R3047TC24L
更新时间:2024-09-18 18:12:29
品牌:LITTELFUSE
描述:Silicon Controlled Rectifier, 6094A I(T)RMS, 5097000mA I(T), 2400V V(DRM), 2400V V(RRM), 1 Element, 101A325, 3 PIN
R3047TC24L 概述
Silicon Controlled Rectifier, 6094A I(T)RMS, 5097000mA I(T), 2400V V(DRM), 2400V V(RRM), 1 Element, 101A325, 3 PIN 可控硅整流器
R3047TC24L 规格参数
生命周期: | Active | 包装说明: | DISK BUTTON, O-CXDB-X3 |
Reach Compliance Code: | compliant | 风险等级: | 5.16 |
标称电路换相断开时间: | 65 µs | 配置: | SINGLE |
关态电压最小值的临界上升速率: | 200 V/us | 最大直流栅极触发电流: | 600 mA |
最大直流栅极触发电压: | 3 V | 最大维持电流: | 1000 mA |
JESD-30 代码: | O-CXDB-X3 | 最大漏电流: | 200 mA |
通态非重复峰值电流: | 50000 A | 元件数量: | 1 |
端子数量: | 3 | 最大通态电流: | 5097000 A |
最高工作温度: | 125 °C | 最低工作温度: | -40 °C |
封装主体材料: | CERAMIC, METAL-SEALED COFIRED | 封装形状: | ROUND |
封装形式: | DISK BUTTON | 认证状态: | Not Qualified |
最大均方根通态电流: | 6094 A | 断态重复峰值电压: | 2400 V |
重复峰值反向电压: | 2400 V | 子类别: | Silicon Controlled Rectifiers |
表面贴装: | YES | 端子形式: | UNSPECIFIED |
端子位置: | UNSPECIFIED | 触发设备类型: | SCR |
Base Number Matches: | 1 |
R3047TC24L 数据手册
通过下载R3047TC24L数据手册来全面了解它。这个PDF文档包含了所有必要的细节,如产品概述、功能特性、引脚定义、引脚排列图等信息。
PDF下载Date:- 25 May, 2001
Data Sheet Issue:- 2
WESTCODE
Provisional Data
Distributed Gate Thyristor
Types R3047TC24x to R3047TC28x
Absolute Maximum Ratings
MAXIMUM
LIMITS
VOLTAGE RATINGS
UNITS
(Note 1)
VDRM
VDSM
VRRM
VRSM
Repetitive peak off-state voltage
Non-repetitive peak off-state voltage
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
2400-2800
V
V
V
V
2400-2800
2400-2800
2500-2900
MAXIMUM
LIMITS
3047
OTHER RATINGS
UNITS
IT(AV)
IT(AV)
IT(AV)
IT(RMS)
IT(d.c.)
ITSM
ITSM2
I2t
Mean on-state current, Tsink=55°C (note 2)
Mean on-state current. Tsink=85°C (note 2)
Mean on-state current. Tsink=85°C (note 3)
Nominal RMS on-state current, Tsink=25°C (note 2)
D.C. on-state current, Tsink=25°C (note 4)
A
A
A
A
A
2043
1196
6094
5097
50
Peak non-repetitive surge tp=10ms, VRM=0.6VRRM (note 5)
kA
kA
A2s
A2s
A/µs
A/µs
V
W
W
V
≤
55
Peak non-repetitive surge tp=10ms, VRM 10V (note 5)
I2t capacity for fusing tp=10ms, VRM=0.6VRRM (note 5)
12.5×106
15.1×106
500
I2t
≤
I2t capacity for fusing tp=10ms, VRM 10V (note 5)
Maximum rate of rise of on-state current (repetitive) (Note 6)
Maximum rate of rise of on-state current (non-repetitive) (Note 6)
Peak reverse gate voltage
Mean forward gate power
Peak forward gate power
diT/dt
1000
5
4
50
0.25
VRGM
PG(AV)
PGM
VGD
Non-trigger gate voltage (Note 7)
THS
Tstg
Operating temperature range
Storage temperature range
-40 to +125
-40 to +150
°C
°C
Notes:-
1) De-rating factor of 0.13% per °C is applicable for Tj below 25°C.
2) Double side cooled, single phase; 50Hz, 180° half-sinewave.
3) Single side cooled, single phase; 50Hz, 180° half-sinewave.
