R0472YS16E_技术文档

Date:- 30 Jun, 2008

Data Sheet Issue:- 1

WESTCODE

An IXYS Company

Distributed Gate Thyristor

Types R0472YS12# to R0472YS16#

(Old Type Number: R210SH16H1R)

Absolute Maximum Ratings

MAXIMUM

LIMITS

VOLTAGE RATINGS

UNITS

V_DRM

V_DSM

V_RRM

V_RSM

Repetitive peak off-state voltage, (note 1)

Non-repetitive peak off-state voltage, (note 1)

Repetitive peak reverse voltage, (note 1)

Non-repetitive peak reverse voltage, (note 1)

1200 -1600

V

1200 -1600

1300 - 1700

MAXIMUM

LIMITS

472

OTHER RATINGS

UNITS

I_T(AV)M

I_T(RMS)

I_T(d.c.)

I_TSM

Maximum average on-state current, T_sink=55°C, (note 2)

Maximum average on-state current. T_sink=85°C, (note 2)

Maximum average on-state current. T_sink=85°C, (note 3)

Nominal RMS on-state current, T_sink=25°C, (note 2)

D.C. on-state current, T_sink=25°C, (note 4)

Peak non-repetitive surge t_p=10ms, V_rm=60%V_RRM, (note 5)

Peak non-repetitive surge t_p=10ms, V_rm≤10V, (note 5)

I²t capacity for fusing t_p=10ms, V_rm=60%V_RRM, (note 5)

I²t capacity for fusing t_p=10ms, V_rm≤10V, (note 5)

Critical rate of rise of on-state current (repetitive), (Note 6)

Critical rate of rise of on-state current (non-repetitive), (Note 6)

Peak reverse gate voltage

A

316

185

A

945

A

789

A

4300

A

I_TSM2

4700

A

I²t

92.5×10³

110.5×10³

500

A²s

A/µs

V

I²t

(di/dt)_cr

1000

V_RGM

P_G(AV)

P_GM

5

Mean forward gate power

2

W

Peak forward gate power

30

W

T_{j op}

Operating temperature range

-40 to +125

-40 to +150

°C

T_stg

Storage temperature range

Notes:-

1) De-rating factor of 0.13% per °C is applicable for T_jbelow 25°C.

2) Double side cooled, single phase; 50Hz, 180° half-sinewave.

3) Single side cooled, single phase; 50Hz, 180° half-sinewave.

4) Double side cooled.

5) Half-sinewave, 125°C T_jinitial.

6) V_D=67% V_DRM, I_FG=2A, t_r≤0.5µs, T_case=125°C.

Data Sheet. Types R0472YS12# to R0472YS16# AD Issue 1

Page 1 of 12

June, 2008

WESTCODE An IXYS Company

Distributed Gate Thyristor types R0472YS12# to R0472YS16#

Characteristics

PARAMETER

MIN.

TYP. MAX. TEST CONDITIONS (Note 1)

