SPHV36-01KTG [LITTELFUSE]
Trans Voltage Suppressor Diode, 200W, 36V V(RWM), Unidirectional, 1 Element, Silicon, MO-236,;
| 型号： | SPHV36-01KTG |
| 厂家： | 
LITTELFUSE |
| 描述： | Trans Voltage Suppressor Diode, 200W, 36V V(RWM), Unidirectional, 1 Element, Silicon, MO-236, 局域网 光电二极管 |
| 文件： | 总6页 (文件大小：982K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TVS Diode Arrays (SPA® Diodes)
General Purpose ESD Protection - SPHV Series
RoHS
GREEN
Pb
SPHV Series 200W Discrete Unidirectional TVS Diode
Description
The unidirectional SPHV series is designed for use in
portable applications, LED lighting modules, automotive
applications, and low speed I/Os. It will protect sensitive
equipment from damage due to electrostatic discharge
(ESD) and other overvoltage transients.
The SPHV series can safely absorb repetitive ESD
strikes above the maximum level of the IEC 61000-4-2
international standard (Level 4, ±±kV contact discharge)
without performance degradation and safely dissipate up to
±A (SPHV12) of induced surge current (IEC 61000-4-5, 2nd
Edition tP=±/20μs) with very low clamping voltages.
Features
Pinout
• ESD, IEC 61000-4-2,
±ꢀ0kV contact, ±ꢀ0kV air
• EFT, IEC 61000-4-4, 40A
(5/50ns)
• Small SOD±±2 packaging
helps save board space
• Side exposed leadframe
helps to verify
solderability (SPHVxx-KTG
series)
1
2
• Lightning, IEC 61000-
4-5, 2nd Edition ±A
(tP=±/20μs, SPHV12)
• AEC-Q101 qualified
• Lead-free, Halogen-free,
and RoHS Compliant
• Low clamping voltage
• Low leakage current
Applications
Functional Block Diagram
1
2
• LED Lighting Modules
• Portable Instrumentation
• General Purpose I/O
• Mobile & Handhelds
• RS2ꢀ2 / RS4±5
• CAN and LIN Bus
Life Support Note:
Additional Information
Not Intended for Use in Life Support or Life Saving Applications
The products shown herein are not designed for use in life sustaining or life saving
applications unless otherwise expressly indicated.
Daꢀasꢁeeꢀ
ꢀesoꢁrꢂes
Saꢀꢁꢂes
© 2016 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 12/28/16
TVS Diode Arrays (SPA® Diodes)
General Purpose ESD Protection - SPHV Series
Absolute Maximum Ratings
Symbol
Parameter
Value
200
Units
W
Ppk
Peak Pulse Power (tp=±/20μs)
OperatingTemperature
TOP
-40 to 125
-55 to 150
°C
TSTOR
StorageTemperature
°C
Notes:
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of
the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Thermal Information
Parameter
Rating
-55 to 150
150
Units
°C
StorageTemperature Range
Maximum JunctionTemperature
Maximum LeadTemperature (Soldering 20-40s)
°C
260
°C
SPHV12 Electrical Characteristics (TOP=25ºC)
Parameter
Symbol
VRWM
Test Conditions
IR≤1μA
Min
Typ
Max
12.0
Units
V
Reverse Standoff Voltage
Reverse Breakdown Voltage
Leakage Current
VBR
IR=1mA
VR=12V
1ꢀ.ꢀ
V
μA
V
ILEAK
1.0
IPP=1A, tp=±/20µs, Fwd
IPP=±A, tP=±/20μs, Fwd
19.0
25.0
Clamp Voltage1
VC
V
Dynamic Resistance2
Peak Pulse Current
RDYN
Ipp
TLP, tp=100ns, I/O to GND
tp=±/20µs
0.ꢀ7
Ω
A
±.0
60
IEC61000-4-2 (Contact Discharge)
IEC61000-4-2 (Air Discharge)
Reverse Bias=0V, f=1MHz
±ꢀ0
±ꢀ0
kV
kV
pF
ESD Withstand Voltage1
Diode Capacitance1
VESD
CD-GND
Note:
1
Parameter is guaranteed by design and/or device characterization.