4) Double side cooled.
5) Half-sinewave, 125°C Tj initial.
≤
6) VD=67% VDRM, IFG=2A, tr 0.5µs, Tcase=125°C.
7) Rated VDRM
.
Provisional Data Sheet. Types R3047TC24x-28x Issue 2
Page 1 of 12
May, 2001
WESTCODE Positive development in power electronics
R3047TC24x-28x
Characteristics
PARAMETER
MIN.
TYP. MAX. TEST CONDITIONS
UNITS
(Note 1)
VTM
V0
Maximum peak on-state voltage
Threshold voltage
-
-
2.45 ITM=5000A
1.581
V
V
-
-
rS
Slope resistance
-
-
0.171
Ω
m
dv/dt Critical rate of rise of off-state voltage
200
-
-
-
VD=80% VDRM, linear ramp
µ
V/ s
IDRM
IRRM
VGT
IGT
IH
Peak off-state current
Peak reverse current
Gate trigger voltage
-
-
-
-
-
-
-
-
-
-
-
200 Rated VDRM
200 Rated VRRM
mA
mA
V
-
-
3.0
Tj=25°C
600
VD=10V, IT=3A
Gate trigger current
-
mA
mA
Holding current
-
1000 Tj=25°C
tgd
Gate-controlled turn-on delay time
Turn-on time
0.7
1.5
1900
950
260
7.3
1.5
VD=67% VDRM, IT=2000A, di/dt=60A/µs,
µs
I
FG=2A, tr=0.5µs, Tj=25°C
tgt
3.0
Qrr
Qra
Irm
Recovered charge
-
µC
µC
A
Recovered charge, 50% Chord
Reverse recovery current
Reverse recovery time, 50% chord
1180
I
TM=4000A, tp=2000µs, di/dt=60A/µs,
Vr=100V
-
-
trr
µs
I
TM=4000A, tp=2000µs, di/dt=60A/µs,
-
-
80
Vr=100V, Vdr=67%VDRM, dVdr/dt=20V/µs
ITM=4000A, tp=2000µs, di/dt=60A/µs,
Vr=100V, Vdr=67%VDRM, dVdr/dt=200V/µs
tq
Turn-off time
µs
60
85
100
-
-
-
0.008 Double side cooled
K/W
K/W
kN
Rth(j-hs) Thermal resistance, junction to heatsink
-
-
0.016 Single side cooled
F
Mounting force
Weight
63
-
77
-
Wt
1.23
kg
Notes:-
1) Unless otherwise indicated Tj=125°C.
2) The required tq (specified with dVdr/dt=200V/µs) is represented by an ‘x’ in the device part number. See ordering information
for details of tq codes.
Provisional Data Sheet. Types R3047TC24x-28x Issue 2
Page 2 of 12
May, 2001
WESTCODE Positive development in power electronics
Notes on Ratings and Characteristics
1.0 Voltage Grade Table
R3047TC24x-28x
V
DRM VDSM VRRM
VRSM
V
VD VR
DC V
1450
1550
1650
Voltage Grade
V
2400
2600
2800
2400
2600
2800
2500
2700
2900
2.0 Extension of Voltage Grades
This report is applicable to other and higher voltage grades when supply has been agreed by
Sales/Production.
3.0 Extension of Turn-off Time
This Report is applicable to other tq/re-applied dv/dt combinations when supply has been agreed by
Sales/Production.
4.0 Repetitive dv/dt
Higher dv/dt selections are available up to 1000V/µs on request.
5.0 De-rating Factor
A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for Tj below 25°C.
6.0 Rate of rise of on-state current
The maximum un-primed rate of rise of on-state current must not exceed 1000A/µs at any time during
turn-on on a non-repetitive basis. For repetitive performance, the on-state rate of rise of current must not
exceed 500A/µs at any time during turn-on. Note that these values of rate of rise of current apply to the
total device current including that from any local snubber network.
7.0 Square wave ratings
These ratings are given for load component rate of rise of forward current of 100 and 500 A/µs.
8.0 Duty cycle lines
The 100% duty cycle is represented on all the ratings by a straight line. Other duties can be included as
parallel to the first.
9.0 Maximum Operating Frequency
The maximum operating frequency is set by the on-state duty, the time required for the thyristor to turn off
(tq) and for the off-state voltage to reach full value (tv), i.e.