UNITS

V_TM

V_T0

r_T

Maximum peak on-state voltage

Threshold voltage

-

2.80 I_TM=1000A

3.24 I_TM=1416A

1.648

V

-

V

Slope resistance

-

1.125

mΩ

V/µs

mA

V

(dv/dt)_crCritical rate of rise of off-state voltage

200

-

V_D=80% V_DRM, Linear ramp, Gate o/c

I_DRM

I_RRM

V_GT

I_GT

V_GD

I_H

Peak off-state current

Peak reverse current

-

60

Rated V_DRM

Rated V_RRM

-

60

Gate trigger voltage

-

3.0

200

T_j=25°C

V_D=10V, I_T=3A

Gate trigger current

-

mA

V

Gate non-trigger voltage

Holding current

-

0.25 Rated V_DRM

1000 T_j=25°C

-

mA

t_gd

Gate controlled turn-on delay time

Turn-on time

0.4

1.0

155

70

60

2.5

1.0

2.0

175

-

V_D=67% V_DRM, I_TM=2000A, di/dt=60A/µs,

µs

I

_FG=2A, t_r=0.5µs, T_j=25°C

t_gt

Q_rr

Q_ra

I_rm

Recovered charge

µC

A

Recovered charge, 50% Chord

Reverse recovery current

Reverse recovery time, 50% Chord

I

_TM=550A, t_p=500µs, di/dt=40A/µs, V_r=50V

-

t_rr

-

µs

I_TM=550A, t_p=500µs, di/dt=40A/µs, V_r=50V,

V_dr=80%V_DRM, dV_dr/dt=20V/µs

20

25

-

40

50

t_q

Turn-off time (note 2)

µs

I_TM=550A, t_p=500µs, di/dt=40A/µs, V_r=50V,

V_dr=80%V_DRM, dV_dr/dt=200V/µs

-

0.05 Double side cooled

K/W

kN

R_thJK

Thermal resistance, junction to heatsink

0.10 Single side cooled

F

Mounting force

Weight

5

-

9

-

W_t

90

kg

Notes:-

1) Unless otherwise indicated T_j=125°C.

2) The required t_q(specified with dV_dr/dt=200V/µs) is represented by a ‘#’ in the device part number. See ordering information for

details of t_qcodes.

Data Sheet. Types R0472YS12# to R0472YS16# AD Issue 1

Page 2 of 12

June, 2008

WESTCODE An IXYS Company

Distributed Gate Thyristor types R0472YS12# to R0472YS16#

Notes on Ratings and Characteristics

1.0 Voltage Grade Table

V

_DRMV_DSMV_RRM

V_RSM

V

V_DV_R

DC V

810

Voltage Grade

V

1200

1400

1600

1200

1400

1600

1300

1500

1700

930

1020

2.0 Extension of Voltage Grades

This report is applicable to other and higher voltage grades when supply has been agreed by

Sales/Production.

3.0 Extension of Turn-off Time

This Report is applicable to other t_q/re-applied dv/dt combinations when supply has been agreed by

Sales/Production.

4.0 Repetitive dv/dt

Higher dv/dt selections are available up to 1000V/µs on request.

5.0 De-rating Factor

A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for T_jbelow 25°C.

6.0 Snubber Components

When selecting snubber components, care must be taken not to use excessively large values of snubber

capacitor or excessively small values of snubber resistor. Such excessive component values may lead to

device damage due to the large resultant values of snubber discharge current. If required, please consult

the factory for assistance.

7.0 Rate of rise of on-state current

The maximum un-primed rate of rise of on-state current must not exceed 1000A/µs at any time during

turn-on on a non-repetitive basis. For repetitive performance, the on-state rate of rise of current must not

exceed 500A/µs at any time during turn-on. Note that these values of rate of rise of current apply to the

total device current including that from any local snubber network.

8.0 Gate Drive

The nominal requirement for a typical gate drive is illustrated below. An open circuit voltage of at least 30V

is assumed. This gate drive must be applied when using the full di/dt capability of the device.

I_GM

4A/µs

I_G

t_p1

The magnitude of I_GMshould be between five and ten times I_GT, which is shown on page 2. Its duration

(t_p1) should be 20µs or sufficient to allow the anode current to reach ten times I_L, whichever is greater.

Otherwise, an increase in pulse current could be needed to supply the necessary charge to trigger. The

‘back-porch’ current I_Gshould remain flowing for the same duration as the anode current and have a

magnitude in the order of 1.5 times I_GT.

Data Sheet. Types R0472YS12# to R0472YS16# AD Issue 1

Page 3 of 12

June, 2008

WESTCODE An IXYS Company

Distributed Gate Thyristor types R0472YS12# to R0472YS16#

9.0 Frequency Ratings

The curves illustrated in figures 10 to 18 are for guidance only and are superseded by the maximum

ratings shown on page 1.