Transmission Line Pulse (TLP) with 100ns width and 200ps rise time.
2
SPHV15 Electrical Characteristics (TOP=25ºC)
Parameter
Symbol
VRWM
VBR
Test Conditions
IR≤1μA
Min
Typ
Max
Units
V
Reverse Standoff Voltage
Reverse Breakdown Voltage
Leakage Current
15.0
IR=1mA
16.7
V
ILEAK
VR=15V
1.0
μA
V
IPP=1A, tp=±/20µs, Fwd
22.0
2±.0
Clamp Voltage1
VC
IPP=5A, tp=±/20µs, Fwd
TLP, tp=100ns, I/O to GND
tp=±/20µs
V
Ω
Dynamic Resistance2
Peak Pulse Current
RDYN
Ipp
0.40
5.0
46
A
IEC61000-4-2 (Contact Discharge)
±ꢀ0
±ꢀ0
kV
ESD Withstand Voltage1
Diode Capacitance1
VESD
IEC61000-4-2 (Air Discharge)
Reverse Bias=0V, f=1MHz
kV
pF
CI/O-GND
Note:
1
Parameter is guaranteed by design and/or device characterization.
Transmission Line Pulse (TLP) with 100ns width and 200ps rise time.
2
© 2016 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 12/28/16
TVS Diode Arrays (SPA® Diodes)
General Purpose ESD Protection - SPHV Series
SPHV24 Electrical Characteristics (TOP=25ºC)
Parameter
Symbol
VRWM
VBR
Test Conditions
IR≤1μA
Min
Typ
Max
24.0
Units
V
Reverse Standoff Voltage
Reverse Breakdown Voltage
Leakage Current
IR=1mA
26.7
V
ILEAK
VR=24V
1.0
μA
V
IPP=1A, tp=±/20µs, Fwd
ꢀ6.0
50.0
Clamp Voltage1
VC
IPP=ꢀA, tp=±/20µs, Fwd
TLP, tp=100ns, I/O to GND
tp=±/20µs
V
Ω
Dynamic Resistance2
Peak Pulse Current
RDYN
Ipp
0.56
ꢀ.0
ꢀ2
A
IEC61000-4-2 (Contact Discharge)
±24
±ꢀ0
kV
ESD Withstand Voltage1
Diode Capacitance1
VESD
IEC61000-4-2 (Air Discharge)
Reverse Bias=0V, f=1MHz
kV
pF
CI/O-GND
Note:
1
Parameter is guaranteed by design and/or device characterization.
Transmission Line Pulse (TLP) with 100ns width and 200ps rise time.
2
SPHV36 Electrical Characteristics (TOP=25ºC)
Parameter
Symbol
VRWM
VBR
Test Conditions
IR≤1μA
Min
Typ
Max
ꢀ6.0
Units
V
Reverse Standoff Voltage
Reverse Breakdown Voltage
Leakage Current
IR=1mA
40.0
V
ILEAK
VR=ꢀ6V
1.0
μA
V
IPP=1A, tp=±/20µs, Fwd
52.0
60.0
Clamp Voltage1
VC
IPP=2A, tp=±/20µs, Fwd
TLP, tp=100ns, I/O to GND
tp=±/20µs
V
Ω
Dynamic Resistance2
Peak Pulse Current
RDYN
Ipp
1.2±
2.0
25
A
IEC61000-4-2 (Contact Discharge)
±15
±20
kV
ESD Withstand Voltage1
Diode Capacitance1
VESD
IEC61000-4-2 (Air Discharge)
Reverse Bias=0V, f=1MHz
kV
pF
CI/O-GND
Note:
1
Parameter is guaranteed by design and/or device characterization.
Transmission Line Pulse (TLP) with 100ns width and 200ps rise time.
