SST180S [LIUJING]
可控硅、晶闸管;
| 型号： | SST180S |
| 厂家： | 
浙江柳晶整流器有限公司 |
| 描述： | 可控硅、晶闸管 可控硅 |
| 文件： | 总6页 (文件大小：674K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SST180S
Phase Control Thyristors
STUD VERSION
Liujing rectifier co., Ltd.
FEATURES
TYPICAL APPLICATIONS
1). Center amplifying gate
1). DC motor controls
2). Hermetic metal case with ceramic insulator
(Also available with glass-metal seal up to 1200V)
3). International standard case TO-209AB (TO-93)
4). Threaded studs UNF 3/4 - 16UNF2A or ISO M16x1.5
5). Compression Bonded Encapsulation for heavy duty
operations such as severe thermal cycling
2). Controlled DC power supplies
3). AC controllers
MAJOR RATINGS AND CHARACTERISTICS
Parameters
SST180S
Unit
180
85
A
℃
IF(AV)
IF(RMS)
IFSM
@ TC
360
A
@ 50Hz
5700
A
@ 60Hz
@ 50Hz
@ 60Hz
5970
A
163
KA2s
KA2s
V
I2t
149
VDRM/VRRM
400 to 1600
100
μ
typical
Tq
TJ
s
℃
40 to 125
ELECTRICAL SPECIFICATIONS
1). Voltage Ratings
VDRM/VRRM, maximum
repetitive peak
VRSM, maximum non-
I
DRM/IRRM max.
repetitive peak
reverse voltage
Type number
Voltage Code
@ TJ = TJ max
reverse voltage
mA
V
V
04
08
12
14
16
400
500
800
900
1200
1400
1600
1300
1500
1700
SST180S
30
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SST180S
2). Forward Conduction
Parameters
SST180S Unit
Conditions
Max. average forward current
@ Case temperature
180
85
A
℃
A
°
180 conduction, half sine wave
IT(AV)
℃
DC @ 78 case temperature
IT(RMS) Max. RMS forward current
360
5700
5970
4800
5000
163
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
No voltage
reapplied
100% VRRM
reapplied
No voltage
reapplied
100% VRRM
reapplied
Max. peak, one-cycle forward,
ITSM
A
non-repetitive surge current
Sinusoidal half wave,
Initial TJ = TJ max.
148
I2t
Maximum I2t for fusing
KA2s
115
105
2
2
2
√
√
√
s t = 0.1 to 10ms, no voltage reapplied
I
t
Maximum I t for fusing
1630
0.92
0.98
0.88
0.81
1.55
600
KA
π
π
VT(TO)1 Low level value of threshold voltage
VT(TO)2 High level value of threshold voltage
(16.7% x
x IF(AV) < I <
x IF(AV)), TJ = TJ max.
π
x IF(AV)), TJ = TJ max.
V
π
(I >
x IF(AV)), TJ = TJ max.
π
rt1
rt2
Low level value of forward slope resistance
High level value of forward slope resistance
(16.7% x
x IF(AV) < I <
x IF(AV)), TJ = TJ max.
Ipk= 620A, TJ = TJ max, tp = 10ms sine pulse
Ω
m
π
(I >
VTM Max. forward voltage drop
V
IH
IL
Maximum holding current
Typical latching current
Max. non-repetitive rate of rise
of turned-on current
℃
TJ = 25 , anode supply 12V resistive load
mA
1000 (300)
Ω
μ
s
Gate drive 20V, 20 , tr ≤ 1
μ
s
di/dt
td
1000
1.0
A/
TJ = TJ max, anode voltage ≤ 80% VDRM
μ
Gate current 1A, dig/dt = 1A/
s
Typical delay time
Typical turn-off time
℃
℃
Vd = 0.67% V , T = 25 VDRM, TJ =25
μ
s
μ
TM = 300A, TJ = TJ max, di/dt = 20A/ s, VR = 50V
I
tq
100
500
30
μ
Ω
μ
s
dv/dt = 20V/ s, Gate 0V 100 , tp = 500
Maximum critical rate of rise of
off-state voltage
μ
s
dv/dt
V/
TJ = TJ max. linear to 80% rated VDRM
IDRM Max. peak reverse and off-state
IRRM leakage current
mA
TJ = TJ max. rated VDRM/VRRM applied
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SST180S
3). Triggering
Parameters
SST180S
10.0
2.0
Unit
W
A
Conditions
PGM Maximum peak gate power
TJ = TJ max, tp ≤ 5ms
PG(AV) Maximum average gate power
IGM Max. peak positive gate current
+VGM Max. peak positive gate current
-VGM Maximum peak positive gate voltage
3.0
TJ = TJ max, f = 50Hz, d% = 50
20
V
TJ = TJ max, tp ≤ 5ms
5.0
TYP.
MAX.
℃
180
90
-
150
-
TJ = - 40
IGT
DC gate current required to trigger
mA
℃
Max. required gate trigger
TJ = 25
current/voltage are the
lowest value which
℃
℃
40
TJ = 125
2.9
1.8
1.2
-
TJ = - 40
will trigger all units 6V
anode-to-cathode applied
℃
3.0
-
VGT DC gate voltage required to trigger
V
TJ = 25
℃
TJ = 125
Max. gate current/ voltage
not to trigger is the max.
value which. will not trigger
any unit with rated VDRM
anode-to-cathode applied
IGD
DC gate current not to trigger
mA
V
10
TJ = TJ max.
