L1N60A [LRC]
N-CHANNEL MOSFET; N沟道MOSFET
| 型号： | L1N60A |
| 厂家： | 
LESHAN RADIO COMPANY |
| 描述： | N-CHANNEL MOSFET |
| 文件： | 总9页 (文件大小：654K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
LESHAN RADIO COMPANY, LTD.
N-CHANNEL MOSFET
600V - 13Ω - 0.8A
General features
L1N60A
Type
V
Pw
R
I
D
DSS
DS(on)
L1N60A
600V
<15Ω
0.3A 3W
■ 100% avalanche tested
TO-92
■ Extremely high dv/dt capability
■ Gate charge minimized
■ New high voltage benchmark
Description
Internal schematic diagram
The L1N60A is a high voltage MOSFET and is
designed to have better characteristics,such as
fast switching time,low gate charge,low on-state
restance.
Applications
)
■ Switching application
1/9
LESHAN RADIO COMPANY, LTD.
L1N60A
Electrical ratings
Table 1.
Absolute maximum ratings
Value
Symbol
Parameter
Unit
TO-92
V
Drain-Source Voltage (V = 0)
600
600
± 30
0.3
V
V
DS
GS
V
Drain-Gate Voltage (R = 20KΩ)
DGR
GS
V
Gate-Source Voltage
V
GS
I
Drain Current (continuous) at T = 25°C
A
D
D
C
I
Drain Current (continuous) at T =100°C
0.189
1.2
A
C
(1)
I
Drain Current (pulsed)
A
DM
P
Total Dissipation at T = 25°C
3
W
TOT
C
Derating Factor
0.25
800
4.5
W/°C
V
V
Gate source ESD(HBM-C=100pF, R=1.5KΩ)
Peak Diode Recovery voltage slope
ESD(G-D)
(2)
dv/dt
V/ns
T
Operating Junction Temperature
Storage Temperature
J
-55 to 150
°C
T
stg
1. Pulse width limited by safe operating area
2. ISD ≤0.3A, di/dt ≤200A/µs, VDD =80%V(BR)DSS
Table 2.
Symbol
Thermal resistance
Parameter
Value
TO-92
Unit
R
Thermal resistance junction-case Max
Thermal resistance junction-ambient Max
Thermal resistance junction-lead Max
--
°C/W
°C/W
°C/W
thj-case
R
120
40
thj-a
R
thj-lead
Maximum lead temperature for soldering
purpose
T
260
°C
l
1. When mounted on 1 inch² FR-4 board, 2 Oz Cu
Table 3.
Symbol
Avalanche data
Parameter
Value
Unit
Avalanche Curent, Repetitive or Noy-Repetitive
(pulse width limited by Tj Max)
I
0.8
60
A
AR
Single pulse avalanche Energy
E
mJ
AS
(starting Tj=25°C, Id=Iar, Vdd=50V)
2/9
LESHAN RADIO COMPANY, LTD.
L1N60A
Electrical characteristics
(T
=25°C unless otherwise specified)
CASE
Table 4.
Symbol
On/off states
Parameter
Test Condictions
Min.
Typ. Max. Unit
Drain-Source Breakdown
Voltage
V
I
= 1mA, V = 0
600
V
(BR)DSS
D
GS
V
V
= Max Rating,
1
µA
µA
Zero Gate Voltage Drain
DS
I
I
DSS
GSS
Current (V = 0)
= MaxRating @125°C
50
GS
DS
Gate Body Leakage Current
V
= ±20V
±10
µA
GS
(V = 0)
DS
V
R
V
V
= V , I = 50µA
Gate Threshold Voltage
3
3.75
13
4..5
15
V
GS(th)
DS
GS
D
Static Drain-Source On
Resistance
= 10V, I = 0.4A
Ω
DS(on)
GS
D
Table 5.
Symbol
Dynamic
Parameter
Test Condictions
Min.
