SST200 [VISHAY]
N-Channel JFETs; N沟道JFET的
| 型号： | SST200 |
| 厂家： | 
VISHAY |
| 描述： | N-Channel JFETs |
| 文件： | 总4页 (文件大小：41K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SST200/200A
Vishay Siliconix
New Product
N-Channel JFETs
PRODUCT SUMMARY
VGS(off) (V)
V(BR)GSS Min (V)
gfS Min (mS)
IDSS Min (mA)
–0.3 to –0.9
–25
0.25
0.7
FEATURES
BENEFITS
APPLICATIONS
D Low Cutoff Voltage: <0.9 V
D High Input Impedance
D Very Low Noise
D High Quality Low-Level Signal
D Mini-Microphones
Amplification
D Hearing Aids
D Low Signal Loss/System Error
D High-Gain, Low-Noise Amplifiers
D High System Sensitivity
D High Gain: AV = 80 @ 20 mA
D Low-Current, Low-Voltage
Battery-Powered Amplifiers
D Ultra High Input Impedance
Pre-Amplifiers
DESCRIPTION
The SST200/200A features low leakage, very low noise and
low cutoff voltage for use with low-level power supplies. The
SST200/200A is excellent for battery powered equipment and
low current amplifiers such as mini-microphones.
The TO-236 (SOT-23) and SOT-323 (SC-70 3-leads)
packages, provide surface-mount capability and is available in
tape-and-reel for automated assembly.
For applications information see AN102 and AN106.
SOT-323
(SC-70 3-LEADS)
TO-236
(SOT-23)
D
S
1
2
D
S
1
2
3
G
3
G
Top View
Top View
SST200 (P0)*
*Marking Code for TO-236
SST200A (C)*
*Marking Code for SOT-323
Document Number: 70976
S-20517—Rev. D, 15-Apr-02
www.vishay.com
6-1
SST200/200A
New Product
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
Power Dissipation
Gate-Drain, Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 V
Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 mA
a
To-236 (SOT-23) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350 mW
b
SC-70 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150 mW
1
Lead Temperature ( / ” from case for 10 sec.) . . . . . . . . . . . . . . . . . . . 300_C
16
Notes
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 150_C
Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 150_C
a. Derate 2.8 mW/_C above 25_C
b. Derate 1.2 mW/_C above 25_C
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)
A
Limits
Typa
Parameter
Symbol
Test Conditions
Min
Max
Unit
Static
Gate-Source
Breakdown Voltage
V
I
G
= –1 mA , V = 0 V
–25
(BR)GSS
DS
V
Gate-Source Cutoff Voltage
V
V
= 15 V, I = 10 mA
–0.3
–0.9
0.7
GS(off)
DS
D
b
Saturation Drain Current
I
V
= 15 V, V = 0 V
0.15
mA
pA
nA
DSS
DS
GS
V
= –20 V, V = 0 V
–2
–1
–2
2
–100
GS
DG
DS
Gate Reverse Current
I
GSS
T
A
= 125_C
Gate Operating Current
Drain Cutoff Current
I
G
V
= 10 V, I = 0.1 mA
D
pA
V
I
V
= 15 V, V = –5 V
DS GS
D(off)
Gate-Source Forward Voltage
V
I
= 1 mA , V = 0 V
0.7
GS(F)
G
DS
Dynamic
Common-Source
Forward Transconductance
V
= 15 V, V = 0 V
GS
f = 1 kHz
DS
g
0.25
0.7
4.5
1.3
6
mS
pF
fs
Common-Source
Input Capacitance
C
iss
rss
V
V
= 15 V, V = 0 V
GS
f = 1 MHz
DS
DS
Common-Source
Reverse Transfer Capacitance
C
= 10 V, V = 0 V
GS
f = 1 kHz
nV⁄
√Hz
Equivalent Input Noise Voltage
e
n
Notes
a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
NPA
b. Pulse test: PW v300 ms duty cycle v3%.
Document Number: 70976
S-20517—Rev. D, 15-Apr-02
www.vishay.com
6-2
SST200/200A
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (T = 25_C UNLESS OTHERWISE NOTED)
A
Drain Current and Transconductance
vs. Gate-Source Cutoff Voltage
Gate Leakage Current
2.0
1.8
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
10 nA
1 nA
IG @ ID = 500 mA
ID = 100 mA
IDSS @ VDS = 10 V, VGS = 0 V
@ VDS = 10 V, VGS = 0 V
f = 1 kHz
g
fs
1.6
1.4
1.2
1.0
T
= 125_C
A
IGSS @ 125_C
ID = 500 mA
100 pA
10 pA
1 pA
g
fs
0.8
0.6
0.4
I
D
= 100 mA
I
T
= 25_C
DSS
A
IGSS @ 25_C
0.2
0
0.1 pA
0.0
0.2
0.4
0.6
0.8
1.0
0
15
VDG – Drain-Gate Voltage (V)
30
V
GS(off) – Gate-Source Cutoff Voltage (V)
Output Characteristics
Transfer Characteristics
400
500
VGS(off) = –0.7 V
VDS = 10 V
VGS(off) = –0.7 V
VGS = 0 V
360
240
400
300
200
–0.1 V
–0.2 V
T
A
= –55_C
25_C
160
–0.3 V
–0.4 V
125_C
–0.1
80
0
100
0
–0.5 V
0
–0.2
–0.3
–0.4
–0.5
0
4
8
12
16
20
VDS – Drain-Source Voltage (V)
VGS – Gate-Source Voltage (V)
Transconductance vs. Gate-Source Voltage
1.5
VGS(off) = –0.7 V
VDS = 10 V
f = 1 kHz
1.2
0.9
0.6
0.3
0
T
A
= –55_C
25_C
125_C
0
–0.1
–0.2
–0.3
–0.4
–0.5
VGS – Gate-Source Voltage (V)
Document Number: 70976
S-20517—Rev. D, 15-Apr-02
www.vishay.com
6-3
SST200/200A
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (T = 25_C UNLESS OTHERWISE NOTED)
A
Circuit Voltage Gain vs. Drain Current
On-Resistance vs. Drain Current
200
2000
g
R
L
fs
A
+
V
1 ) R g
os
L
160
120
1600
1200
Assume VDD = 15 V, VDS = 5 V
10 V
VGS(off) = –0.7 V
R
+
I
L
D
80
800
VGS(off) = –0.7 V
–1.5 V
–1.5 V
40
0
400
0
0.01
0.1
D – Drain Current (mA)
1
0.01
0.1
1
I
ID – Drain Current (mA)
Common-Source Input Capacitance
vs. Gate-Source Voltage
Common-Source Reverse Feedback Capacitance
vs. Gate-Source Voltage
10
8
5
f = 1 MHz
f = 1 MHz
4
3
2
1
0
6
4
VDS = 0 V
VDS = 0 V
10 V
2
0
10 V
0
–4
–8
–12
–16
–20
0
–4
–8
–12
–16
–20
V
GS – Gate-Source Voltage (V)
VGS – Gate-Source Voltage (V)
Output Characteristics
Equivalent Input Noise Voltage vs. Frequency
300
240
20
16
VGS(off) = –0.7 V
VDS = 10 V
VGS = 0 V
–0.1
ID @ 100 mA
180
120
60
12
8
–0.2
VGS = 0 V
–0.3
–0.4
–0.5
4
0
0
0
0.5
0.1
0.2
0.3
0.4
10
100
1 k
10 k
100 k
V
DS – Drain-Source Voltage (V)
f – Frequency (Hz)
Document Number: 70976
S-20517—Rev. D, 15-Apr-02
www.vishay.com
6-4
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