1
max =
f
tpulse +tq +tv
Provisional Data Sheet. Types R3047TC24x-28x Issue 2
Page 3 of 12
May, 2001
WESTCODE Positive development in power electronics
R3047TC24x-28x
10.0 On-State Energy per Pulse Characteristics
These curves enable rapid estimation of device dissipation to be obtained for conditions not covered by
the frequency ratings.
Let Ep be the Energy per pulse for a given current and pulse width, in joules
Let Rth(J-Hs) be the steady-state d.c. thermal resistance (junction to sink)
and TSINK be the heat sink temperature.
Then the average dissipation will be:
= ⋅
=
−
⋅
WAV EP f and TSINK (max.) 125 WAV Rth
(
J −Hs
)
11.0 Reverse recovery ratings
(i) Qra is based on 50% Irm chord as shown in Fig. 1 below.
Fig. 1
µ
(ii) Qrr is based on a 150 s integration time.
150µs
Qrr = irr .dt
∫
i.e.
0
t1
t2
K Factor =
(iii)
12.0 Reverse Recovery Loss
12.1 Determination by Measurement
From waveforms of recovery current obtained from a high frequency shunt (see Note 1, Page 5) and
reverse voltage present during recovery, an instantaneous reverse recovery loss waveform must be
constructed. Let the area under this waveform be E joules per pulse. A new heat sink temperature can
then be evaluated from:
=
− ⋅
+ ⋅
TSINK (new) TSINK (original) E k f Rth
(
J −Hs
)
where k = 0.227 (°C/W)/s
E = Area under reverse loss waveform per pulse in joules (W.s.)
f = rated frequency Hz at the original heat sink temperature.
Rth(J-Hs) = d.c. thermal resistance (°C/W).
Provisional Data Sheet. Types R3047TC24x-28x Issue 2
Page 4 of 12
May, 2001
WESTCODE Positive development in power electronics
R3047TC24x-28x
The total dissipation is now given by:
=
+ ⋅
E f
W(TOT) W(original)
12.2 Determination without Measurement
In circumstances where it is not possible to measure voltage and current conditions, or for design
purposes, the additional losses E in joules may be estimated as follows.
Let E be the value of energy per reverse cycle in joules (curves in Figure 9).
Let f be the operating frequency in Hz
TSINK
=
TSINK
−
( )
original
(
E Rth f
⋅ ⋅
)
(
new
)
Where TSINK (new) is the required maximum heat sink temperature and
TSINK (original) is the heat sink temperature given with the frequency ratings.
A suitable R-C snubber network is connected across the thyristor to restrict the transient reverse voltage
to a peak value (Vrm) of 67% of the maximum grade. If a different grade is being used or Vrm is other than
67% of Grade, the reverse loss may be approximated by a pro rata adjustment of the maximum value
obtained from the curves.
NOTE 1
- Reverse Recovery Loss by Measurement
This thyristor has a low reverse recovered charge and peak reverse recovery current. When measuring
the charge care must be taken to ensure that:
(a) a.c. coupled devices such as current transformers are not affected by prior passage of high
amplitude forward current.
(b) A suitable, polarised, clipping circuit must be connected to the input of the measuring oscilloscope
to avoid overloading the internal amplifiers by the relatively high amplitude forward current signal
(c) Measurement of reverse recovery waveform should be carried out with an appropriate critically
damped snubber, connected across diode anode to cathode. The formula used for the calculation
of this snubber is shown below:
Vr
R2 = 4⋅
CS ⋅ di
dt
Where: Vr = Commutating source voltage
CS = Snubber capacitance
R
= Snubber resistance
13.0 Gate Drive
Ω
The recommended pulse gate drive is 30V, 15 with a short-circuit current rise time of not more than
0.5µs. This gate drive must be applied when using the full di/dt capability of the device.
The duration of pulse may need to be configured with respect to the application but should be no shorter
than 20µs, otherwise an increase in pulse current could be needed to supply the resulting increase in
charge to trigger.
