
0.037
0.020
0.047
0.039
0.039
0.079
0.043
0.245
0.375
0.213
0.265
0.033
0.093
0.095
0.184
0.023
0.039
0.023
0.052
0.044
0.044
0.084
0.94
5.97
8.89
5.21
6.48
0.69
2.21
2.16
4.47
0.46
0.90
0.46
1.06
0.86
0.86
1.86
1.01
6.15
9.18
5.29
6.66
0.80
2.28
2.34
4.57
0.51
0.95
0.52
1.20
1.00
1.00
2.00
1.09
6.22
9.53
5.41
6.73
0.84
2.36
2.41
4.67
0.58
1.00
0.58
1.32
1.11
5.34
.210
B
R
P
Q
S
G
H
I
K
C
J
K
L
MT1
L
F
P
Q
R
S
MT2
GATE
G
I
1.11
2.11
Dimensions —TO-252AA (D-Package) — D-PAK Surface Mount
E
6.71
.264
MT2
A
Inches
Typ
Millimeters
Typ
5.28
.208
TC MEASURING POINT
D
Dimension
Min
Max
Min
Max
6.71
.264
A
B
C
D
E
0.037
0.235
0.106
0.205
0.255
0.027
0.087
0.085
0.176
0.018
0.035
0.018
0.000
0.021
0°
0.040
0.243
0.108
0.208
0.262
0.031
0.090
0.092
0.179
0.020
0.037
0.020
0.000
0.026
0°
0.043
0.245
0.113
0.213
0.265
0.033
0.093
0.095
0.184
0.023
0.039
0.023
0.004
0.027
5°
0.94
5.97
2.69
5.21
6.48
0.69
2.21
2.16
4.47
0.46
0.90
0.46
0.00
0.53
0°
1.01
6.16
2.74
5.29
6.65
0.80
2.28
2.33
4.55
0.51
0.95
0.51
0.00
0.67
0°
1.09
6.22
2.87
5.41
6.73
0.84
2.36
2.41
4.67
0.58
1.00
0.58
0.10
0.69
5°
5.34
.210
B
1.60
.063
P
Q
C
1.80
.071
GATE
F
AREA: 0.040 IN2
Connects to MT2
MT1
MT2
3
.118
4.60
.181
F
G
G
H
I
I
L
O
H
K
J
J
M
N
K
L
M
N
O
P
0.042
0.034
0.047
0.039
0.052
0.044
1.06
0.86
1.20
1.00
1.32
1.11
Q
©2019 Littelfuse, Inc.
Specifications are subject to change without notice.
Revision: 06/04/19
Thyristors
8 Amp High Temperature Sensitive & Alternistor (High Commutation) Triacs
Product Selector
Voltage
Gate Sensitivity Quadrants
Part Number
Type
Package
400V
600V
I – II – III
10mA
10mA
10mA
10mA
20mA
20mA
35mA
35mA
IV
LJxx08D8
LJxx08V8
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
20mA
SensitiveTriac
SensitiveTriac
AlternistorTriac
AlternistorTriac
AlternistorTriac
AlternistorTriac
AlternistorTriac
AlternistorTriac
TO-252 D-PAK
TO-251 V-PAK
TO-252 D-PAK
TO-251 V-PAK
TO-252 D-PAK
TO-251 V-PAK
TO-252 D-PAK
TO-251 V-PAK
20mA
QJxx08DH2
QJxx08VH2
QJxx08DH3
QJxx08VH3
QJxx08DH4
QJxx08VH4
Note: xx=voltage/10
-
-
-
-
-
-
Packing Options
Part Number
Marking
Weight
Packing Mode
Base Quantity
LJxx08D8TP
LJxx08D8RP
LJxx08D8
LJxx08D8
0.3g
0.3g
0.4g
0.3g
0.3g
0.3g
0.3g
0.3g
0.4g
0.3g
0.3g
0.4g
Tube Pack
Embossed Carrier
Tube Pack
750(75 per tube)
2500
LJxx08V8TP
LJxx08V8
750(75 per tube)
750(75 per tube)
750(75 per tube)
2500
QJxx06VH2TP
QJxx08DH2TP
QJxx08DH2RP
QJxx08DH3TP
QJxx08DH3RP
QJxx08VH3TP
QJxx08DH4TP
QJxx08DH4RP
QJxx08VH4TP
QJxx08VH2
QJxx08DH2
QJxx08DH2
QJxx08DH3
QJxx08DH3
QJxx08VH3
QJxx08DH4
QJxx08DH4
QJxx08VH4
Tube Pack
Tube Pack
Embossed Carrier
Tube Pack
750(75 per tube)
2500
Embossed Carrier
Tube Pack
750(75 per tube)
750(75 per tube)
2500
Tube Pack
Embossed Carrier
Tube Pack
750(75 per tube)
Note: xx=voltage/10
Part Numbering System
QJ 60 08 V 8
Part Marking System
LJ6008V8
SENSITIVITY & TYPE
Sensitive Triac:
COMPONENT TYPE
LJ : HT Sensitive Triac
QJ : HT Triac or Alternistor
8
:
10 mA (QI, II, III)
20 mA (QIV)
Alternistor Triac:
H2 : 10mA(QI,II,III)
H3 : 20mA(QI,II,III)
H4 : 35mA(QI,II,III)
VOLTAGE RATING
40 : 400V
60 : 600V
YMLDD
®
Date Code Marking
Y:Year Code
M: Month Code
L: Location Code
DD: Calendar Code
PACKAGE TYPE
V : TO-251 (VPAK)
D : TO-252 (DPAK)
CURRENT
08: 8A
©2019 Littelfuse, Inc.
Specifications are subject to change without notice.
Revision: 06/04/19
Thyristors
8 Amp High Temperature Sensitive & Alternistor (High Commutation) Triacs
TO-252 Embossed Carrier Reel Pack (RP) Specifications
Meets all EIA-481-2 Standards
0.157
(4.0)
12.99
0.059
(1.5)
Dia
(330.0)
0.512 (13.0) Arbor
Hole Dia.
Dimensions
are in inches
(and millimeters).
Gate
MT1
0.63
0.524
(13.3)
*
(16.0)
0.64
(16.3)
0.315
(8.0)
Direction of Feed
*
Cover tape
MT2
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and
test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications.
Read complete Disclaimer Notice at http://www.littelfuse.com/disclaimer-electronics.
©2019 Littelfuse, Inc.
Specifications are subject to change without notice.
Revision: 06/04/19
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