BB535 [LRC]

Silicon Variable Capacitance Diode; 硅变容二极管
BB535
型号: BB535
厂家: LESHAN RADIO COMPANY    LESHAN RADIO COMPANY
描述:

Silicon Variable Capacitance Diode
硅变容二极管

二极管 变容二极管
文件: 总3页 (文件大小:83K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
LESHAN RADIO COMPANY, LTD.  
Silicon Variable Capacitance Diode  
• For UHF and TV/TR tuners  
BB 535  
• Large capacitance ratio, low series resistance  
1
1
2
2
CATHODE  
ANODE  
CASE 477– 02, STYLE 1  
SOD– 323  
MAXIMUMRATINGS  
Parameter  
Symbol  
Value  
Unit  
V
Diode Reverse Voltage  
Peak reverse voltage ( R  
Forward Current  
V
30  
35  
R
>
5k)  
V RM  
I F  
V
20  
mA  
°C  
Operating temperature range  
Storage temperature  
T op  
T stg  
- 55 ~ + 125  
- 55 ... + 150  
°C  
THERMALRESISTANCE  
Parameter  
Symbol  
Value  
Unit  
Junction - ambient  
R thJA  
<
450  
K/W  
DCCHARACTERISTICS  
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
Reverse current  
IR  
nA  
V R = 30 V, T A = 25 °C  
V R = 30 V, T A = 85 °C  
10  
200  
ACCHARACTERISTICS  
Diode capacitance  
V R = 1 V, f = 1 MHz  
V R = 2 V, f = 1 MHz  
V R = 25 V, f = 1 MHz  
V R = 28 V, f = 1 MHz  
Capacitance ratio  
C T  
pF  
17.5  
14.01  
2.05  
1.9  
18.7  
15  
20  
16.1  
2.4  
2.24  
2.1  
2.3  
C T2 / C T25  
C T1 / C T28  
C T / C T  
r s  
V R = 2 V, V R = 25 V, f = 1 MHz  
Capacitance ratio  
6
8.2  
6.7  
8.9  
7.5  
9.8  
2.5  
V R = 1 V, V R = 28 V, f = 1 MHz  
Capacitance matching  
V R = 1 ... 28 V, f = 1 MHz  
Series resistance  
%
V R = 3 V, f = 470 MHz  
Series inductance  
0.55  
2
0.65  
L s  
nH  
S6–1/3  
LESHAN RADIO COMPANY, LTD.  
BB 535  
Temperature coefficient of the diodecapacitance  
Diode capacitance  
T Cc = f ( V R ) f = 1MHz  
C T = f ( V R ) f = 1MHz  
10 -1  
20  
18  
16  
14  
12  
10  
8
10 -2  
10 -3  
10 -4  
10 -5  
6
4
2
0
10 0  
10 1  
10 2  
0
5
10  
15  
20  
25  
30  
V R ( V )  
V R ( V )  
Reverse current  
Normalized diode capacitance  
I R = f ( T A ), V R = 28V  
C (T A) / C (25°C) = f ( T A ), f = 1MHz, V R = Parameter  
10 3  
1.06  
1.04  
1V  
10 2  
1.02  
1.00  
0.98  
0.96  
2V  
25V  
10 1  
10 0  
-10  
10  
30  
50  
70  
90 100  
-30  
-10  
10  
30  
50  
70  
90  
110  
T A ( °C )  
T A ( °C )  
S6–2/3  
LESHAN RADIO COMPANY, LTD.  
BB 535  
Reverse current  
I R = f ( V R ), T A = Parameter  
10 3  
10 2  
10 1  
10 0  
10 -1  
85°C  
25°C  
10 0  
10 1  
10 2  
V R ( V )  
S6–3/3  

相关型号:

BB535-E7904

Variable Capacitance Diode, 18.7pF C(T),
INFINEON

BB535E6327

Variable Capacitance Diode, Ultra High Frequency, 18.7pF C(T), Silicon, SOD-323, 2 PIN
INFINEON

BB535E6433

Variable Capacitance Diode, Ultra High Frequency, 18.7pF C(T), Silicon, SOD-323, 2 PIN
INFINEON

BB535E7904

Silicon Tuning Diode
INFINEON

BB535E7904HTSA1

Variable Capacitance Diode, Ultra High Frequency, 18.7pF C(T), 30V, Silicon, SOD-323, 2 PIN
INFINEON

BB535E7904XT

Variable Capacitance Diode, Ultra High Frequency, 18.7pF C(T), 30V, Silicon, SOD-323, 2 PIN
INFINEON

BB535E7906

Variable Capacitance Diode, 18.7pF C(T),
INFINEON

BB535E7907XT

Variable Capacitance Diode,
INFINEON

BB535E7908

Variable Capacitance Diode, 18.7pF C(T),
INFINEON

BB535_07

Silicon Tuning Diode
INFINEON

BB545

Silicon Tuning Diode (For tuning UHF and VHF TV Tuners Large capacitance ratio, low series resistance)
INFINEON

BB545-E7904

Variable Capacitance Diode, 20pF C(T),
INFINEON