Provisional Data Sheet. Types R3047TC24x-28x Issue 2
Page 5 of 12
May, 2001
WESTCODE Positive development in power electronics
R3047TC24x-28x
14.0 Computer Modelling Parameters
14.1 Calculating VT using ABCD Coefficients
The on-state characteristic IT vs VT, on page 7 is represented in two ways;
(i)
the well established V0 and rs tangent used for rating purposes and
(ii)
a set of constants A, B, C, D, forming the coefficients of the representative equation for VT in
terms of IT given below:
= + ⋅ ( )+ ⋅ + ⋅
VT A B ln IT C IT D IT
The constants, derived by curve fitting software, are given in this report for hot and cold characteristics
where possible. The resulting values for VT agree with the true device characteristic over a current range,
which is limited to that plotted.
25°C Coefficients
125°C Coefficients
A
B
C
D
1.262553
0.140687
A
B
C
D
2.08186705
-0.1296326
1.41627×10-4
-9.591208×10-3
1.055787×10-4
0.01335506
14.2 D.C. Thermal Impedance Calculation
−
τ p
t
=
p n
r = r ⋅ 1− e
∑
t
p
=
p 1
Where p = 1 to n, n is the number of terms in the series.
t = Duration of heating pulse in seconds.
rt = Thermal resistance at time t.
rp = Amplitude of pth term.
τp
= Time Constant of rth term.
D.C. Double Side Cooled
Term
rp
τp
1
2
3
5.228149×10-3
0.9862513
3.076205×10-3
0.2593041
1.977511×10-3
0.03447094
D.C. Single Side Cooled
2
Term
rp
τp
1
3
4
0.01186497
7.361938
3.872272×10-3
3.457033×10-3
0.2019036
1.694157×10-3
1.651253
0.02934724
Provisional Data Sheet. Types R3047TC24x-28x Issue 2
Page 6 of 12
May, 2001
WESTCODE Positive development in power electronics
R3047TC24x-28x
Curves
Figure 1 - On-state characteristics of Limit device
Figure 2 - Transient thermal impedance
10000
0.1
SSC 0.016K/W
DSC 0.008K/W
0.01
Tj = 125°C
Tj = 25°C
1000
0.001
0.0001
0.00001
R3047TC24x-28x
AD Issue 2
R3047TC24x-28x
AD Issue 2
100
1
1.5
2
2.5
3
3.5
0.0001
0.001
0.01
0.1
Time (s)
1
10
100
Instantaneous on-state voltage - VT (V)
Figure 3 - Gate characteristics - Trigger limits
Figure 4 - Gate characteristics - Power curves
20
8
R3047TC24x-28x
R3047TC24x-28x
AD Issue 2
AD Issue 2
Tj=25°C
Tj=25°C
7
18
16
Max VG dc
6
14
12
10
8
Max VG dc
5
4
IGT, VGT
3
2
PG Max 30W dc
6
4
Min VG dc
PG 4W dc
Min VG dc
1
2
IGD, VGD
0
0
0
2
4
6
8
10
0
0.25
0.5
0.75
1
1.25
1.5
Gate Trigger Current - IGT (A)
Gate Trigger Current - IGT (A)
Provisional Data Sheet. Types R3047TC24x-28x Issue 2
Page 7 of 12
May, 2001
WESTCODE Positive development in power electronics
R3047TC24x-28x
Figure 5 - Total recovered charge, Qrr
Figure 6 - Recovered charge, Qra (50% chord)
10000
1000
100
10000
4000A
2000A
4000A
2000A
1000A
1000A
500A
500A
1000
Tj = 125°C
R3047TC24x-28x
AD Issue 2
Tj = 125°C
R3047TC24x-28x
AD Issue 2
100
10
100
Commutation rate - di/dt (A/µs)
1000
10
100
Commutation rate - di/dt (A/µs)
1000
Figure 7 - Peak reverse recovery current, Irm
Figure 8 - Maximum recovery time, trr (50% chord)
10
10000
4000A
2000A
4000A
2000A
1000A
500A
1000A
1000
100
10
500A
Tj = 125°C
Tj = 125°C
R3047TC24x-28x
AD Issue 2
R3047TC24x-28x
AD Issue 2
1
10
100
1000
10
100
Commutation rate - di/dt (A/µs)
1000
Commutation rate - di/dt (A/µs)
Provisional Data Sheet. Types R3047TC24x-28x Issue 2
Page 8 of 12
May, 2001
WESTCODE Positive development in power electronics
R3047TC24x-28x
Figure 9 – Reverse Recovery Energy
