L2SB772P [LRC]
PNP SURFACE MOUNT TRANSISTOR;型号: | L2SB772P |
厂家: | LESHAN RADIO COMPANY |
描述: | PNP SURFACE MOUNT TRANSISTOR |
文件: | 总2页 (文件大小:137K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
LESHAN RADIO COMPANY, LTD.
PNP SURFACE MOUNT TRANSISTOR
L2SB772Q
L2SB772P
ƽ
We declare that the material of product compliance with RoHS requirements.
4
1
2
3
DEVICE MARKING AND ORDERING INFORMATION
SOT-89
Device
Marking
Shipping
L2SB772Q
72Q
2500/Tape&Reel
2,4
2500/Tape&Reel
L2SB772P
72P
COLLECTOR
1
MAXIMUM RATINGS(Ta=25qC)
BASE
Parameter
Symbol
Limits
Unit
V
3
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
V
CBO
VCEO
VEBO
−40
−30
EMITTER
V
−6
V
Peak Pulse Current
I
CM
−3
A
Collector power dissipation
Junction temperature
Storage temperature
P
C
0.5
W
°C
°C
Tj
150
Tstg
−55 to 150
ELECTRICAL CHARACTERISTICS(Ta=25qC)
Parameter
Symbol Min.
Typ.
Max.
Unit
Conditions
BVCBO
BVCEO
BVEBO
−40
−30
−6
−
−
−
−
−
−
V
V
V
I
I
I
C
= −100
= −10mA
= −100
µ
A
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
C
−
E
µ
A
I
I
I
CBO
−
−1
µ
A
A
A
V
V
V
CB= −40V
CB= −30V
EB= −6V
CEO
EBO
−
−
−
−
−
−
−
−10
−1
µ
µ
Collector cutoff current
Emitter cutoff current
V
V
CE(sat)
BE(sat)
−
−0.5
−1.5
320
V
I
I
C
/I
B
= −2A/−0.2A
= −2A/−0.2A
Collector-emitter saturation voltage
Base-emitter saturation voltage
−
V
−
/I
C B
h
FE(1)
FE
100
V
V
V
CE= −2V, I
CE= −2V, I
CE= −5V, I
C
= −1A
DC current transfer ratio
DC current transfer ratio
Transition frequency
h
32
50
−
−
−
−
−
C
= −100mA
f
T
MHz
E
=-0.1A, f =10MHz
hFE(1) values are classified as follows :
Item(*)
Q
P
hFE
100~200
160~320
Rev.O 1/2
LESHAN RADIO COMPANY, LTD.
L2SB772Q
L2SB772P
SOT-89
Unit: mm
D1
C
SOT89-3L
Dim Min Max Typ
A
B
1.40 1.60 1.50
0.45 0.55 0.50
0.37 0.47 0.42
0.35 0.43 0.38
4.40 4.60 4.50
1.50 1.70 1.60
2.40 2.60 2.50
E
H
B1
C
L
B
D
e
B1
D1
E
e
—
—
1.50
A
H
3.95 4.25 4.10
0.90 1.20 1.05
L
All Dimensions in mm
D
1.7
2.7
0.4
1.9
1.3
0.9
3.0
Rev.O 2/2
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