VID75-06P1 [LITTELFUSE]
Insulated Gate Bipolar Transistor, 69A I(C), 600V V(BR)CES, N-Channel, ECOPAC-13;
| 型号： | VID75-06P1 |
| 厂家： | 
LITTELFUSE |
| 描述： | Insulated Gate Bipolar Transistor, 69A I(C), 600V V(BR)CES, N-Channel, ECOPAC-13 局域网 电动机控制 栅 晶体管 |
| 文件： | 总4页 (文件大小：350K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VDI75-06P1 VII 75-06P1
VID75-06P1 VIO75-06P1
IC25
VCES
= 69 A
= 600 V
IGBT Modules in ECO-PAC 2
Short Circuit SOA Capability
VCE(sat) typ. = 2.3 V
Square RBSOA
Preliminary data sheet
VII
VIO
VDI
VID
L9
X15
L9
X13
NTC
X15
NTC
X16
E2
A1
X15
L9
F1
T16
B3
S18
NTC
X16
K10
Pin arangement see outlines
X16
Features
IGBTs
• NPT IGBT's
- positive temperature coefficient of
saturation voltage
Symbol
VCES
Conditions
Maximum Ratings
TVJ = 25°C to 150°C
600
20
V
- fast switching
VGES
V
• FRED diodes
- fast reverse recovery
- low forward voltage
IC25
IC80
TC = 25°C
TC = 80°C
69
48
A
A
• Industry Standard Package
- solderable pins for PCB mounting
- isolated DCB ceramic base plate
ICM
VCEK
VGE = 15 V; RG = 22 Ω; TVJ = 125°C
RBSOA, Clamped inductive load; L = 100 µH
100
VCES
A
µs
W
tSC
(SCSOA)
VCE = VCES; VGE
non-repetitive
=
15 V; RG = 22 Ω; TVJ = 125°C
10
Advantages
• space and weight savings
• reduced protection circuits
Ptot
TC = 25°C
208
• leads with expansion bend for stress relief
Symbol
Conditions
Characteristic Values
Typical Applications
(TVJ = 25°C, unless otherwise specified)
min.
typ. max.
• AC and DC motor control
• AC servo and robot drives
• power supplies
VCE(sat)
IC = 75 A; VGE = 15 V; TVJ = 25°C
TVJ = 125°C
2.3
2.8
2.8
V
V
• welding inverters
VGE(th)
ICES
IC = 1 mA; VGE = VCE
4.5
6.5
V
VCE = VCES
;
VGE = 0 V; TVJ = 25°C
TVJ = 125°C
0.8 mA
4.4 mA
Recommended replacement:
Please contact your local
sales office
IGES
VCE = 0 V; VGE
=
20 V
100 nA
td(on)
tr
td(off)
tf
Eon
Eoff
50
55
300
30
1.8
1.4
ns
ns
ns
ns
mJ
mJ
Inductive load, TVJ = 125°C
VCE = 300 V; IC = 40 A
VGE = 15/0 V; RG = 22 Ω
Cies
VCE = 25 V; VGE = 0 V; f = 1 MHz
2.8
nF
RthJC
RthJH
(per IGBT)
with heatsink compound (0.42 K/m.K; 50 µm)
0.6 K/W
K/W
1.2
IXYS reserves the right to change limits, test conditions and dimensions.
© 2006 IXYS All rights reserved
1 - 4
VDI75-06P1 VII 75-06P1
VID75-06P1 VIO75-06P1
VII
Reverse diodes (FRED)
Symbol
Conditions
Maximum Ratings
IF25
IF80
TC = 25°C
TC = 80°C
56
35
A
A
Symbol
VF
Conditions
Characteristic Values
min.
typ. max.
IF = 40 A; TVJ = 25°C
TVJ = 125°C
2.32 2.59
1.58
V
V
IRM
trr
IF = 30 A; di /dt = 500 A/µs; TVJ = 125°C
VR = 300 V;FVGE = 0 V
15
70
A
ns
RthJC
RthJH
1.3 K/W
K/W
B3
with heatsink compound (0.42 K/m.K; 50 µm)
2.6
Temperature Sensor NTC
Symbol
Conditions
Characteristic Values
min. typ. max.