Figure 10 - Sine wave energy per pulse
10000
1.00E+03
1.00E+02
1.00E+01
1.00E+00
1.00E-01
1.00E-02
R3047TC24x-28x
R3047TC24x-28x
AD Issue 2
Tj=125°C
AD Issue 2
Tj = 125°C
Vr=400V
Measured
without
4000A
2000A
snubber
1000A
500A
8000A
6000A
1000
4000A
2000A
1000A
500A
100
10
100
1000
1.00E-05
1.00E-04
1.00E-03
1.00E-02
di/dt (A/µs)
Pulse width (s)
Figure 11 - Sine wave frequency ratings
Figure 12 - Sine wave frequency ratings
1.00E+05
1.00E+05
R3047TC24x-28x
AD Issue 2
THs=85°C
R3047TC24x-28x
AD Issue 2
1000A
THs=55°C
1000A
2000A
100% Duty Cycle
100% Duty Cycle
2000A
1.00E+04
1.00E+03
1.00E+02
1.00E+01
1.00E+04
1.00E+03
1.00E+02
1.00E+01
4000A
4000A
6000A
8000A
6000A
8000A
1.00E-05
1.00E-04
1.00E-03
1.00E-02
1.00E-05
1.00E-04
1.00E-03
1.00E-02
Pulse width (s)
Pulse Width (s)
Provisional Data Sheet. Types R3047TC24x-28x Issue 2
Page 9 of 12
May, 2001
WESTCODE Positive development in power electronics
R3047TC24x-28x
Figure 13 - Square wave frequency ratings
Figure 14 - Square wave frequency ratings
1.00E+05
1.00E+05
1.00E+04
1.00E+03
1.00E+02
1.00E+01
R3047TC24x-28x
AD Issue 2
di/dt=500A/µs
100% Duty Cycle
THs=55°C
1000A
2000A
100% Duty Cycle
1.00E+04
2000A
4000A
4000A
6000A
6000A
8000A
1.00E+03
1.00E+02
1.00E+01
8000A
THs=55°C
di/dt=100A/µs
R3047TC24x-28x
AD Issue 2
1.00E-05
1.00E-04
1.00E-03
1.00E-02
1.00E-05
1.00E-04
1.00E-03
1.00E-02
Pulse width (s)
Pulse width (s)
Figure 15 - Square wave frequency ratings
Figure 16 - Square wave frequency ratings
1.00E+05
1.00E+05
500A
100% Duty Cycle
1000A
100% Duty Cycle
1000A
1.00E+04
2000A
1.00E+04
2000A
4000A
4000A
1.00E+03
6000A
1.00E+03
6000A
8000A
8000A
1.00E+02
1.00E+02
THs=85°C
THs=85°C
di/dt=500A/µs
di/dt=100A/µs
R3047TC24x-28x
R3047TC24x-28x
AD Issue 2
AD Issue 2
1.00E+01
1.00E+01
1.00E-05
1.00E-04
1.00E-03
1.00E-02
1.00E-05
1.00E-04
1.00E-03
1.00E-02
Pulse width (s)
Pulse width (s)
Provisional Data Sheet. Types R3047TC24x-28x Issue 2
Page 10 of 12
May, 2001
WESTCODE Positive development in power electronics
R3047TC24x-28x
Figure 17 - Square wave energy per pulse
Figure 18 - Square wave energy per pulse
1.00E+03
1.00E+03
1.00E+02
1.00E+01
1.00E+00
1.00E-01
1.00E-02
R3047TC24x-28x
R3047TC24x-28x
AD Issue 2
di/dt=500A/µs
Tj=125°C
AD Issue 2
di/dt=100A/µs
Tj=125°C
1.00E+02
8000A
6000A
4000A
1.00E+01
1.00E+00
1.00E-01
1.00E-02
8000A
6000A
4000A
2000A
1000A
500A
2000A
1000A
500A
1.00E-05
1.00E-04
1.00E-03
1.00E-02
1.00E-05
1.00E-04
1.00E-03
1.00E-02
Pulse width (s)
Pulse width (s)
Figure 19 - Maximum surge and I2t Ratings
Gate may temporarily lose control of conduction angle
1000000
100000
10000
1.00E+09
1.00E+08
1.00E+07
1.00E+06
R3047TC24x-28x
AD Issue 2
Tj (initial) = 125°C
I2t: VRRM 10V
≤
I2t: 60% VRRM
≤
ITSM: VRRM 10V
ITSM: 60% VRRM
1000
1
3
5
10
1
5
10
50 100
Duration of surge (ms)
Duration of surge (cycles @ 50Hz)
Provisional Data Sheet. Types R3047TC24x-28x Issue 2
Page 11 of 12
May, 2001
WESTCODE Positive development in power electronics
R3047TC24x-28x
Outline Drawing & Ordering Information
ORDERING INFORMATION
(Please quote 10 digit code as below)
R3047
TC
♦ ♦
♦
Fixed
Fixed
Off-state Voltage Code
tq Code
Type Code
Outline Code
VDRM/100
40-45
K=60µs, L=65µs,
M=70µs, N=100µs
Typical order code: R3047TC26 – 2600V VDRM, VRRM, 300µs tq, 27.1mm clamp height capsule.
