VVZB135-16NO1 [LITTELFUSE]
Silicon Controlled Rectifier, 211.95A I(T)RMS, 1600V V(RRM), 3 Element, MODULE-22;型号: | VVZB135-16NO1 |
厂家: | LITTELFUSE |
描述: | Silicon Controlled Rectifier, 211.95A I(T)RMS, 1600V V(RRM), 3 Element, MODULE-22 局域网 栅 双极性晶体管 栅极 |
文件: | 总5页 (文件大小:266K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
VVZB 135
VRRM = 1600 V
Three Phase Rectifier Bridge
with IGBT and Fast Recovery Diode
for Braking System
IdAVM = 135 A
10
19
+
+
11 13
12 20
16 15 14
NTC
VRRM
Type
V
6+7
4+5
2+3
1
1600
VVZB 135-16 NO1
17
E72873
8+9
18 21+22
See outline drawing for pin arrangement
Symbol
Conditions
Maximum Ratings
Ftures
• SoleringconnectionsforPCBmounting
• Convenient package outline
• Thermistor
VRRM
IdAVM
1600
135
V
A
TC = 85°C; sinusoidal 120°
IFSM
TVJ = 45°C; t = 10 ms; VR = 0 V
TVJ = 150°C; t = 10 ms; VR = 0 V
700
610
A
• Isolation voltage 2500 V~
Applications
I2t
TVJ = 45°C; t = 10 ms; VR = 0 V
TVJ = 150°C; t = 10 ms; VR = 0 V
245
1860
A2s
A2s
• Drive Inverters with brake system
Ptot
TC = 25°C per diode
190
100
W
Advantages
(di/dt)cr
TVJ = TVJM
;
repetitive; IT = 150 A
A/µs
• 2 functions in one package
• Easy to mount with two screws
• Suitable for wave soldering
• High temperature and power cycling
capability
f = 50 Hz; tP = 200 µs
VD = 2/3 VDRM
IG = 0.45 A;
;
non repetitive; IT = Id(AV)3
500
A/µs
V/µs
diG/dt = 0.45 A/µs
(dv/dt)cr
PGM
TVJ = TVJM; VDR = 2/3 VDRM
RGK = ∞; method 1 (linear voltage rse)
;
1000
TVJ = TVJM tP = 30
;
10
5
W
W
IT = Id(AV)/3; tP = 300 µs
PGAVM
0.5
W
Recommended replacement:
VVZB 135-16ioXT
VCES
VGE
TVJ = 25°C to 150
Continuous
1200
20
V
V
IC25
IC80
TC = 25°C; DC
TC = 80°C; DC
95
67
A
A
ICM
tp = Pulse width limited by TVJM
TC = 25°C
100
380
A
Ptot
W
VRRM
IFAV
IFRMS
IFRM
1200
27
38
tbd
V
A
A
A
TC = 80°C; rectangular d = 0.5
TC = 80°C; rectangular d = 0.5
TC = 80°C; tP = 10 µs; f = 5 kHz
IFSM
Ptot
TVJ = 45°C; t = 10 ms
TC = 25°C
200
130
A
W
Data according to IEC 60747
IXYS reserves the right to change limits, test conditions and dimensions.
20070912a
© 2007 IXYS All rights reserved
1 - 5
VVZB 135
Symbol
Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
IR, ID
VR = VRRM
VR = VRRM
;
;
TVJ = 25°C
TVJ = 150°C
0.1 mA
20 mA
VF, VT
IF = 80 A;
TVJ = 25°C
1.43
V
VT0
rT
for power-loss calculations only
TVJ = 150°C
0.85
7.1 mΩ
V
VGT
IGT
VD = 6 V;
VD = 6 V;
TVJ = 25°C
TVJ = -40°C
TVJ = 25°C
TVJ = -40°C
1.5
1.6
78 mA
V
V
200 mA
VGD
IGD
TVJ = TVJM
TVJ = TVJM
;
;
VD = 2/3 VDRM
VD = 2/3 VDRM
0.2
5
V
mA
IL
VD = 6 V; tG = 10 µs;
diG/dt = 0.45 A/µs; IG = 0.45 A
450 mA
IH
TVJ = TVJM; VD = 6 V; RGK = ∞
100 mA
tgd
VD = ½ VDRM
diG/dt = 0.45 A/µs; IG = 0.45 A
;
2
µs
s
tq
TVJ = TVJM; VR = 100 V;
VD = 2/3 VDRM; tP = 200 µs;
dv/dt = 15 V/µs; IT = 20 A;
-di/dt = 10 A/µs
150
RthJC
RthCH
per diode
0.65 K/W
K/W
0.2
VBR(CES)
VGE(th)
VGS = 0 V; IC = 0.1 mA
IC = 8 mA
100
4
V
V
6.45
ICES
VCE = 1200 V; TVJ
VCE = 0,8•VCES;TVJ = 125°C
=
25°C
0.1 mA
0.5 mA
VCEsat
VGE = 15 V; IC = 100 A
3.5
10
V
µs
A
tSC (SCSOA)
RBSOA
VGE = 15 V; VCE = 900 V; TVJ = 125°C
VGE = 15 V; VCE = 1200 VJ = 125°C;
100
clamped inductive loaL = 00 µH;
RG = 22 Ω
Cies
VCE = 25 V; f = 1 Mz, VGE = 0 V
3.8
nF
VCE = 720 V; IC 50 A
td(on)
td(off)
Eon
150
680
6
ns
ns
mJ
mJ
VGE = 15 V; RG = 22 Ω
Inductive load; L = 100 µH;
TVJ = 125°C
Eoff
5
RthJC
RthCH
0.33 K/W
K/W
0.1
IXYS reserves the right to change limits, test conditions and dimensions.