2
Non-Repetitive Peak Pulse Power vs. PulseTime
Power Derating Curve
110
100
90
80
70
60
50
40
30
20
10
0
10
1
0.1
0.01
0
25
50
75
100
125
150
0.1
1
10
Pulse Duration - t (µs)
100
1000
o
(
p
Ambient Temperature - T
C)
A
© 2016 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 12/28/16
TVS Diode Arrays (SPA® Diodes)
General Purpose ESD Protection - SPHV Series
8/20µs PulseWaveform
SPHV12Transmission Line Pulsing(TLP) Plot
110%
100%
90%
80%
70%
60%
50%
40%
30%
20%
10%
0%
20
18
16
14
12
10
8
6
4
2
0
0.0
5.0
10.0
15.0
20.0
25.0
30.0
0
5
10
15
20
25
Time (μs)
TLP Voltage (V)
SPHV15Transmission Line Pulsing(TLP) Plot
SPHV24Transmission Line Pulsing(TLP) Plot
20
18
16
14
12
10
8
20
18
16
14
12
10
8
6
6
4
4
2
2
0
0
0
5
10
15
20
25
30
35
40
45
0
5
10
15
20
25
30
TLP Voltage (V)
TLP Voltage (V)
SPHV36Transmission Line Pulsing(TLP) Plot
16
14
12
10
8
6
4
2
0
0
10
20
30
40
50
60
70
80
90
100
TLP Voltage (V)
© 2016 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 12/28/16
TVS Diode Arrays (SPA® Diodes)
General Purpose ESD Protection - SPHV Series
Soldering Parameters
Reflow Condition
Pb – Free assembly
tP
TP
Critical Zone
TL to TP
-Temperature Min (Ts(min)
)
150°C
Ramp-up
TL
TS(max)
Pre Heat -Temperature Max (Ts(max)
)
200°C
tL
-Time (min to max) (ts)
60 – 1±0 secs
Ramp-down
Preheat
Average ramp up rate (Liquidus) Temp (TL)
to peak
ꢀ°C/second max
TS(min)
tS
TS(max) toTL - Ramp-up Rate
ꢀ°C/second max
25
-Temperature (TL) (Liquidus)
Reflow
217°C
time to peak temperature
Time
-Temperature (tL)
60 – 150 seconds
260+0/-5 °C
PeakTemperature (TP)
Time within 5°C of actual peak
Temperature (tp)
20 – 40 seconds
Ramp-down Rate
6°C/second max
± minutes Max.
260°C
Time 25°C to peakTemperature (TP)
Do not exceed
Product Characteristics
Ordering Information
Lead Plating
Pre-Plated Frame
Copper Alloy
Part Number
Package
Marking
U2
Min. Order Qty.
10000
Lead Material
Lead Coplanarity
Substrate material
Body Material
Flammability
SPHV12-01ETG
0.0004 inches (0.102mm)
Silicon
SPHV15-01ETG
SPHV24-01ETG
SPHVꢀ6-01ETG
SPHV12-01KTG
SPHV15-01KTG
SPHV24-01KTG
SPHVꢀ6-01KTG
U5
U4
U6
U2
U5
U4
U6
SOD±±2
Molded Epoxy
UL 94 V-0
Notes :
1. All dimensions are in millimeters
2. Dimensions include solder plating.
ꢀ. Dimensions are exclusive of mold flash & metal burr.
