R3636EC16S_技术文档

Date:- 30 Mar, 2007

Data Sheet Issue:- 1

WESTCODE

An IXYS Company

Distributed Gate Thyristor

Types R3636EC16# to R3636EC20#

Absolute Maximum Ratings

MAXIMUM

LIMITS

1600-2000

1700-2100

VOLTAGE RATINGS (Note 1)

UNITS

V_DRM

V_DSM

V_RRM

V_RSM

Repetitive peak off-state voltage

Non-repetitive peak off-state voltage

Repetitive peak reverse voltage

Non-repetitive peak reverse voltage

V

MAXIMUM

LIMITS

OTHER RATINGS

UNITS

I_T(AV)

I_T(RMS)

I_T(d.c.)

I_TSM

I_TSM2

I²t

Maximum average on-state current, T_sink=55°C (note 2)

Maximum average on-state current. T_sink=85°C (note 2)

Maximum average on-state current. T_sink=85°C (note 3)

Nominal RMS on-state current, T_sink=25°C (note 2)

D.C. on-state current, T_sink=25°C (note 4)

Peak non-repetitive surge t_p=10ms, V_RM=0.6V_RRM(note 5)

Peak non-repetitive surge t_p=10ms, V_RM≤10V (note 5)

I²t capacity for fusing t_p=10ms, V_RM=0.6V_RRM(note 5)

I²t capacity for fusing t_p=10ms, V_RM≤10V (note 5)

Maximum rate of rise of on-state current (repetitive) (Note 6)

Maximum rate of rise of on-state current (non-repetitive) (Note 6)

Peak reverse gate voltage

3636

A

2501

1518

A

7168

A

6233

A

38.9

kA

A²s

A/µs

V

42.7

7.57×10⁶

9.12×10⁶

500

I²t

di_T/dt

1000

V_RGM

P_G(AV)

P_GM

V_GD

5

Mean forward gate power

4

W

Peak forward gate power

50

W

Non-trigger gate voltage (Note 7)

0.25

V

T_{j op}

Operating temperature range

-40 to +125

-40 to +150

°C

T_stg

Storage temperature range

Notes:-

1) De-rating factor of 0.13% per °C is applicable for T_jbelow 25°C.

2) Double side cooled, single phase; 50Hz, 180° half-sinewave.

3) Single side cooled, single phase; 50Hz, 180° half-sinewave.

4) Double side cooled.

5) Half-sinewave, 125°C T_jinitial.

6) V_D=67% V_DRM, I_FG=2A, t_r≤0.5µs, T_case=125°C.

7) Rated V_DRM

.

Data Sheet. Types R3636EC16# to R3636EC20# Issue 1

Page 1 of 12

March, 2007

WESTCODE An IXYS Company

Distributed Gate Thyristor Types R3636EC16# to R3636EC20#

Characteristics

PARAMETER

MIN.

TYP. MAX. TEST CONDITIONS (Note 1)

UNITS

V_TM

V₀

Maximum peak on-state voltage

Threshold voltage

-

1.95 I_TM=5000A

2.86 I_TM=10700A

1.173

V

-

V

r_S

Slope resistance

-

0.155

mΩ

V/µs

mA

V

dv/dt Critical rate of rise of off-state voltage

200

-

V_D=80% V_DRM, gate o/c, linear ramp

I_DRM

I_RRM

V_GT

I_GT

V_GD

I_H

Peak off-state current

Peak reverse current

-

60

-

300 Rated V_DRM

300 Rated V_RRM

Gate trigger voltage

-

3.0

T_j=25°C

600

V_D=10V, I_T=3A

Gate trigger current

-

mA

Gate non-trigger voltage

Holding current

-

0.25 Rated V_DRM

1000 T_j=25°C

-

mA

µs

t_gd

Gate-controlled turn-on delay time

Turn-on time

0.8

1.0

1750

750

220

7.5

1.5

V_D=67% V_DRM, I_T=2000A, di/dt=60A/µs,

I

_FG=2A, t_r=0.5µs, T_j=25°C

t_gt

2.0

Q_rr

Q_ra

I_rm

Recovered charge

-

µC

A

Recovered charge, 50% chord

Reverse recovery current

Reverse recovery time, 50% chord

1500

I

_TM=4000A, t_p=2000µs, di/dt=60A/µs,

V_r=100V

-

t_rr

µs

I

_TM=4000A, t_p=2000µs, di/dt=60A/µs,

-

140

200

V_r=100V, V_dr=67%V_DRM, dV_dr/dt=20V/µs

I_TM=4000A, t_p=2000µs, di/dt=60A/µs,

V_r=100V, V_dr=67%V_DRM, dV_dr/dt=200V/µs

t_q

Turn-off time

µs

60

-

0.0075 Double side cooled

K/W

kN

R_thJKThermal resistance, junction to heatsink

-

0.0150 Single side cooled

F

Mounting force

Weight

63

-

77

-

W_t

1.23

kg

Notes:-

1) Unless otherwise indicated T_j=125°C.