VIO
R25
B25/50
T = 25°C
4.75
5.0
3375
5.25 kΩ
K
Module
Symbol
Conditions
Maximum Ratings
TVJ
Tstg
-40...+150
-40...+150
°C
°C
VISOL
Md
IISOL ≤ 1 mA; 50/60 Hz
3000
V~
mounting torque (M4)
1.5 - 2.0
14 - 18
50
Nm
lb.in.
m/s2
a
Max. allowable acceleration
Symbol
Conditions
Characteristic Values
min. typ. max.
dS
dA
Creepage distance on surface (Pin to heatsink)
Strike distance in air (Pin to heatsink)
11.2
11.2
mm
mm
Weight
24
g
VDI
VID
Data according to IEC 60747 and refer to a single transistor or diode unless otherwise stated.
IXYS reserves the right to change limits, test conditions and dimensions.
© 2006 IXYS All rights reserved
2 - 4
VDI75-06P1 VII 75-06P1
VID75-06P1 VIO75-06P1
150
150
VGE= 17 V
A
A
1
15 V
13 V
IC
IC
VGE= 17 V
90
60
30
0
90
60
30
0
15 V
13 V
11V
11V
TVJ = 25°C
TVJ = 125°C
9V
9V
42T60
42T60
V
0
1
2
3
4
5
V
6
0
1
2
3
4
5
6
VCE
VCE
B3
Fig. 1 Typ. output characteristics
Fig. 2 Typ. output characteristics
90
150
A
A
IF
VCE = 20 V
IC
60
45
30
15
0
90
60
30
0
TVJ = 125°C
TVJ = 25°C
T
VJ = 125°C
TVJ = 25°C
42T60
42T60
V
0,0
0,5
1,0
1,5
2,0
4
6
8
10
12
14 V 16
VF
VGE
Fig. 3 Typ. transfer characteristics
Fig. 4 Typ. forward characteristics of
free wheeling diode
50
A
30
20
10
0
150
20
V
ns
trr
trr
15
IRM
VGE
VCE = 300 V
90
60
30
0
IC
= 50 A
10
5
TVJ = 125°C
VR = 300 V
IF = 30 A
IRM
42T60
42T60
0
0
200
400
600
-di/dt
A/μs 1000
0
40
80
120 nC 160
QG
Fig. 5 Typ. turn on gate charge
Fig. 6 Typ. turn off characteristics of
free wheeling diode
IXYS reserves the right to change limits, test conditions and dimensions.
© 2006 IXYS All rights reserved
3 - 4
VDI75-06P1 VII 75-06P1
VID75-06P1 VIO75-06P1
100
ns
400
10,0
mJ
4
mJ
3
td(on)
ns
Eoff
7,5
75
300
t
Eoff
Eon
t
tr
td(off)
5,0
2,5
0,0
50
25
0
2
1
0
200
VCE = 300 V
VCE = 300 V
VGE
= 15 V
VGE
= 15 V
RG = 22 Ω
TVJ = 125°C
RG = 22 Ω
TVJ = 125°C
100
Eon
tf
42T60
42T60
0
120
A
0
40
80
IC
A
0
40
80
IC
120
B3
Fig. 7 Typ. turn on energy and switching
Fig. 8 Typ. turn off energy and switching
times versus collector current
4
80
ns
60
3
600
ns
td(on)
Eon
mJ
mJ
Eoff
Eon
Eoff
t
t
3
2
1
2
1
0
400
tr
td(off)
VCE = 300 V
VCE = 300 V
VGE
= 15 V
VGE
= 15 V
40
200
IC = 50 A
TVJ = 125°C
IC = 50 A
TVJ = 125°C
tf
42T60
42T60
20
0
Ω
60
0
10
20
30
40
RG
50 Ω 60
0
10
20
30
40
RG
50
Fig. 9 Typ. turn on energy and switching
Fig. 10 Typ. turn off energy and switching
times versus gate resistor
120
A
10
K/W
1
diode
IGBT
90
ZthJC
ICM
RG = 22 Ω
0,1
TVJ = 125°C
60
30
0
0,01
0,001
single pulse
42T60
VID...75-06P1
0,0001
0,000010,0001 0,001 0,01
0,1
1
s
10
0
100 200 300 400 500 600 700
VCE
V
t
Fig. 11 Reverse biased safe operating area
Fig. 12 Typ. transient thermal impedance
RBSOA
IXYS reserves the right to change limits, test conditions and dimensions.
© 2006 IXYS All rights reserved
4 - 4
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