10.0 Square wave ratings

These ratings are given for load component rate of rise of forward current of 100 and 500 A/µs.

11.0 Duty cycle lines

The 100% duty cycle is represented on all the ratings by a straight line. Other duties can be included as

parallel to the first.

12.0 Maximum Operating Frequency

The maximum operating frequency is set by the on-state duty, the time required for the thyristor to turn off

(t_q) and for the off-state voltage to reach full value (t_v), i.e.

1

f ^max=

tpulse +tq +tv

13.0 On-State Energy per Pulse Characteristics

These curves enable rapid estimation of device dissipation to be obtained for conditions not covered by

the frequency ratings.

Let E_pbe the Energy per pulse for a given current and pulse width, in joules

Let R_th(JK)be the steady-state d.c. thermal resistance (junction to sink)

and T_Kbe the heat sink temperature.

Then the average dissipation will be:

W_AV= E_P⋅ f and T_{K (max.)}=125 −

(

W_AV⋅ R_th

)

(

JK )

14.0 Reverse recovery ratings

(i) Q_rais based on 50% I_rmchord as shown in Fig. 1

Fig. 1

(ii) Q_rris based on a 150µs integration time i.e.

150µs

Q_rr= i_rr.dt

∫

0

Data Sheet. Types R0472YS12# to R0472YS16# AD Issue 1

Page 4 of 12

June, 2008

WESTCODE An IXYS Company

Distributed Gate Thyristor types R0472YS12# to R0472YS16#

(iii)

t₁

K Factor =

t₂

15.0 Reverse Recovery Loss

15.1 Determination by Measurement

From waveforms of recovery current obtained from a high frequency shunt (see Note 1, Page 5) and

reverse voltage present during recovery, an instantaneous reverse recovery loss waveform must be

constructed. Let the area under this waveform be E joules per pulse. A new heat sink temperature can

then be evaluated from the following:

T_{K (new)}= T_{K (original )}− E ⋅

(

k + f ⋅ R_th

)

(

JK )

Where k=0.227 (°C/W)/s

E = Area under reverse loss waveform per pulse in joules (W.s.)

f = rated frequency Hz at the original heat sink temperature.

R_th(JK)= d.c. thermal resistance (°C/W).

The total dissipation is now given by:

W_(TOT)= W_(original)+ E ⋅ f

15.2 Determination without Measurement

In circumstances where it is not possible to measure voltage and current conditions, or for design

purposes, the additional losses E in joules may be estimated as follows.

Let E be the value of energy per reverse cycle in joules (curves in Figure 9).

Let f be the operating frequency in Hz

T_K

= T_K

−

original

( )

(

E ⋅ R_th⋅ f

)

(

new

)

Where T_{K (new)}is the required maximum heat sink temperature and

T_{K (original)}is the heat sink temperature given with the frequency ratings.

A suitable R-C snubber network is connected across the thyristor to restrict the transient reverse voltage

to a peak value (V_rm) of 67% of the maximum grade. If a different grade is being used or V_rmis other than

67% of Grade, the reverse loss may be approximated by a pro rata adjustment of the maximum value

obtained from the curves.

NOTE 1- Reverse Recovery Loss by Measurement

This thyristor has a low reverse recovered charge and peak reverse recovery current. When measuring

the charge, care must be taken to ensure that:

(a) a.c. coupled devices such as current transformers are not affected by prior passage of high

amplitude forward current.