2) The required t_q(specified with dV_dr/dt=200V/µs) is represented by a ‘#’ in the device part number. See ordering information for

details of t_qcodes.

Data Sheet. Types R3636EC16# to R3636EC20# Issue 1

Page 2 of 12

March, 2007

WESTCODE An IXYS Company

Notes on Ratings and Characteristics

1.0 Voltage Grade Table

Distributed Gate Thyristor Types R3636EC16# to R3636EC20#

V

_DRMV_DSMV_RRM

V_RSM

V

V_DV_R

DC V

1040

1150

1250

Voltage Grade

V

16

18

20

1600

1800

2000

1700

1900

2100

2.0 Extension of Voltage Grades

This report is applicable to other and higher voltage grades when supply has been agreed by

Sales/Production.

3.0 Extension of Turn-off Time

This Report is applicable to other t_q/re-applied dv/dt combinations when supply has been agreed by

Sales/Production.

4.0 Repetitive dv/dt

Higher dv/dt selections are available up to 1000V/µs on request.

5.0 De-rating Factor

A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for T_jbelow 25°C.

6.0 Rate of rise of on-state current

The maximum un-primed rate of rise of on-state current must not exceed 1000A/µs at any time during

turn-on on a non-repetitive basis. For repetitive performance, the on-state rate of rise of current must not

exceed 500A/µs at any time during turn-on. Note that these values of rate of rise of current apply to the

total device current including that from any local snubber network.

7.0 Square wave ratings

These ratings are given for load component rate of rise of forward current of 100 and 500 A/µs.

8.0 Duty cycle lines

The 100% duty cycle is represented on all the ratings by a straight line. Other duties can be included as

parallel to the first.

9.0 Maximum Operating Frequency

The maximum operating frequency is set by the on-state duty, the time required for the thyristor to turn off

(t_q) and for the off-state voltage to reach full value (t_v), i.e.

1

f ^max=

tpulse +tq +tv

Data Sheet. Types R3636EC16# to R3636EC20# Issue 1

Page 3 of 12

March, 2007

WESTCODE An IXYS Company

Distributed Gate Thyristor Types R3636EC16# to R3636EC20#

10.0 On-State Energy per Pulse Characteristics

These curves enable rapid estimation of device dissipation to be obtained for conditions not covered by

the frequency ratings.

Let E_pbe the Energy per pulse for a given current and pulse width, in joules

Let R_thJKbe the steady-state d.c. thermal resistance (junction to sink)

and T_Kbe the heat sink temperature.

Then the average dissipation will be:

W_AV= E_P⋅ f and T_{K (max.)}=125 −

(

W_AV⋅ R_thJK

)

11.0 Reverse recovery ratings

(i) Q_rais based on 50% I_rmchord as shown in Fig. 1 below.

Fig. 1

(ii) Q_rris based on a 150µs integration time.

150µs

Q_rr= i_rr.dt

∫

i.e.

0

t₁

t₂

K Factor =

(iii)

12.0 Reverse Recovery Loss

12.1 Determination by Measurement

From waveforms of recovery current obtained from a high frequency shunt (see Note 1, Page 5) and

reverse voltage present during recovery, an instantaneous reverse recovery loss waveform must be

constructed. Let the area under this waveform be E joules per pulse. A new heat sink temperature can

then be evaluated from:

T_{K (new)}= T_{K (original )}− E ⋅

(k + f ⋅ R_thJK

)

where k = 0.227 (°C/W)/s

E = Area under reverse loss waveform per pulse in joules (W.s.)

f = rated frequency Hz at the original heat sink temperature.

R_thJK= d.c. thermal resistance (°C/W).

The total dissipation is now given by:

W_(TOT)= W_(original)+ E ⋅ f

Data Sheet. Types R3636EC16# to R3636EC20# Issue 1

Page 4 of 12

March, 2007

WESTCODE An IXYS Company

Distributed Gate Thyristor Types R3636EC16# to R3636EC20#

12.2 Determination without Measurement

In circumstances where it is not possible to measure voltage and current conditions, or for design

purposes, the additional losses E in joules may be estimated as follows.

