BC847BRLT1 [LRC]
General Purpose Transistors(NPN Silicon); 通用晶体管（ NPN硅）
| 型号： | BC847BRLT1 |
| 厂家： | 
LESHAN RADIO COMPANY |
| 描述： | General Purpose Transistors(NPN Silicon) |
| 文件： | 总3页 (文件大小：119K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
NPN Silicon
BC847BRLT1
is LRC prefered Device
3
COLLECTOR
1
3
BASE
2
1
EMITTER
2
CASE 318–07, STYLE 6
SOT– 23 (TO–236AB)
MAXIMUM RATINGS
Rating
Symbol
V CEO
V CBO
V EBO
I C
Value
50
Unit
V
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Collector power dissipation
Junction temperature
Storage temperature
60
V
7.0
V
150
0.2
mAdc
W
P C
T j
150
°C
T stg
-55
~
+150
°C
DEVICE MARKING
BC847BRLT1 =G1F
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
Collector–Emitter Breakdown Voltage
(IC = 1 mA)
V (BR)CEO
50
—
—
V
Emitter–Base Breakdown Voltage
(IE = 50 µA)
V (BR)EBO
V (BR)CBO
I CBO
7
—
—
—
—
—
V
V
Collector–Base Breakdown Voltage
(IC = 50 µA)
60
—
—
—
Collector Cutoff Current
(VCB = 60 V)
0.1
0.1
µA
µA
Emitter cutoff current
I EBO
(VEB = 7 V)
Collector-emitter saturation voltage
(IC/ IB = 50 mA / 5m A)
DC current transfer ratio
(V CE = 6 V, I C= 1mA)
Transition frequency
V CE(sat)
h FE
—
—
0.4
V
120
––
560
––
f T
—
—
180
2.0
––
MHz
pF
(V CE = 12 V, I E= – 2mA, f =30MHz )
Output capacitance
C ob
3.5
(V CB = 12 V, I E= 0A, f =1MHz )
h FE values are classified as follows:
Q
R
S
*
hFE
120~270
180~390
270~560
M36–1/3
LESHAN RADIO COMPANY, LTD.
BC847BRLT1
Fig.1 Grounded emitter propagation characteristics
Fig.2 Grounded emitter output characteristics( )
0.50mA
50
100
VCE= 6 V
TA = 25°C
20
10
50
80
60
40
20
0
2
1
0.5
0.2
0.1
0
0.4
0.8
1.2
1.6
2.0
0
–0.2
–0.4
–0.6
–0.8
–1.0
–1.2
–1.4
–1.6
V CE , COLLECTOR TO EMITTER VOLTAGE (V)
V BE ,BASE TO EMITTER VOLTAGE(V)
Fig.3 Grounded emitter output characteristics( )
Fig.4 DC current gain vs. collector current ( )
10
500
8
6
4
2
0
200
100
50
20
10
0
4
8
12
16
20
0.2
0.5
1
2
5
10
20
50
100
200
V CE , COLLECTOR TO EMITTER VOLTAGE (V)
I C, COLLECTOR CURRENT (mA)
Fig.6 Collector-emitter saturation voltage vs.
collector current
Fig.5 DC current gain vs. collector current ( )
0.5
500
0.2
200
100
50
0.1
0.05
0.02
0.01
20
10
0.2
0.5
1
2
5
10
20
50
100
200
0.2
0.5
1
2
5
10
20
50
100
200
I C, COLLECTOR CURRENT (mA)
I C, COLLECTOR CURRENT (mA)
M36–2/3
LESHAN RADIO COMPANY, LTD.
BC847BRLT1
Fig.7 Collector-emitter saturation voltage vs.
collector current ( )
Fig.8 Collector-emitter saturation voltage vs.
collector current ( )
0.5
0.5
0.2
0.2
0.1
0.1
0.05
0.05
0.02
0.01
0.02
0.01
0.2
0.5
1
2
5
10
20
50
100
200
0.2
0.5
1
2
5
10
20
50
100
I C, COLLECTOR CURRENT (mA)
I C, COLLECTOR CURRENT (mA)
Fig.9 Gain bandwidth product vs. emitter current
Fig.10 Collector output capacitance vs.collector-base voltage
Emitter inputcapacitance vs. emitter-base voltage
20
500
10
5
200
100
50
2
1
–0.5
–1
–2
–5
–10
–20
–50
–100
0.2
0.5
1
2
5
10
20
50
I E, EMITTER CURRENT (mA)
V CB, COLLECTOR TO BASE VOLTAGE (V)
V EB, EMITTER TO BASE VOLTAGE (V)
Fig.11 Base-collector time constant vs.emitter current
200
100
50
20
10
–0.2
–0.5
–1
–2
–5
–10
I E, EMITTER CURRENT (mA)
M36–3/3
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DIODES
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