Typ. Max. Unit
(1)
V
=15V, I = 0.4A
Forward Transconductance
0.5
S
g
DS
DS
D
fs
C
Input Capacitance
Output Capacitance
iss
94
17.6
2.8
pF
pF
pF
C
oss
V
=25V, f=1 MHz, V =0
GS
Reverse Transfer
Capacitance
C
rss
(2)
Equivalent Output
Capacitance
C
oss eq
.
V
=0, V =0V to 480V
11
pF
GS
DS
Q
V
V
=480V, I = 0.8A
g
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
4.9
1
6.9
nC
nC
nC
DD
D
Q
=10V
gs
GS
2.7
Q
(see Figure 11)
gd
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
inceases from 0 to 80% VDSS
3/9
LESHAN RADIO COMPANY, LTD.
L1N60A
Table 6.
Symbol
Switching times
Parameter
Test Condictions
=300 V, I = 0.4A,
Min.
Typ. Max. Unit
t
d(on)
Turn-on Delay Time
Rise Time
5.5
5
ns
ns
ns
ns
V
DD
D
t
r
R =4.7Ω, V =10V
G
GS
t
Turn-off Delay Time
Fall Time
13
28
d(off)
(see Figure 19)
t
f
Table 7.
Symbol
Source drain diode
Parameter
Test Condictions
Min
Typ. Max Unit
I
Source-drain Current
0.8
2.4
1.6
A
A
V
SD
(1)
Source-drain Current (pulsed)
Forward on Voltage
I
SDM
(2)
I
I
=0.8A, V =0
V
SD
GS
SD
t
=0.8A,
rr
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
135
216
3.2
ns
nC
A
SD
Q
di/dt = 100A/µs,
rr
V
=20V, Tj=25°C
I
DD
RRM
t
I
=0.8A,
rr
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
140
224
3.2
ns
nC
A
SD
Q
di/dt = 100A/µs,
=20V, Tj=150°C
rr
V
I
DD
RRM
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
Table 8.
Symbol
Gate-source zener diode
Parameter
Test Condictions
Min. Typ. Max. Unit
Gate-source Braekdown
Voltage
(1)
BV
Igs=±1mA (Open Drain) 30
V
GSO
4/9
LESHAN RADIO COMPANY, LTD.
L1N60A
Electrical characteristics (curves)
Figure 1. Safe operating area for TO-92
Figure 2. Thermal impedance for TO-92
Figure 3. Output characterisics
Figure 4. Transfer characteristics
5/9
LESHAN RADIO COMPANY, LTD.
L1N60A
Figure 5. Transconductance
Figure 6. Static drain-source on resistance
Figure 7. Gate charge vs gate-source voltage
Figure 8. Capacitance variations
6/9
LESHAN RADIO COMPANY, LTD.
L1N60A
Figure 9. Normalized gate threshold voltage
vs temperature
Figure 10. Normalized on resistance vs
temperature
Figure 11. Source-drain diode forward
characteristics
Figure 12. Normalized B
VDSS
vs temperature
Figure 13. Maximum avalanche energy vs
temperature
Figure 14. Max Id Current vs Tc
7/9
LESHAN RADIO COMPANY, LTD.
L1N60A
Test circuit
Figure 15. Switching times test circuit for
resistive load
Figure 16. Gate charge test circuit
Figure 17. Test circuit for inductive load
switching and diode recovery times
Figure 18. Unclamped Inductive load test
circuit
Figure 19. Unclamped inductive waveform
Figure 20. Switching time waveform
8/9
LESHAN RADIO COMPANY, LTD.
L1N60A
TO-92 MECHANICAL DATA
mm.
inch
DIM.
MIN.
4.32
0.36
4.45
3.30
2.41
1.14
12.70
2.16
0.92
0.41
TYP
MAX.
4.95
0.51
4.95
3.94
2.67
1.40
15.49
2.41
1.52
0.56
MIN.
0.170
0.014
0.175
0.130
0.094
0.044
0.50
TYP.
MAX.
0.194
0.020
0.194
0.155
0.105
0.055
0.610
0.094
0.060
0.022
A
b
D
E
e
e1
L
R
S1
W
V
0.085
0.036
0.016
5°
5°
9/9
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