Let E be the value of energy per reverse cycle in joules (curves in Figure 9).

Let f be the operating frequency in Hz

T_K

= T_K

−

original

( )

(

E ⋅ R_th⋅ f

)

(

new

)

Where T_{K (new)}is the required maximum heat sink temperature and

T_{K (original)}is the heat sink temperature given with the frequency ratings.

A suitable R-C snubber network is connected across the thyristor to restrict the transient reverse voltage

to a peak value (V_rm) of 67% of the maximum grade. If a different grade is being used or V_rmis other than

67% of Grade, the reverse loss may be approximated by a pro rata adjustment of the maximum value

obtained from the curves.

NOTE 1- Reverse Recovery Loss by Measurement

This thyristor has a low reverse recovered charge and peak reverse recovery current. When measuring

the charge care must be taken to ensure that:

(a) a.c. coupled devices such as current transformers are not affected by prior passage of high

amplitude forward current.

(b) A suitable, polarised, clipping circuit must be connected to the input of the measuring oscilloscope

to avoid overloading the internal amplifiers by the relatively high amplitude forward current signal

(c) Measurement of reverse recovery waveform should be carried out with an appropriate critically

damped snubber, connected across diode anode to cathode. The formula used for the calculation

of this snubber is shown below:

V_r

R²= 4⋅

C_S⋅ ^di

dt

Where: V_r= Commutating source voltage

C_S= Snubber capacitance

R

= Snubber resistance

13.0 Gate Drive

The nominal requirement for a typical gate drive is illustrated below. An open circuit voltage of at least 30V

is assumed. This gate drive must be applied when using the full di/dt capability of the device.

I_GM

4A/µs

I_G

t_p1

The magnitude of I_GMshould be between five and ten times I_GT, which is shown on page 2. Its duration

(t_p1) should be 20µs or sufficient to allow the anode current to reach ten times I_L, whichever is greater.

Otherwise, an increase in pulse current could be needed to supply the necessary charge to trigger. The

‘back-porch’ current I_Gshould remain flowing for the same duration as the anode current and have a

magnitude in the order of 1.5 times I_GT.

Data Sheet. Types R3636EC16# to R3636EC20# Issue 1

Page 5 of 12

March, 2007

WESTCODE An IXYS Company

Distributed Gate Thyristor Types R3636EC16# to R3636EC20#

14.0 Computer Modelling Parameters

14.1 Calculating V_Tusing ABCD Coefficients

The on-state characteristic I_Tvs V_T, on page 7 is represented in two ways;

(i)

the well established V₀and r_stangent used for rating purposes and

a set of constants A, B, C, D, forming the coefficients of the representative equation for V_Tin

terms of I_Tgiven below:

(ii)

V_T= A+ B⋅ln

(

I_T+ C ⋅ I_T+ D ⋅ I_T

)

The constants, derived by curve fitting software, are given in this report for hot and cold characteristics

where possible. The resulting values for V_Tagree with the true device characteristic over a current range,

which is limited to that plotted.

25°C Coefficients

125°C Coefficients

A

B

C

D

1.699211

0.04818511

2.075468×10^-4

-0.01660626

A

B

C

D

3.102332103

-0.4078209

4.569058×10^-6

0.03250304

14.2 D.C. Thermal Impedance Calculation

−t

τ _p

p=n









r = r ⋅ 1− e

∑

t

p





p=1





Where p = 1 to n, n is the number of terms in the series.

t = Duration of heating pulse in seconds.

r_t= Thermal resistance at time t.

r_p= Amplitude of p_thterm.

τ_p= Time Constant of r_thterm.

D.C. Double Side Cooled

Term

r_p

1

2

3

3.589585×10^-3

2.412881×10^-3

1.447505×10^-3

0.8082131

0.1832005

0.01869883

τ_p

D.C. Single Side Cooled

2

Term

r_p

1

3

4

8.727296×10^-3

2.224163×10^-3

2.795381×10^-3

1.378979×10^-3

6.087499

1.57797

0.1730504

0.01784783

τ_p

Data Sheet. Types R3636EC16# to R3636EC20# Issue 1

Page 6 of 12

March, 2007

WESTCODE An IXYS Company

Distributed Gate Thyristor Types R3636EC16# to R3636EC20#

Curves

Figure 1 – On-state characteristics of Limit device

Figure 2 – Transient thermal impedance

10000

0.1

R3636EC16#-20#

Issue 1

SSC

0.015K/W

0.01

DSC

0.0075K/W

T_j= 125°C

T_j= 25°C

1000

0.001

0.0001

100

0.00001

0

0.5

1

1.5

2

2.5

0.0001

0.001

0.01

0.1

1

10

100

Instantaneous on-state voltage - V_T(V)

