LBC807-16DMT1G [LRC]
Dual General Purpose Transistors PNP Duals; 双路通用晶体管PNP偶
| 型号： | LBC807-16DMT1G |
| 厂家： | 
LESHAN RADIO COMPANY |
| 描述： | Dual General Purpose Transistors PNP Duals |
| 文件： | 总3页 (文件大小：173K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
LESHAN RADIO COMPANY, LTD.
DualGeneralPurposeTransistors
PNPDuals
LBC807-16DMT1G
LBC807-25DMT1G
LBC807-40DMT1G
We declare that the material of product compliance with RoHS requirements.
•
MAXIMUM RATINGS
Rating
Symbol
V CEO
V CBO
V EBO
I C
Value
45
Unit
V
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
50
V
5.0
V
SC-74
500
mAdc
THERMAL CHARACTERISTICS
Characteristic
6
Q1
1
5
4
Symbol
Max
Unit
Total Device Dissipation FR– 5 Board, (1)
TA = 25°C
P D
370
3.0
mW
mW/°C
°C/W
Q2
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
R θJA
P D
333
3
2
Alumina Substrate, (2) TA = 25°C
Derate above 25°C
600
4.8
mW
mW/°C
°C/W
°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
R θJA
208
T J , T stg
–55 to +150
DEVICE MARKING
LBC807–16DMT1G = 5A; LBC807–25DMT1G = 5B; LBC807–40DMT1G = 5C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = –10 mA)
V (BR)CEO
45
50
—
—
—
—
—
—
V
V
V
Collector–Emitter Breakdown Voltage
(VEB = 0, IC = –10 µA)
V (BR)CES
Emitter–Base Breakdown Voltage
(I E = –1.0 µA)
V (BR)EBO
I CBO
5.0
Collector Cutoff Current
(VCB = 20 V)
—
—
—
—
100
5.0
nA
(VCB = 20 V, TA = 150°C)
µA
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Rev.O 1/3
LESHAN RADIO COMPANY, LTD.
LBC807-16DMT1G LBC807-25DMT1G LBC807-40DMT1G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
DC Current Gain
h FE
(I C= 100 mA, V CE = 1.0 V)
LBC807–16
LBC807–25
LBC807–40
100
—
—
—
—
250
160
250
40
400
600
—
(I C = 500 mA, V CE = 1.0 V)
Collector–Emitter Saturation Voltage
(I C = 500 mA, I B = 50 mA)
V CE(sat)
—
—
—
—
0.7
V
V
Base–Emitter On Voltage
( I C = 500 mA, V CE = 1.0 V)
V BE(on)
1.2
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
f T
100
—
—
—
—
MHz
pF
( I C = 10 mA, V CE = 5.0 V dc, f = 100 MHz)
Output Capacitance
C obo
10
(V CB = 10 V, f = 1.0 MHz)
Rev.O 2/3
LESHAN RADIO COMPANY, LTD.
LBC807-16DMT1G LBC807-25DMT1G LBC807-40DMT1G
SC−74
D
MILLIMETERS
INCHES
NOM
0.039
0.002
0.015
0.007
0.118
0.059
0.037
0.016
0.108
−
DIM
A
A1
b
c
D
E
e
L
H
E
MIN
0.90
0.01
0.25
0.10
2.90
1.30
0.85
0.20
2.50
0°
NOM
1.00
0.06
0.37
0.18
3.00
1.50
0.95
0.40
2.75
−
MAX
MIN
0.035
0.001
0.010
0.004
0.114
0.051
0.034
0.008
0.099
0°
MAX
0.043
0.004
0.020
0.010
0.122
0.067
0.041
0.024
0.118
10°
6
5
2
4
1.10
0.10
0.50
0.26
3.10
1.70
1.05
0.60
3.00
10°
E
H
E
1
3
b
e
q
C
A
0.05 (0.002)
L
q
A1
2.4
0.094
0.95
0.037
1.9
0.074
0.95
0.037
0.7
0.028
1.0
0.039
mm
inches
ǒ
Ǔ
SCALE 10:1
Rev.O 3/3
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