(b) A suitable, polarised, clipping circuit must be connected to the input of the measuring oscilloscope

to avoid overloading the internal amplifiers by the relatively high amplitude forward current signal

(c) Measurement of reverse recovery waveform should be carried out with an appropriate critically

damped snubber, connected across diode anode to cathode. The formula used for the calculation

of this snubber is shown below:

V_r

= Commutating source voltage

V_r

R²= 4⋅

Where: C_S= Snubber capacitance

C_S⋅ ^di

R

= Snubber resistance

dt

Data Sheet. Types R0472YS12# to R0472YS16# AD Issue 1

Page 5 of 12

June, 2008

WESTCODE An IXYS Company

Distributed Gate Thyristor types R0472YS12# to R0472YS16#

16.0 Computer Modelling Parameters

16.1 Calculating V_Tusing ABCD Coefficients

The on-state characteristic I_Tvs V_T, on page 7 is represented in two ways;

(i)

the well established V_T0and r_Ttangent used for rating purposes and

a set of constants A, B, C, D, forming the coefficients of the representative equation for V_Tin

terms of I_Tgiven below:

(ii)

V_T= A+ B⋅ln

(

I_T+ C ⋅ I_T+ D ⋅ I_T

)

The constants, derived by curve fitting software, are given in this report for hot and cold characteristics

where possible. The resulting values for V_Tagree with the true device characteristic over a current range,

which is limited to that plotted.

25°C Coefficients

125°C Coefficients

A

B

C

D

-0.04923298

0.9418825

A

B

C

D

5.22761

-1.056685

2.513442 e^-3

-0.1889025

-5.150569 e^{- 4}

0.1703342

16.2 D.C. Thermal Impedance Calculation

p=n

−t

τ _p









r = r ⋅ 1− e

∑

t

p





p=1





Where p = 1 to n, n is the number of terms in the series.

t = Duration of heating pulse in seconds.

r_t= Thermal resistance at time t.

r_p= Amplitude of p_thterm.

τ_p= Time Constant of r_thterm.

D.C. Double Side Cooled

Term

r_p

τ_p

1

2

3

4

0.0200056

0.3391689

9.923438×10^-3

0.1269073

0.01433715

0.03562131

4.284403×10^-3

2.562946×10^-3

D.C. Single Side Cooled

3

Term

r_p

τ_p

1

2

4

5

0.06157697

2.136132

8.431182×10^-3

1.212898

0.01031315

0.1512408

0.01613806

0.04244

5.181088×10^-3

2.889595×10^-3

Data Sheet. Types R0472YS12# to R0472YS16# AD Issue 1

Page 6 of 12

June, 2008

WESTCODE An IXYS Company

Distributed Gate Thyristor types R0472YS12# to R0472YS16#

Curves

Figure 1 - On-state characteristics of Limit device

Figure 2 - Transient thermal impedance

10000

1

R0472YS12# -16#

AD Issue 1

SSC 0.1K/W

0.1

DSC 0.05K/W

125°C

1000

25°C

0.01

0.001

100

0.0001

0

1

2

3

4

0.000001

0.0001

0.01

1

100

Instantaneous on-state voltage - V_T(V)

Time (s)

Figure 3 - Gate characteristics - Trigger limits

Figure 4 - Gate characteristics - Power curves

20

8

R0472YS12# -16#

AD Issue 1

T_j=25°C

18

T_j=25°C

7

Max V_Gdc

16

6

14

12

10

8

Max V_Gdc

5

4

3

2

1

0

I_GT, V_GT

P_GMax 30W dc

6

4

P_G2W dc

2

Min V_Gdc

I_GD, V_GD

0.1

Min V_G

0.5

0

2

4

6

8

10

0

0.2

0.3

0.4

0.6

Gate Trigger Current - I_GT(A)

Data Sheet. Types R0472YS12# to R0472YS16# AD Issue 1

Page 7 of 12

June, 2008

WESTCODE An IXYS Company

Distributed Gate Thyristor types R0472YS12# to R0472YS16#

Figure 5 - Total recovered charge, Q_rr

Figure 6 - Recovered charge, Q_ra(50% chord)

1000

R0472YS12# -16#

AD Issue 1

T_j= 125°C

AD Issue 1

T_j= 125°C

2000A

1000A

550A

200A

2000A

1000A

550A

200A

100

10

1

10

100

1000

1

10

100

1000

Commutation rate - di/dt (A/µs)