Time (s)

Figure 3 – Gate characteristics – Trigger limits

Figure 4 – Gate characteristics – Power curves

20

8

R3636EC16#-20#

Issue 1

T_j=25°C

18

7

6

16

Max V_Gdc

14

12

Max V_Gdc

5

10

4

P_GMax 50W dc

I_GT, V_GT

8

6

4

3

2

Min V_Gdc

P_G4W dc

Min V_Gdc

1

2

0

I_GD, V_GD

0

0.5

1

1.5

0

2

4

6

8

10

Gate Trigger Current - I_GT(A)

Data Sheet. Types R3636EC16# to R3636EC20# Issue 1

Page 7 of 12

March, 2007

WESTCODE An IXYS Company

Distributed Gate Thyristor Types R3636EC16# to R3636EC20#

Figure 5 – Total recovered charge, Q_rr

Figure 6 – Recovered charge, Q_ra(50% chord)

10000

R3636EC16#-20#

Issue 1

T_j= 125°C

5000A

3000A

2000A

5000A

3000A

2000A

1000A

1000

100

10

100

Commutation rate - di/dt (A/µs)

1000

10

100

1000

Commutation rate - di/dt (A/µs)

Figure 7 – Peak reverse recovery current, I_rm

Figure 8 – Maximum recovery time, t_rr(50% chord)

10000

100

R3636EC16#-20#

Issue 1

T_j= 125°C

5000A

3000A

1000

2000A

1000A

10

5000A

3000A

2000A

1000A

100

10

1

10

100

1000

10

100

1000

Commutation rate - di/dt (A/µs)

Data Sheet. Types R3636EC16# to R3636EC20# Issue 1

Page 8 of 12

March, 2007

WESTCODE An IXYS Company

Distributed Gate Thyristor Types R3636EC16# to R3636EC20#

Figure 9 – Reverse Recovery Energy

Figure 10 – Sine wave energy per pulse

10

1.00E+02

R3636EC16#-20#

Issue 1

T_j= 125°C

V_r= 400V

T_j=125°C

Measured

without

snubber

1.00E+01

6kA

4000A

3000A

2000A

1000A

4kA

1

1.00E+00

2kA

1kA

1.00E-01

500A

0.1

1.00E-02

10

100

1000

1.00E-05

1.00E-04

1.00E-03

1.00E-02

Commutation rate - di/dt (A/µs)

Pulse width (s)

Figure 11 – Sine wave frequency ratings

Figure 12 – Sine wave frequency ratings

1.00E+05

R3636EC16#-20#

Issue 1

R3636EC16#-20#

Issue 1

T_K=85°C

T_K=55°C

1kA

100% Duty Cycle

1.00E+04

1.00E+03

1.00E+02

1.00E+01

2kA

1.00E+04

1.00E+03

1.00E+02

4kA

6kA

4kA

6kA

1.00E-05

1.00E-04

1.00E-03

1.00E-02

1.00E-05

1.00E-04

1.00E-03

1.00E-02

Pulse Width (s)

Pulse width (s)

Data Sheet. Types R3636EC16# to R3636EC20# Issue 1

Page 9 of 12

March, 2007

WESTCODE An IXYS Company

Distributed Gate Thyristor Types R3636EC16# to R3636EC20#

Figure 13 – Square wave frequency ratings

Figure 14 – Square wave frequency ratings

1.00E+05

R3636EC16#-20#

Issue 1

di/dt=100A/µs

di/dt=500A/µs

T_K=55°C

1kA

2kA

1.00E+04

1.00E+03

1.00E+02

1.00E+01

100% Duty Cycle

2kA

4kA

100% Duty Cycle

4kA

6kA

1.00E+03

1.00E+02

1.00E+01

1.00E-05

1.00E-04

1.00E-03

1.00E-02

1.00E-05

1.00E-04

1.00E-03

1.00E-02

Pulse width (s)