VGD DC gate voltage not to trigger
0.25
℃
℃
TJ
Max. operating temperature range
Max. storage temperature range
-40 to 125
-40 to 150
0.105
T
stg
RthJC Max. thermal resistance, junction to case
RthCS Max. thermal resistance, case to heatsink
K/W DC operation
K/W Mounting surface, smooth, flat and greased
Nm
Non lubricated threads
0.04
31 (275)
24.5 (210)
280
T
Mounting torque
(lbf-in) Lubricated threads
wt
Approximate weight
Case style
g
See Outline Table
TO-93
Δ
RthJC Conduction
(The following table shows the increment of thermal resistence RthJC when devices operate at different conduction angles than DC)
Conduction angle
Sinusoidal conduction
Rectangular conduction
Units
Conditions
°
°
180
0.016
0.019
0.025
0.036
0.060
0.012
0.020
0.027
0.037
0.060
120
°
K/W
TJ = TJ max.
90
60
30
°
°
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SST180S
PERFORMANCE CURVES FIGURE
130
130
120
110
100
90
R
(DC) = 0.105 K/ W
R
(DC) = 0.105 K/ W
thJC
thJC
120
110
100
90
Conduction Pe riod
Conduction Angle
30°
30°
60°
80
60°
90°
90°
120°
120°
DC
180°
180°
80
70
0
50
100 150 200 250 300
0
50 100 150 200 250 300 350 400 450
Average On-state Current (A)
Average On-state Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
350
R
180°
120°
300
=
0
90°
60°
.
1
K
/
0
W
.
2
250
30°
5
-
K
D
/
W
e
0
l
t
a
.
3
K
R
/
W
200
RM S Limit
150
0
.
6
K
/
Conduction Angle
W
W
100
50
0
1
.
2
K
/
T = 125°C
J
0
50
100 150 200 250
3
0
0
50
75
100
125
Maximum Allowable Ambient Te mperature (°C)
Average On-state Current (A)
Fig. 3 - On-state Power Loss Characteristics
500
450
400
350
300
250
200
150
100
50
DC
180°
120°
90°
0
.
0
t
6
h
K
S
A
0
/
.
0
W
8
K
/
W
60°
0
.
1
6
30°
K
/
W
0
.
2
K
/
W
0
.
3
K
/
W
RM S Limit
Conduction Pe riod
0
.
6
K
/
W
1
K
/
W
T = 125°C
J
0
0
50 100 150 200 250 300 350 400 4
Average On-state Current (A)
Fig. 4 - On-state Power Loss Characteristics
5
0
50
75
100
125
Maximum Allowable Ambient Te mperature (°C)
7000
6500
6000
5500
5000
4500
4000
3500
3000
7000
6500
6000
5500
5000
4500
4000
3500
3000
At Any Ra ted Lo ad Condition And With
At Any Ra ted Lo ad Condition And With
Ra ted V
RRM
Applied Fo llowing Su rge.
Ra ted V Applied Fo llowing Su rge.
RRM
Initial T = 125°C
Initial T = 125°C
J
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
J
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
1
10
100
1
10
100
NumberOf Eq ual Amplitude Ha lf Cycle Current Pulses(N)
NumberOf Eq ual Amplitude Ha lf Cycle Current Pulses(N)
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
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SST180S
10000
1000
100
T = 25°C
J
T = 125°C
J
0.5
1
1.5
2
2.5
3
3.5
4
Inst antaneous On-state Voltage (V)
Fig. 7 - On-state Voltage Drop Characteristics
1
0.1
St eady St ate Value
= 0.105 K/ W
R
thJC
(DC Operation)
0.01
0.001
0.001
0.01
0.1
1
10
Sq uare Wave Pulse Duration (s)
Fig. 8 - Thermal Impedance ZthJC Characteristic
100
10
1
(1) PGM = 10W, tp = 4ms
(2) PGM = 20W, tp = 2ms
(3) PGM = 40W, tp = 1ms
Re ctangular gate pulse
a) Re commended load line for
rated di/dt : 20V, 10ohms; tr<=1 µs
b) Re commended load line for
<=30% rated di/dt : 10V, 10ohms
tr<=1 µs
(4) PGM = 60W, tp = 0.66ms
(a)
(b)
(1) (2) (3) (4)
VGD
IGD
Frequency Limited by PG(AV)
0.1
0.001
0.01
0.1
1
10
100
Inst antaneous Gate Current (A)
Fig. 9 - Gate Characteristics
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SST180S
OUTLINE
Case Style TO-93(ceramic)
E-mail: rectifier@163.com
thyristors@yahoo.cn
YUEQING LIUJING RECTIFIER CO., LTD
Sale Departmant: Liujing Building, Yueqing City,
Zhejiang Province
Add: Wanao Industrial Zone, Yueqing city,
Zhejiang Province
Tel: 0086-577-62519692 0089-577-62519693
Fax: 0086-577-62518692
打造最具竞争力的电力半导体产品
International Export: 0086-577-62571902
Technical Support: 0086-15868768965
After Service: 400-6606-086
To be the most competitive Power Semiconductor
Devices manufactory.
http://www.china-liujing.com
http://www.liujingdianqi.cn
http://www.cnrectifier.com
http://www.cnthyristor.com.cn
MSN: thristors@hotmail.com
LIUJING reserves the right to change limits, test conditions and dimensions.
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