4. Blo is facing up for mold and facing down for trim/form, i.e. reverse trim/form.
5. Package surface matte finish VDI 11-1ꢀ.
SOD±±2
with side
exposed
leadframe
10000
Part Marking System
Part Numbering System
–
SPHV
01
x
**
T G
G= Green
1
ꢀ
2
TVS Diode Arrays
ꢁ
®
(SPA Diodes)
T= Tape & Reel
Voltage
Package
Number of
Channels
2: SPHV12
5: SPHV15
4: SPHV24
6: SPHV36
E: SOD882
K: SOD882 with side
exposed leadframe
© 2016 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 12/28/16
TVS Diode Arrays (SPA® Diodes)
General Purpose ESD Protection - SPHV Series
Package Dimensions — SOD882(SPHVxx-01ETG)
Cathode by marking
Package
JEDEC
SOD±±2
MO-2ꢀ6
Symbol
Millimeters
Typ
Inches
Typ
Min
0.90
0.50
0.40
Max
1.10
0.70
0.60
Min
Max
0.041
0.026
0.024
0.325
0.325
A
B
C
D
E
F
1.00
0.0ꢀ7 0.0ꢀ9
0.022 0.024
0.016 0.020
0.01±
0.60
0.650
0.50
0.650
0.975
0.45
0.20
0.45
0.25
0.ꢀ5
0.55
0.00± 0.010
0.01± 0.020
0.012
0.022
Recommended Soldering Pad Layout
0.50
*Some ETG packaging will look like KTG packaging
due to the differing package construction between
various suppliers.
Package Dimensions — SOD882 with side exposed leadframe(SPHVxx-01KTG)
Cathode by marking
ꢀ
Package
SOD±±2 with side exposed leadframe
MO-2ꢀ6
ꢛꢙꢘꢚ
JEDEC
Symbol
ꢁ
Millimeters
Inches
Typ
Min
0.90
0.50
0.90
0.55
0.40
0.50
0.20
0.40
Typ
1.00
Max
1.10
0.70
1.10
0.75
0.60
0.70
0.ꢀ0
0.60
Min
Max
ꢛꢙꢛꢬꢝ
ꢛꢙꢪꢫ
A
B
C
D
E
F
0.0ꢀ7 0.0ꢀ9
0.020 0.024
0.0ꢀ7 0.0ꢀ9
0.022 0.026
0.016 0.020
0.020 0.024
0.00± 0.010
0.016 0.020
0.04ꢀ
0.02±
0.04ꢀ
0.0ꢀ0
0.024
0.02±
0.012
0.024
ꢡꢒꢑ ꢟꢎꢏꢠ
0.60
ꢍꢎꢉꢏ ꢄꢐꢑꢒꢓꢏꢉ ꢔꢏꢋꢉꢕꢖꢋꢗꢏ
ꢂ
ꢈ
1.00
0.975
0.65
0.325
0.50
ꢄ
ꢋ
ꢆ
0.650
ꢙ
0.60
G
H
I
0.25
ꢅ
ꢌ
0.50
0.325
ꢁꢒꢢꢢꢒꢗ ꢟꢎꢏꢠ
ꢉ
ꢣꢏꢊꢒꢗꢗꢏꢤꢉꢏꢉ ꢍꢒꢥꢉꢏꢖꢎꢤꢦ ꢧꢋꢉ ꢔꢋꢨꢒꢩꢢ
0.05 max
0.14
0.002 max
0.006
a
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
ꢇ
b
c
0.04
0.002
0.00ꢀ
0.004
ꢊ
0.075
0.10
ꢃ
d
ꢍꢎꢉꢏ ꢟꢎꢏꢠ
Embossed CarrierTape & Reel Specification
Symbol
Millimeters
A
B
0.70+/-0.045
1.10+/-0.045
0.65+/-0.045
1.55+/-0.10
C
d
E
1.75+/-0.05
F
ꢀ.50+/-0.05
2.00+/-0.10
4.00+/-0.10
2.00+/-0.10
±.00 + 0.ꢀ0 -0.10
P
P0
P1
W
ꢋꢊꢌ ꢍꢎꢇꢏ ꢎꢄꢂ ꢌꢃꢄ ꢐ ꢂꢃꢇꢁꢈꢉꢃꢊꢄ
ꢃꢄꢋꢎꢌꢁ ꢎꢄꢂ ꢑꢁꢁꢒ
ꢀꢁꢁꢂꢃꢄꢅ ꢆꢃꢇꢁꢈꢉꢃꢊꢄ
1
2
© 2016 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 12/28/16
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