Figure 7 - Peak reverse recovery current, I_rm

Figure 8 - Maximum recovery time, t_rr(50% chord)

10

1000

R0472YS12# -16#

AD Issue 1

T_j= 125°C

2000A

1000A

550A

200A

100

2000A

1000A

550A

200A

1

10

1

10

100

1000

1

10

100

1000

Commutation rate - di/dt (A/µs)

Data Sheet. Types R0472YS12# to R0472YS16# AD Issue 1

Page 8 of 12

June, 2008

WESTCODE An IXYS Company

Distributed Gate Thyristor types R0472YS12# to R0472YS16#

Figure 9 – Reverse recovery energy per pulse

Figure 10 - Sine wave energy per pulse

1000

1.00E+02

R0472YS12# -16#

AD Issue 1

R0472YS12# -16#

AD Issue 1

T_j= 125°C

V_rm400V

T_j=125°C

≤

2000A

1000A

550A

1.00E+01

200A

100

10

1

3kA

1.00E+00

1.00E-01

1.00E-02

2kA

1kA

550A

200A

1.00E-05

1.00E-04

1.00E-03

1.00E-02

1

10

100

1000

Pulse width (s)

Commutation rate - di/dt (A/µs)

Figure 11 – Square wave energy per pulse

Figure 12 - Square wave energy per pulse

1.00E+03

R0472YS12# -16#

AD Issue 1

di/dt=500A/µs

T_j=125°C

AD Issue 1

di/dt=100A/µs

T_j=125°C

1.00E+02

3kA

2kA

1.00E+01

1.00E+00

3kA

2kA

1.00E+00

1kA

550A

200A

1.00E-01

550A

1.00E-01

1.00E-02

200A

1.00E-02

1.00E-05

1.00E-04

1.00E-03

1.00E-02

1.00E-05

1.00E-04

1.00E-03

1.00E-02

Pulse width (s)

Data Sheet. Types R0472YS12# to R0472YS16# AD Issue 1

Page 9 of 12

June, 2008

WESTCODE An IXYS Company

Distributed Gate Thyristor types R0472YS12# to R0472YS16#

Figure 13 - Sine wave frequency ratings

Figure 14 - Sine wave frequency ratings

1.00E+05

R0472YS12# -16#

AD Issue 1

R0472YS12# -16#

AD Issue 1

T_k=85°C

T_k=55°C

200A

100% Duty Cycle

1.00E+04

550A

1.00E+04

1.00E+03

1.00E+02

1.00E+01

100% Duty Cycle

1kA

1.00E+03

2kA

3kA

1.00E+02

1.00E+01

1.00E+00

1.00E-05

1.00E-04

1.00E-03

1.00E-02

1.00E-05

1.00E-04

1.00E-03

1.00E-02

Pulse Width (s)

Pulse width (s)

Figure 15 - Square wave frequency ratings

Figure 16 - Square wave frequency ratings

1.00E+05

R0472YS12# -16#

AD Issue 1

R0472YS12# -16#

AD Issue 1

di/dt=100A/µs

T_k=55°C

di/dt=500A/µs

T_k=55°C

200A

550A

200A

550A

100% Duty Cycle

1.00E+04

1.00E+03

1.00E+02

1.00E+01

1.00E+00

1.00E+04

1.00E+03

1.00E+02

1.00E+01

1.00E+00

1kA

100% Duty Cycle

1kA

2kA

3kA

2kA

3kA

1.00E-05

1.00E-04

1.00E-03

1.00E-02

1.00E-05

1.00E-04

1.00E-03

1.00E-02

Pulse width (s)