Figure 15 – Square wave frequency ratings

Figure 16 – Square wave frequency ratings

1.00E+05

R3636EC16#-20#

Issue 1

R3636EC16#-20#

Issue 1

di/dt=100A/µs

T_K=85°C

di/dt=500A/µs

T_K=85°C

1kA

500A

1kA

1.00E+04

1.00E+03

1.00E+02

1.00E+01

1.00E+04

1.00E+03

1.00E+02

1.00E+01

2kA

100% Duty Cycle

2kA

4kA

6kA

1.00E-05

1.00E-04

1.00E-03

1.00E-02

1.00E-05

1.00E-04

1.00E-03

1.00E-02

Pulse width (s)

Data Sheet. Types R3636EC16# to R3636EC20# Issue 1

Page 10 of 12

March, 2007

WESTCODE An IXYS Company

Distributed Gate Thyristor Types R3636EC16# to R3636EC20#

Figure 17 – Square wave energy per pulse

Figure 18 – Square wave energy per pulse

1.00E+03

R3636EC16#-20#

Issue 1

di/dt=100A/µs

T_j=125°C

Issue 1

di/dt=500A/µs

T_j=125°C

1.00E+02

1.00E+01

6kA

4kA

1.00E+00

2kA

1kA

2kA

1kA

1.00E-01

1.00E-02

1.00E-01

500A

1.00E-02

1.00E-05

1.00E-04

1.00E-03

1.00E-02

1.00E-05

1.00E-04

1.00E-03

1.00E-02

Pulse width (s)

Figure 19 – Maximum surge and I²t Ratings

Gate may temporarily lose control of conduction angle

1000000

100000

10000

1.00E+08

I²t: V_RRM≤10V

R3636EC16#-20#

Issue 1

T_j(initial) = 125°C

I²t: 60% V_RRM

1.00E+07

1.00E+06

I_TSM: V_RRM≤10V

I_TSM: 60% V_RRM

1

3

5

10

1

5

10

50 100

Duration of surge (ms)

Duration of surge (cycles @ 50Hz)

Data Sheet. Types R3636EC16# to R3636EC20# Issue 1

Page 11 of 12

March, 2007

WESTCODE An IXYS Company

Distributed Gate Thyristor Types R3636EC16# to R3636EC20#

Outline Drawing & Ordering Information

101A352

ORDERING INFORMATION

(Please quote 10 digit code as below)

ꢀꢀ

R3636

EC

#

Voltage code

V_DRM/100

16-20

t_qCode

Fixed

K=60µs, L=65µs, M=70µs, N=100µs,

P=120µs, R=140µs, S=160µs, T=200µs

Type Code

Outline Code

Typical order code: R3636EC18N – 1800V V_DSM, V_RSM, 100µs t_q, 26.5mm clamp height capsule.

IXYS Semiconductor GmbH

Edisonstraße 15

Westcode Semiconductors Ltd

Langley Park Way, Langley Park,

Chippenham, Wiltshire, SN15 1GE.

Tel: +44 (0)1249 444524

D-68623 Lampertheim

Tel: +49 6206 503-0

WESTCODE

Fax: +49 6206 503-627

Fax: +44 (0)1249 659448

An IXYS Company

E-mail: marcom@ixys.de

E-mail: WSL.sales@westcode.com

IXYS Corporation

Westcode Semiconductors Inc

3270 Cherry Avenue

3540 Bassett Street

www.westcode.com

Santa Clara CA 95054 USA

Tel: +1 (408) 982 0700

Fax: +1 (408) 496 0670

E-mail: sales@ixys.net

Long Beach CA 90807 USA

Tel: +1 (562) 595 6971

Fax: +1 (562) 595 8182

www.ixys.com

E-mail: WSI.sales@westcode.com

The information contained herein is confidential and is protected by Copyright. The information may not be used or disclosed except

with the written permission of and in the manner permitted by the proprietors Westcode Semiconductors Ltd.

In the interest of product improvement, Westcode reserves the right to change specifications at any time without prior notice.

Devices with a suffix code (2-letter, 3-letter or letter/digit/letter combination) added to their generic code are not necessarily subject to

the conditions and limits contained in this report.

Data Sheet. Types R3636EC16# to R3636EC20# Issue 1

Page 12 of 12

March, 2007


型号：	R3636EC16S
厂家：	LITTELFUSE
描述：	Silicon Controlled Rectifier, 7168 A, 1600 V, SCR, 101A352, 3 PIN
文件：	总12页 (文件大小：463K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

R3636EC16S [LITTELFUSE]

相关型号：

R3636EC16T

R3636EC18L

R3636EC18M

R3636EC18N

R3636EC18R

R3636EC18S

R3636EC18T

R3636EC20K

R3636EC20L

R3636EC20M

R3636EC20N

R3636EC20R