20070912a
© 2007 IXYS All rights reserved
2 - 5
VVZB 135
Symbol
Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
10
V
1: I
GT, TVJ = 125°C
2: IGT, TVJ 25°C
=
3: IGT, TVJ = -40°C
IR
VR = VRRM
;
TVJ = 25°C
0.25 mA
VG
VR = 1200 V; TVJ = 125°C
1
mA
VF
IF = 30 A; TVJ = 25°C
2.76
1.3
16 mΩ
V
3
VT0
rT
For power-loss calculations only
TVJ = 150°C
V
2
6
1
5
1
4
IRM
trr
IF = 50 A; -diF/dt = 100 A/µs; VR = 100 V
IF = 1 A; -diF/dt = 200 A/µs; VR = 30 V
5.5
40
11
A
ns
4: P
GAV = 0.5 W
RthJC
RthCH
0.9 K/W
K/W
5: PGM 5 W
=
0.25
I
GD, TVJ = 125°C
6: PGM = 10 W
1
T
1
0.1
R25
B25/50
4.75
5.0 5.25 kΩ
(
B25/100
)
298K
mA
1
10
100
1000
IG
R(T) = R25 • e
3375
K
Fig. 1 Gate trigger characteristics
Symbol
Conditions
Maximum Ratings
1000
TVJ
TVJM
Tstg
-40...+150
150
-40...+125
°C
°C
T
VJ = 25°C
μs
tgd
VISOL
50/60 Hz; t = 1 min
IISOL ≤ 1 mA; t = 1 s
2500
3000
V~
V~
typ.
Limit
100
10
1
Md
Mounting torque
2.7...3.3
Nm
dS
dA
a
Creep distance on surface
Strike distance in air
Maximum allowable acceleration
12.7
9.6
50
mm
mm
m/s2
Weight
typ.
180
g
Dimensions in mm (1 mm = 0.0394")
10
100
mA 1000
IG
Fig. 2 Gate trigger delay time
IXYS reserves the right to change limits, test conditions and dimensions.
20070912a
© 2007 IXYS All rights reserved
3 - 5
VVZB 135
150
A
600
10000
I2t
VR = 0 V
50 Hz
80 % VRRM
A
125
500
A2s
IT
ITSM
100
75
50
25
0
400
300
200
100
0
TVJ =45°C
TVJ = 45°C
TVJ =150°C
1000
TVJ =150°C
TVJ =125°C
TVJ = 25°C
100
150
s
0.0
0.5
1.0
1.5
VT
V
2.0
0.001
0.01
0.1
1
ms
10
1
t
t
Fig. 5 I²t versus time
Fig. 3 Forward current versus
voltage drop per leg
Fig. 4 Surge overload current
(perthyristor/diode)
250
W
RthKA K/W =
0.2
A
0.5
200
120
Ptot
ITAVM
150
90
60
30
0
1
100
50
0
1.5
2
3
5
A
0
30
60
90
IRMS
120
0
25
50
75
100
TA
125
150
0
25 50 75 100 125 150
TC
Fig. 6 Power dissipation versudireoutput current and ambient temperature
Fig. 7 Maximum forward current
at case temperature
0.7
K/W
0.6
0.5
ZthJC
0.4
0.3
0.2
0.1
0.0
Constants for ZthJC calculation:
Rthi / (K/W)
ti / (s)
0.03
0.083
0.361
0.176
0.0005
0.008
0.094
0.45
VVZB 135
0.001
0.01
0.1
1
10
s
t
Fig. 8 Transient thermal impedance junction to case (per thyristor/diode)
IXYS reserves the right to change limits, test conditions and dimensions.
20070912a
© 2007 IXYS All rights reserved
4 - 5
VVZB 135
90
A
150
A
120
TVJ = 125°C
IF
TVJ = 25°C
IC
T
VJ = 125°C
60
30
0
90
60
30
0
TVJ = 25°C
VGE = 15V
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
V
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
V
VF
VCE
Fig. 9 Typ. output characteristics
Fig. 10 Typ. forward characteristics of
free wheeling diode
9
900
10
1000
td(off)
mJ
8
ns
ns
mJ
800
Eoff
Eoff
td(off)
t
t
6
3
0
600
6
4
2
0
600
400
200
0
VCE = 720 V
VGE 15 V
Eoff
VCE = 720 V
=
300
VGE
IC
=
=
15 V
50 A
RG = 22 Ω
TVJ = 125°C
Eoff
TVJ = 125°C
tf
tf
120
A
0
10
20
30
40
50
60
Ω
0
20
40
60
80
IC
100
RG
Fig. 11 Typ. turn off energy and switching
times versus collecr current
Fig. 12 Typ. turn off energy and switching
times versus gate resistor
1
diode
IGBT
K/W
0.1
10000
ZthJC
0.01
Ω
R
1000
0.001
single pulse
VVZB 135
100
0.0001
0.000010.0001 0.001 0.01
0.1
1
10
0
25
50
75
100
125 °C 150
s
t
T
Fig. 13 Typ. transient thermal impedance
Fig. 14 Typ. thermistor resistance versus
temperature
IXYS reserves the right to change limits, test conditions and dimensions.
20070912a
© 2007 IXYS All rights reserved
5 - 5
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