Data Sheet. Types R0472YS12# to R0472YS16# AD Issue 1

Page 10 of 12

June, 2008

WESTCODE An IXYS Company

Distributed Gate Thyristor types R0472YS12# to R0472YS16#

Figure 17 - Square wave frequency ratings

Figure 18 - Square wave frequency ratings

1.00E+05

R0472YS12# -16#

AD Issue 1

di/dt=500A/µs

T_k=85°C

di/dt=100A/µs

T_k=85°C

200A

550A

200A

100% Duty Cycle

1.00E+04

100% Duty Cycle

1.00E+04

1.00E+03

1.00E+02

1.00E+01

550A

1kA

1.00E+03

1kA

2kA

1.00E+02

2kA

3kA

1.00E+01

1.00E+00

1.00E-05

1.00E-04

1.00E-03

1.00E-02

1.00E-05

1.00E-04

1.00E-03

1.00E-02

Pulse width (s)

Figure 19 - Maximum surge and I²t Ratings

Gate may temporarily lose control of conduction angle

100000

10000

1000

1.00E+06

R0472YS12# -16#

AD Issue 1

I²t: V_RRM≤10V

I²t: 60% V_RRM

T_j(initial) = 125°C

1.00E+05

I_TSM: V_RRM≤10V

I_TSM: 60% V_RRM

1.00E+04

1

3

5

10

1

5

10

50 100

Duration of surge (ms)

Duration of surge (cycles @ 50Hz)

Data Sheet. Types R0472YS12# to R0472YS16# AD Issue 1

Page 11 of 12

June, 2008

WESTCODE An IXYS Company

Distributed Gate Thyristor types R0472YS12# to R0472YS16#

Outline Drawing & Ordering Information

101A335

ORDERING INFORMATION

(Please quote 10 digit code as below)

R0472

YS

♦ ♦

#

Fixed

Voltage Code

t_qCodes

E=25µs, F=30µs, H=40µs,

J=50µs

Type Code

Outline Code

V_DRM/100

12, 14, 16

Typical order code: R0472YS16J – 1600V V_RRM/V_DRM, 50µs t_q, 15.1mm clamp height capsule.

IXYS Semiconductor GmbH

Edisonstraße 15

Westcode Semiconductors Ltd

Langley Park Way, Langley Park,

Chippenham, Wiltshire, SN15 1GE.

Tel: +44 (0)1249 444524

D-68623 Lampertheim

Tel: +49 6206 503-0

WESTCODE

Fax: +49 6206 503-627

Fax: +44 (0)1249 659448

An IXYS Company

E-mail: marcom@ixys.de

E-mail: WSL.sales@westcode,com

IXYS Corporation

Westcode Semiconductors Inc

3270 Cherry Avenue

1590 Buckeye Drive

www.westcode.com

Milpitas CA95035-7418 USA

Tel: +1 (408) 457 9000

Fax: +1 (408) 496 0670

E-mail: sales@ixys.net

Long Beach CA 90807 USA

Tel: +1 (562) 595 6971

Fax: +1 (562) 595 8182

www.ixys.com

E-mail: WSI.sales@westcode.com

The information contained herein is confidential and is protected by Copyright. The information may not be used or disclosed

except with the written permission of and in the manner permitted by the proprietors Westcode Semiconductors Ltd.

In the interest of product improvement, Westcode reserves the right to change specifications at any time without prior notice.

Devices with a suffix code (2-letter, 3-letter or letter/digit/letter combination) added to their generic code are not necessarily

subject to the conditions and limits contained in this report.

Data Sheet. Types R0472YS12# to R0472YS16# AD Issue 1

Page 12 of 12

June, 2008


型号：	R0472YS16E
厂家：	LITTELFUSE
描述：	Silicon Controlled Rectifier, 945A I(T)RMS, 1600V V(DRM), 1600V V(RRM), 1 Element, 栅栅极
文件：	总12页 (文件大小：504K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

R0472YS16E [LITTELFUSE]

相关型号：

R0472YS16F

R0472YS16H

R0472YS16J

R0487YS10#

R0487YS10D

R0487YS10F

R0487YS12#

R0487YS12D

R0487YS12E

R0487YS12F

R0487YS14#

R0487YS14D