UK: Westcode Semiconductors Ltd.
P.O. Box 57, Chippenham, Wiltshire, England. SN15 1JL.
Tel: +44 (0) 1249 444524 Fax: +44 (0) 1249 659448
E-Mail: WSL.sales@westcode.com
WESTCODE
USA: Westcode Semiconductors Inc.
3270 Cherry Avenue, Long Beach, California 90807
Tel: 562 595 6971 Fax: 562 595 8182
Internet: http://www.westcode.com
E-Mail: WSI.sales@westcode.com
The information contained herein is confidential and is protected by Copyright. The information may not be used or disclosed
except with the written permission of and in the manner permitted by the proprietors Westcode Semiconductors Ltd.
© Westcode Semiconductors Ltd.
In the interest of product improvement, Westcode reserves the right to change specifications at any time without prior notice.
Devices with a suffix code (2-letter or letter/digit/letter combination) added to their generic code are not necessarily subject to
the conditions and limits contained in this report.
Provisional Data Sheet. Types R3047TC24x-28x Issue 2
Page 12 of 12
May, 2001
R3047TC24L 相关器件
型号 | 制造商 | 描述 | 价格 | 文档 |
R3047TC24M | LITTELFUSE | Silicon Controlled Rectifier, 6094 A, 2400 V, SCR, 101A325, 3 PIN | 获取价格 | |
R3047TC24N | IXYS | Silicon Controlled Rectifier, 6094A I(T)RMS, 5097000mA I(T), 2400V V(DRM), 2400V V(RRM), 1 Element, 101A325, 3 PIN | 获取价格 | |
R3047TC24N | LITTELFUSE | Silicon Controlled Rectifier, 6094A I(T)RMS, 5097000mA I(T), 2400V V(DRM), 2400V V(RRM), 1 Element, 101A325, 3 PIN | 获取价格 | |
R3047TC26K | IXYS | Silicon Controlled Rectifier, 6094A I(T)RMS, 5097000mA I(T), 2600V V(DRM), 2600V V(RRM), 1 Element, 101A325, 3 PIN | 获取价格 | |
R3047TC26K | LITTELFUSE | Silicon Controlled Rectifier, 6094A I(T)RMS, 5097000mA I(T), 2600V V(DRM), 2600V V(RRM), 1 Element, 101A325, 3 PIN | 获取价格 | |
R3047TC26L | LITTELFUSE | Silicon Controlled Rectifier, 6094A I(T)RMS, 5097000mA I(T), 2600V V(DRM), 2600V V(RRM), 1 Element, 101A325, 3 PIN | 获取价格 | |
R3047TC26N | LITTELFUSE | Silicon Controlled Rectifier, 6094 A, 2600 V, SCR, 101A325, 3 PIN | 获取价格 | |
R3047TC28K | IXYS | Silicon Controlled Rectifier, 6094A I(T)RMS, 5097000mA I(T), 2800V V(DRM), 2800V V(RRM), 1 Element, 101A325, 3 PIN | 获取价格 | |
R3047TC28K | LITTELFUSE | Silicon Controlled Rectifier, 6094A I(T)RMS, 5097000mA I(T), 2800V V(DRM), 2800V V(RRM), 1 Element, 101A325, 3 PIN | 获取价格 | |
R3047TC28M | IXYS | Silicon Controlled Rectifier, 6094A I(T)RMS, 5097000mA I(T), 2800V V(DRM), 2800V V(RRM), 1 Element, 101A325, 3 PIN | 获取价格 |
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